1 Form A Solid State Relay
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1 Form A Solid State Relay VOAT, VOAABTR FEATURES 9 S S DC S' 3 S' High speed SSR - t on /t off < 8 μs Maximum R ON. Isolation test voltage 3 V RMS Load voltage V Load current A DC configuration DIP- package Clean bounce free switching TTL/CMOS compatible input Available on tape and reel Pure tin leads Compliant to RoHS Directive /9/EC and in accordance to WEEE /9/EC DESCRIPTION The VOAT are high speed SPST normally open ( form A) solid-state relay in a DIP- package. The relays are constructed as a multi-chip hybrid device. Actuation control is via an infrared LED. The output switch is a combination of a photodiode array with MOSFET switches. The relays can be configured for AC/DC or DC only operation. APPLICATIONS Instrumentation Industrial controls Security AGENCY APPROVALS UL77: file no. E7 system code H, double protection cul - UL77: file no. E7 system code H, double protection Notes IEC 77-- (VDE 88) capable, consult sales representative for details Agency approvals are valid only for ambient temperature range - C to 8 C ORDERING INFORMATION V O A x x T R DIP SMD PACKAGE SMD-, tape and reel DIP-, Tubes PART NUMBER ELECTR. VARIATION PACKAGE CONFIG. TAPE AND REEL UL, cul VOAABTR VOAT 7. mm >. mm Document Number: 8 For technical questions, contact: [email protected] Rev.., -Apr-
2 Form A Solid State Relay ABSOLUTE MAXIMUM RATINGS () (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT LED continous forward current I F ma LED reverse voltage V R V LED power dissipation at C P diss 8 mw OUTPUT DC or peak AC load voltage V L V Load current (DC only) I L A Peak load current (AC/DC) t = ms I LPK 3. A Output power dissipation at C P diss mw SSR Total power dissipation P diss 33 mw Ambient temperature range T amb - to + 8 C Storage temperature range T stg - to + C Soldering temperature () t s max. T sld C Isolation test voltage for s V ISO 3 V RMS Notes () Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATING CURVE.. I F = ma to ma Load Current (A) Fig. - Load Current (AC/DC) vs. Temperature For technical questions, contact: [email protected] Document Number: 8 Rev.., -Apr-
3 Form A Solid State Relay THERMAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum LED junction temperature at C T jmax. C Maximum output die junction temperature at C T jmax. C Thermal resistance, junction emitter to board at C EB 7 C/W Thermal resistance, junction emitter to case at C EC 8 C/W Thermal resistance, junction detector to board at C DB 7 C/W Thermal resistance, junction detector to case at C DC 3 C/W Thermal resistance, junction emitter to junction detector at C ED 3 C/W Thermal resistance, case to ambient at C CA 8 C/W Note The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's thermal characteristics of optocouplers application note. T A θ CA T C Package θ DC θ EC T JD θ DE T JE θ DB θ EB T B θ BA 999 T A ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT LED forward current, switch turn-on I L = A, V L. V, t = ms I Fon. ma LED forward current, switch turn-off V L = V, I L < μa I Foff μa LED reverse current V R = V I R μa LED forward voltage I F = ma V F.3. V OUTPUT On-resistance (AC/DC) I F = ma, I L = A R ON.8. On-resistance (DC only) I F = ma, I L = A R ON..7 Off-state leakage current I F = ma, V L = V I LEAK μa Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 8 For technical questions, contact: [email protected] Rev.., -Apr- 3
4 Form A Solid State Relay PIN CONFIGURATION AC/DC configuration DC only configuration Anode Cathode Do not use 3 Load Load Anode Cathode Do not use 3 SWITCHING CHARACTERISTICS (AC/DC CONNECTION) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time I F = ma, V L = 3 V, I L = ma t on 37 8 μs Turn-off time I F = ma, V L = 3 V, I L = ma t off 8 μs Turn-on time I F = ma, V L = V, I L = A t on μs Turn-off time I F = ma, V L = V, I L = A t off 8 μs. ms V L Input Output T ON T OFF Output 9 % % For technical questions, contact: [email protected] Document Number: 8 Rev.., -Apr-
5 Form A Solid State Relay SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification IEC 8 part /8/ Pollution degree DIN VDE 9 Tracking resistance (comparative tracking index) Insulation group IIIa CTI 7 Highest allowable overvoltage Transient overvoltage V IOTM 8 V peak Maximum working insulation voltage Recurring peak voltage V IORM 89 V peak Insulation resistance at C V IO = V R IS Insulation resistance at T S V IO = V R IS 9 Insulation resistance at C V IO = V R IS Partial discharge test voltage Method b, V pd = V IORM x.87 V pd 9 V peak Isolation test voltage s V ISO 3 V RMS Safety limiting values - Case temperature T SI C maximum values allowed in the Input current I SI ma event of a failure Output power P SO mw Minimum external air gap (clearance distance) Minimum external tracking (creepage distance) Measured from input terminals to output terminals, shortest distance through air Measured from input terminals to output terminals, shortest distance path along body Note This SSR is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. 7 7 mm mm TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) LED Forward Current (ma) 3 8 C C - C LED leakage current (na) 8 V R = V LED Forward Voltage (V) Fig. - LED Forward Voltage vs. Current Fig. 3 - LED Leakage Current vs. Temperature 3 Document Number: 8 For technical questions, contact: [email protected] Rev.., -Apr-
6 Form A Solid State Relay Leakage (na) 9 3 V Load = V LED Forward Current for Switch Turn-on (%), normalized to C 8 - I L = A 3 Fig. - Output Leakage Current vs. Temperature - 3 Temparature ( C) Fig. 7 - LED Current for Switch Turn-on vs. Temperature LED Voltage (V). I F = 3 ma. I F = ma..3 I F = ma. I F = ma I F = ma.. 3 Fig. - LED Voltage vs. Temperature ON-Resistance, Normalized to C I F = ma I L = A. Fig. 8 - On-resistance vs. Temperature Diode Breakdown Voltage (V) I L = μa Turn-off Time (μs) I F = ma, I L = A, P W =. ms 33. Fig. - Diode Breakdown Voltage vs. Temperatur 3 Fig. 9 - Turn-off Time vs. Temperature For technical questions, contact: [email protected] Document Number: 8 Rev.., -Apr-
7 Form A Solid State Relay Turn-off Time (μs) 7 3 I L = A, P W =. ms - C C 8 C Load Current (ma) I F = ma - C - C C 8 C 37 LED (ma) Fig. - Turn-off Time vs. LED Load Voltage (V) Fig. 3 - Load Current vs. Load Voltage Turn-on Time (μs) 7 7 I F = ma, I L = A, P W =. ms Switch Capacitance (pf) Fig. - Turn-on Time vs. Temperature 7 Applied Voltage (V) Fig. - Switch Capacitance vs. Applied Voltage 8 I L = A, P W =. ms Turn-on Time (μs) 8 - C C 8 C 39 LED (ma) Fig. - Turn-on Time vs. LED Document Number: 8 For technical questions, contact: [email protected] Rev.., -Apr- 7
8 Form A Solid State Relay PACKAGE DIMENSIONS in millimeters 3 pin one ID.7.3. ISO method A. 8 min.. R Option 7 min typ. 7. typ typ....8 typ..8 typ. 3 to to min. 8. min..3 max.. typ. i78_ PACKAGE MARKING VO V YWW H 8 Note Tape and reel suffix (TR) is not part of the package marking. For technical questions, contact: [email protected] Document Number: 8 8 Rev.., -Apr-
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun- Document Number: 9
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Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR Effective September 2005, new capacitor ratings will not be added to the series. All new ratings are available in the TR3 series.
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Power Resistor for Mounting onto a Heatsink Thick Film Technology
DIMENSIONS in millimeters Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES 800 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series Non inductive Easy
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
Pulse Proof Thick Film Chip Resistors
Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
Low Current SMD LED PLCC-2
Low Current SMD LED PLCC-2 VLMC31. 19225 DESCRIPTION These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the VLMC31. is the PLCC-2 (equivalent to
Standard 0603 SMD LED
TLMS, TLMO, TLMY, TLMG, TLMP, TLMB Standard 63 SMD LED DESCRIPTION 8562 The new 63 LED series have been designed in the smallest SMD package. This innovative 63 LED technology opens the way to smaller
Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
Optocoupler, Phototransistor Output, With Base Connection
IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance
Automotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View
Pulse Proof, High Power Thick Film Chip Resistors
Pulse Proof, High Power Thick Film Chip Resistors STANDARD ELTRICAL SPIFICATIONS MODEL CASE SIZE INCH CASE SIZE METRIC POWER RATING P 70 W LIMITING ELEMENT VOLTAGE U max. AC/DC -HP e3 FTURES Excellent
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
UV SMD LED PLCC-2 VLMU31 19225 DESCRIPTION The package of the VLMU31-series is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled
Standard Thick Film Chip Resistors
Standard Thick Film Chip Resistors FEATURES Stability R/R = 1 % for 00 h at 70 C 2 mm pitch packaging option for size Pure tin solder contacts on Ni barrier layer provides compatibility with lead (Pb)-free
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel 2 8 7 E FETURES urrent transfer ratio at I F = m 3 4 6 5 E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E
Standard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
Knob Potentiometer with Switch
Knob Potentiometer with Switch The is a revolutionary concept in panel mounted potentiometers. This unique design consists of a knob driving and incorporating a cermet potentiometer. Only the mounting
28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control
28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control OPERATION DESCRIPTION SiP32419 and SiP32429 are load switches that integrate multiple control features that simplify the design
IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications
IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications MECHANICAL DATA Pinning: = OUT, 2 = GND, 3 = V S 2 3 6672 APPLICATIONS Reflective sensors for hand dryers, towel or
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Dual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
Load Switch with Level-Shift
Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS2 ) (V) R DS(on) (Ω) I D (A).5 to 2 DESCRIPTION.54 at V IN = 4.5 V 3.9.77 at V IN = 2.5 V 3.2.6 at V IN =.8 V 2.8.65 at V IN =.5 V 2.2 The includes
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
