# AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs

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1 Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third. For a junction field-effect transistor (JFET) under certain operating conditions, the resistance of the drain-source channel is a function of the gate-source voltage alone and the JFET will behave as an almost pure ohmic resistor. Maximum drain-source current, I DSS, and minimum resistance r DS(on), will exist when the gate-source voltage is equal to zero volts ( = 0). If the gate voltage is increased (negatively for n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current is reduced to a point where the FET is no longer conductive, the maximum resistance is reached. The voltage at this point is referred to as the pinchoff or cutoff voltage and is symbolized by = (off). Thus the device functions as a voltage- controlled resistor. Ohmic Region Region 1 Region 2 Current Saturation Region Figure 1 details typical operating characteristics of an n- channel JFET. Most amplification or switching operations of FETs occur in the constant-current (saturated) region, shown as Region II. A close inspection of Region I (the unsaturated or pre-pinchoff area) reveals that the effective slope indicative of conductance across the channel from drain-to-source is different for each value of gate-source bias voltage. The slope is relatively constant over a range of applied drain voltages, so long as the gate voltage is also constant and the drain voltage is low. Resistance Properties of FETs The unique resistance-controlling properties of FETs can be deduced from Figure 2, which is an expanded-scale plot of the encircled area in the lower left-hand corner of Figure 1. The output characteristics all pass through the origin, near which they become almost straight lines so that the incremental value of channel resistance, r DS, is essentially the same as that of dc resistance, r DS, and is a function of. Figure 2 shows an extension of the operating characteristics into the third quadrant for a typical n-channel JFET. While such devices are normally operated with a positive drain-source voltage, small negative values of V DS are possible. This is because the gate-channel PN junction must be slightly forward-biased before any significant amount of gate current flows. The slope of the bias line is equal to I D /V DS = 1/r DS. This value is controlled by the amount of voltage applied to the gate. Minimum r DS, usually expressed as r DS(on), occurs at = 0 and is dictated by the geometry of the FET. A device with a channel of small cross-sectional area will exhibit a high r DS(on) and a low I DSS. Thus a FET with high I DSS should be chosen where design requirements indicate the need for a low r DS(on). Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, Please request FaxBack document # Siliconix 1

2 I D D G S V 200 ID ( A) ID (ma) V 2.5 V =.0 V = 0 V 1.5 V 2.5 V 5 10 V DS (V).0 V Siliconix offers a family of n-channel FETs specifically intended for use as voltage-controlled resistors. These devices have r DS(on) values ranging from 20 to 4,000, where 2N = 20 60, 4N = , 7N = 4 k 8 k. Applications for s A simple application of a FET is shown in Figure 4, the circuit for a voltage divider attenuator. R =.0 V V DS (mv) 2.5 V 1.5 V 0 V 200 Figure 4. Simple Attenuator Circuit The graph in Figure is useful in estimating r DS values at any given value of. The resistance is normalized to its specific value at = 0 V. The dynamic range of r DS is shown as greater than 100:1, although for best control of r DS a range of 10:1 is normally used. r DS (1) R r DS It is assumed that the output voltage is not so large as to push the out of the linear resistance region, and that the r DS is not shunted by the load V DS 0.1 V r DS(on) (min) R r (2) DS(on) /r DS(on) ( ) rds r DS(on) r DS 1 (off) /(off) Figure. Normalized r DS Data Signal Distortion: Causes Figure 2 shows that the bias lines bend down as V DS increases in a positive direction toward the pinch-off voltage of the FET. The bending of the bias lines results in a change in r DS, and hence the distortion encountered in circuits; note that the distortion occurs in both the first and third quadrants. Distortion results because the channel depletion layer increases as V DS reduces the drain current so that a pinch-off condition is reached when V DS = (off). Figure 5 shows how the current has an opposite effect in the third quadrant, increasing negatively with an increasingly negative V DS. This is due to the forward conduction of the gate-to-channel junction when the drain signal exceeds the negative gate bias voltage. 2 Siliconix

3 R Figure 5. R 1 G R R 2 V GG Diode Anode V 0 V Diode Cathode when Signal Swings Negative Simple Attenuator Circuit Linearization Reducing Signal Distortion The majority of applications require that signal distortion be kept to a minimum. Also, numerous applications require large signal handling capability. A simple feedback technique may be used to reduce distortion while permitting large signal handling capability; a small amount of drain signal is coupled to the gate through a resistor divider network, as shown in Figure 6. The application of a part of the positive drain signal to the gate causes the channel depletion layer to decrease, with a corresponding increase in drain current. Increasing the drain current for a given drain voltage tends to linearize the bias curves. On the negative half-cycle, a small negative voltage is coupled to the gate to reduce the amount of drain-gate forward bias. This in turn reduces the drain current and linearizes the bias lines. Now the channel resistance is dependent on the dc gate control voltage and not on the drain signal, unless the V DS = (off) locus is approached. Resistors R 2 and R in Figure 6 couple the drain signal to the gate; the resistor values are equal, so that symmetrical voltage-current characteristics are produced in both quadrants. The resistors must be sufficiently large to provide minimum loading to the circuit: R 2 = R // 10(r DS //R load //R 1 ) R 2 = R 10 [R 1 r DS (max) R L ] () Figure 6. Typically, 470-k resistors will work well for most applications. R 1 is selected so that the ratio of r DS(on) R L to [(r DS(on) R L ) R 1 ] give the desired output voltage, or: R 1 r DS(on) R L V O V I (4) (r DS(on) R L ) R 1 R 2 R V CONTROL Figure 7. The feedback technique used in Figure 6 requires that the gate control voltage, V GG, be twice as large as in Figure 5 for the same r DS value. Use of a floating supply between the resistor junction and the FET gate will overcome this problem. The circuit is shown in Figure 7 and allows the gate control voltage to be the same value as that voltage used without a feedback circuit, while preserving the advantages to be gained through the feedback technique. Siliconix

4 Experimental Results Figures 8 and 9 show low voltage output characteristic curves for a typical Siliconix n-channel voltage-controlled resistor, 7N. Bias conditions are shown both with and without feedback. Figure 8 shows a two-volt peak-to-peak signal on the = 0 V bias curve, with the operating in the first and third quadrants. The is operated without feedback. The forward-biased gate-drain PN junction may be seen at approximately 0.6 V, and bending of the bias curve is apparent in the third quadrant. The photo also demonstrates the comparison between a fixed resistor (the linear line superimposed on the bias curve) and the distortion apparent in the without feedback compensation; the signal is unusable with the indicated amount of distortion at 2 V peak-to-peak. In Figure 9, the same 7N FET is shown operating with the addition of the feedback resistors. Distortion has been reduced to less than 0.5%, and the characteristics of the are now closely comparable to those of a fixed resistor. In Figures 8 and 9, the same FET characteristics are shown, with adjusted for higher r DS. No feedback network is employed in Figure 8, and measured distortion is greater than 8%. In Figure 9, the feedback resistors have been added and distortion has been reduced to less than 0.5%. Some degree of non-linearity will be experienced in both the first and third quadrants as approaches the FET cut-off voltage. For this reason, it is important that the feedback resistors be of equal value so that the non-linearities likewise will be equal in both quadrants. 200 = V CONTROL 200 = V CONTROL = 0 V I D Drain Current ( A) = 0 V = 2.5 V I D Drain Current ( A) = V V CONTROL = 6 V V DS Drain-Source Voltage (V) V DS Drain-Source Voltage (V) Figure 8. 7N Without Feedback Figure 9. 7N With Feedback. Table 1: Distortion vs. Temperature Without Feedback With Feedback Temperature ( C) r DS = r DS(on) r DS = 10 r DS(on) r DS = r DS(on) r DS = 10 r DS(on) 125 >1% >6% <0.5% <0.5% 25 >10% >5% <0.5% <0.5% 55.9%.2% <0.5% <0.5% 4 Siliconix

5 Distortion resulting from changes in temperature is also minimized by the feedback resistor technique. On-resistance will change with temperature in an inverse manner to the behavior of FET drain current. Table 1 presents the result of laboratory performance tests of distortion versus temperature. The 7N again was employed. Signal level was 2 V peak-to-peak. Summary This application note has presented a brief description of the use of junction field-effect transistors as voltage-controlled resistors, including details of operation, characteristics, limitations, and applications. The is capable of operation as a symmetrical resistor with no dc bias voltage in the signal loop, an ideal characteristic for many applications. Where large signal-handling capability and minimum distortion are system requirements, the feedback neutralization technique for s is an important tool in achieving either or both ends. It has also been shown that FETs with high pinch-off voltage require larger drain-to-source voltages to produce drain current saturation. Therefore, FETs with high (off) will have a larger dynamic range in terms of applied signal amplitude, while maintaining a linear resistance. It is advantageous to select FETs with high (off) compatible with the desired r DS value if large signal levels are to be encountered. A number of other FET applications are shown in Figures 10 through 15. R 1 2 OPA 6 Video Input Video Output V R 2 Lowest frequency at JFET (off) and tuned by R 2. Upper frequency is controlled by R 1. The T attenuator provides for optimum dynamic linear range attenuation. Figure 10. Voltage-Tuned Filter Octave Range Figure 11. Voltage Controlled Variable Gain Amplifier 2 OPA 6 Figure 12. Electronic Gain Control Figure 1. Phase Advance Circuit Siliconix 5

6 Figure 14. Phase Retard Circuit Figure 15. Cascaded Attenuator Table 2: Popular JFETs for Applications Range r DS(on) ( ) M/C Hermetic Plastic Thru Hole* Suface Mount* N J111 SST N 2N5486 SST k 8 k 7N PN4119A SST4119 *Approximate equivalents to _N specifications. 6 Siliconix

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N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

### LAB IV. SILICON DIODE CHARACTERISTICS

LAB IV. SILICON DIODE CHARACTERISTICS 1. OBJECTIVE In this lab you are to measure I-V characteristics of rectifier and Zener diodes in both forward and reverse-bias mode, as well as learn to recognize

### Application Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY)

FREQUENY LINEAR TUNING VARATORS FREQUENY LINEAR TUNING VARATORS For several decades variable capacitance diodes (varactors) have been used as tuning capacitors in high frequency circuits. Most of these

### MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com

Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

### N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

### 3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1

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### AP-1 Application Note on Remote Control of UltraVolt HVPS

Basics Of UltraVolt HVPS Output Voltage Control Application Note on Remote Control of UltraVolt HVPS By varying the voltage at the Remote Adjust Input terminal (pin 6) between 0 and +5V, the UV highvoltage

### N-channel enhancement mode TrenchMOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

### CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor

CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Study the characteristics of energy bands as a function of applied voltage in the metal oxide semiconductor structure known

### Unit/Standard Number. High School Graduation Years 2010, 2011 and 2012

1 Secondary Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding of proper

### MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

### STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

### The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.

Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination

### MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid

### Digital Fundamentals

Digital Fundamentals Tenth Edition Floyd Chapter 1 2009 Pearson Education, Upper 2008 Pearson Saddle River, Education NJ 07458. All Rights Reserved Analog Quantities Most natural quantities that we see

### STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

### Lecture 24: Oscillators. Clapp Oscillator. VFO Startup

Whites, EE 322 Lecture 24 Page 1 of 10 Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Oscillators are circuits that produce periodic output voltages, such as sinusoids. They accomplish this feat