Introduction to Picosun

Transcription

1 Introduction to Picosun MIICS th -16 th March Satu Ek/ Picosun Pioneering ALD experience since 1974

2 Picosun the company overview Background Picosun Oy (Ltd) established in Pioneering ALD experience since early seventies. Core business: Developing and manufacturing high quality R&D and production ALD tools for the world wide markets. Profitable for 5 consecutive years, fast-growing: 100% growth in FY 2010 (5/2010 4/2011). Sales est. 10+ M in FY 2011 (5/2011 4/2012). Mission To develop and manufacture top quality ALD equipment and processes for today s and future s global production and R&D market. Because of our uniquely scalable and versatile design, the same ALD equipment can be smoothly upgraded from R&D to industrial scale manufacturing. Team Core team: 12 PhD s & experts in ALD (Board of Directors included). Altogether 35+ people and 40+ subcontracting companies take part in the operation.

3 Picosun the company overview Uniqueness in the field Picosun s history dates back to the invention of the ALD technology itself. Picosun Board Member Dr.(tech.) Tuomo Suntola invented the method in 1974 and another Board Member, Mr. Sven Lindfors has designed and developed top quality ALD process tools since 1975 almost four decades of pioneering experience and know-how on ALD. Sole concentration on ALD since the beginning Since the beginning, ALD has been Picosun s sole focus and exclusive business area. Reactor design honed to perfection through over 15 tool generations and constant two-way feedback with customers Picosun tools in daily use in high profile industries and top research organizations on four continents Global sales and support organization, redistributors in ca. 30 countries.

4 Picosun worldwide HQ in Espoo, Finland Factory in Masala, Finland Picosun Asia, Singapore Picosun USA, Detroit, Michigan Global Distribution Partner Network Worldwide Sales and Support

5 Principle of ALD (Al 2 O 3 film growth as an example)

6 Advantages of ALD Source control Surface control ALD = surface controlled method Conventional CVD methods = source controlled deposition Pictures credit T. Suntola ~100% conformal Precise thickness control Excellent uniformity Pinhole- and defect-free films Repeatable process Low process temperatures Graded or mixed layers/nanolaminates

7 ALD precursors Typical deposition pressure 1 10 hpa (mbar) Typical deposition temperature (100) (500) o C (even < 100 o C temperatures with plasmaenhanced ALD) Properties of an optimal precursor Highly reactive to complementary precursor Sufficiently volatile, reproducible vaporization rate Stable, no self-reaction, decomposition Optimal ligand size No etching of the film/substrate Easy synthesis and handling Non-toxic, environmentally friendly Sufficient purity

8 ALD processes Oxides Dielectrics Al 2 O 3, TiO 2, ZrO 2, HfO 2, Ta 2 O 5, Nb 2 O 5, Sc 2 O 3, Y 2 O 3, MgO, B 2 O 3, SiO 2, GeO 2, La 2 O 3, CeO 2, PrO x, Nd 2 O 3, Sm 2 O 3, EuO x, Gd 2 O 3, Dy 2 O 3, Ho 2 O 3, Er 2 O 3, Tm 2 O 3, Yb 2 O 3, Lu 2 O 3, SrTiO 3, BaTiO 3, PbTiO 3, PbZrO 3, Bi x Ti y O, Bi x Si y O, SrTa 2 O 6, SrBi 2 Ta 2 O 9, YScO 3, LaAlO 3, NdAlO 3, GdScO 3, LaScO 3, LaLuO 3, Er 3 Ga 5 O 13 Nitrides Conductors/ Semiconductors In 2 O 3, In 2 O 3 :Sn, In 2 O 3 :F, In 2 O 3 :Zr, SnO 2, SnO 2 :Sb, ZnO, ZnO:Al, ZnO:B, ZnO:Ga, RuO 2, RhO 2, IrO 2, Ga 2 O 3, V 2 O 5, WO 3, W 2 O 3, NiO, FeO x, CrO x, CoO x, MnO x Other ternaries LaCoO 3, LaNiO 3, LaMnO 3, La 1-x Ca x MnO 3 Semiconductors/ Dielectrics BN, AlN, GaN, InN, SiN x, Ta 3 N 5, Cu 3 N, Zr 3 N 4, Hf 3 N 4 Metallics TiN, TiSiN, TiAlN, TiAlCN, TaN, NbN, MoN, WC x, WN x, Ternaries WN x C y, TaC x N y II-VI compounds Binaries ZnS, ZnSe, ZnTe, CaS, SrS, BaS, CdS, CdTe, MnTe, HgTe, Doped compounds ZnS:M (M = Mn, Tb, Tm), CaS:M (M = Eu, Ce, Tb, Pb), SrS:M (M = Ce, Tb, Pb) III-V compounds Binaries GaAs, AlAs, AlP, InP, GaP, InAs Fluorides Binaries CaF 2, SrF 2, MgF 2, LaF 3, YF 3, ZnF 2 Elements Metals Ru, Pt, Ir, Pd, Rh, Ag, Au, W, Cu, Co, Fe, Ni, Mo, Ta, Ti, Al, Si, Ge Others La 2 S 3, PbS, In 2 S 3, Cu x S, CuGaS 2, Y 2 O 2 S, WS 2, TiS 2, SiC, TiC x, TaC x, WC x,

9 ALD application areas Semiconductors Micro/nanoelectronics Gate dielectrics DRAM Gate electrodes Metal interconnects Read heads Diffusion barriers Multilayer capacitors MEMS/NEMS Wear resistant Solid lubricants Anti-corrosion Mold and dies Blade edges Optics OLED layers Optical filters Transparent conductors Solar cells Antireflection Photonic crystals Integrated optics UV blocking Electroluminescense Colored coatings Microchannel plates Fresnel-zone plates Nanostructures Inside pores AFM tips Around particles Nanotubes/wires Chemical Catalysis Fuel cells Batteries Other Nano-glue Internal tube liners Roll to roll Biocompatible Magnetic

10 Picosun s participation in EU projects FP7: Corrosion protection with perfect atomic layers (CORRAL); ended in 2011 FP7: All-inorganic nano-rod based thin-film solarcells (ROD-SOL); ended in 2011 FP7: Modern polymer-based catalysts and microflow conditions as key elements of innovations in fine chemical synthesis (POLYCAT); ENIAC: Efficient silicon multi-chip system-inpackage integration Reliability, failure analysis and test (ESiP); ENIAC: Energy-efficient piezo-mems tunable RF front end antenna systems for mobile systems (EPAMO);

11 PICOSUN ALD systems product lines R-Series Manual or semi-automatic for research and development Highly versatile and customizable for single/batch wafer, 3D, through-porous, particle samples P-Series Fully automatic single and batch wafer processes for High-Volume-Manufacturing Wafers up to 300 mm diameter and large 3D objects Throughput can be upscaled to even thousands of wafers per hour with several P-series reactors clustered together and operated with an industrial robot

12 PICOSUN product lines Central features of PICOSUN ALD systems Dual chamber hot wall reactor No condensation on the vacuum chamber walls No undesirable secondary reaction routes Ultra-low particle count (down to 1-2 > 90nm particles/wafer!), long maintenance cycles Top-flow distribution of precursors from separate inlets, via pre-heated source lines Gas flow direction optimal to the substrate surface Easy to coat even challenging throughporous samples or large wafer batches No cross-contamination or premature reacting between precursors Specifically designed, innovative source heating/boosting system for precursors of low vapor pressure Material Nonuniformity Single (S) / batch (B) process (1σ) AI 2 O % B SiO % B TiO % S TiN 1.1 % S ZnO 0.94 % S Pt 3.41 % S PEALD Al 2 O % Target (1σ) thickness non-uniformity in-wafer < 1 % 0.51 % thickness non-uniformity in-batch < 1 % 0.80 % deposition rate variation batch-to-batch < 1 % 0.18 % Film thickness uniformity data of an Al 2 O 3 batch process in a PICOSUN ALD tool. PEALD AlN 0.62 % S PEALD In 2 O % S PEALD ZnO 2.64 % S Excellent film uniformities achieved in Picosun thermal and plasma (PEALD) processes. Wafer size 6, 49 point measurement. S Measured (1σ)

13 PICOPLASMA PEALD source system Inductively coupled remote plasma source system based on highly reactive radicals for top quality PEALD without plasma damage to the substrate Widens the selection of precursors and process chemistries by enabling use of also lesser reactivity chemicals Possibility to lower processing temperatures due to high energy of the radicals sensitive, fragile substrates such as polymers, plastic, papers... Possible to use the same tool both in plasma and thermal mode. Example: 100 nm Al 2 O 300 o C thermal process on 8 Si wafer without any technical changes to the tool: 1σ 0.9% (process time 33 min) Best-seller since its launch: in daily use by several key customers on three continents Multiple patents

14 PICOPLATFORM ALD cluster system Multifunctional, integrated, ALD cluster system comprised of several individual Picosun reactors connected with a vacuum robot central unit fully automatic cassette-tocassette loading Several different simultaneous coating processes from various precursors (oxides, nitrides & other conventionals to metals/metallics, polymers etc) Smooth moving of substrates between the individual reaction chambers without manual handling or vacuum break between process steps UHV and chloride compatible, source heating possible up to 300 o C, both thermal & plasma ALD in same unit, enhanded diffusion with stop-flow system possible Possibility to combine also other processing modules such as pre-cleaning, etching, PVD/CVD to the central unit

15 PICOSUN R-200 with PICOPLASMA

16 PICOPLATFORM and PICOSUN P-300

17 PICOPLATFORM ALD cluster system

18 PICOPLATFORM ALD cluster system

19 Summary Picosun is a fast growing company with unique ALD technology for industrial manufacturing Picosun welcomes industry and research partners to join us for full range collaboration Picosun is committed to use ALD technology for building a cleaner world

20 Network Companies New Precursors Thin film materials Processes Applications EU -projects Universities and research institutes Customers

21 Thank You/ Kiitokset!