SM Series 400W TVS Diode Array

Transcription

1 General Purpose ESD Protection - SM5 through SM3 SM Series W TVS Diode Array RoHS Pb GREEN Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM series can absorb repetitive ESD strikes above the maximum level specified in the EC1-- international standard without performance degradation and safely dissipate up to A of /us induced surge current (EC- 1--5) with very low clamping voltages. SM Series Pinout and Functional Block Diagram Features 1 (AEC-Q11 qualified) ESD, EC1--, ±3kV contact, ±3kV air EFT, EC1--, 5A (5/5ns) Lightning, EC1--5, A (t P =/μs, SM5) Working voltages: 5V, 1V, 15V, V and 3V Low clamping voltage Low leakage current AEC-Q11 qualified (SOT3-3 package) 3 Applications Life Support Note: Not ntended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ndustrial Equipment Test and Medical Equipment Point-of-Sale Terminals Motor Controls Legacy Ports (RS-3, RS-5) Security and Alarm Systems RS-3 Application Example RS-3 Port Transceiver RD TD RTS CTS DSR DTR C Case GND SM15 (x) (bidirec onal implementa on) 13 Littelfuse, nc. Revised: 1/5/13 5

2 General Purpose ESD Protection - SM5 through SM3 Absolute Maximum Ratings Symbol Parameter Value Units P Pk Peak Pulse Power (t p =/μs) W T OP Operating Temperature - to 15 C T STOR Storage Temperature -55 to 15 C Notes: CAUTON: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal nformation Parameter Rating Units Storage Temperature Range -55 to 15 C Maximum Junction Temperature 15 C Maximum Lead Temperature (Soldering -s) C SM5 Electrical Characteristics (T OP =5ºC) Reverse Standoff Voltage WM 1μA 5. V Reverse Voltage Drop =1mA. V Leakage Current LEAK =5V 1. μa =/µs, Pin 1 or Pin to Pin 3 9. V PP =/µs, Pin 1 or Pin to Pin V Dynamic Resistance R DYN =1ns, /O to GND.19 Ω (/µs) 1 pp t p =/µs. A EC1-- (Contact Discharge) ±3 kv EC1-- (Air Discharge) ±3 kv Diode Capacitance 1 C /O-GND Reverse Bias=V, f=1mhz pf C /O-/O Reverse Bias=V, f=1mhz 35 pf SM1 Electrical Characteristics (T OP =5ºC) Reverse Standoff Voltage WM 1μA 1. V Reverse Voltage Drop =1mA 13.3 V Leakage Current LEAK =1V 1. μa =/µs, Pin 1 or Pin to Pin V PP =/µs, Pin 1 or Pin to Pin 3.5 V Dynamic Resistance R DYN =1ns, /O to GND.5 Ω (/µs) 1 pp t p =/µs 17. A EC1-- (Contact Discharge) ±3 kv EC1-- (Air Discharge) ±3 kv Diode Capacitance 1 C /O-GND Reverse Bias=V, f=1mhz 15 pf C /O-/O Reverse Bias=V, f=1mhz 1 pf 13 Littelfuse, nc. Revised: 1/5/13

3 General Purpose ESD Protection - SM5 through SM3 SM15 Electrical Characteristics (T OP =5ºC) Reverse Standoff Voltage WM 1μA 15. V Reverse Voltage Drop =1mA 1.7 V Leakage Current LEAK =15V 1. μa =/µs, Pin 1 or Pin to Pin 3. V PP =/µs, Pin 1 or Pin to Pin 3 3. V Dynamic Resistance R DYN =1ns, /O to GND.3 Ω (/µs) 1 pp t p =/µs 1. A EC1-- (Contact Discharge) ±3 kv EC1-- (Air Discharge) ±3 kv Diode Capacitance 1 C /O-GND Reverse Bias=V, f=1mhz 1 pf C /O-/O Reverse Bias=V, f=1mhz 75 pf SM Series SM Electrical Characteristics (T OP =5ºC) Reverse Standoff Voltage WM 1μA. V Reverse Voltage Drop =1mA.7 V Leakage Current LEAK =V 1. μa =/µs, Pin 1 or Pin to Pin 3 3. V PP =5A, t p =/µs, Pin 1 or Pin to Pin 3. V Dynamic Resistance R DYN =1ns, /O to GND.5 Ω (/µs) 1 pp t p =/µs 7. A EC1-- (Contact Discharge) ±3 kv EC1-- (Air Discharge) ±3 kv Diode Capacitance 1 C /O-GND Reverse Bias=V, f=1mhz 5 pf C /O-/O Reverse Bias=V, f=1mhz 5 pf SM3 Electrical Characteristics (T OP =5ºC) Reverse Standoff Voltage WM 1μA 3. V Reverse Voltage Drop =1mA. V Leakage Current LEAK =3V 1. μa =/µs, Pin 1 or Pin to Pin 3 5. V PP =A, t p =/µs, Pin 1 or Pin to Pin 3. V Dynamic Resistance R DYN =1ns, /O to GND.5 Ω (/µs) 1 pp t p =/µs 5. A EC1-- (Contact Discharge) ±3 kv EC1-- (Air Discharge) ±3 kv Diode Capacitance 1 C /O-GND Reverse Bias=V, f=1mhz 5 pf C /O-/O Reverse Bias=V, f=1mhz pf Note: 1 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 1ns width and ps rise time. 13 Littelfuse, nc. Revised: 1/5/13 7

4 General Purpose ESD Protection - SM5 through SM3 Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - P pk (kw) Pulse Duration - tp (µs) % of Rated Power PP Ambient Temperature - TA ( o C) Pulse Waveform SM5 Transmission Line Pulsing(TLP) Plot Percent of PP 11% 1% 9% % 7% % 5% % 3% % SM5 1% % Time (μs) 1 1 SM1 Transmission Line Pulsing(TLP) Plot SM15 Transmission Line Pulsing(TLP) Plot SM1 SM Littelfuse, nc. Revised: 1/5/13

5 Temperature TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - SM5 through SM3 SM Transmission Line Pulsing(TLP) Plot SM3 Transmission Line Pulsing(TLP) Plot SM SM SM Series Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 15 C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP Pre Heat - Temperature Max (T s(max) ) C - Time (min to max) (t s ) 1 secs Average ramp up rate (Liquidus) Temp (T L ) to peak T S(max) to T L - Ramp-up Rate 3 C/second max 3 C/second max T L T S(max) T S(min) t S Preheat t L Ramp-down Reflow - Temperature (T L ) (Liquidus) 17 C - Temperature (t L ) 15 seconds 5 time to peak temperature Time Peak Temperature (T P ) +/-5 C Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate C/second max Time 5 C to peak Temperature (T P ) minutes Max. Do not exceed C Product Characteristics Lead Plating Matte Tin Ordering nformation Part Number Package Marking Min. Order Qty. SM5-HTG SOT3-3 M5 3 SM1-HTG SOT3-3 M1 3 SM15-HTG SOT3-3 M15 3 SM-HTG SOT3-3 M 3 SM3-HTG SOT3-3 M3 3 Lead Material Lead Coplanarity Substitute Material Body Material Copper Alloy. inches (.1mm) Silicon Molded Epoxy Flammability UL 9 V- Notes : 1. All dimensions are in millimeters. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr.. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VD Littelfuse, nc. Revised: 1/5/13 9

6 General Purpose ESD Protection - SM5 through SM3 Part Marking System Part Numbering System SM xx H T G Mxx TVS Diode Arrays (SPA Diodes) Series Working Voltage Number of Channels G= Green T= Tape & Reel Package H: SOT3-3 Package Dimensions SOT3-3 C b 3 5B 1 e e1 D E1 A1 L1 E A Recommended Pad Layout P M P N Package SOT3-3 Pins 3 JEDEC TO-3 Millimeters nches Min Max Min Max A A1 M b c...3. D E N E e.95 BSC.3 BSC e1 1.9 BSC.75 BSC L1.5 REF.1 REF M.9.9 N.95.3 O.7.3TYP P.7.3TYP Embossed Carrier Tape & Reel Specification SOT3-3 ACCESS HOLE.mm 13mm 1mm mm mm TAPE AND REEL GENERAL NFORMATON 1. 3 PECES PER REEL.. ORDER N MULTPLES OF FULL REELS ONLY. 3. MEETS EA-1 REVSON "A" SPECFCATONS. SOT3-3 (mm POCKET PTCH) Symbol Millimetres nches Min Max Min Max E F P D P W P A B K t mm USER DRECTON OF FEED PN Littelfuse, nc. Revised: 1/5/13