The MOSFET as an Amp and Switch
|
|
- Juniper Byrd
- 7 years ago
- Views:
Transcription
1 11/1/004 The MSFET as an Amp and Switchdoc 1/14 The MSFET as an Amp and Switch Consider this simple MSFET circuit: Q: h, goody you re going to waste my time with another of these pointless academic problems Why can t you discuss a circuit that actually does something? v 50V R D =1K v K=075 ma/v A: Actually, this circuit is a fundamental electronic device! To see what this circuit does, we need to v = f v determine its transfer function Q: Transfer function! How can we determine the transfer function of a MSFET circuit!? A: Same as with junction diodes we determine the output v for each device mode, and then determine when (ie, for what values of v ) the device is in that mode!
2 11/1/004 The MSFET as an Amp and Switchdoc /14 First, note that regardless of the MSFET mode: v = v 00 = v GS i D 50V R D =1K and: v = v 00 = v DS K=075 ma/v + v From KVL, we can likewise conclude that: v = v = 50 i R DS D D v + v GS - v DS - Now let s ASSUME that the MSFET is in cutoff, thus ENFRCNG i D =0 Therefore: v = 50 i R D D = = 50V Now, we know that MSFET is in cutoff when: v = v < V = 10 GS t Thus, we conclude that: v = 50V when v < 10 V
3 11/1/004 The MSFET as an Amp and Switchdoc 3/14 Now, let s ASSUME that the MSFET is in saturation, thus ENFRCE: D i = K v V GS t ( V ) = K v And thus the output voltage is: v = 50 i R t = 075 v 10 D D = v 10 1 = v 10 Now, we know that MSFET is in saturation when: and when: v = v > V = 10 GS t v = v > v V = v 10 DS GS t This second inequality means: v > v v 10 > v 10 0> 075 v 10 + v Solving this quadratic, we find that the only consistent solution is: v 10 < 0 v < 30
4 11/1/004 The MSFET as an Amp and Switchdoc 4/14 Meaning that the MSFET is in saturation when v > 10 and v < 30 Logically, this is same thing as saying the MSFET is in saturation when 10 < v < 30 Thus we conclude: v = v 10 when 10 < v < 30 V Finally, let s ASSUME that the MSFET is in triode mode, thus we ENFRCE: id = K ( vgs Vt ) vds v DS And thus the output voltage is: = 075 v 10 v v v = 50 i R D D = v 10 v v 1 = v 10 v v Rearranging this equation, we get the quadratic form: The solutions of which are: 075 v 15 v 05 v + 50 = 0 v = 15 v 05 ± 15 v
5 11/1/004 The MSFET as an Amp and Switchdoc 5/14 Note because of the ±, there are two possible solutions However, to be in triode region, the MSFET must not be in pinchoff, ie: v = v < v V = v 10 DS GS t This condition is satisfied with the smaller of the two solutions (ie, the solution with the minus sign!): v = 15 v v So, the above expression provides us with the output voltage if the MSFET is in triode mode The question remaining is thus when (ie, for what values of V ) is the MSFET in triode mode? We could do a lot more math to find this answer, but this answer is actually quite obvious! Recall that we have already determined that: a) The MSFET is in cutoff when v < 10V b) The MSFET is in saturation when 10 < v < 30V Since there are only three modes of a MSFET device, and since the transfer function must well be a function, we can conclude (correctly) that the MSFET will be in triode region when v is the value of the only region that is left--v > 3 0!
6 11/1/004 The MSFET as an Amp and Switchdoc 6/14 Thus we can conclude that: 15 v v v = when v > 3 0 V 15 We now have determined the complete, continuous transfer function of this circuit! 0 when v < 1 0 V v = ( v 1 0 ) when 1 0 < v < 3 0 V ( 15 v 05 ) ( 15 v 05 ) 150 when v > 3 0 V v NMS in cutoff NMS in saturation NMS in triode v
7 11/1/004 The MSFET as an Amp and Switchdoc 7/14 Q: thought you said this circuit did something t appears to be just as pointless as all the others! A: To see how this circuit is useful, consider what happens when the input voltage v is 0 V and 5V From the transfer function, we find that if v = 0, the output voltage will be v = 50 Likewise, if the input voltage is v = 50, the output voltage will be small, specifically v = 078V 50 v 078 v Let s summarize these results in a table:
8 11/1/004 The MSFET as an Amp and Switchdoc 8/14 v v Mode Cutoff 50 small Triode (078) Why, this device is not useless at all! t is clearly a: This circuit provides a simple example of one of the primary applications of MSFET devices digital circuit design We can use MSFETs to make digital devices such as logic gates (AND, R, NR, etc), flip-flops, and digital memory We typically find that, just like this circuit, when a MSFET digital circuit is in either of its two binary states (ie, 0 or 1 ), the MSFETs in the circuit will either be in cutoff (i D =0) or in triode (v DS small) modes Cutoff and Triode are the MSFET modes associated with digital circuits and applications!
9 11/1/004 The MSFET as an Amp and Switchdoc 9/14 Q: So, just what good is the MSFET Saturation Mode?? Sir, it appears to me that the Saturation region is just a useless MSFET mode between cutoff and triode! A: Actually, we will find the MSFET saturation mode to be extremely useful! To see why, take the derivative of the above circuit s transfer function (ie, ): v v
10 11/1/004 The MSFET as an Amp and Switchdoc 10/14 We note that in cutoff and triode: dv dv 0 while in the saturation mode: dv 1 dv >> Q: h goody The slope of the transfer function is large when the MSFET is in saturation Am supposed to be impressed by that?! How are these results even remotely important!? A: Since in cutoff and triode = 0, a small change in input voltage v will result in almost no change in output voltage v Contrast this with the saturation region, where >> 1 This means that a small change in input voltage v results in a large change in the output voltage v! To see how this is important, consider the case where the input signal has both a DC and a small-signal (AC) component: v ( t) = V + v ( t) i
11 11/1/004 The MSFET as an Amp and Switchdoc 11/14 As a result, the output voltage likewise has both a DC and smallsignal component: v t = V + v t o Now, let s consider only the DC components We can select the DC input V such that the MSFET is placed in saturation The value V, along with the resulting DC output V, sets a DC bias point for this circuit By selecting the right value of V we could set this DC bias point to where the transfer function slope is the greatest: 50 v 50V DC Bias Point R D =1K V V V v K=075 ma/v V 30 Now, say we add a small-signal v i to this input DC voltage (ie, v ( t) = V + vi ( t) ) This small signal simply represents a small change in the input voltage from its average (ie, DC) value The result is of course as small change in the output voltage the small-signal output voltage v o (t)!
12 11/1/004 The MSFET as an Amp and Switchdoc 1/14 Now for the interesting part ( bet you were wondering when would get around to it)! The small change in the output voltage will have a much larger magnitude than the small change in the input! For example, if the input voltage changes by 1 mv (ie, v i =1mV), the output might change by, say, 5 mv (ie, v o = 5 mv) Q: Goodness! By how much would the output change in our example circuit? How can we determine the smallsignal output v o?? Determining how much the output voltage of our circuit will change when we change the input voltage by a small amount is very straightforward we simply take the derivative of the output voltage v with respect to input voltage v! By taking the derivative of v with respect to v (when the MSFET is in saturation, we find: ( ( 10) ) d v = = 150 v 1 0 for 1 0 < v < 3 0 This expression describes the slope of our circuit s transfer function (for 10 < v < 30) Note the slope with the largest magnitude occurs when v =30, providing a slope of -30 mv/mv
13 11/1/004 The MSFET as an Amp and Switchdoc 13/14 Thus, if we DC bias this circuit with V = 30 V (resulting in V = 0 V), we find that the small signal output will be 3 times the small signal input! For example, say that the input to our circuit is: v = cos ωt V (ie, V = 3 0 V and v = 001 cos ωt ) We would find that the output voltage would approximately be: i v = cos ωt V (ie, V = 0 V and v = 0 03 cos ωt ) Note then that: o vo = v = 30 = 30 v = 003 cos ωt i v i n other words, the magnitude of the small-signal output has a magnitude three times larger than the input magnitude We say then that our signal provides small-signal gain our circuit is also a small-signal amplifier!
14 11/1/004 The MSFET as an Amp and Switchdoc 14/14 see A small voltage change results in a big voltage change it s voltage gain! The MSFET saturation mode turns out to be excellent Even the simple circuit of this example is sufficient demonstrates to demonstrate the two primary applications of MSFET transistors--digital circuits and signal amplification Whereas the important MSFET regions for digital devices are triode and cutoff, MSFETs in amplifier circuits are typically biased into the saturation mode!
Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.
Whites, EE 320 Lecture 30 Page 1 of 8 Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. There are two different environments in which MOSFET amplifiers are found, (1) discrete circuits and
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor
More informationNotes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits
Notes about Small Signal Model for EE 40 Intro to Microelectronic Circuits 1. Model the MOSFET Transistor For a MOSFET transistor, there are NMOS and PMOS. The examples shown here would be for NMOS. Figure
More informationSmall Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2
Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 I SD = µ pcox( VSG Vtp)^2(1 + VSDλ) 2 From this equation it is evident that I SD is a function
More informationBJT Characteristics and Amplifiers
BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor
More informationSupplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf
EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load
More informationDiode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)
Diode Circuits Operating in the Reverse Breakdown region. (Zener Diode) In may applications, operation in the reverse breakdown region is highly desirable. The reverse breakdown voltage is relatively insensitive
More informationCHAPTER 2 POWER AMPLIFIER
CHATER 2 OWER AMLFER 2.0 ntroduction The main characteristics of an amplifier are Linearity, efficiency, output power, and signal gain. n general, there is a trade off between these characteristics. For
More informationFigure 1. Diode circuit model
Semiconductor Devices Non-linear Devices Diodes Introduction. The diode is two terminal non linear device whose I-V characteristic besides exhibiting non-linear behavior is also polarity dependent. The
More informationCOMMON-SOURCE JFET AMPLIFIER
EXPERIMENT 04 Objectives: Theory: 1. To evaluate the common-source amplifier using the small signal equivalent model. 2. To learn what effects the voltage gain. A self-biased n-channel JFET with an AC
More information3.4 - BJT DIFFERENTIAL AMPLIFIERS
BJT Differential Amplifiers (6/4/00) Page 1 3.4 BJT DIFFERENTIAL AMPLIFIERS INTRODUCTION Objective The objective of this presentation is: 1.) Define and characterize the differential amplifier.) Show the
More informationField-Effect (FET) transistors
Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,
More informationThe 2N3393 Bipolar Junction Transistor
The 2N3393 Bipolar Junction Transistor Common-Emitter Amplifier Aaron Prust Abstract The bipolar junction transistor (BJT) is a non-linear electronic device which can be used for amplification and switching.
More informationLecture 9 - MOSFET (I) MOSFET I-V Characteristics. March 6, 2003
6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics March 6, 23 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation
More informationBob York. Transistor Basics - MOSFETs
Bob York Transistor Basics - MOSFETs Transistors, Conceptually So far we have considered two-terminal devices that are described by a current-voltage relationship I=f(V Resistors: Capacitors: Inductors:
More informationChapter 10 Advanced CMOS Circuits
Transmission Gates Chapter 10 Advanced CMOS Circuits NMOS Transmission Gate The active pull-up inverter circuit leads one to thinking about alternate uses of NMOS devices. Consider the circuit shown in
More informationLecture 9 - MOSFET (I) MOSFET I-V Characteristics. October 6, 2005
6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 25 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation
More informationCommon-Emitter Amplifier
Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,
More informationAN105. Introduction: The Nature of VCRs. Resistance Properties of FETs
Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationBipolar Junction Transistors
Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base
More informationMAS.836 HOW TO BIAS AN OP-AMP
MAS.836 HOW TO BIAS AN OP-AMP Op-Amp Circuits: Bias, in an electronic circuit, describes the steady state operating characteristics with no signal being applied. In an op-amp circuit, the operating characteristic
More informationBipolar Transistor Amplifiers
Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must
More informationLecture 39: Intro to Differential Amplifiers. Context
Lecture 39: Intro to Differential Amplifiers Prof J. S. Smith Context Next week is the last week of lecture, and we will spend those three lectures reiewing the material of the course, and looking at applications
More informationHomework Assignment 03
Question 1 (2 points each unless noted otherwise) Homework Assignment 03 1. A 9-V dc power supply generates 10 W in a resistor. What peak-to-peak amplitude should an ac source have to generate the same
More informationBipolar Junction Transistor Basics
by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical
More informationTransistors. NPN Bipolar Junction Transistor
Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction
More informationFundamentals of Microelectronics
Fundamentals of Microelectronics H1 Why Microelectronics? H2 Basic Physics of Semiconductors H3 Diode ircuits H4 Physics of Bipolar ransistors H5 Bipolar Amplifiers H6 Physics of MOS ransistors H7 MOS
More informationTransistor Amplifiers
Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input
More informationLecture 21: Junction Field Effect Transistors. Source Follower Amplifier
Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs
More informationLecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS
Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections
More informationFundamentals of Microelectronics
Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors
More informationLecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.)
Lecture 9 MOSFET(II) MOSFET I-V CHARACTERISTICS(contd.) Outline 1. The saturation regime 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 Announcements: 1. Quiz#1:
More informationChapter 11 Current Programmed Control
Chapter 11 Current Programmed Control Buck converter v g i s Q 1 D 1 L i L C v R The peak transistor current replaces the duty cycle as the converter control input. Measure switch current R f i s Clock
More informationSo far we have investigated combinational logic for which the output of the logic devices/circuits depends only on the present state of the inputs.
equential Logic o far we have investigated combinational logic for which the output of the logic devices/circuits depends only on the present state of the inputs. In sequential logic the output of the
More informationEDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- ", Raj Kamal, 1
EDC Lesson 12: Transistor and FET Characteristics Lesson-12: MOSFET (enhancement and depletion mode) Characteristics and Symbols 2008 EDCLesson12- ", Raj Kamal, 1 1. Metal Oxide Semiconductor Field Effect
More informationLab Report No.1 // Diodes: A Regulated DC Power Supply Omar X. Avelar Omar de la Mora Diego I. Romero
Instituto Tecnológico y de Estudios Superiores de Occidente (ITESO) Periférico Sur Manuel Gómez Morín 8585, Tlaquepaque, Jalisco, México, C.P. 45090 Analog Electronic Devices (ESI038 / SE047) Dr. Esteban
More informationBJT Ebers-Moll Model and SPICE MOSFET model
Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationFig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]
Common-Base Configuration (CB) The CB configuration having a low input and high output impedance and a current gain less than 1, the voltage gain can be quite large, r o in MΩ so that ignored in parallel
More informationCIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low
CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the
More informationSection 3. Sensor to ADC Design Example
Section 3 Sensor to ADC Design Example 3-1 This section describes the design of a sensor to ADC system. The sensor measures temperature, and the measurement is interfaced into an ADC selected by the systems
More information5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET)
This material is from a previous edition of Microelectronic Circuits. These sections provide valuable information, but please note that the references do not correspond to the 6th or 7th edition of the
More informationHow To Calculate The Power Gain Of An Opamp
A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 8 p. 1/23 EE 42/100 Lecture 8: Op-Amps ELECTRONICS Rev C 2/8/2012 (9:54 AM) Prof. Ali M. Niknejad University of California, Berkeley
More informationCO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1
CO2005: Electronics I The Field-Effect Transistor (FET) Electronics I, Neamen 3th Ed. 1 MOSFET The metal-oxide-semiconductor field-effect transistor (MOSFET) becomes a practical reality in the 1970s. The
More informationSchool of Engineering Department of Electrical and Computer Engineering
1 School of Engineering Department of Electrical and Computer Engineering 332:223 Principles of Electrical Engineering I Laboratory Experiment #4 Title: Operational Amplifiers 1 Introduction Objectives
More informationDIODE CIRCUITS LABORATORY. Fig. 8.1a Fig 8.1b
DIODE CIRCUITS LABORATORY A solid state diode consists of a junction of either dissimilar semiconductors (pn junction diode) or a metal and a semiconductor (Schottky barrier diode). Regardless of the type,
More informationLecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.
Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.
More informationOPERATIONAL AMPLIFIERS
INTRODUCTION OPERATIONAL AMPLIFIERS The student will be introduced to the application and analysis of operational amplifiers in this laboratory experiment. The student will apply circuit analysis techniques
More information3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1
3. Diodes and Diode Circuits 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3.1 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current
More informationSolutions to Bulb questions
Solutions to Bulb questions Note: We did some basic circuits with bulbs in fact three main ones I can think of I have summarized our results below. For the final exam, you must have an understanding of
More informationAn FET Audio Peak Limiter
1 An FET Audio Peak Limiter W. Marshall Leach, Jr., Professor Georgia Institute of Technology School of Electrical and Computer Engineering Atlanta, Georgia 30332-0250 USA email: mleach@ee.gatech.edu Copyright
More informationChapter 12: The Operational Amplifier
Chapter 12: The Operational Amplifier 12.1: Introduction to Operational Amplifier (Op-Amp) Operational amplifiers (op-amps) are very high gain dc coupled amplifiers with differential inputs; they are used
More informationBiasing in MOSFET Amplifiers
Biasing in MOSFET Amplifiers Biasing: Creating the circuit to establish the desired DC oltages and currents for the operation of the amplifier Four common ways:. Biasing by fixing GS. Biasing by fixing
More informationLecture 12: DC Analysis of BJT Circuits.
Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-18 Lec 3: Rectifier and Clipper circuits Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Rectifier Circuits:
More informationLM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.
LM 358 Op Amp S k i l l L e v e l : I n t e r m e d i a t e OVERVIEW The LM 358 is a duel single supply operational amplifier. As it is a single supply it eliminates the need for a duel power supply, thus
More informationBIPOLAR JUNCTION TRANSISTORS
CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back
More informationLecture 22: Class C Power Amplifiers
Whites, EE 322 Lecture 22 Page 1 of 13 Lecture 22: lass Power Amplifiers We discovered in Lecture 18 (Section 9.2) that the maximum efficiency of lass A amplifiers is 25% with a resistive load and 50%
More informationLecture 3: DC Analysis of Diode Circuits.
Whites, EE 320 Lecture 3 Page 1 of 10 Lecture 3: DC Analysis of Diode Circuits. We ll now move on to the DC analysis of diode circuits. Applications will be covered in following lectures. Let s consider
More informationConversion Between Analog and Digital Signals
ELET 3156 DL - Laboratory #6 Conversion Between Analog and Digital Signals There is no pre-lab work required for this experiment. However, be sure to read through the assignment completely prior to starting
More informationLAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS
LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. You will use the MOSFET as a variable resistor and as a switch. BACKGROUND
More informationDecimal Number (base 10) Binary Number (base 2)
LECTURE 5. BINARY COUNTER Before starting with counters there is some vital information that needs to be understood. The most important is the fact that since the outputs of a digital chip can only be
More informationLecture 24: Oscillators. Clapp Oscillator. VFO Startup
Whites, EE 322 Lecture 24 Page 1 of 10 Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Oscillators are circuits that produce periodic output voltages, such as sinusoids. They accomplish this feat
More informationAMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE
AMPLIFIED HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE Thank you for purchasing your Amplified High Speed Fiber Photodetector. This user s guide will help answer any questions you may have regarding the
More informationFundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder
Robert W. Erickson University of Colorado, Boulder 1 1.1. Introduction to power processing 1.2. Some applications of power electronics 1.3. Elements of power electronics Summary of the course 2 1.1 Introduction
More informationDifferential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C
ESE39 ntroduction to Microelectronics Differential Amplifier Offset Causes of dc voltage and current offset Modeling dc offset mismatch S mismatch β mismatch transistor mismatch dc offsets in differential
More informationLAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS
LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW You need to first identify the physical
More informationTransistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics
192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing
More informationLab 7: Operational Amplifiers Part I
Lab 7: Operational Amplifiers Part I Objectives The objective of this lab is to study operational amplifier (op amp) and its applications. We will be simulating and building some basic op amp circuits,
More informationEXPERIMENT NUMBER 8 CAPACITOR CURRENT-VOLTAGE RELATIONSHIP
1 EXPERIMENT NUMBER 8 CAPACITOR CURRENT-VOLTAGE RELATIONSHIP Purpose: To demonstrate the relationship between the voltage and current of a capacitor. Theory: A capacitor is a linear circuit element whose
More informationBasic Op Amp Circuits
Basic Op Amp ircuits Manuel Toledo INEL 5205 Instrumentation August 3, 2008 Introduction The operational amplifier (op amp or OA for short) is perhaps the most important building block for the design of
More informationMSFET 3332. MICROSENS Miniature ph Sensor Module
Product Data Sheet MSFET 3332 MICROSENS Miniature ph Sensor Module Ta2O5 gate Ion Sensitive Field Effect transistor (ISFET) The MSFET3332 ph sensor module comprises a ph-isfet sensing element, an integrated
More informationMOS Transistors as Switches
MOS Transistors as Switches G (gate) nmos transistor: Closed (conducting) when Gate = 1 (V DD ) D (drain) S (source) Oen (non-conducting) when Gate = 0 (ground, 0V) G MOS transistor: Closed (conducting)
More informationECE124 Digital Circuits and Systems Page 1
ECE124 Digital Circuits and Systems Page 1 Chip level timing Have discussed some issues related to timing analysis. Talked briefly about longest combinational path for a combinational circuit. Talked briefly
More informationSilicon Controlled Rectifiers
554 20 Principles of Electronics Silicon Controlled Rectifiers 20.1 Silicon Controlled Rectifier (SCR) 20.2 Working of SCR 20.3 Equivalent Circuit of SCR 20.4 Important Terms 20.5 V-I Characteristics of
More informationDifferential Amplifier Common & Differential Modes
Differential Amplifier Common & Differential Modes Common & Differential Modes BJT Differential Amplifier Diff. Amp Voltage Gain and Input Impedance Small Signal Analysis Differential Mode Small Signal
More informationg fs R D A V D g os g os
AN12 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain
More informationBinary Adders: Half Adders and Full Adders
Binary Adders: Half Adders and Full Adders In this set of slides, we present the two basic types of adders: 1. Half adders, and 2. Full adders. Each type of adder functions to add two binary bits. In order
More informationLecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002
Lecture 060 PushPull Output Stages (1/11/04) Page 0601 LECTURE 060 PUSHPULL OUTPUT STAGES (READING: GHLM 362384, AH 226229) Objective The objective of this presentation is: Show how to design stages that
More informationContent Map For Career & Technology
Content Strand: Applied Academics CT-ET1-1 analysis of electronic A. Fractions and decimals B. Powers of 10 and engineering notation C. Formula based problem solutions D. Powers and roots E. Linear equations
More informationLAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS
LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the
More informationDesign of a TL431-Based Controller for a Flyback Converter
Design of a TL431-Based Controller for a Flyback Converter Dr. John Schönberger Plexim GmbH Technoparkstrasse 1 8005 Zürich 1 Introduction The TL431 is a reference voltage source that is commonly used
More informationTheory of Transistors and Other Semiconductor Devices
Theory of Transistors and Other Semiconductor Devices 1. SEMICONDUCTORS 1.1. Metals and insulators 1.1.1. Conduction in metals Metals are filled with electrons. Many of these, typically one or two per
More informationBJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008
by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 Introduction This note will discuss AC analysis using the beta, re transistor model shown in Figure 1 for the three types of amplifiers: common-emitter,
More informationOp-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment.
Op-Amp Simulation EE/CS 5720/6720 Read Chapter 5 in Johns & Martin before you begin this assignment. This assignment will take you through the simulation and basic characterization of a simple operational
More informationLock - in Amplifier and Applications
Lock - in Amplifier and Applications What is a Lock in Amplifier? In a nut shell, what a lock-in amplifier does is measure the amplitude V o of a sinusoidal voltage, V in (t) = V o cos(ω o t) where ω o
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationHere we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices.
Outline Here we introduced () basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Circuit Logic Gate A logic gate is an elemantary building block
More informationAn Introduction to the EKV Model and a Comparison of EKV to BSIM
An Introduction to the EKV Model and a Comparison of EKV to BSIM Stephen C. Terry 2. 3.2005 Integrated Circuits & Systems Laboratory 1 Overview Characterizing MOSFET operating regions EKV model fundamentals
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationUniversity of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits
University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits LTSpice LTSpice is a free circuit simulator based on Berkeley
More informationelectronics fundamentals
electronics fundamentals circuits, devices, and applications THOMAS L. FLOYD DAVID M. BUCHLA Lesson 1: Diodes and Applications Center-Tapped Full-wave Rectifier The center-tapped (CT) full-wave rectifier
More informationEE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier
EE 330 Lecture 21 Small Signal Analsis Small Signal Analsis of BJT Amplifier Review from Last Lecture Comparison of Gains for MOSFET and BJT Circuits IN (t) A B BJT CC 1 R EE OUT I R C 1 t If I D R =I
More information= V peak 2 = 0.707V peak
BASIC ELECTRONICS - RECTIFICATION AND FILTERING PURPOSE Suppose that you wanted to build a simple DC electronic power supply, which operated off of an AC input (e.g., something you might plug into a standard
More informationTransconductance. (Saturated) MOSFET Small-Signal Model. The small-signal drain current due to v gs is therefore given by
11 (Saturated) MOSFET Small-Signal Model Transconductance Concept: find an equivalent circuit which interrelates the incremental changes in i D v GS v DS etc. for the MOSFET in saturation The small-signal
More informationDEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING
SESSION WEEK COURSE: Electronic Technology in Biomedicine DEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING DESCRIPTION GROUPS (mark X) SPECIAL ROOM FOR SESSION (Computer class
More informationTransistor Characteristics and Single Transistor Amplifier Sept. 8, 1997
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationTesting a power supply for line and load transients
Testing a power supply for line and load transients Power-supply specifications for line and load transients describe the response of a power supply to abrupt changes in line voltage and load current.
More information