< IGBT MODULES > CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

Transcription

1 Dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren I C A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals RoHS Direcive complian Recognized under UL557, File E Dimension in mm TERMINAL SECTION A INTERNAL CONNECTION Tr2 Di Di2 Tr NTC Th = Terminal code TH 2 TH2 5 G 6 Es 22 Cs 23 C2E 24 C2E 38 G2 39 Es2 E2 C Tolerance oherwise specified Division of Dimension Tolerance.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 2 ±.8 over 2 o 4 ±.2 The olerance of size beween erminals is assumed o be ±.4.

2 MAXIMUM RATINGS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 2 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =9 C Collecor curren Pulse, Repeiive I CRM P o Toal power dissipaion T C =25 C I E I ERM (Noe) (Noe) Emier curren DC (Noe2) (Noe2, 4) Pulse, Repeiive (Noe2, 4) (Noe3) (Noe3) 3 6 A 227 W MODULE Symbol Iem Condiions Raing Uni isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC min 25 T jmax Maximum juncion emperaure Insananeous even (overload) 75 T Cmax Maximum case emperaure (Noe4) T jop Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ +5 T sg Sorage emperaure - -4 ~ +25 ELECTRICAL CHARACTERISTICS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - -. ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied μa GE(h) Gae-emier hreshold volage I C =3 ma, CE = CEsa (Terminal) CEsa (Chip) Collecor-emier sauraion volage I C =3 A, GE =5, T j =25 C Refer o he figure of es circui T j =25 C (Noe5) T j =5 C I C =3 A, T j =25 C GE =5, T j =25 C (Noe5) T j =5 C C ies Inpu capaciance C oes Oupu capaciance CE =, G-E shor-circuied C res Reverse ransfer capaciance Q G Gae charge CC =6, I C =3 A, GE =5-7 - nc d(on) Turn-on delay ime CC =6, I C =3 A, GE =±5, Rise ime r d(off) Turn-off delay ime R G = Ω, Inducive load Fall ime f EC (Noe) (Terminal) EC (Noe) (Chip) rr (Noe) Emier-collecor volage I E =3 A, G-E shor-circuied, T j =25 C Refer o he figure of es circui T j =25 C (Noe5) T j =5 C I E =3 A, T j =25 C G-E shor-circuied, T j =25 C (Noe5) T j =5 C Reverse recovery ime CC =6, I E =3 A, GE =±5, ns Q rr (Noe) Reverse recovery charge R G = Ω, Inducive load μc E on Turn-on swiching energy per pulse CC =6, I C =I E =3 A, E off Turn-off swiching energy per pulse GE =±5, R G = Ω, T j =5 C, E rr (Noe) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, mω (Noe4) T C =25 C r g Inernal gae resisance Per swich Ω A C C Uni nf ns mj 2

3 ELECTRICAL CHARACTERISTICS (con.; T j =25 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions R 25 Zero-power resisance T C =25 C (Noe4) R/R Deviaion of resisance R =493 Ω, T C = C B (25/5) B-consan Approximae by equaion P 25 Power dissipaion T C =25 C (Noe4) (Noe4) (Noe6) Limis Min. Typ. Max. Uni kω % K - - mw THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions R h(j-c)q R h(j-c)d R h(c-s) Thermal resisance Conac hermal resisance MECHANICAL CHARACTERISTICS Juncion o case, per Inverer IGBT Juncion o case, per Inverer DIODE Case o hea sink, per module, Thermal grease applied Symbol Iem Condiions (Noe4) (Noe4) Limis Min. Typ. Max Uni K/kW (Noe4, 7) K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 6 screw N m M s Mouning orque Mouning o hea sink M 5 screw N m m mass g d s d a Creepage disance Clearance e c Flaness of base plae On he cenerline X, Y Terminal o erminal Terminal o base plae Terminal o erminal - - Terminal o base plae (Noe8) Uni mm mm ± - + μm Noe. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE) 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C ) and hea sink emperaure (T s ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. R 6. B ln( 25 ( 25 / 5) ) /( ), R5 T25 T5 R 25 : resisance a absolue emperaure T 25 [K]; T 25 =25 [ C]+273.5=298.5 [K] R 5 : resisance a absolue emperaure T 5 [K]; T 5 =5 [ C]+273.5=323.5 [K] 7. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 8. The base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +:Convex -:Concave X Y mouning side mouning side -:Concave mouning side +:Convex 9. Use he following screws when mouning he prined circui board (PCB) on he sand offs. "φ2.6 or φ2.6 2 B apping screw" The lengh of he screw depends on hickness (.6~2.) of he PCB. 3

4 RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. Uni CC (DC) Supply volage Applied across C-E2 erminals GEon Gae (-emier drive) volage Applied across G-Es/G2-Es2 erminals R G Exernal gae resisance Per swich - 4 Ω CHIP LOCATION (Top view) Dimension in mm, olerance: ± mm Tr/Tr2: IGBT, Di/Di2: DIODE, Th: NTC hermisor 4

5 TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % - GE ,24 Load + CC i C ~ 9 % i E A I E Q rr =.5 I rr rr rr + GE - GE R G vge vce i C A d(on) r d(off) f % I rr.5 I rr Swiching characerisics es circui and waveforms rr, Q rr characerisics es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A. I CM. CC. CC.2 I CM i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT i GE= I C Shorcircuied 22 5 Shorcircuied 22 5 I E Shorcircuied 22 5 Shorcircuied ,24 GE= ,24 I C Shorcircuied ,24 Shorcircuied ,24 I E Tr Tr2 Di Di2 CEsa characerisics es circui EC characerisics es circui 5

6 PERFORMANCE CURES INERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS 6 T j=25 C (Chip) GE=5 (Chip) 3.5 GE = T j =5 C COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION OLTAGE CEsa () T j =25 C T j =25 C COLLECTOR-EMITTER OLTAGE CE () COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T j =25 C (Chip) G-E shor-circuied (Chip) 9 8 I C =6 A COLLECTOR-EMITTER SATURATION OLTAGE CEsa () I C =3 A I C =2 A EMITTER CURRENT IE (A) T j =5 C T j =25 C T j =25 C GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () 6

7 PERFORMANCE CURES INERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C d(off) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, I C =3 A, GE =±5, INDUCTIE LOAD : T j =5 C, : T j =25 C d(on) f d(off) d(on) r SWITCHING TIME (ns) SWITCHING TIME (ns) f r COLLECTOR CURRENT I C (A). EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, I C /I E =3 A, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C E on E on SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E off E rr SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A). EXTERNAL GATE RESISTANCE R G (Ω) 7

8 PERFORMANCE CURES INERTER PART CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j =25 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C C ies rr CAPACITANCE (nf) C oes rr (ns), I rr (A) I rr C res.. COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC =6, I C =3 A, T j =25 C Single pulse, T C =25 C R h(j-c)q =66 K/kW, R h(j-c)d =2 K/kW 2 GATE-EMITTER OLTAGE GE () NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j-c) GATE CHARGE Q G (nc) TIME (S) 8

9 PERFORMANCE CURES NTC hermisor par TEMPERATURE CHARACTERISTICS RESISTANCE R (kω) TEMPERATURE T ( C) 9

10 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conainedherein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. 23 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED.