The MOSFET as an Amp and Switch

Size: px
Start display at page:

Download "The MOSFET as an Amp and Switch"

Transcription

1 11/1/004 The MSFET as an Amp and Switchdoc 1/14 The MSFET as an Amp and Switch Consider this simple MSFET circuit: Q: h, goody you re going to waste my time with another of these pointless academic problems Why can t you discuss a circuit that actually does something? v 50V R D =1K v K=075 ma/v A: Actually, this circuit is a fundamental electronic device! To see what this circuit does, we need to v = f v determine its transfer function Q: Transfer function! How can we determine the transfer function of a MSFET circuit!? A: Same as with junction diodes we determine the output v for each device mode, and then determine when (ie, for what values of v ) the device is in that mode!

2 11/1/004 The MSFET as an Amp and Switchdoc /14 First, note that regardless of the MSFET mode: v = v 00 = v GS i D 50V R D =1K and: v = v 00 = v DS K=075 ma/v + v From KVL, we can likewise conclude that: v = v = 50 i R DS D D v + v GS - v DS - Now let s ASSUME that the MSFET is in cutoff, thus ENFRCNG i D =0 Therefore: v = 50 i R D D = = 50V Now, we know that MSFET is in cutoff when: v = v < V = 10 GS t Thus, we conclude that: v = 50V when v < 10 V

3 11/1/004 The MSFET as an Amp and Switchdoc 3/14 Now, let s ASSUME that the MSFET is in saturation, thus ENFRCE: D i = K v V GS t ( V ) = K v And thus the output voltage is: v = 50 i R t = 075 v 10 D D = v 10 1 = v 10 Now, we know that MSFET is in saturation when: and when: v = v > V = 10 GS t v = v > v V = v 10 DS GS t This second inequality means: v > v v 10 > v 10 0> 075 v 10 + v Solving this quadratic, we find that the only consistent solution is: v 10 < 0 v < 30

4 11/1/004 The MSFET as an Amp and Switchdoc 4/14 Meaning that the MSFET is in saturation when v > 10 and v < 30 Logically, this is same thing as saying the MSFET is in saturation when 10 < v < 30 Thus we conclude: v = v 10 when 10 < v < 30 V Finally, let s ASSUME that the MSFET is in triode mode, thus we ENFRCE: id = K ( vgs Vt ) vds v DS And thus the output voltage is: = 075 v 10 v v v = 50 i R D D = v 10 v v 1 = v 10 v v Rearranging this equation, we get the quadratic form: The solutions of which are: 075 v 15 v 05 v + 50 = 0 v = 15 v 05 ± 15 v

5 11/1/004 The MSFET as an Amp and Switchdoc 5/14 Note because of the ±, there are two possible solutions However, to be in triode region, the MSFET must not be in pinchoff, ie: v = v < v V = v 10 DS GS t This condition is satisfied with the smaller of the two solutions (ie, the solution with the minus sign!): v = 15 v v So, the above expression provides us with the output voltage if the MSFET is in triode mode The question remaining is thus when (ie, for what values of V ) is the MSFET in triode mode? We could do a lot more math to find this answer, but this answer is actually quite obvious! Recall that we have already determined that: a) The MSFET is in cutoff when v < 10V b) The MSFET is in saturation when 10 < v < 30V Since there are only three modes of a MSFET device, and since the transfer function must well be a function, we can conclude (correctly) that the MSFET will be in triode region when v is the value of the only region that is left--v > 3 0!

6 11/1/004 The MSFET as an Amp and Switchdoc 6/14 Thus we can conclude that: 15 v v v = when v > 3 0 V 15 We now have determined the complete, continuous transfer function of this circuit! 0 when v < 1 0 V v = ( v 1 0 ) when 1 0 < v < 3 0 V ( 15 v 05 ) ( 15 v 05 ) 150 when v > 3 0 V v NMS in cutoff NMS in saturation NMS in triode v

7 11/1/004 The MSFET as an Amp and Switchdoc 7/14 Q: thought you said this circuit did something t appears to be just as pointless as all the others! A: To see how this circuit is useful, consider what happens when the input voltage v is 0 V and 5V From the transfer function, we find that if v = 0, the output voltage will be v = 50 Likewise, if the input voltage is v = 50, the output voltage will be small, specifically v = 078V 50 v 078 v Let s summarize these results in a table:

8 11/1/004 The MSFET as an Amp and Switchdoc 8/14 v v Mode Cutoff 50 small Triode (078) Why, this device is not useless at all! t is clearly a: This circuit provides a simple example of one of the primary applications of MSFET devices digital circuit design We can use MSFETs to make digital devices such as logic gates (AND, R, NR, etc), flip-flops, and digital memory We typically find that, just like this circuit, when a MSFET digital circuit is in either of its two binary states (ie, 0 or 1 ), the MSFETs in the circuit will either be in cutoff (i D =0) or in triode (v DS small) modes Cutoff and Triode are the MSFET modes associated with digital circuits and applications!

9 11/1/004 The MSFET as an Amp and Switchdoc 9/14 Q: So, just what good is the MSFET Saturation Mode?? Sir, it appears to me that the Saturation region is just a useless MSFET mode between cutoff and triode! A: Actually, we will find the MSFET saturation mode to be extremely useful! To see why, take the derivative of the above circuit s transfer function (ie, ): v v

10 11/1/004 The MSFET as an Amp and Switchdoc 10/14 We note that in cutoff and triode: dv dv 0 while in the saturation mode: dv 1 dv >> Q: h goody The slope of the transfer function is large when the MSFET is in saturation Am supposed to be impressed by that?! How are these results even remotely important!? A: Since in cutoff and triode = 0, a small change in input voltage v will result in almost no change in output voltage v Contrast this with the saturation region, where >> 1 This means that a small change in input voltage v results in a large change in the output voltage v! To see how this is important, consider the case where the input signal has both a DC and a small-signal (AC) component: v ( t) = V + v ( t) i

11 11/1/004 The MSFET as an Amp and Switchdoc 11/14 As a result, the output voltage likewise has both a DC and smallsignal component: v t = V + v t o Now, let s consider only the DC components We can select the DC input V such that the MSFET is placed in saturation The value V, along with the resulting DC output V, sets a DC bias point for this circuit By selecting the right value of V we could set this DC bias point to where the transfer function slope is the greatest: 50 v 50V DC Bias Point R D =1K V V V v K=075 ma/v V 30 Now, say we add a small-signal v i to this input DC voltage (ie, v ( t) = V + vi ( t) ) This small signal simply represents a small change in the input voltage from its average (ie, DC) value The result is of course as small change in the output voltage the small-signal output voltage v o (t)!

12 11/1/004 The MSFET as an Amp and Switchdoc 1/14 Now for the interesting part ( bet you were wondering when would get around to it)! The small change in the output voltage will have a much larger magnitude than the small change in the input! For example, if the input voltage changes by 1 mv (ie, v i =1mV), the output might change by, say, 5 mv (ie, v o = 5 mv) Q: Goodness! By how much would the output change in our example circuit? How can we determine the smallsignal output v o?? Determining how much the output voltage of our circuit will change when we change the input voltage by a small amount is very straightforward we simply take the derivative of the output voltage v with respect to input voltage v! By taking the derivative of v with respect to v (when the MSFET is in saturation, we find: ( ( 10) ) d v = = 150 v 1 0 for 1 0 < v < 3 0 This expression describes the slope of our circuit s transfer function (for 10 < v < 30) Note the slope with the largest magnitude occurs when v =30, providing a slope of -30 mv/mv

13 11/1/004 The MSFET as an Amp and Switchdoc 13/14 Thus, if we DC bias this circuit with V = 30 V (resulting in V = 0 V), we find that the small signal output will be 3 times the small signal input! For example, say that the input to our circuit is: v = cos ωt V (ie, V = 3 0 V and v = 001 cos ωt ) We would find that the output voltage would approximately be: i v = cos ωt V (ie, V = 0 V and v = 0 03 cos ωt ) Note then that: o vo = v = 30 = 30 v = 003 cos ωt i v i n other words, the magnitude of the small-signal output has a magnitude three times larger than the input magnitude We say then that our signal provides small-signal gain our circuit is also a small-signal amplifier!

14 11/1/004 The MSFET as an Amp and Switchdoc 14/14 see A small voltage change results in a big voltage change it s voltage gain! The MSFET saturation mode turns out to be excellent Even the simple circuit of this example is sufficient demonstrates to demonstrate the two primary applications of MSFET transistors--digital circuits and signal amplification Whereas the important MSFET regions for digital devices are triode and cutoff, MSFETs in amplifier circuits are typically biased into the saturation mode!

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. Whites, EE 320 Lecture 30 Page 1 of 8 Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. There are two different environments in which MOSFET amplifiers are found, (1) discrete circuits and

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor

More information

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits Notes about Small Signal Model for EE 40 Intro to Microelectronic Circuits 1. Model the MOSFET Transistor For a MOSFET transistor, there are NMOS and PMOS. The examples shown here would be for NMOS. Figure

More information

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2 Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 I SD = µ pcox( VSG Vtp)^2(1 + VSDλ) 2 From this equation it is evident that I SD is a function

More information

BJT Characteristics and Amplifiers

BJT Characteristics and Amplifiers BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor

More information

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load

More information

Diode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)

Diode Circuits. Operating in the Reverse Breakdown region. (Zener Diode) Diode Circuits Operating in the Reverse Breakdown region. (Zener Diode) In may applications, operation in the reverse breakdown region is highly desirable. The reverse breakdown voltage is relatively insensitive

More information

CHAPTER 2 POWER AMPLIFIER

CHAPTER 2 POWER AMPLIFIER CHATER 2 OWER AMLFER 2.0 ntroduction The main characteristics of an amplifier are Linearity, efficiency, output power, and signal gain. n general, there is a trade off between these characteristics. For

More information

Figure 1. Diode circuit model

Figure 1. Diode circuit model Semiconductor Devices Non-linear Devices Diodes Introduction. The diode is two terminal non linear device whose I-V characteristic besides exhibiting non-linear behavior is also polarity dependent. The

More information

COMMON-SOURCE JFET AMPLIFIER

COMMON-SOURCE JFET AMPLIFIER EXPERIMENT 04 Objectives: Theory: 1. To evaluate the common-source amplifier using the small signal equivalent model. 2. To learn what effects the voltage gain. A self-biased n-channel JFET with an AC

More information

3.4 - BJT DIFFERENTIAL AMPLIFIERS

3.4 - BJT DIFFERENTIAL AMPLIFIERS BJT Differential Amplifiers (6/4/00) Page 1 3.4 BJT DIFFERENTIAL AMPLIFIERS INTRODUCTION Objective The objective of this presentation is: 1.) Define and characterize the differential amplifier.) Show the

More information

Field-Effect (FET) transistors

Field-Effect (FET) transistors Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,

More information

The 2N3393 Bipolar Junction Transistor

The 2N3393 Bipolar Junction Transistor The 2N3393 Bipolar Junction Transistor Common-Emitter Amplifier Aaron Prust Abstract The bipolar junction transistor (BJT) is a non-linear electronic device which can be used for amplification and switching.

More information

Lecture 9 - MOSFET (I) MOSFET I-V Characteristics. March 6, 2003

Lecture 9 - MOSFET (I) MOSFET I-V Characteristics. March 6, 2003 6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics March 6, 23 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation

More information

Bob York. Transistor Basics - MOSFETs

Bob York. Transistor Basics - MOSFETs Bob York Transistor Basics - MOSFETs Transistors, Conceptually So far we have considered two-terminal devices that are described by a current-voltage relationship I=f(V Resistors: Capacitors: Inductors:

More information

Chapter 10 Advanced CMOS Circuits

Chapter 10 Advanced CMOS Circuits Transmission Gates Chapter 10 Advanced CMOS Circuits NMOS Transmission Gate The active pull-up inverter circuit leads one to thinking about alternate uses of NMOS devices. Consider the circuit shown in

More information

Lecture 9 - MOSFET (I) MOSFET I-V Characteristics. October 6, 2005

Lecture 9 - MOSFET (I) MOSFET I-V Characteristics. October 6, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 25 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation

More information

Common-Emitter Amplifier

Common-Emitter Amplifier Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,

More information

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base

More information

MAS.836 HOW TO BIAS AN OP-AMP

MAS.836 HOW TO BIAS AN OP-AMP MAS.836 HOW TO BIAS AN OP-AMP Op-Amp Circuits: Bias, in an electronic circuit, describes the steady state operating characteristics with no signal being applied. In an op-amp circuit, the operating characteristic

More information

Bipolar Transistor Amplifiers

Bipolar Transistor Amplifiers Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must

More information

Lecture 39: Intro to Differential Amplifiers. Context

Lecture 39: Intro to Differential Amplifiers. Context Lecture 39: Intro to Differential Amplifiers Prof J. S. Smith Context Next week is the last week of lecture, and we will spend those three lectures reiewing the material of the course, and looking at applications

More information

Homework Assignment 03

Homework Assignment 03 Question 1 (2 points each unless noted otherwise) Homework Assignment 03 1. A 9-V dc power supply generates 10 W in a resistor. What peak-to-peak amplitude should an ac source have to generate the same

More information

Bipolar Junction Transistor Basics

Bipolar Junction Transistor Basics by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical

More information

Transistors. NPN Bipolar Junction Transistor

Transistors. NPN Bipolar Junction Transistor Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction

More information

Fundamentals of Microelectronics

Fundamentals of Microelectronics Fundamentals of Microelectronics H1 Why Microelectronics? H2 Basic Physics of Semiconductors H3 Diode ircuits H4 Physics of Bipolar ransistors H5 Bipolar Amplifiers H6 Physics of MOS ransistors H7 MOS

More information

Transistor Amplifiers

Transistor Amplifiers Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input

More information

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs

More information

Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS

Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections

More information

Fundamentals of Microelectronics

Fundamentals of Microelectronics Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors

More information

Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.)

Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.) Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.) Outline 1. The saturation regime 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 Announcements: 1. Quiz#1:

More information

Chapter 11 Current Programmed Control

Chapter 11 Current Programmed Control Chapter 11 Current Programmed Control Buck converter v g i s Q 1 D 1 L i L C v R The peak transistor current replaces the duty cycle as the converter control input. Measure switch current R f i s Clock

More information

So far we have investigated combinational logic for which the output of the logic devices/circuits depends only on the present state of the inputs.

So far we have investigated combinational logic for which the output of the logic devices/circuits depends only on the present state of the inputs. equential Logic o far we have investigated combinational logic for which the output of the logic devices/circuits depends only on the present state of the inputs. In sequential logic the output of the

More information

EDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- ", Raj Kamal, 1

EDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- , Raj Kamal, 1 EDC Lesson 12: Transistor and FET Characteristics Lesson-12: MOSFET (enhancement and depletion mode) Characteristics and Symbols 2008 EDCLesson12- ", Raj Kamal, 1 1. Metal Oxide Semiconductor Field Effect

More information

Lab Report No.1 // Diodes: A Regulated DC Power Supply Omar X. Avelar Omar de la Mora Diego I. Romero

Lab Report No.1 // Diodes: A Regulated DC Power Supply Omar X. Avelar Omar de la Mora Diego I. Romero Instituto Tecnológico y de Estudios Superiores de Occidente (ITESO) Periférico Sur Manuel Gómez Morín 8585, Tlaquepaque, Jalisco, México, C.P. 45090 Analog Electronic Devices (ESI038 / SE047) Dr. Esteban

More information

BJT Ebers-Moll Model and SPICE MOSFET model

BJT Ebers-Moll Model and SPICE MOSFET model Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57] Common-Base Configuration (CB) The CB configuration having a low input and high output impedance and a current gain less than 1, the voltage gain can be quite large, r o in MΩ so that ignored in parallel

More information

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the

More information

Section 3. Sensor to ADC Design Example

Section 3. Sensor to ADC Design Example Section 3 Sensor to ADC Design Example 3-1 This section describes the design of a sensor to ADC system. The sensor measures temperature, and the measurement is interfaced into an ADC selected by the systems

More information

5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET)

5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) This material is from a previous edition of Microelectronic Circuits. These sections provide valuable information, but please note that the references do not correspond to the 6th or 7th edition of the

More information

How To Calculate The Power Gain Of An Opamp

How To Calculate The Power Gain Of An Opamp A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 8 p. 1/23 EE 42/100 Lecture 8: Op-Amps ELECTRONICS Rev C 2/8/2012 (9:54 AM) Prof. Ali M. Niknejad University of California, Berkeley

More information

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1 CO2005: Electronics I The Field-Effect Transistor (FET) Electronics I, Neamen 3th Ed. 1 MOSFET The metal-oxide-semiconductor field-effect transistor (MOSFET) becomes a practical reality in the 1970s. The

More information

School of Engineering Department of Electrical and Computer Engineering

School of Engineering Department of Electrical and Computer Engineering 1 School of Engineering Department of Electrical and Computer Engineering 332:223 Principles of Electrical Engineering I Laboratory Experiment #4 Title: Operational Amplifiers 1 Introduction Objectives

More information

DIODE CIRCUITS LABORATORY. Fig. 8.1a Fig 8.1b

DIODE CIRCUITS LABORATORY. Fig. 8.1a Fig 8.1b DIODE CIRCUITS LABORATORY A solid state diode consists of a junction of either dissimilar semiconductors (pn junction diode) or a metal and a semiconductor (Schottky barrier diode). Regardless of the type,

More information

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.

More information

OPERATIONAL AMPLIFIERS

OPERATIONAL AMPLIFIERS INTRODUCTION OPERATIONAL AMPLIFIERS The student will be introduced to the application and analysis of operational amplifiers in this laboratory experiment. The student will apply circuit analysis techniques

More information

3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1

3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3. Diodes and Diode Circuits 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3.1 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current

More information

Solutions to Bulb questions

Solutions to Bulb questions Solutions to Bulb questions Note: We did some basic circuits with bulbs in fact three main ones I can think of I have summarized our results below. For the final exam, you must have an understanding of

More information

An FET Audio Peak Limiter

An FET Audio Peak Limiter 1 An FET Audio Peak Limiter W. Marshall Leach, Jr., Professor Georgia Institute of Technology School of Electrical and Computer Engineering Atlanta, Georgia 30332-0250 USA email: mleach@ee.gatech.edu Copyright

More information

Chapter 12: The Operational Amplifier

Chapter 12: The Operational Amplifier Chapter 12: The Operational Amplifier 12.1: Introduction to Operational Amplifier (Op-Amp) Operational amplifiers (op-amps) are very high gain dc coupled amplifiers with differential inputs; they are used

More information

Biasing in MOSFET Amplifiers

Biasing in MOSFET Amplifiers Biasing in MOSFET Amplifiers Biasing: Creating the circuit to establish the desired DC oltages and currents for the operation of the amplifier Four common ways:. Biasing by fixing GS. Biasing by fixing

More information

Lecture 12: DC Analysis of BJT Circuits.

Lecture 12: DC Analysis of BJT Circuits. Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode

More information

Analog & Digital Electronics Course No: PH-218

Analog & Digital Electronics Course No: PH-218 Analog & Digital Electronics Course No: PH-18 Lec 3: Rectifier and Clipper circuits Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Rectifier Circuits:

More information

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors. LM 358 Op Amp S k i l l L e v e l : I n t e r m e d i a t e OVERVIEW The LM 358 is a duel single supply operational amplifier. As it is a single supply it eliminates the need for a duel power supply, thus

More information

BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back

More information

Lecture 22: Class C Power Amplifiers

Lecture 22: Class C Power Amplifiers Whites, EE 322 Lecture 22 Page 1 of 13 Lecture 22: lass Power Amplifiers We discovered in Lecture 18 (Section 9.2) that the maximum efficiency of lass A amplifiers is 25% with a resistive load and 50%

More information

Lecture 3: DC Analysis of Diode Circuits.

Lecture 3: DC Analysis of Diode Circuits. Whites, EE 320 Lecture 3 Page 1 of 10 Lecture 3: DC Analysis of Diode Circuits. We ll now move on to the DC analysis of diode circuits. Applications will be covered in following lectures. Let s consider

More information

Conversion Between Analog and Digital Signals

Conversion Between Analog and Digital Signals ELET 3156 DL - Laboratory #6 Conversion Between Analog and Digital Signals There is no pre-lab work required for this experiment. However, be sure to read through the assignment completely prior to starting

More information

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. You will use the MOSFET as a variable resistor and as a switch. BACKGROUND

More information

Decimal Number (base 10) Binary Number (base 2)

Decimal Number (base 10) Binary Number (base 2) LECTURE 5. BINARY COUNTER Before starting with counters there is some vital information that needs to be understood. The most important is the fact that since the outputs of a digital chip can only be

More information

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Whites, EE 322 Lecture 24 Page 1 of 10 Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Oscillators are circuits that produce periodic output voltages, such as sinusoids. They accomplish this feat

More information

AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE

AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE Thank you for purchasing your Amplified High Speed Fiber Photodetector. This user s guide will help answer any questions you may have regarding the

More information

Fundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder

Fundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder Robert W. Erickson University of Colorado, Boulder 1 1.1. Introduction to power processing 1.2. Some applications of power electronics 1.3. Elements of power electronics Summary of the course 2 1.1 Introduction

More information

Differential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C

Differential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C ESE39 ntroduction to Microelectronics Differential Amplifier Offset Causes of dc voltage and current offset Modeling dc offset mismatch S mismatch β mismatch transistor mismatch dc offsets in differential

More information

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW You need to first identify the physical

More information

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics 192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing

More information

Lab 7: Operational Amplifiers Part I

Lab 7: Operational Amplifiers Part I Lab 7: Operational Amplifiers Part I Objectives The objective of this lab is to study operational amplifier (op amp) and its applications. We will be simulating and building some basic op amp circuits,

More information

EXPERIMENT NUMBER 8 CAPACITOR CURRENT-VOLTAGE RELATIONSHIP

EXPERIMENT NUMBER 8 CAPACITOR CURRENT-VOLTAGE RELATIONSHIP 1 EXPERIMENT NUMBER 8 CAPACITOR CURRENT-VOLTAGE RELATIONSHIP Purpose: To demonstrate the relationship between the voltage and current of a capacitor. Theory: A capacitor is a linear circuit element whose

More information

Basic Op Amp Circuits

Basic Op Amp Circuits Basic Op Amp ircuits Manuel Toledo INEL 5205 Instrumentation August 3, 2008 Introduction The operational amplifier (op amp or OA for short) is perhaps the most important building block for the design of

More information

MSFET 3332. MICROSENS Miniature ph Sensor Module

MSFET 3332. MICROSENS Miniature ph Sensor Module Product Data Sheet MSFET 3332 MICROSENS Miniature ph Sensor Module Ta2O5 gate Ion Sensitive Field Effect transistor (ISFET) The MSFET3332 ph sensor module comprises a ph-isfet sensing element, an integrated

More information

MOS Transistors as Switches

MOS Transistors as Switches MOS Transistors as Switches G (gate) nmos transistor: Closed (conducting) when Gate = 1 (V DD ) D (drain) S (source) Oen (non-conducting) when Gate = 0 (ground, 0V) G MOS transistor: Closed (conducting)

More information

ECE124 Digital Circuits and Systems Page 1

ECE124 Digital Circuits and Systems Page 1 ECE124 Digital Circuits and Systems Page 1 Chip level timing Have discussed some issues related to timing analysis. Talked briefly about longest combinational path for a combinational circuit. Talked briefly

More information

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers 554 20 Principles of Electronics Silicon Controlled Rectifiers 20.1 Silicon Controlled Rectifier (SCR) 20.2 Working of SCR 20.3 Equivalent Circuit of SCR 20.4 Important Terms 20.5 V-I Characteristics of

More information

Differential Amplifier Common & Differential Modes

Differential Amplifier Common & Differential Modes Differential Amplifier Common & Differential Modes Common & Differential Modes BJT Differential Amplifier Diff. Amp Voltage Gain and Input Impedance Small Signal Analysis Differential Mode Small Signal

More information

g fs R D A V D g os g os

g fs R D A V D g os g os AN12 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain

More information

Binary Adders: Half Adders and Full Adders

Binary Adders: Half Adders and Full Adders Binary Adders: Half Adders and Full Adders In this set of slides, we present the two basic types of adders: 1. Half adders, and 2. Full adders. Each type of adder functions to add two binary bits. In order

More information

Lecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002

Lecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002 Lecture 060 PushPull Output Stages (1/11/04) Page 0601 LECTURE 060 PUSHPULL OUTPUT STAGES (READING: GHLM 362384, AH 226229) Objective The objective of this presentation is: Show how to design stages that

More information

Content Map For Career & Technology

Content Map For Career & Technology Content Strand: Applied Academics CT-ET1-1 analysis of electronic A. Fractions and decimals B. Powers of 10 and engineering notation C. Formula based problem solutions D. Powers and roots E. Linear equations

More information

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the

More information

Design of a TL431-Based Controller for a Flyback Converter

Design of a TL431-Based Controller for a Flyback Converter Design of a TL431-Based Controller for a Flyback Converter Dr. John Schönberger Plexim GmbH Technoparkstrasse 1 8005 Zürich 1 Introduction The TL431 is a reference voltage source that is commonly used

More information

Theory of Transistors and Other Semiconductor Devices

Theory of Transistors and Other Semiconductor Devices Theory of Transistors and Other Semiconductor Devices 1. SEMICONDUCTORS 1.1. Metals and insulators 1.1.1. Conduction in metals Metals are filled with electrons. Many of these, typically one or two per

More information

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 Introduction This note will discuss AC analysis using the beta, re transistor model shown in Figure 1 for the three types of amplifiers: common-emitter,

More information

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment.

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment. Op-Amp Simulation EE/CS 5720/6720 Read Chapter 5 in Johns & Martin before you begin this assignment. This assignment will take you through the simulation and basic characterization of a simple operational

More information

Lock - in Amplifier and Applications

Lock - in Amplifier and Applications Lock - in Amplifier and Applications What is a Lock in Amplifier? In a nut shell, what a lock-in amplifier does is measure the amplitude V o of a sinusoidal voltage, V in (t) = V o cos(ω o t) where ω o

More information

Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: Biasing and Small Signal Model Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

More information

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices.

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Outline Here we introduced () basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Circuit Logic Gate A logic gate is an elemantary building block

More information

An Introduction to the EKV Model and a Comparison of EKV to BSIM

An Introduction to the EKV Model and a Comparison of EKV to BSIM An Introduction to the EKV Model and a Comparison of EKV to BSIM Stephen C. Terry 2. 3.2005 Integrated Circuits & Systems Laboratory 1 Overview Characterizing MOSFET operating regions EKV model fundamentals

More information

VI. Transistor amplifiers: Biasing and Small Signal Model

VI. Transistor amplifiers: Biasing and Small Signal Model VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.

More information

University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits

University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits LTSpice LTSpice is a free circuit simulator based on Berkeley

More information

electronics fundamentals

electronics fundamentals electronics fundamentals circuits, devices, and applications THOMAS L. FLOYD DAVID M. BUCHLA Lesson 1: Diodes and Applications Center-Tapped Full-wave Rectifier The center-tapped (CT) full-wave rectifier

More information

EE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier

EE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier EE 330 Lecture 21 Small Signal Analsis Small Signal Analsis of BJT Amplifier Review from Last Lecture Comparison of Gains for MOSFET and BJT Circuits IN (t) A B BJT CC 1 R EE OUT I R C 1 t If I D R =I

More information

= V peak 2 = 0.707V peak

= V peak 2 = 0.707V peak BASIC ELECTRONICS - RECTIFICATION AND FILTERING PURPOSE Suppose that you wanted to build a simple DC electronic power supply, which operated off of an AC input (e.g., something you might plug into a standard

More information

Transconductance. (Saturated) MOSFET Small-Signal Model. The small-signal drain current due to v gs is therefore given by

Transconductance. (Saturated) MOSFET Small-Signal Model. The small-signal drain current due to v gs is therefore given by 11 (Saturated) MOSFET Small-Signal Model Transconductance Concept: find an equivalent circuit which interrelates the incremental changes in i D v GS v DS etc. for the MOSFET in saturation The small-signal

More information

DEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING

DEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING SESSION WEEK COURSE: Electronic Technology in Biomedicine DEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING DESCRIPTION GROUPS (mark X) SPECIAL ROOM FOR SESSION (Computer class

More information

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

Testing a power supply for line and load transients

Testing a power supply for line and load transients Testing a power supply for line and load transients Power-supply specifications for line and load transients describe the response of a power supply to abrupt changes in line voltage and load current.

More information