Introduction to ALD Lab Dresden and Atomic Layer Deposition

Transcription

1 Introduction to ALD Lab Dresden and Atomic Layer Deposition PROGRAM

2 Introduction to ALD Lab Dresden and Atomic Layer Deposition PROGRAM 1. Introduction to Atomic Layer Deposition a. ALD Historical background / Hall of Fame b. ALD Basic principle and Growth Mechanism c. ALD Reactors / Productivity Improvements d. ALD Processes for Logic and Memory Applications 2. Introduction to ALD Lab Dresden a. Background, Mission/Vision, Competences, Applications, b. Fraunhofer CNT ALD Application Lab

3 1.a. ALD Historical background / Hall of fame Prof. V.B. Aleskovskii (left) Proposed the concept of the ALD in his Ph.D. thesis published in Prof. S.I. Kol tsov (right) First publications as Molecular Layering in the early 1960s from Leningrad Technological Institute (LTI). Dr. Tuomo Suntola (right) Demonstrated ALD 1974 at Instrumentarium Oy, Finland Patented ALD (ALE) 1977 T. Suntola, "Methods for producing compound thin films", US patent Sven Lindfors (left) Constructing ALD R&D and production tools since 1975 (Lohja Oy, Mikrokemia Oy, ASM Microchemistry Ltd., Picosun, )

4 1.b. ALD Basic principle and growth mechanism Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. Reactant A Purge 1 Reactant B Purge 2 Reactions occur at the surface Self-limiting growth process: gas-surface reactions occur until surface is saturated. Films are very uniform, smooth Precise thickness control Exact stoichiometry control Low contamination Conformal films in high aspect ratio structures

5 1.b. ALD Basic principle and Growth Mechanism Example: Metal chloride / H 2 O process, e.g. AlCl 3 /H 2 O Al 2 O 3 T: C P: Torr Surface saturated by OH groups Inert gas N 2 or Ar

6 1.b. ALD Basic principle and Growth Mechanism 1) Reactant A : Metal precursor pulse Metal precursor is pulsed into the reactor, e.g. AlCl 3.

7 1.b. ALD Basic principle and Growth Mechanism 1) Reactant A : Metal precursor pulse The metal precursor reacts with surface -OH groups and chemisorbs to the surface, while leaving by-products to the gas phase, e.g. HCl.

8 1.b. ALD Basic principle and Growth Mechanism 1) Reactant A : Metal precursor pulse The pulse continues until the surface reaction is saturated.

9 1.b. ALD Basic principle and Growth Mechanism 2) Purge 1 The reactor is purged with an inert gas, e.g. N 2 or Ar, to remove by-products and unreacted metal precursor

10 1.b. ALD Basic principle and Growth Mechanism 2) Reactant B : Oxidizing precursor pulse The oxidant precursor (H 2 O) is pulsed into the reactor and reacts with the chemisorbed metal precursor leaving by-products in the gas phase (HCl).

11 1.b. ALD Basic principle and Growth Mechanism 2) Reactant B : Oxidizing precursor pulse The pulse continues until the surface reaction is saturated. Common oxidant precursors: H 2 O, H 2 O 2, N 2 O O 3, O 2 +,...

12 1.b. ALD Basic principle and Growth Mechanism 4) Purge 2 The reactor is purged once again with an inert gas to remove by-products and unreacted oxidizing precursor.

13 Growth rate 1.b. ALD Basic principle and Growth Mechanism Condensation Decomposition Activation Process Window Desorption Mono layer Ideal case Growth temperature

14 Growth Rate Thickness Step coverage Growth rate 1.b. ALD Basic principle and Growth Mechanism Condensation Decomposition Activation Process Window Desorption Mono layer In reality Any combination possible Growth temperature Saturation Thickness control Conformal growth ALD CVD PVD Precursor dose Number of deposition cycles Deposition rate

15 1.c. ALD Reactors / Productivity Improvement a b ALD reactor types : c d e f (a) showerhead type single wafer ALD (b) reactor batch ALD reactor (c) in-line spatial ALD reactor as designed by SoLayTec (d) in-line spatial ALD reactor as designed by Levitech (e) roll-to-roll ALD reactor as designed by Lotus Applied Technology (f) roll-to-roll ALD reactor as designed by Beneq J A van Delft et al 2012 Semicond. Sci. Technol

16 No Depletion Effect ALD Batch Processing for Low Cost of Ownership Injectors Gas Inlet Bottom ASM A412 DRAM Capacitors, Logic HKMG BENEQ TFS600 Encapsulation for OLED Fast ALD for Passivation of c-si solar cells SolayTec

17 Ultrafast ALD for Al 2 O 3 deposition Passivation of c-si solar cells Efficiency increase of up to 1% absolute Advantages: Atmospheric process Deposition rate up to 10 nm/s (complete system) Uniformity < 3.0% wiw, < 4.0% wtw Throughput up to 3600 wph

18 Spatial ALD for Wafer processing Atomic Layer Deposition Carousel With Continuous Rotation And Methods Of Use J Yudovsky - US Patent 20,120,225,195, 2012

19 Roll to Roll ALD BENEQ WCS 500

20 1.c. ALD Processes for Logic and Memory Applications BEOL Cu Barrier/Seed IBM IEDM 2011 Memory PVD/CVD TaN/Ta RuTa TaN + Co MnOx Imec 2009 FEOL HKMG Technologies Liners/Spacers S/D Contacts Double Patterning ASM PEALD SiO Double Patterning AMD 32nm Intel 45 nm 2007 Samsung Stacked DRAM MIS 90 nm 2004 Infineon DT DRAM 70 nm 2005

21 DRAM Capacitor Roadmap Samsung vs. ITRS Year EOT J A 10-9 A/cm High-k HfO 2 / ZrO 2 / Al 2 O ATO / STO / BST Bottom electrode TiN Ru / RuO 2 / Pt/ IrO 2 / SrRuO Half-pitch (nm) High-k Aspect Ratio Chipworks 2004 Samsung's 90 nm First use of ALD for DRAM 512-Mb DDR SDRAM MIS TiN/HfO 2 /Al 2 O 3 /Si

22 DRAM Capacitor Roadmap Samsung vs. ITRS Year EOT J A 10-9 A/cm High-k HfO 2 / ZrO 2 / Al 2 O ATO / STO / BST Bottom electrode TiN Ru / RuO 2 / Pt/ IrO 2 / SrRuO Half-pitch (nm) High-k Aspect Ratio Chipworks 2011 Samsung 20/30-nm DRAM TiN/ZrO 2 based/tin 6F2 Ti-? (likely TiN)-gate buried wordline * Samsung s 3x DDR3 SDRAM 4F2 or 6F2? You Be the Judge.. Posted on 1/31/2011 Chipworks Blog, Dick James

23 DRAM Capacitor Roadmap Samsung vs. ITRS Year EOT J A 10-9 A/cm [Imec reported at IEDM 2010] a record lowleakage MIM High-k capacitors, JG HfO of / ZrOA/cm2 2 / Al 2 Oat 3 0.4nm EOT, enabling to scale DRAM to the 2x nm Bottom electrode TiN node. The capacitors were realized using a novel TiN/RuOx/TiOx/STO/TiN Half-pitch (nm) stack 57 fabricated 50 in a High-k Aspect Ratio 300mm line with DRAM compatible processes. Chipworks ATO / STO / BST Ru / RuO 2 / Pt/ IrO 2 / SrRuO Samsung 3x -nm SDRAM TiN/ZrO2 based/tin

24 DRAM Capacitor Roadmap Samsung vs. ITRS Tighter pitch MIM Capacitor Challenges: 3x nm 2x nm TiN/ZrO 2 /TiN based TiN/ZrO 2 /TiN based Taller capacitor 1x nm Not(!) STO based High-k CET Improvement ~ nm Thinner than 6 nm Forget about STO etc. Electrodes Wf well above 5 <100 mohmcm Bottom electrode <3 nm

25 Logic Roadmap Intel vs. Foundry ALD enables Scaling Performance Low power Materials

26 Logic Roadmap Intel vs. Foundry III-V channel Nanowire Tri-gate has quite a number of very innovative elements the most critical of which are not in production in any foundry today. The complexity resides in developing a true gate-last stack with dielectric and metal deposited last with atomic layer deposition (ALD) tools. - Prof. Scott Thompson, University of Florida [semimd.com]

27 Logic Roadmap Intel vs. Foundry

28 Logic Roadmap Intel vs. Foundry

29 2.a. Introduction to ALD Lab Dresden VISITING LOCATIONS 1) Fraunhofer-Center Nanoelektronische Technologien, CNT 2) Fraunhofer-Institut für Keramische Technologien und Systeme, IKTS 3) Fraunhofer-Institut für Photonische Mikrosysteme, IPMS 4) NaMLab ggmbh 5) Institut für Halbleiter- und Mikrosystemtechnik, IHM x3 x1 x4,5 x2

30 2.a. Introduction to ALD Lab Dresden VISION A competence center for Atomic Layer Deposition (ALD) in Saxony / Germany as a partner for applied industrial research and development and production MISSION Head to head evaluation with conventional deposition techniques (Sol gel, PVD, CVD) Consultation and evaluation for Industry R&D projects. Technology transfer to industry partners Novel ALD precursors, materials and technologies scaled up from laboratory to pilot production : Environmental, safety and health (ESH) Manufacturability Productivity / Low cost of ownership

31 2.a. Introduction to ALD Lab Dresden COMPETENCES Rapid ALD precursor screening Fundamental research on nucleation and film growth Materials research and development TECHNOLOGIES Thermal ALD, plasma enhanced ALD, thermal flash ALD and molecular layer deposition (MLD) Large Batch, shower head and cross flow ALD reactors Solid and liquid precursor vaporization and injection systems In-situ metrology (QMS, QCM, Q-MACS, Ellipsometry, XPS, AFM, STM) Analytics

32 2.a. Introduction to ALD Lab Dresden APPLICATIONS Micro- and Nanoelectronic devices Diffusion barriers for organic electronics (OLED) Renewable energy sources, Energy storages and harvesting Industrial coatings for wear and corrosion protection CONFERENCES / WORKSHOPS / NETWORKING Novel high k Application Workshop, NaMLab 2012 ( ) INPLAS Talks "ALD and Friends, Fraunhofer IST ( ) ALD Workshop - von der Grundlage zur industriellen, EFDS ( ) AVS ALD / BALD 2012, NaMLab ( ) WoDiM, Fraunhofer CNT ( ) Semicon Europa, ALD Lab Dresden ( ) Workshop Nano- und. Oberflächentechnologien ( ) Fraunhofer CNT Research Day ( )

33 2.a. Introduction to ALD Lab Dresden

34 2.c. Fraunhofer CNT ALD Application Lab Docking Research into Manufacturing Platform for material and process development on 300mm Si wafer Short learning cycles Industrial-grade clean room Infrastructure Linked to 300mm production lines 800 m 2 Clean Room Area 200 m 2 Lab Area 40 Tools (Processing + Metrology) External customers (IC manufacturers, Foundries)

35 2.c. Fraunhofer CNT ALD Application Lab ALD from Lab to Fab in Dresden FHR ALD 300 Jusung EUREKA ASM Pulsar 3000 ALD Experts External Lab Process transfer ASM A412

36 Volume [Wafers/Month] 2.c. Fraunhofer CNT ALD Application Lab ALD from Lab to Fab in Dresden Research & Development Production 200k ALD Experts IPMS/IKTS/CNT 20k 2k Months 2

37 2.a. Introduction to ALD Lab Dresden PROGRAM