PS11035 PS11035 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module>
|
|
- Chrystal Young
- 8 years ago
- Views:
Transcription
1 MITSUBISHI SEMICONDUCTO <pplication Specific Specific Intelligent Power Power Module> FLT-BSE TYPE TYPE INSULTED TYPE TYPE INTEGTED FUNCTIONS ND FETUES Converter bridge for 3 phase C-to-DC power conversion. 3 phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. Inverter output current capability IO (Note ): Type Name Motor ating.5 kw/ C IO (%) 7.rms IO (5%; 6sec).5rms (Note ) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the above loading cases is defined as : IOP = IO, < INTEGTED DIE, POTECTION ND SYSTEM CONTOL FUNCTIONS: P-Side IGBTs : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and under voltage (U) protection. N-Side IGBTs : Drive circuit, DC-Link current sense and amplifier circuits for overcurrent protection, control-supply under-voltage protection (U), and fault output (FO) signaling circuit. Fault Output : N-side IGBT short circuit (SC), over-current (OC), and control supply under-voltage (U). Inverter nalog Current Sense : N-Side IGBT DC-Link Current Sense. Input Interface : 5 CMOS/TTL compatible, Schmitt Trigger input, and rm-shoot-through interlock protective function. PPLICTION coustic noise-less.5kw/ C Class 3 phase inverters, motor control applications, and motors with built-in small size inverter package PCKGE OUTLINES 7± 63± (69) ±.5 (5.7) 5.7± ±.5 3±.5 8.5±.5 6.5± Terminals ssignment :. CBU+. CBU 3. CB+. CB 5. CBW+ 6. CBW 7. D 8. UP 9. P. WP. UN. N 3. WN. FO 5. amp 6. GND. P. 3. S. T 5. N 6. P 7. U W 3. N 55.5 Type name,lotno. (Fig. ) Jan.
2 MITSUBISHI SEMICONDUCTO <pplication Specific Intelligent Power Module> FLT-BSE TYPE INSULTED TYPE INTENL FUNCTIONS BLOCK DIGM D UP P WP UN N WN FO (amp) U Protection Input signal conditioning (Interlock circuit) Fo Circuit + OC/SC Protection U Protection Level shifter Drive circuit Drive circuit P S T N P U W GND N (Fig. ) MXIMUM TINGS (Tj = 5) INETE PT CC pplied between P-N 5 CC(surge) P or N P(S) or N(S) ±Ic(±Icp) (surge) Each output IGBT collector-emitter static voltage Each output IGBT collector-emitter switching voltage Each output IGBT collector current pplied between P-N, Surge-value pplied between P-U..W, U..W-N pplied between P-U..W, U..W-N = 5, ( ) means IC peak value ± (±) CONETE PT M Ea IO IFSM I t epetitive peak reverse voltage ecommended C input voltage DC output current Surge (non-repetitive) forward current I t for fusing 3φ rectifying circuit cycle at 6Hz, peak value non-repetitive alue for one cycle of surge current rms s CONTOL PT D, DB CIN FO IFO Iamp Input signal voltage Fault output supply voltage Fault output current DC-Link IGBT current signal mp output current.5 ~.5 ~ ~ Jan.
3 MITSUBISHI SEMICONDUCTO <pplication Specific Intelligent Power Module> FLT-BSE TYPE INSULTED TYPE TOTL SYSTEM Tj Tstg ISO Junction temperature Storage temperature Module case operating temperature Isolation voltage Mounting torque (Note ) (Fig. 3) 6 Hz sinusoidal C applied between all terminals and the base plate for minute. Mounting screw: M ~ +5 ~ +5 ~ ~.7 (Note ) : The indicated values are specified considering the safe operation of all the parts within the SIPM. The max. ratings for the SIPM power chips (IGBT & FWDi) is Tj < 5. rms N m CSE TEMPETUE MESUEMENT POINT (Fig. 3) THEML ESISTNCE th(jc)q th(jc)f th(jc)f Junction to case Thermal esistance Inverter IGBT (/6) Inverter FWDi (/6) Converter Di (/6) /W /W /W th(cf) Contact Thermal esistance Case to fin thermal, grease applied ( Module).7 /W ELECTICL CHCTEISTICS (Tj = 5, D = 5, DB = 5 unless otherwise noted) CE(sat) EC F IM ton tc(on) toff tc(off) trr Short circuit endurance (Output, rm, and Load Short Circuit Modes) Switching SO Collector-emitter saturation voltage FWDi forward voltage Converter diode voltage Converter diode reverse current Switching times FWDi reverse recovery time Tj = 5, Input = ON, Ic =, D = DB = 5 (Shunt voltage drop not included) Tj = 5, IC = Tj = 5, IF = = M, Tj = 5 / Bridge inductive, Input = 5 CC = 3, IC =, Tj = 5 D = 5, DB = 5 Note: ton, toff include delay time of the internal control Input = 5 (One-Shot) Tj (start) 5, 3.5 D = DB Input = 5, Tj 5 IC < OC trip level, 3.5 D = DB No destruction FO output by protection operation No destruction No protecting operation No FO output Jan.
4 MITSUBISHI SEMICONDUCTO <pplication Specific Intelligent Power Module> FLT-BSE TYPE INSULTED TYPE ELECTICL CHCTEISTICS (Tj = 5, D = 5, DB = 5 unless otherwise noted) ID IDB th(on) th(off) i fpwm tdead tint amp(%) amp(%) amp(5%) amp() OC toc SC tsc UD UDr UDB UDBr td tfo IFo(H) IFo(L) Circuit current (verage) Circuit current (verage) Input on threshold voltage Input off threshold voltage Input pull-up resistor PWM input frequency rm shoot-through blocking time Input interlock sensing Inverter DC-Link IGBT current sense voltage output signal Inverter DC-Link IGBT current sense voltage output limit Over current trip level Over current delay time Short circuit trip level Short circuit delay time Trip level Supply circuit under voltage protection Fault output pulse width Fault output current eset level Trip level eset level Delay time Tj = 5, D = 5, in = 5 Tj = 5, D = DB = 5, in = 5 pplied between input terminal-inside power supply, Tj 5 elates to corresponding inputs = ~ + (Note 3) elates to corresponding input (Fig. 6) IC = IOP(%) D = 5 IC = IOP(%) Tj = 5 (Fig. ) IC = IOP(5%) D = 5 IC = (Fig. ) Tj = 5 (Fig. 5) Tj = 5 (Fig. 5) Tj = 5 (Fig. 5) Tj = 5 (Fig. 5) = Tj = 5 (Fig. 5) Tj = 5 (Note ) Open collector output (Note ) (Note 3) : The dead-time has to be set externally by the CPU; it is not part of the SIPM internal functions. (Note ) : Fault output signaling is given only when the internal OC, SC, & U protection circuits are activated. The OC, SC and U protection (and fault output) operate for the lower arms only. The OC and SC protection Fault output is given in a pulse format while that of U protection is maintained throughout the duration of the under-voltage condition kω khz ns m ms µ ECOMMENDED OPETING CONDITIONS CC D DB D, DB CIN(ON) CIN(OFF) tdead fpwm txx ripple Input on voltage Input off voltage rm shoot-through blocking time Module case operating temperature PWM Input frequency llowable minimum input on-pulse width pplied across P-N terminals pplied between D-GND pplied between CBU+ & CBU, CB+ & CB, CBW+ & CBW pplied between UP P WP UN N WN and GND elates to corresponding inputs, Tj / khz INETE DC-LINK IGBT CUENT NLOGUE SIGNLING OUTPUT (TYPICL) 5 D = 5 Tj = 5 amp amp (%) amp () 3 amp (%) 3 ctual Load Peak Current (%), (IC = IO ) (Fig. ) Jan.
5 MITSUBISHI SEMICONDUCTO <pplication Specific Intelligent Power Module> FLT-BSE TYPE INSULTED TYPE CUENT BNOMLITY POTECTIE FUNCTIONS Ic() Short circuit trip level SC Over current trip level OC Collector current tw () (Fig. 5) Protection is achieved by monitoring and filtering the N-side DC-Bus current. The over-current protection is activated (after allowing a filtering time of ) when the line current reaches 5% of the rated load-current IO (rms). Similarly, the short circuit protection is activated (after allowing a filtering time of ) when the line current reaches twice the rated collector-current (IC). When a current trip-level is exceeded (OC or SC), all the N-side IGBTs are intercepted (turned OFF) and a fault-signal is output. fter the fault-signal output duration (.8 ms - typ.), the interception is eset at the following OFF input signal. However, since the fault may be repetitive, it is recommended to stop the system after the fault-signal is received and check the fault. The trip-level settings described above are summarized in the following figure: M-SHOOT-THOUGH INTE-LOCK POTECTIE FUNCTION P-Side Input Signal : CIN(p) ON a b N-Side Input Signal : CIN(n) ON a b P-Side IGBT Gate : GE(p) a a3 b N-Side IGBT Gate : GE(n) b3 (Fig. 6) Description: () During the ON-State of either of the upper-arm or the lower-arm IGBT, the inter-lock protection circuit blocks any erroneous ON pulses (resulting from input noise) from triggering the other arm IGBT and thus it prevents the arm-shoot-through situation. () When two ON-signals are received for both the upper and the lower arms, the signal received first will be passed to the IGBT and the second signal will be blocked. The second signal will be passed to its corresponding IGBT immediately after the first signal is OFF. Note: This protective function provides no fault signaling output. The Dead-Time has to be set using the micro-controller (CPU). Operation: a. P-side normal ON-signal P-side IGBT gate turns ON. a. N-side erroneous ON-signal N-side IGBT gate remains OFF. a3. While P-side ON-signal remains P-side IGBT gate remains ON. a. N-side normal ON-signal N-side IGBT gate turns ON. b. N-side normal ON-signal N-side IGBT gate turns ON. b. Simultaneous ON-signals P-side IGBT gate remains OFF. b3. N-side receives OFF-signal N-side IGBT gate turns OFF. b. Immediately after (b3) P-side IGBT gate turns ON. ECOMMENDED I/O INTEFCE CICUIT 5 5 CPU 5.kΩ kω.nf.nf D(5) SIPM UP,P,WP,UN,N,WN Fo (amp) GND(Logic) (Fig. 7) Jan.
PM25RLB120. APPLICATION General purpose inverter, servo drives and other motor controls PM25RLB120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
PMRLB0 PMRLB0 FETURE a) dopting new th generation IGBT (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=.9 @Tj= C b) I adopt the over-temperature conservation
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control.
MITSBISHI SEMIODTOR TYE TYE TEGRTED OWER FTIOS 4th generation (planar) IGBT inverter bridge for 3 phase D-to- power conversion. TEGRTED DRIE, ROTETIO D SYSTEM OTROL FTIOS
More informationFPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC
FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
More informationChapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
More information5SNA 3600E170300 HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 44-6 2-24 5SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More informationA new SOI Single Chip Inverter IC implemented into a newly designed SMD package
A new SOI Single Chip Inverter IC implemented into a newly designed SMD package Kiyoto Watabe**, Marco Honsberg*, Hatade Kazunari** and Toru Araki** **Mitsubishi Electric Corp., Power Device Works, 1-1-1,
More informationMT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
More information.OPERATING SUPPLY VOLTAGE UP TO 46 V
L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)
More informationSD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby
More informationTOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323
GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low
More informationI T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9
More informationDATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS. 1996 Jan 08
INTEGRATED CIRCUITS DATA SHEET power amplifier with diagnostic facility Supersedes data of March 1994 File under Integrated Circuits, IC01 1996 Jan 08 FEATURES Requires very few external components High
More informationSTTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.
STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM 5 600 K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER
More informationL4970A 10A SWITCHING REGULATOR
10A SWITCHING REGULATOR 10A OUTPUT CURRENT 5.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA- TION INTERNAL CURRENT LIMITING PRECISE 5.1 ± 2% ON CHIP REFERENCE RESET
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
More informationSELF-OSCILLATING HALF-BRIDGE DRIVER
Data Sheet No. PD60029 revj I2155&(PbF) (NOTE: For new designs, we recommend I s new products I2153 and I21531) SELF-OSCILLATING HALF-BIDGE DIE Features Floating channel designed for bootstrap operation
More informationTISP9110LDM Overvoltage Protector
*RoHS COMPLINT TISP9110LDM INTEGRTED COMPLEMENTRY BUFFERED-GTE SCRS FOR DUL POLRITY SLIC OEROLTGE PROTECTION TISP9110LDM Overvoltage Protector High Performance Protection for SLICs with +ve and -ve Battery
More informationlogic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
More informationApplication Note AN-1070
Application Note AN-1070 Class D Audio Amplifier Performance Relationship to MOSFET Parameters By Jorge Cerezo, International Rectifier Table of Contents Page Abstract... 2 Introduction... 2 Key MOSFET
More informationTLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009
May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon
More informationMBR0540T1G NRVB0540T1G MBR0540T3G NRVB0540T3G. Surface Mount Schottky Power Rectifier. SOD 123 Power Surface Mount Package
MB54T1G, NVB54T1G, MB54T3G, NVB54T3G Surface Mount Schottky Power ectifier Power Surface Mount Package The Schottky Power ectifier employs the Schottky Barrier principle with a barrier metal that produces
More informationHarmonics and Noise in Photovoltaic (PV) Inverter and the Mitigation Strategies
Soonwook Hong, Ph. D. Michael Zuercher Martinson Harmonics and Noise in Photovoltaic (PV) Inverter and the Mitigation Strategies 1. Introduction PV inverters use semiconductor devices to transform the
More informationDATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.
More informationSTGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationBTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
More informationSchottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
More informationProgrammable Single-/Dual-/Triple- Tone Gong SAE 800
Programmable Single-/Dual-/Triple- Tone Gong Preliminary Data SAE 800 Bipolar IC Features Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones
More informationS101D01/S101D02 S201D01/S201D02
S1D1/S1D/S1D1/S1D S1D1/S1D S1D1/S1D 1-Pin DIP Type SSR for Low Power Control Features 1. Compact ( 1-pin dual-in-line package type). RMS ON-state current I T : 1.Arms 3. Built-in zero-cross (S1D, S1D ).
More informationApplication Note AN- 1095
Application Note AN- 1095 Design of the Inverter Output Filter for Motor Drives with IRAMS Power Modules Cesare Bocchiola Table of Contents Page Section 1: Introduction...2 Section 2 : Output Filter Design
More informationEquivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V
Ordering number: 2137B Thick Film Hybrid IC STK4181V AF Power Amplifier (Split Power Supply) (45W + 45W min, THD = 0.08%) Features Pin-compatible with the STK4102II series. The STK4101V series use the
More information2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs
2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs Description The SCALE drivers from CONCEPT are based on a chip set that was developed specifically for the reliable driving and safe operation
More informationNTE2053 Integrated Circuit 8 Bit MPU Compatible A/D Converter
NTE2053 Integrated Circuit 8 Bit MPU Compatible A/D Converter Description: The NTE2053 is a CMOS 8 bit successive approximation Analog to Digital converter in a 20 Lead DIP type package which uses a differential
More informationHFA15TB60 HFA15TB60-1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor
More informationThyristor/Diode Modules M## 501 MCC MCD MDC
Date: 29.9.214 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 51 VRRM VDRM [V] MCC MCD MDC 12 51-12io2 51-12io2 51-12io2 14 51-14io2 51-14io2 51-14io2 16 51-16io2 51-16io2 51-16io2
More informationSilvertel. Ag5200. 1 Features. 2 Description. Power-over-Ethernet Plus Module. IEEE802.3at and IEEE802.3af compliant. Maximum 30W output power
Silvertel V1.1 November 2012 Datasheet Pb 1 Features IEEE802.3at and IEEE802.3af compliant Maximum 30W output power Dual In-Line (DIL) package size 50.6mm (L) x 30mm (W) Overload, short-circuit and thermal
More informationDual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
More information1ED Compact A new high performance, cost efficient, high voltage gate driver IC family
1ED Compact A new high performance, cost efficient, high voltage gate driver IC family Heiko Rettinger, Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, heiko.rettinger@infineon.com
More informationNTE923 & NTE923D Integrated Circuit Precision Voltage Regulator
NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator Description: The NTE923 and NTE923D are voltage regulators designed primarily for series regulator applications. By themselves, these devices
More informationIRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
More informationKA7500C. SMPS Controller. Features. Description. Internal Block Diagram. www.fairchildsemi.com
SMPS Controller www.fairchildsemi.com Features Internal Regulator Provides a Stable 5V Reference Supply Trimmed to ±1% Accuracy. Uncommitted Output TR for 200mA Sink or Source Current Output Control for
More informationEliminate Ripple Current Error from Motor Current Measurement
Eliminate ipple Current Error from Motor Current Measurement Eric Persson, Toshio Takahashi Advanced Development Group International ectifier Corp. U..A. INTODUCTION Most motor drives today use measured
More informationDesign and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers
Design and Applications of HCPL-00 and HCPL-00 Gate Drive Optocouplers Application Note 00 Introduction The HCPL-00 (DIP-) and HCPL-00 (SO-) consist of GaAsP LED optically coupled to an integrated circuit
More informationPOWER SUPPLY PWM SUPERVISOR
偉 詮 電 子 股 份 有 限 公 司 WT7522 POWE SUPPLY PWM SUPEVISO Data Sheet Version 1.10 April 29, 2009 The information in this document is subject to change without notice. All ights eserved. 新 竹 市 科 學 工 業 園 區 工 業
More informationTransformerless UPS systems and the 9900 By: John Steele, EIT Engineering Manager
Transformerless UPS systems and the 9900 By: John Steele, EIT Engineering Manager Introduction There is a growing trend in the UPS industry to create a highly efficient, more lightweight and smaller UPS
More informationTDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
More informationSTPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features
Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5
More informationStandard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
More informationFeatures Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units
Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationTRAMS TROLLEY-BUSES SUBWAY
9 FT-100-600 Traction Inverter for Asynchronous Drives 11 FT-105-600 Traction Inverter for Asynchronous Drives 13 FT-170-600 Traction Inverter for Asynchronous Drives 15 FT-300-600 Traction Inverter for
More informationunit : mm With heat sink (see Pd Ta characteristics)
Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap
More informationCAUTION! THE 7I29 USES VOLTAGE AND POWER LEVELS THAT REPRESENT A HAZARD TO LIFE AND LIMB.
7I29 MANUAL Rev 1.5 CAUTION! THE 7I29 USES VOLTAGE AND POWER LEVELS THAT REPRESENT A HAZARD TO LIFE AND LIMB. THE 7I29 IS INTENDED FOR USE BY OEMS THAT WILL INTEGRATE IT INTO A SYSTEM WITH INTERLOCKS AND
More informationLM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION
LM2576 FEATURES 3.3, 5.0, 12, 15, and Adjustable Output ersions Adjustable ersion Output oltage Range, 1.23 to 37 +/- 4% AG10Maximum Over Line and Load Conditions Guaranteed 3.0A Output Current Wide Input
More informationDATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET 24 W BTL or 2 x 12 W stereo car radio File under Integrated Circuits, IC01 January 1992 GENERAL DESCRIPTION The is a class-b integrated output amplifier encapsulated in a
More information5STP 21H4200 Old part no. TV 989-2100-42
Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3
More informationTISP4600F3, TISP4700F3 OBSOLETE
*RoHS COMPLIANT TISP4600F3, TISP4700F3 HIGH OLTAGE BIDIRECTIONAL THYRISTOR OEROLTAGE PROTECTORS TISP4600F3, TISP4700F3 Ion-Implanted Breakdown Region Precise and Stable oltage Low oltage Overshoot under
More informationunit:mm 3049A-SIP12H 8.4 7.0
Ordering number:enn1277e Monolithic Linear IC LA4445 5.5W 2-Channel AF Power Amplifier Features Dual channels. Output : 5.5W 2 (typ.) Minimun number of external parts required. Small pop noise at the time
More informationIRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
More informationSCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
More informationSupply voltage Supervisor TL77xx Series. Author: Eilhard Haseloff
Supply voltage Supervisor TL77xx Series Author: Eilhard Haseloff Literature Number: SLVAE04 March 1997 i IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to
More information28V, 2A Buck Constant Current Switching Regulator for White LED
28V, 2A Buck Constant Current Switching Regulator for White LED FP7102 General Description The FP7102 is a PWM control buck converter designed to provide a simple, high efficiency solution for driving
More informationSchematic Mechanical Drawing Derating Curve. Input. Output. Product Catalogue
Input 1 Product Catalogue Single Phase SSR (24VAC) 1 ~ 4 Amps : DC Control, : Triac output 42.5 Series : 1 J/K 3 Input (+) & 4 Input (-) 1 & 2 35.6 25.5 57.75 28. 45. A = 3.2 C/W B = 1. C/W C & D =.5 C/W
More informationUNINTERRUPTIBLE POWER SUPPLIES >9900AUPS UNINTERRUPTIBLE POWER SUPPLIES
UNINTERRUPTIBLE POWER SUPPLIES 9900A >9900AUPS UNINTERRUPTIBLE POWER SUPPLIES 9900A The 9900A UPS system uses the most advanced IGBT in both the converter and inverter with Digital Signal Processor (DSP)
More informationBTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
More informationKIA7805AF/API~KIA7824AF/API SEMICONDUCTOR TECHNICAL DATA THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 7V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V.
SEMICONDUCTOR TECHNICAL DATA KIA785AF/API~KIA7824AF/API BIPOLAR LINEAR INTEGRATED THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 7V, 8V, 9V, 1V, 12V, 15V, 18V, 2V, 24V. FEATURES Internal Thermal Overload
More informationImprovements of Reliability of Micro Hydro Power Plants in Sri Lanka
Improvements of Reliability of Micro Hydro Power Plants in Sri Lanka S S B Udugampala, V Vijayarajah, N T L W Vithanawasam, W M S C Weerasinghe, Supervised by: Eng J Karunanayake, Dr. K T M U Hemapala
More informationSTPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A
More information0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)
*.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95
More informationAC/DC Power Supply Reference Design. Advanced SMPS Applications using the dspic DSC SMPS Family
AC/DC Power Supply Reference Design Advanced SMPS Applications using the dspic DSC SMPS Family dspic30f SMPS Family Excellent for Digital Power Conversion Internal hi-res PWM Internal high speed ADC Internal
More information7-41 POWER FACTOR CORRECTION
POWER FTOR CORRECTION INTRODUCTION Modern electronic equipment can create noise that will cause problems with other equipment on the same supply system. To reduce system disturbances it is therefore essential
More informationUNISONIC TECHNOLOGIES CO., LTD
UPS61 UNISONIC TECHNOLOGIES CO., LTD HIGH PERFORMANCE CURRENT MODE POWER SWITCH DESCRIPTION The UTC UPS61 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving
More informationStandard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single
More informationFeatures. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More information19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics
Bulletin PD-0840 rev. B 04/06 9TQ05PbF SCHOTTKY ECTIFIE 9 Amp I F(A) = 9Amp = 5 Major atings and Characteristics Characteristics alues Units I F(A) ectangular 9 A waveform M 5 I FSM @ tp = 5 μs sine 700
More informationFundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder
Robert W. Erickson University of Colorado, Boulder 1 1.1. Introduction to power processing 1.2. Some applications of power electronics 1.3. Elements of power electronics Summary of the course 2 1.1 Introduction
More informationStandard Recovery Diodes (Hockey PUK), 2100 A
Standard Recovery Diodes (Hockey PUK), 2 A VS-SD10C..K Series DO-200AC (K-PUK) PRODUCT SUMMARY I F(AV) 2 A Package DO-200AC (K-PUK) Circuit configuration Single diode FEATURES Wide current range High voltage
More information100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY THERMAL SHUTDOWN STBY-GND
TDA7294 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 100W MU- SIC POWER) MUTING/STAND-BY FUNCTIONS NO SWITCH ON/OFF
More informationThree-phase monitoring relay CM-PFE
Data sheet Three-phase monitoring relay CM-PFE The CM-PFE is a three-phase monitoring relay that monitors the phase parameter phase sequence and phase failure in three-phase mains. 2CDC 251 005 S0012 Characteristics
More informationA I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw
IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR
More information5STP 06T1600 Old part no. T 906C-640-16
Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM
More informationIGBT Protection in AC or BLDC Motor Drives by Toshio Takahashi
International Rectifier 233 Kansas Street, El Segundo, CA 90245 USA IGBT Protection in AC or BLDC Motor Drives by Toshio Takahashi The new IR2137 IGBT Gate Driver IC integrates Ground Fault and Over-Current
More informationHigh Efficiency Thyristor
LE2HB High Efficiency hyristor 2 M.4 Single hyristor Part number LE2HB Backside: anode 2 Features / dvantages: pplications: Package: O-247 hyristor for line frequency Planar passivated chip Long-term stability
More informationN-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
More informationItem Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 600 V
TS985C6R Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM
More informationThe D.C Power Supply
The D.C Power Supply Voltage Step Down Electrical Isolation Converts Bipolar signal to Unipolar Half or Full wave Smoothes the voltage variation Still has some ripples Reduce ripples Stabilize the output
More informationIRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationDiscontinued Product For Reference Only
Data Sheet 29319.12A 2962 DUAL PULSE-WIDTH MODULATED CURRENT CONTROL GROUND IN A SENSE A SINK A SOURCE A THS A V CC SOURCE B SINKB SENSEB IN B THS B 1 2 3 4 5 6 7 8 9 1 11 12 LOGIC LOGIC Dwg. No. D-11
More informationSmart Highside Power Switch
PROFET Data sheet BTS 6143 D Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection with latch Current limitation Overload protection
More informationApplication Information Improving Efficiency in Smart Grid Applications With Fully Integrated Current Sensing ICs
Application Information Improving Efficiency in Smart Grid Applications With Fully Integrated Current Sensing ICs By Shaun Milano, and Andreas P. Friedrich Allegro MicroSystems Europe Focus on the Photovoltaic
More informationUTC UNISONIC TECHNOLOGIES CO. LTD 1 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER
kω UTC ULN 7CH DARLINGTON SINK DRIVER DESCRIPTION The UTC ULN is high-voltage, high-current darlington drivers comprised of seven NPN darlingto pairs. All units feature integral clamp diodes for switching
More informationRelationship between large subject matter areas
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER;
More information1. Learn about the 555 timer integrated circuit and applications 2. Apply the 555 timer to build an infrared (IR) transmitter and receiver
Electronics Exercise 2: The 555 Timer and its Applications Mechatronics Instructional Laboratory Woodruff School of Mechanical Engineering Georgia Institute of Technology Lab Director: I. Charles Ume,
More informationBasic DC Motor Circuits
Basic DC Motor Circuits Living with the Lab Gerald Recktenwald Portland State University gerry@pdx.edu DC Motor Learning Objectives Explain the role of a snubber diode Describe how PWM controls DC motor
More informationOBJECTIVE QUESTIONS IN ANALOG ELECTRONICS
1. The early effect in a bipolar junction transistor is caused by (a) fast turn-on (c) large collector-base reverse bias (b)fast turn-off (d) large emitter-base forward bias 2. MOSFET can be used as a
More informationMUR1520 MURB1520 MURB1520-1
MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
More informationCA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features.
CA73, CA73C Data Sheet April 1999 File Number 788. Voltage Regulators Adjustable from V to 37V at Output Currents Up to 1mA without External Pass Transistors The CA73 and CA73C are silicon monolithic integrated
More informationSilvertel. Ag9800M. 1. Features. 2. Description. Miniature PoE Module. Small SMT package. IEEE802.3af compliant. Low cost
Silvertel V1.2 December 2014 Datasheet Ag9800M Miniature PoE Module Pb 1. Features Small SMT package IEEE802.3af compliant Low cost Input voltage range 36V to 57V Minimal external components required Short-circuit
More information3000W Single Output Power Supply
SPECIFICATION MODEL OUTPUT INPUT POTECTION DC OLTAGE ATED CUENT CUENT ANGE ATED POWE OLTAGE ADJ. ANGE LINE EGULATION LOAD EGULATION SETUP, ISE TIME HOLD UP TIME (Typ.) OLTAGE ANGE FEQUENCY ANGE EFFICIENCY
More information