PM25RLB120. APPLICATION General purpose inverter, servo drives and other motor controls PM25RLB120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

Size: px
Start display at page:

Download "PM25RLB120. APPLICATION General purpose inverter, servo drives and other motor controls PM25RLB120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>"

Transcription

1 PMRLB0 PMRLB0 FETURE a) dopting new th generation IGBT (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 60% for the current rating of inverter part. φ, 00 Current-sense IGBT type inverter, 00 Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P- available from upper arm devices) coustic noise-less.kw class inverter application UL Recognized Yellow Card No.E806(N) File No.E80 PPLICTION General purpose inverter, servo drives and other motor controls PCKGE LINES Dimensions in mm 0 06 ± φ. MOUNTING HOLES. 6. N P φ. B U W -φ Terminal code. UPC. UFO. UP. UP. PC 6. FO. P 8. P 9. WPC 0. WFO. WP. WP. NC. N. Br 6. UN. N 8. WN 9. May 00

2 PMRLB0 INTERNL FUNCTIONS BLOCK DIGRM Br NC WN N N UN WP WP WPC WFO P P PC FO UP UP UPC UFO.k.k.k.k Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out B N W U P MXIMUM RTINGS (Tj = C, unless otherwise noted) INERTER PRT Ratings CES ±IC ±ICP PC Tj Collector-Emitter oltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature D =, CIN = TC = C TC = C TC = C (Note-) ~ +0 W C BRKE PRT Ratings CES IC ICP PC R(DC) Tj Collector-Emitter oltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse oltage FWDi rward Current Junction Temperature D =, CIN = TC = C TC = C TC = C (Note-) TC = C TC = C ~ +0 W C CONTROL PRT Ratings D Supply oltage pplied between : UP-UPC P-PC, WP-WPC, N-NC 0 CIN FO O put oltage Fault Output Supply oltage Fault Output Current pplied between : UP-UPC, P-PC WP-WPC, UN N WN Br-NC pplied between : UFO-UPC, FO-PC, WFO-WPC FO-NC nk current at UFO, FO, WFO, FO terminals m May 00

3 PMRLB0 TL SYSTEM Ratings CC(PR) Supply oltage Protected by D =. ~ 6., verter Part, SC Tj = + C Start 800 CC(surge) Tstg iso Supply oltage (Surge) Storage Temperature Isolation oltage pplied between : P-N, Surge value 60Hz, nusoidal, Charged part to Base, C min ~ + 00 C rms THERML RESISTNCES Min. Typ. Max. Rth(j-c)Q verter IGBT (per element) (Note-) 0.8* Rth(j-c)F Junction to case Thermal verter FWDi (per element) (Note-).6* Rth(j-c)Q Resistances Brake IGBT (Note-) 0.96* Rth(j-c)F Brake FWDi (Note-).8* C/W Rth(c-f) Contact Thermal Resistance Case to fin, (per module) Thermal grease applied (Note-) 0.08 * If you use this value, Rth(f-a) should be measured just under the chips. (Note-) TC (under the chip) measurement point is below. ( : mm) arm UP P WP UN N WN Br axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi X Y Bottom view ELECTRICL CHRCTERISTICS (Tj = C, unless otherwise noted) INERTER PRT CE(sat) EC ton trr tc(on) toff tc(off) ICES Collector-Emitter Saturation oltage FWDi rward oltage Switching Time Collector-Emitter Cutoff Current D =, IC = Tj = C CIN = 0 (Fig. ) Tj = C IC =, D =, CIN = (Fig. ) D =, CIN = 0 CC = 600, IC = Tj = C ductive Load (Fig.,) CE = CES, CIN = (Fig. ) Tj = C Tj = C Min. Typ. Max µs m May 00

4 PMRLB0 BRKE PRT CE(sat) FM ICES Collector-Emitter Saturation oltage FWDi rward oltage Collector-Emitter Cutoff Current D =, IC = Tj = C CIN = 0 (Fig. ) Tj = C = CE = CES, CIN = (Fig. ) (Fig. ) Tj = C Tj = C Min. Typ. Max m CONTROL PRT ID th(on) th(off) SC toff(sc) r U Ur O(H) O(L) Circuit Current put ON Threshold oltage put OFF Threshold oltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-oltage Protection Fault Output Current N-NC D =, CIN = *P-*PC pplied between : UP-UPC, P-PC, WP-WPC UN N WN Br-NC 0 Tj C, D = (Fig.,6) verter part Brake part D = (Fig.,6) D = Detect Tj of IGBT chip 0 Tj C D =, FO = Trip level Reset level Trip level Reset level (Note-) Minimum Fault Output Pulse tfo D = (Note-).0.8 ms Width (Note-) Fault output is given only when the internal SC, & U protections schemes of either upper or lower arm device operate to protect it. Min Typ Max m µs C m MECHNICL RTINGS ND CHRCTERISTICS Mounting torque Weight Mounting part screw : M Min. Typ. Max N m g RECOMMENDED CONDITIONS FOR USE CC D CIN(ON) CIN(OFF) fpwm tdead Supply oltage Control Supply oltage put ON oltage put OFF oltage PWM put Frequency rm Shoot-through Blocking Time pplied across P-N terminals pplied between : UP-UPC, P-PC WP-WPC, N-NC (Note-) pplied between : UP-UPC, P-PC, WP-WPC UN N WN Br-NC Using pplication Circuit of Fig. 8 r IPM s each input signals (Fig. ) Recommended value ± khz µs (Note-) With ripple satisfying the following conditions: dv/dt swing ±/µs, ariation peak to peak May 00

5 PMRLB0 PRECUTIONS FOR TESTING. Before appling any control supply voltage (D), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. fter this, the specified ON and OFF level setting for each input signal should be done.. When performing SC tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,,W,B) P, (U,,W) CIN (0) IN CIN () IN U,,W, (N) D (all) Fig. CE(sat) Test U,,W,B, (N) D (all) Fig. EC, (FM) Test a) Lower rm Switching P CIN () CIN gnal input (Upper rm) gnal input (Lower rm) U,,W CS cc 90% trr Irr 90% CE b) Upper rm Switching CIN CIN () gnal input (Upper rm) gnal input (Lower rm) D (all) D (all) N P U,,W Fig. Switching time and SC test circuit N CS cc 0% 0% 0% 0% tc (on) tc (off) CIN td (on) tr td (off) tf (ton= td (on) + tr) (toff= td (off) + tf) Fig. Switching time test waveform CIN Short Circuit Current P, (U,,W,B) Constant Current CIN () IN Pulse CE SC D (all) U,,W, (N) Fig. ICES Test toff(sc) Fig. 6 SC test waveform IPM input signal CIN (Upper rm) 0.. t IPM input signal CIN (Lower rm) 0. t tdead tdead tdead.: put on threshold voltage th(on) typical value, : put off threshold voltage th(off) typical value Fig. Dead time measurement point example May 00

6 PMRLB0 P D D 0k 0µ 0.µ UP U UP UPC P P PC.k.k cc cc U + M D 0k 0µ WP W WP WPC UN.k cc cc W 0.µ N 0k 0µ N cc D 0.µ 0k 0µ N WN cc.k 0.µ NC Br cc B k.k : terface which is the same as the U-phase Fig. 8 pplication Example Circuit NES FOR STBLE ND SFE OPERTION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the cc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tplh, tphl 0.8µs, Use High CMR type. Slow switching opto-coupler: CTR > 00% Use isolated control power supplies (D). lso, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex..nf) between each input C line and ground to reject common-mode noise from C line and improve noise immunity of the system. May 00

7 PMRLB0 PERFORMNCE CURES COLLECTOR CURRENT IC () PUT CHRCTERISTICS (INERTER PRT TYPICL) Tj = C D = COLLECTOR-EMITTER OLTGE CE () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. ) CHRCTERISTICS (INERTER PRT TYPICL) D =. 0. Tj = C Tj = C COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. D) CHRCTERISTICS (INERTER PRT TYPICL). 0. IC = Tj = C Tj = C SWITCHING TIME tc(on), tc(off) (µs) SWITCHING TIME CHRCTERISTICS (TYPICL) CC = 600 D = Tj = C Tj = C ductive load tc(off) tc(on) CONTROL SUPPLY OLTGE D () COLLECTOR CURRENT IC () SWITCHING TIME ton, toff (µs) 0 SWITCHING TIME CHRCTERISTICS (TYPICL) toff 0 0 ton CC = 600 D = Tj = C Tj = C ductive load SWITCHING LOSS ESW(on), ESW(off) (mj/pulse) SWITCHING LOSS CHRCTERISTICS (TYPICL) 0 ESW(on) ESW(off) ESW(on) ESW(off) ESW(off) 0 0 ESW(on) CC = 600 D = Tj = C Tj = C ductive load COLLECTOR CURRENT IC () COLLECTOR CURRENT IC () May 00

8 PMRLB0 COLLECTOR RECOERY CURRENT IC () DIODE FORWRD CHRCTERISTICS (INERTER PRT TYPICL) D = Tj = C Tj = C 0... REERSE RECOERY TIME trr (µs) DIODE REERSE RECOERY CHRCTERISTICS (INERTER PRT TYPICL) trr Irr 0 Irr 0 CC = 600 D = Tj = C Tj = C ductive load REERSE RECOERY CURRENT lrr () EMITTER-COLLECTOR OLTGE EC () COLLECTOR RECOERY CURRENT IC () COLLECTOR CURRENT IC () 0 0 PUT CHRCTERISTICS (BRKE PRT TYPICL) Tj = C D = COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. ) CHRCTERISTICS (BRKE PRT TYPICL) D =. 0. Tj = C Tj = C COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. D) CHRCTERISTICS (BRKE PRT TYPICL).. 0. IC = Tj = C Tj = C COLLECTOR RECOERY CURRENT IC () DIODE FORWRD CHRCTERISTICS (BRKE PRT TYPICL) D = Tj = C Tj = C 0... CONTROL SUPPLY OLTGE D () EMITTER-COLLECTOR OLTGE EC () May 00

9 PMRLB0 ID (m) ID S. fc CHRCTERISTICS (TYPICL) D = Tj = C N-side P-side NORMLIZED TRNSIENT THERML IMPEDNCE Zth (j c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (INERTER PRT) 0 ngle Pulse IGBT Part; Per unit base = Rth(j c)q = 0.8 C/W FWDi Part; Per unit base = 0 Rth(j c)f =.6 C/W fc (khz) TIME (s) NORMLIZED TRNSIENT THERML IMPEDNCE Zth (j c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (BRKE PRT) 0 ngle Pulse IGBT Part; Per unit base = Rth(j c)q = 0.96 C/W FWDi Part; Per unit base = 0 Rth(j c)f =.8 C/W TIME (s) May 00

PS11035 PS11035 PS11035. MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module>

PS11035 PS11035 PS11035. MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> MITSUBISHI SEMICONDUCTO FLT-BSE TYPE TYPE INSULTED TYPE TYPE INTEGTED FUNCTIONS ND FETUES Converter bridge for 3 phase C-to-DC power conversion.

More information

APPLICATION AC100V~200V three-phase inverter drive for small power motor control.

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. MITSBISHI SEMIODTOR TYE TYE TEGRTED OWER FTIOS 4th generation (planar) IGBT inverter bridge for 3 phase D-to- power conversion. TEGRTED DRIE, ROTETIO D SYSTEM OTROL FTIOS

More information

Chapter 2. Technical Terms and Characteristics

Chapter 2. Technical Terms and Characteristics Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms

More information

FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC

FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection Very Low Thermal Resistance

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low

More information

.OPERATING SUPPLY VOLTAGE UP TO 46 V

.OPERATING SUPPLY VOLTAGE UP TO 46 V L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)

More information

5SNA 3600E170300 HiPak IGBT Module

5SNA 3600E170300 HiPak IGBT Module Data Sheet, Doc. No. 5SYA 44-6 2-24 5SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling

More information

STTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.

STTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1. STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM 5 600 K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The, /6 single-channel and /6 dual-channel optocouplers consist of a 5 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output. This

More information

Trench gate field-stop IGBT, M series 650 V, 10 A low loss. Features. Description

Trench gate field-stop IGBT, M series 650 V, 10 A low loss. Features. Description Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB D2PAK 1 3 Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution

More information

Three-phase monitoring relay CM-PFE

Three-phase monitoring relay CM-PFE Data sheet Three-phase monitoring relay CM-PFE The CM-PFE is a three-phase monitoring relay that monitors the phase parameter phase sequence and phase failure in three-phase mains. 2CDC 251 005 S0012 Characteristics

More information

4N25 Phototransistor Optocoupler General Purpose Type

4N25 Phototransistor Optocoupler General Purpose Type 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an

More information

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A IRF540 IRF540FI N - CHNNEL100V - 00.50Ω - 30 - TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V

More information

A new SOI Single Chip Inverter IC implemented into a newly designed SMD package

A new SOI Single Chip Inverter IC implemented into a newly designed SMD package A new SOI Single Chip Inverter IC implemented into a newly designed SMD package Kiyoto Watabe**, Marco Honsberg*, Hatade Kazunari** and Toru Araki** **Mitsubishi Electric Corp., Power Device Works, 1-1-1,

More information

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

Design and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers

Design and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers Design and Applications of HCPL-00 and HCPL-00 Gate Drive Optocouplers Application Note 00 Introduction The HCPL-00 (DIP-) and HCPL-00 (SO-) consist of GaAsP LED optically coupled to an integrated circuit

More information

BTW67 and BTW69 Series

BTW67 and BTW69 Series BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable

More information

SMD version of BUK118-50DL

SMD version of BUK118-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in

More information

HFA15TB60 HFA15TB60-1

HFA15TB60 HFA15TB60-1 HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor

More information

D-PAK version of BUK117-50DL

D-PAK version of BUK117-50DL D-PK version of BUK117-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source

More information

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

8ETH06 8ETH06S 8ETH06-1 8ETH06FP Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996

More information

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9

More information

IRGP4068DPbF IRGP4068D-EPbF

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature

More information

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features.

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features. CA73, CA73C Data Sheet April 1999 File Number 788. Voltage Regulators Adjustable from V to 37V at Output Currents Up to 1mA without External Pass Transistors The CA73 and CA73C are silicon monolithic integrated

More information

MUR1520 MURB1520 MURB1520-1

MUR1520 MURB1520 MURB1520-1 MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/

More information

STP16NF06L STP16NF06LFP

STP16NF06L STP16NF06LFP STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

Pd max2 With an infinitely large heat sink. 20 W Operating temperature Topr -20 to +80 C Storage temperature Tstg -55 to +150 C

Pd max2 With an infinitely large heat sink. 20 W Operating temperature Topr -20 to +80 C Storage temperature Tstg -55 to +150 C Ordering number : EN7229B LB11920 Monolithic Digital IC For OA Products Three-Phase Brushless Motor Driver http://onsemi.com Overview The LB11920 is a direct PWM drive motor driver IC for 3-phase power

More information

Programmable Single-/Dual-/Triple- Tone Gong SAE 800

Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Programmable Single-/Dual-/Triple- Tone Gong Preliminary Data SAE 800 Bipolar IC Features Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones

More information

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5

More information

Advanced Monolithic Systems

Advanced Monolithic Systems Advanced Monolithic Systems FEATURES Three Terminal Adjustable or Fixed oltages* 1.5, 1.8, 2.5, 2.85, 3.3 and 5. Output Current of 1A Operates Down to 1 Dropout Line Regulation:.2% Max. Load Regulation:.4%

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

UTC UNISONIC TECHNOLOGIES CO. LTD 1 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER

UTC UNISONIC TECHNOLOGIES CO. LTD 1 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER kω UTC ULN 7CH DARLINGTON SINK DRIVER DESCRIPTION The UTC ULN is high-voltage, high-current darlington drivers comprised of seven NPN darlingto pairs. All units feature integral clamp diodes for switching

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

KIA7805AF/API~KIA7824AF/API SEMICONDUCTOR TECHNICAL DATA THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 7V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V.

KIA7805AF/API~KIA7824AF/API SEMICONDUCTOR TECHNICAL DATA THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 7V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V. SEMICONDUCTOR TECHNICAL DATA KIA785AF/API~KIA7824AF/API BIPOLAR LINEAR INTEGRATED THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 7V, 8V, 9V, 1V, 12V, 15V, 18V, 2V, 24V. FEATURES Internal Thermal Overload

More information

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared

More information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications

More information

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, AC Input Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have

More information

Harmonics and Noise in Photovoltaic (PV) Inverter and the Mitigation Strategies

Harmonics and Noise in Photovoltaic (PV) Inverter and the Mitigation Strategies Soonwook Hong, Ph. D. Michael Zuercher Martinson Harmonics and Noise in Photovoltaic (PV) Inverter and the Mitigation Strategies 1. Introduction PV inverters use semiconductor devices to transform the

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

LM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION

LM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION LM2576 FEATURES 3.3, 5.0, 12, 15, and Adjustable Output ersions Adjustable ersion Output oltage Range, 1.23 to 37 +/- 4% AG10Maximum Over Line and Load Conditions Guaranteed 3.0A Output Current Wide Input

More information

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]

More information

NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator

NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator Description: The NTE923 and NTE923D are voltage regulators designed primarily for series regulator applications. By themselves, these devices

More information

L4970A 10A SWITCHING REGULATOR

L4970A 10A SWITCHING REGULATOR 10A SWITCHING REGULATOR 10A OUTPUT CURRENT 5.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA- TION INTERNAL CURRENT LIMITING PRECISE 5.1 ± 2% ON CHIP REFERENCE RESET

More information

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection

More information

2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs

2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs 2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs Description The SCALE drivers from CONCEPT are based on a chip set that was developed specifically for the reliable driving and safe operation

More information

LM78XX Series Voltage Regulators

LM78XX Series Voltage Regulators LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range

More information

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR

More information

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V Ordering number: 2137B Thick Film Hybrid IC STK4181V AF Power Amplifier (Split Power Supply) (45W + 45W min, THD = 0.08%) Features Pin-compatible with the STK4102II series. The STK4101V series use the

More information

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE

More information

DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08

DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08 INTEGRATED CIRCUITS DATA SHEET power amplifier with diagnostic facility Supersedes data of March 1994 File under Integrated Circuits, IC01 1996 Jan 08 FEATURES Requires very few external components High

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

ABB 1. Three-phase monitoring relay CM-PFS. Data sheet. Features. Approvals. Marks. Order data. Order data - Accessories. Application.

ABB 1. Three-phase monitoring relay CM-PFS. Data sheet. Features. Approvals. Marks. Order data. Order data - Accessories. Application. 1SR 430 824 F9300 Features Monitoring of three-phase mains for phase sequence and failure Powered by the measuring circuit 2 c/o (SPDT) contacts 1 LED for status indication Approvals R: yellow LED - relay

More information

Photolink- Fiber Optic Receiver PLR135/T1

Photolink- Fiber Optic Receiver PLR135/T1 Features High PD sensitivity optimized for red light Data : NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain

More information

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI/ LCCB applications logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,

More information

Optocoupler, Phototransistor Output, With Base Connection

Optocoupler, Phototransistor Output, With Base Connection IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance

More information

2.5 A Output Current IGBT and MOSFET Driver

2.5 A Output Current IGBT and MOSFET Driver VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for

More information

TEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram

TEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram Zero Voltage Switch with Fixed Ramp TEA04/ TEA4 Description The monolithic integrated bipolar circuit, TEA04/ TEA4 is a zero voltage switch for triac control in domestic equipments. It offers not only

More information

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) *.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95

More information

BUX48/48A BUV48A/V48AFI

BUX48/48A BUV48A/V48AFI BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE

More information

HI-3182, HI-3183, HI-3184 HI-3185, HI-3186, HI-3188

HI-3182, HI-3183, HI-3184 HI-3185, HI-3186, HI-3188 March 2008 GENERAL DESCRIPTION HI-382, HI-383, HI-384 HI-385, HI-386, HI-388 ARINC 429 Differential Line Driver PIN CONFIGURATION (Top View) The HI-382, HI-383, HI-384, HI-385, HI-386 and HI-388 bus interface

More information

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A

More information

n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V

n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs

More information

unit:mm 3049A-SIP12H 8.4 7.0

unit:mm 3049A-SIP12H 8.4 7.0 Ordering number:enn1277e Monolithic Linear IC LA4445 5.5W 2-Channel AF Power Amplifier Features Dual channels. Output : 5.5W 2 (typ.) Minimun number of external parts required. Small pop noise at the time

More information

SELF-OSCILLATING HALF-BRIDGE DRIVER

SELF-OSCILLATING HALF-BRIDGE DRIVER Data Sheet No. PD60029 revj I2155&(PbF) (NOTE: For new designs, we recommend I s new products I2153 and I21531) SELF-OSCILLATING HALF-BIDGE DIE Features Floating channel designed for bootstrap operation

More information

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features. Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

STGB10NB37LZ STGP10NB37LZ

STGB10NB37LZ STGP10NB37LZ STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4

More information

SD4840/4841/4842/4843/4844

SD4840/4841/4842/4843/4844 CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby

More information

L7800 SERIES POSITIVE VOLTAGE REGULATORS

L7800 SERIES POSITIVE VOLTAGE REGULATORS SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 1.5 A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSITION SOA PROTECTION

More information

1.5A Very L.D.O Voltage Regulator LM29150/29151/29152

1.5A Very L.D.O Voltage Regulator LM29150/29151/29152 FEATURES High Current Capability 1.5A Low Dropout Voltage 350mV Low Ground Current Accurate 1% Guaranteed Initial Tolerance Extremely Fast Transient Response Reverse-Battery and "Load Dump" Protection

More information

S101D01/S101D02 S201D01/S201D02

S101D01/S101D02 S201D01/S201D02 S1D1/S1D/S1D1/S1D S1D1/S1D S1D1/S1D 1-Pin DIP Type SSR for Low Power Control Features 1. Compact ( 1-pin dual-in-line package type). RMS ON-state current I T : 1.Arms 3. Built-in zero-cross (S1D, S1D ).

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

Mini Breakout-Board. CNC Interface for LPT Port. Installation Manual Version 4

Mini Breakout-Board. CNC Interface for LPT Port. Installation Manual Version 4 Mini CNC Interface for LPT Port Version 4 Product Brief This breakout-board is designed to connect up to four stepper or servo drives to the parallel port of a PC. This requires the use of a CNC controller

More information

1.5A L.D.O. VOLTAGE REGULATOR (Adjustable & Fixed) LM1086

1.5A L.D.O. VOLTAGE REGULATOR (Adjustable & Fixed) LM1086 FEATURES Output Current of 1.5A Fast Transient Response 0.04% Line Regulation 0.2% Load Regulation Internal Thermal and Current Limiting Adjustable or Fixed Output oltage(1.5, 1.8, 2.5, 3.3, 5.0) Surface

More information

unit : mm With heat sink (see Pd Ta characteristics)

unit : mm With heat sink (see Pd Ta characteristics) Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap

More information

IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection V OFFSET

IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection V OFFSET Features Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on

More information

1ED Compact A new high performance, cost efficient, high voltage gate driver IC family

1ED Compact A new high performance, cost efficient, high voltage gate driver IC family 1ED Compact A new high performance, cost efficient, high voltage gate driver IC family Heiko Rettinger, Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, heiko.rettinger@infineon.com

More information

AS2815. 1.5A Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response

AS2815. 1.5A Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response 1.5A Low Dropout oltage Regulator Adjustable & Fixed Output, Fast Response FEATURES Adjustable Output Down To 1.2 Fixed Output oltages 1.5, 2.5, 3.3, 5.0 Output Current of 1.5A Low Dropout oltage 1.1 Typ.

More information

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 3A load without external transistor. Due to reducing the number of external

More information

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board space. The external

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Influence of Short Circuit conditions on IGBT Short circuit current in motor drives

Influence of Short Circuit conditions on IGBT Short circuit current in motor drives Influence of Short Circuit conditions on IGBT Short circuit current in motor drives Vijay Bolloju, IGBT Applications Manager, International Rectifier, El Segundo, CA USA Jun Yang IGBT Applications Engineer,

More information

3.3 kv IGBT Modules. Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi. 1. Introduction. 2. Specifications of 3.3 kv IGBT Module

3.3 kv IGBT Modules. Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi. 1. Introduction. 2. Specifications of 3.3 kv IGBT Module 3.3 kv IGBT Modules Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi A B S T R A C T Fuji Electric has developed a 3.3 kv-1.2 ka IGBT module in response to market needs for inverters suitable for industrial

More information

100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY THERMAL SHUTDOWN STBY-GND

100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY THERMAL SHUTDOWN STBY-GND TDA7294 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 100W MU- SIC POWER) MUTING/STAND-BY FUNCTIONS NO SWITCH ON/OFF

More information

UC3842/UC3843/UC3844/UC3845

UC3842/UC3843/UC3844/UC3845 SMPS Controller www.fairchildsemi.com Features Low Start up Current Maximum Duty Clamp UVLO With Hysteresis Operating Frequency up to 500KHz Description The UC3842/UC3843/UC3844/UC3845 are fixed frequencycurrent-mode

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 32 W hi-fi audio power amplifier Features High output power (50 W music power IEC 268.3 rules) High operating supply voltage (50 V) Single or split supply operations Very low distortion Short-circuit protection

More information

DISCONTINUED PRODUCT. For Reference Only. Use A3959 for new design FULL-BRIDGE PWM MOTOR DRIVER A3952SB

DISCONTINUED PRODUCT. For Reference Only. Use A3959 for new design FULL-BRIDGE PWM MOTOR DRIVER A3952SB BRAKE REF RC PHASE ENABLE 2 3 4 5 6 7 A3952SB 6 8 9 LOAD OUT B MODE SENSE OUT A LOAD Dwg. PP-056 Note that the A3952SB (DIP) and the A3952SLB (SOIC) are electrically identical and share a common terminal

More information

TDA2040. 20W Hi-Fi AUDIO POWER AMPLIFIER

TDA2040. 20W Hi-Fi AUDIO POWER AMPLIFIER 20W Hi-Fi AUDIO POWER AMPLIFIER DESCRIPTION The TDA2040 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB amplifier. Typically it provides 22W output power

More information

IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load

IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load Data Sheet No.PD 6155 IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection

More information

VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

VNP5N07 OMNIFET: FULLY AUTOPROTECTED POWER MOSFET "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM

More information

CAUTION! THE 7I29 USES VOLTAGE AND POWER LEVELS THAT REPRESENT A HAZARD TO LIFE AND LIMB.

CAUTION! THE 7I29 USES VOLTAGE AND POWER LEVELS THAT REPRESENT A HAZARD TO LIFE AND LIMB. 7I29 MANUAL Rev 1.5 CAUTION! THE 7I29 USES VOLTAGE AND POWER LEVELS THAT REPRESENT A HAZARD TO LIFE AND LIMB. THE 7I29 IS INTENDED FOR USE BY OEMS THAT WILL INTEGRATE IT INTO A SYSTEM WITH INTERLOCKS AND

More information

IRS2004(S)PbF HALF-BRIDGE DRIVER. Features. Product Summary. Packages

IRS2004(S)PbF HALF-BRIDGE DRIVER. Features. Product Summary. Packages Features Floating channel designed for bootstrap operation Fully operational to + V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range from V to V Undervoltage lockout. V, V,

More information

IEC 1000-4-2 ESD Immunity and Transient Current Capability for the SP72X Series Protection Arrays

IEC 1000-4-2 ESD Immunity and Transient Current Capability for the SP72X Series Protection Arrays IEC 00-4-2 ESD Immunity and Transient Current Capability for the SP72X Series Protection Arrays Application Note July 1999 AN9612.2 Author: Wayne Austin The SP720, SP721, SP723, and SP724 are protection

More information

TISP9110LDM Overvoltage Protector

TISP9110LDM Overvoltage Protector *RoHS COMPLINT TISP9110LDM INTEGRTED COMPLEMENTRY BUFFERED-GTE SCRS FOR DUL POLRITY SLIC OEROLTGE PROTECTION TISP9110LDM Overvoltage Protector High Performance Protection for SLICs with +ve and -ve Battery

More information