T.M.M. TEKNIKER MICROMACHINING

Transcription

1 T.M.M. TEKNIKER MICROMACHINING Micro and Nanotechnology Dapartment FUNDACION TEKNIKER Avda. Otaola. 20 Tel Fax Eibar

2 TMM FACILITIES -Clean Room (Class 100): -UV-Lithography (spin coater, mask aligner, wet-etching) etching) -- Nanolithography (Soft Lithography, Nanoimprint Lithography ) -- Thin films deposition (sputtering, e-e beam) -- Deep Reactive Ion Etching (Bosch process) -- Electroplating (Micromoulds( made by UVLIGA and DEEMO) -- Microreplication on polymers using Hot-Embossing

3 TMM FACILITIES -Micromachining: - Femtosecond Laser Ablation - 3 axis micromachining equipment -Diamond turning machine -Wire EDM -Sinking EDM -Characterisation: -SEM -AFM -Optical Profiler

4 UV Photolithography Microstructures above photoresist previously coated on different sizes as larges as 1500 millimetres 1. Photoresist coating Spin coating B.L.E. Delta 20 W8 dip-coating spray coating 2. UV Exposure Mask Aligner EVG EV620 Radiation NUV (350nm - 450nm) Linear resolution: : 0.6µm Lines of 20 micrometers in width with small holes of 3 micrometers in diameter 3. Developing -Spraying -Dipping

5 Wet-Etching Wet-etching etching on silicon, chromium or glass using isotropic wet- etching or anisotropic wet-etching etching Isotropic etching Anisotropic etching Chrome lines on glass. Lines width is 10 micrometers. Chromium thickness is 120 nanometers. Pozo de 100µm m de lado y 60µm m de profundidad realizado mediante ataque húmedo de silicio cristalino (100) en KOH

6 DEEP REACTIVE ION ETCHING Gaseous etchant Inductively Coupled Plasma High plasma density (>10 11 cm - 3 ) Low pressure (10-100mTorr) 100mTorr) General aspects Very high anisotropy High etching rates (>1µm/ m/min) Altos aspect-ratio (>50) Bosch process Time multiplexed etching is used. An etching cycle flowing only SF 6 and then swithching to a sidewall passivating etching cycle using only C 4 F 8. this gas forms a teflon like film. High selectivity photoresist-silicon silicon >75:1 Depth profiles to 1 millimetre up. Canales de 125µm m de altura y 12.5 µm m de anchura realizados mediante el proceso Bosch

7 Thin films Coatings of different metals and oxides using PVD techniques 1 - Sputtering Argon ions are attracted to the target and by momentum transference ions are released from the target to the substract DC or RF 2 - Electron beam evapotation Electron beam generates electrons, which are deflected in a magnetic field. The small spheres of material are evaporated and condensed on the substarct Lift-off photolithography. The metal deposition is made after making the exposure and developing Lines of 10 micrometers of TiAlN are coated on stainless steel coated with TiN

8 Electroplat plating Thick films growth (up to 2 millimetres thickness) using Ni or NiFe to manufacture end pieces in Ni or to make micromoulds for using in hot-embossing system. Characterisctics -Low intensity current to avoid stains in the coating -The anode is made of the material to be coated using a appropiate salt so as to avoid its erosion -Ph measurements to keep the growth rate high and avoid bubbles on the substract 100µm Electroplating made on silicon. Thickness 70 micrometers.

9 Micromoulds for micro/nano replication We use two different tecniques to make micromoulds. 1 - UV-LIGA (UV-Lithography with SU-8, Electroplating) SU8 Fotolitografía Electrodeposición Ni Si 2 - DEEMO (UV-Lithography Lithography, Deep Dry-Etching Etching, Electroplating) Ni moulds made using UV-LIGA Fotorresina convencional Si Fotolitografía Ataque Seco Electrodeposición Ni

10 Micro/Nanoreplication Replication on polymers using: 1 - Microinyection 2 - Hot-Embossing Master (FIB) Other technique of replication : Soft-Lithography PDMS original PDMS PDMS réplica PU PDMS replica Replication limit PDMS: 500 nm

11 Hot-embossing Steps: Molde Polímero T>T g T>T g T<T g T<T g Nanoimprint Lithography NIL: Utilización de la técnica de hot-embossing para la estructuración de un polímero sobre un substrato Molde Resina Substrato

12 Laser Ablation Femtosecond laser (titanium:saphire): Pulse energy: 1mJ: λ=800nm 0.4mJ: λ=400nm Pulse lenth: : 90fs Repetition: : 1KHz Material etch without heat affected zone (HAZ) Líneas de cromo de 1.5µm m de grosor Sobre sustrato de vidrio Canales realizados en Kapton

13 Dimensional Characterization Scanning Electron Microscope Confocal microscopy Resolution XY: 0.2µm Resolution Z: <10nm Difractive lens on polycarbonate Edge between silicon and photoresist