FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Transcription

1 FOD84 Series, Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer ratio in selected groups: FOD84: 2 3% : 5 6% FOD84A: 5 5% A: 8 6% B: 3 26% C: 2 4% D: 3 6% C-UL, UL and VDE approved High input-output isolation voltage of 5Vrms Minimum BV CEO of 7V guaranteed Higher operating temperatures (versus HAXXX counterparts) Applications FOD84 Series AC line monitor Unknown polarity DC sensor Telephone line interface Series Power supply regulators Digital logic inputs Microprocessor inputs Functional Block Diagram ANODE, CATHODE CATHODE, ANODE 2 4 COLLECTOR 3 EMITTER ANODE CATHODE 2 Description December 2 The FOD84 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 4 COLLECTOR 3 EMITTER 4 FOD84 FOD84 Series, Series Rev...5

2 Absolute Maximum Ratings (T A = 25 C Unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE Parameter Value FOD84 T STG Storage Temperature -55 to +5 C T OPR Operating Temperature -55 to to + C T SOL Lead Solder Temperature 26 for sec C T J Junction Temperature 25 Max. C Units θ JC Junction-to-Case Thermal Resistance 2 C/W P TOT Total Power Dissipation 2 mw EMITTER I F Continuous Forward Current ±5 5 ma V R Reverse Voltage 6 P D Power Dissipation Derate above C 7.7 mw mw/ C DETECTOR V CEO Collector-Emitter Voltage 7 V V ECO Emitter-Collector Voltage 6 V I C Continuous Collector Current 5 ma P C Collector Power Dissipation Derate above 9 C mw mw/ C FOD84 Series, Series Rev...5 2

3 Electrical Characteristics (T A = 25 C Unless otherwise specified.) Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit EMITTER V F Forward Voltage FOD84 I F = ±2mA.2.4 V I F = 2mA.2.4 I R Reverse Leakage Current V R = 4.V µa C t Terminal Capacitance FOD84 V =, f = khz 5 25 pf V =, f = khz 3 25 DETECTOR I CEO Collector Dark Current FOD84 V CE = 2V, I F = na V CE = 2V, I F = BV CEO Collector-Emitter Breakdown FOD84 I C =.ma, I F = 7 V Voltage I C =.ma, I F = 7 BV ECO Emitter-Collector Breakdown FOD84 I E = µa, I F = 6 V Voltage I E = µa, I F = 6 DC Transfer Characteristics Symbol CTR V CE (sat) DC Characteristic Device Test Conditions Min. Typ.* Max. Unit Current Transfer Ratio Collector-Emitter Saturation Voltage AC Transfer Characteristics FOD84 I F = ±ma, V CE = 5V () 2 3 % FOD84A 5 5 I F = 5mA, V CE = 5V () 5 6 A 8 6 B 3 26 C 2 4 D 3 6 FOD84 I F = ±2mA, I C = ma..2 V I F = 2mA, I C = ma..2 Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit f C Cut-Off Frequency FOD84 V CE = 5V, I C = 2mA, R L = Ω, -3dB 5 8 khz t r Response Time (Rise) FOD84, V CE = 2 V, I C = 2mA, R L = Ω (2) 4 8 µs t f Response Time (Fall) FOD84, 3 8 µs *Typical values at T A = 25 C FOD84 Series, Series Rev...5 3

4 Electrical Characteristics (T A = 25 C Unless otherwise specified.) (Continued) Isolation Characteristics Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units V ISO Input-Output Isolation Voltage (3) *Typical values at T A = 25 C FOD84, R ISO Isolation Resistance FOD84, C ISO Isolation Capacitance FOD84, f = 6Hz, t = min, I I-O 2µA Notes:. Current Transfer Ratio (CTR) = I C /I F x %. 2. For test circuit setup and waveforms, refer to page For this test, Pins and 2 are common, and Pins 3 and 4 are common. 5 Vac(rms) V I-O = 5VDC 5x x Ω V I-O =, f = MHz.6. pf FOD84 Series, Series Rev...5 4

5 Typical Electrical/Optical Characteristics (T A = 25 C Unless otherwise specified.) COLLECTOR POWER DISSIPATION PC (mw) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FORWARD CURRENT IF (ma) Fig. Collector Power Dissipation vs. Ambient Temperature (FOD84) Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Ic =.5mA ma 3mA 5mA 7mA Ta = 25 C FORWARD CURRENT I F (ma) 5. Fig. 5 Forward Current vs. Forward Voltage () T A = o C 75 o C 5 o C 25 o C o C -3 o C -55 o C FORWARD VOLTAGE V F (V) COLLECTOR POWER DISSIPATION PC (mw) FORWARD CURRENT IF (ma) CURRENT TRANSFER RATIO CTR ( %) Fig. 2 Collector Power Dissipation vs. Ambient Temperature () Fig. 4 Forward Current vs. Forward Voltage (FOD84) T A = 5 o C 75 o C 5 o C V CE = 5V Ta= 25 C FORWARD VOLTAGE V F (V) Fig. 6 Current Transfer Ratio vs. Forward Current FOD84 25 o C o C -3 o C -55 o C FORWARD CURRENT I F (ma) FOD84 Series, Series Rev...5 5

6 Typical Electrical/Optical Characteristics (Continued) (T A = 25 C Unless otherwise specified.) COLLECTOR CURRENT IC (ma) RELATIVE CURRENT TRANSFER RATIO (%) LED POWER DISSIPATION PLED (mw) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD84) I F = 3mA Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature I F = 5mA V CE = 5V 2 ma ma FOD84 I F = ma V CE = 5V 5mA Pc(MAX.) ma Ta= 25 C COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. LED Power Dissipation vs. Ambient Temperature (FOD84) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) LED POWER DISSIPATION PLED (mw) COLLECTOR CURRENT IC (ma) Fig. Collector-Emitter Saturation Voltage vs. Ambient Temperature.2 I = 2mA F I. C = ma I I F = 3mA Fig. 8 Collector Current vs. Collector-Emitter Voltage () 2mA ma 5m A Ta = 25 C Pc(MAX.) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. 2 LED Power Dissipation vs. Ambient Temperature () FOD84 Series, Series Rev...5 6

7 Typical Electrical/Optical Characteristics (Continued) (T A = 25 C Unless otherwise specified.) RESPONSE TIME (µs) Test Circuit for Response Time Input R D Fig. 3 Response Time vs. Load Resistance V CE = 2V Ic= 2mA Ta= 25 C tr LOAD RESISTANCE R L (kω) td ts tf COLLECTOR DARK CURRENT I CEO (na) Vcc Input Output RL Output td. tr ts tf % 9% VOLTAGE GAIN A V (db) Fig. 5 Collector Dark Current vs. Ambient Temperature V CE = 2V Fig. 4 Frequency Response R L=k k FREQUENCY f (khz) Test Circuit for Frequency Response Vcc R D V CE = 2V Ic = 2mA Ta = 25 C RL Output FOD84 Series, Series Rev...5 7

8 Package Dimensions Through Hole SEATING PLANE.5 (3.8). (2.8).3 (3.3).9 (2.3). (2.79).9 (2.29).2 (5.).6 (4.).4" Lead Spacing SEATING PLANE.2 (5.).6 (4.).3 (3.3).9 (2.3).5 (3.8). (2.8).24 (.6).6 (.4).57 (4.).8 (3.).2 (.5) TYP.24 (.6).6 (.4).57 (4.).8 (3.). (2.79).9 (2.29).32 (7.92).288 (7.32).276 (7.).236 (6.). (.26).393 (9.98).3 (7.62).32 (7.92).288 (7.32).276 (7.).236 (6.). (2.8). (.8).42 (.66).38 (9.66) Note: All dimensions are in inches (millimeters).29 (7.4).252 (6.4). (.26) Surface Mount Surface Mount (Footprint Dimensions) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: SEATING PLANE.5 (.3).43 (.). (2.79).9 (2.29).2 (5.).6 (4.).57 (4.).8 (3.).24 (.6).4 (.) Lead Coplanarity.4 (.) MAX (7.92).288 (7.32).276 (7.).236 (6.).49 (.25).3 (.76).42 (.46).388 (9.86) 9. (.26) FOD84 Series, Series Rev...5 8

9 Ordering Information Option Part Number Example Description S FOD84S Surface Mount Lead Bend SD FOD84SD Surface Mount; Tape and reel 3 FOD843 VDE Approved 3W FOD843W VDE Approved,.4" Lead Spacing 3S FOD843S VDE Approved, Surface Mount 3SD FOD843SD VDE Approved, Surface Mount, Tape & Reel Marking Information 3 V 4 X Definitions Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) 4 One digit year code 5 Two digit work week ranging from to 53 6 Assembly package code Y = Manufactured in Thailand YA = Manufactured in China 5 ZZ 84 Y 6 2 FOD84 Series, Series Rev...5 9

10 Carrier Tape Specifications Ø.55±.5 Note: All dimensions are in millimeters. Symbol Description Dimensions in mm (inches) W Tape wide 6 ±.3 (.63) P Pitch of sprocket holes 4 ±. (.5) F P 2 Distance of compartment 7.5 ±. (.295) 2 ±. (.79) P Distance of compartment to compartment 2 ±. (.472) A Compartment.45 ±. (.4) B 5.3 ±. (.29) K 4.25 ±. (.67) P 2 P A P.75±. F B W.3±.5 K FOD84 Series, Series Rev...5

11 Lead Free Recommended IR Reflow Condition Temperature ( C) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) Tp Tsmax Tsmin 25 C C ~ 5 C 6 ~ 2 sec Melt soldering zone 83 C 6 ~ 2 sec Recommended Wave Soldering condition 5 C ~ 2 C 6 ~2 sec 27 C 3 ~ 9 sec Peak temperature (Tp) 24 +/-5 C 26 +/-5 C Ramp-down rate 6 C/sec max. 6 C/sec max. Profile Feature Peak temperature (Tp) ts (Preheat) Time (sec) For all solder assembly Max 26 C for sec Ramp-down Soldering zon FOD84 Series, Series Rev...5

12 FOD84 Series, Series Rev...5 2