MTM78E2B0LBF Gate Resistor installed Dual N-Channel MOS Type

Transcription

1 Established : Revised : 23-- Doc No. TT4-EA-248 MTM78E2BLBF Gate Resistor installed Dual N-Channel MOS Type For lithium-ion secondary battery protection circuit MTM78E2BLBF Unit: mm Features Low drain-source On-state Resistance RDS(on) typ. = 2. m (VGS =4. V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL:Level compliant) Marking Symbol: A Packaging Embossed type (Thermo-compression sealing) :. Source. Drain 2. Gate. Drain 3. Source 2 7. Drain 4. Gate 2 8. Drain 3 pcs / reel (standard) Panasonic WSMini8-F-B JEITA SC-3E Code. Absolute Maximum Ratings Ta = 2 C Parameter Symbol Rating Unit Drain-source Voltage VDS 2 V FET Gate-source Voltage VGS 2 V FET2 Drain current ID 4. A Peak drain current * IDp 4 A Total power dissipation PD *2 7 PD2 *3 mw Overall Channel temperature Tch C Operating ambient temperature Topr -4 to +8 C Storage temperature Tstg - to + C Note) * t =, Duty Cycle < % Ceramic substrate (7 7 t. mm) *2 Dual operating *3 Stand-alone (without the substrate) Internal Connection 8 (S) 7 Rg = kω 2 (G) 3 (S2) Pin Name R g = kω 4 (G2). Source. Drain 2. Gate. Drain 3. Source 2 7. Drain 4. Gate 2 8. Drain of

2 Established : Revised : 23-- Doc No. TT4-EA-248 MTM78E2BLBF Electrical Characteristics Ta = 2 C 3 C Parameter Symbol Conditions Min Drain-source surrender voltage VDSS ID =. ma, VGS = 2 V Drain-source cutoff current IDSS VDS = 2 V, VGS =. μa Gate-source cutoff current IGSS VGS = 2 V, VDS = μa Gate threshold voltage Vth ID =. ma, VDS = V V RDS(ON) ID = 2. A, VGS = 4. V m Drain-source ON resistance RDS(ON)2 ID =. A, VGS = 3. V m RDS(ON)3 ID =. A, VGS = 2. V m Forward transfer admittance Yfs ID =. A, VDS = V. S Short-circuit input capacitance (Common source) Ciss pf Short-circuit output capacitance (Common source) Coss VDS = V, VGS =, f = MHz 7 pf Reverse transfer capacitance (Common source) Crss 7 pf *, *2 Turn-on delay time td(on).2 *, *2 Rise time tr VDD = V, VGS = 4 V,. Turn-off delay time *, *2 td(off) ID =. A, RL = 2. Fall time *, *2 tf. Note). Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 73 Measuring methods for transistors. 2. * t =, Duty Cycle < % *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Typ Max Unit 2 of

3 Established : Revised : 23-- Doc No. TT4-EA-248 MTM78E2BLBF *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time ID 4 V V PW = D.C. % D RL G RG Pulse Generator VDD S 9 % VGS VGS % 9 % VDD % VDS td(on) tr td(off) tf 3 of

4 Established : Revised : 23-- Doc No. TT4-EA-248 MTM78E2BLBF ID - VDS Technical Data ( reference ) ID - VGS Drain Current ID (A) VGS = 4. V 3. V 2. V 2. V. V Drain current ID (A) Ta = Drain-source Voltage VDS (V).. 2 Gate-source voltage VGS (V) Drain-source Voltage VDS (V) VDS - VGS 2. A ID = 4. A. A Gate-source Voltage VGS (V) Drain-source On-state Resistance RDS(on) (m ) RDS(on) - ID. Drain Current ID (A) 2. V 3. V VGS = 4. V Dynamic Input/Output Characteristics Gate-source Voltage VGS (V) 4 3 VDD = V Total Gate Charge Qg (nc) 4 of

5 Established : Revised : 23-- Doc No. TT4-EA-248 Gate-source Threshold Voltage Vth (V).. Vth - Ta Technical Data ( reference ) Drain-source On-resistance RDS(on) (m ) RDS(on) - Ta 3. V MTM78E2BLBF VGS = 2. V 4. V - Temperature ( ) - Temperature ( ) Total Power Dissipation PD (W) Non-heat sink PD - Ta Ceramic substrate (7 7 t. mm), Dual operating Temperature Ta ( C) Thermal resistance Rth ( C/W) Rth - tsw.. Pulse Width tsw (s) Drain Current ID (A) IDp = 4 A Operation in this area is limited by RDS(on) Safe Operating Area ms Ta = 2 C, Glass epoxy board ms. ( t.8 mm) coated with copper foil, s which has more than DC. 3 mm 2... Drain-source Voltage VDS (V) ms of

6 Established : Revised : 23-- Doc No. TT4-EA-248 MTM78E2BLBF WSMini8-F-B Unit : mm 2.± ±. 2.± (7 ). (7 ) to. (.2).7±. (.) Land Pattern (Reference) (Unit : mm) of

7 222 Request for your special attention and precautions in using the technical information and semiconductors described in this book () If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. () When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. () Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.