Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Transcription

1 PD IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low R DSon Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) Enable better thermal dissipation % Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRFH5020TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5020TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Absolute Maximum Ratings V DS V GS I T A = 25 C I T A = 70 C I T C(Bottom) = 25 C I T C(Bottom) = C I T C(Top) = 25 C I T C(Top) = C I DM P A = 25 C P T C(Top) = 25 C T J T STG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Pulsed Drain Current c Power Dissipation g Power Dissipation f Linear Derating Factor f Operating Junction and Storage Temperature Range to 50 Notes through are on page 8 Max. 200 ± Note Units V A W W/ C C /7/09

2 IRFH5020PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 200 V ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.02 V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V ΔV GS(th) Gate Threshold Voltage Coefficient -2 V DS = V GS, I D = 50μA mv/ C I DSS Drain-to-Source Leakage Current 20 μa V DS = 200V, V GS = 0V.0 ma V DS = 200V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 8 S V DS = 50V, I D = 7.5A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 8.6 V DS = V Q gs2 Post-Vth Gate-to-Source Charge 2. nc V GS = V Q gd Gate-to-Drain Charge I D = 7.5A Q godr Gate Charge Overdrive 4 See Fig.7 & 8 Q sw Switch Charge (Q gs2 Q gd ) 3 Q oss Output Charge 3 nc V DS = 6V, V GS = 0V R G Gate Resistance.9 Ω t d(on) Turn-On Delay Time 9.3 V DD = V, V GS = V t r Rise Time 7.7 I D = 7.5A ns t d(off) Turn-Off Delay Time 2 R G =.8Ω t f Fall Time 6.0 See Fig.5 C iss Input Capacitance 2290 V GS = 0V C oss Output Capacitance 20 pf V DS = V C rss Reverse Transfer Capacitance 33 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 320 mj I AR Avalanche Current c 7.5 A Diode Characteristics Conditions V GS = 0V, I D = 250μA Reference to 25 C, I D = ma V GS = V, I D = 7.5A e Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 7.5 (Body Diode) showing the A I G SM Pulsed Source Current integral reverse 63 (Body Diode)c p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C, I S = 7.5A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 7.5A, V DD = V Q rr Reverse Recovery Charge nc di/dt = 500A/μs e t on Forward Turn-On Time Time is dominated by parasitic Inductance D S Thermal Resistance Parameter Typ. Max. Units R θjc (Bottom) Junction-to-Case f 0.5 R θjc (Top) Junction-to-Case f 5 C/W R θja Junction-to-Ambient g 35 R θja (<s) Junction-to-Ambient g 2 2

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH5020PbF 0 VGS TOP V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 0 VGS TOP V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V V 60μs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 4.5V 60μs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 T J = 50 C 2.0 I D = 7.5A V GS = V.5 T J = 25 C.0 V DS = 50V 60μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 6 2 I D = 7.5A V DS = 60V V DS = V V DS = 40V 0 Ciss 8 Coss Crss 4 0 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage 3

4 I D, Drain Current (A) I SD, Reverse Drain Current (A) V GS (th) Gate threshold Voltage (V) I D, Drain-to-Source Current (A) IRFH5020PbF 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage msec msec μsec Tc = 25 C Tj = 50 C Single Pulse 0 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area I D =.0A I D =.0mA I D = 500μA I D = 50μA T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current Vs. Case (Top) Temperature T J, Temperature ( C ) Fig. Threshold Voltage Vs. Temperature D = Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) E-006 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top) 4

5 R DS (on), Drain-to -Source On Resistance (mω) E AS, Single Pulse Avalanche Energy (mj) IRFH5020PbF I D = 7.5A I D TOP.A.6A BOTTOM 7.5A T J = 25 C T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T IAS 0.0Ω - V DD A I AS Fig 4a. Unclamped Inductive Test Circuit Fig 4b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 90% VV GS Pulse Width µs Duty Factor % V GS t d(on) t r t d(off) t f Fig 5a. Switching Time Test Circuit Fig 5b. Switching Time Waveforms 5

6 IRFH5020PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs 0 K S DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 7. Gate Charge Test Circuit Fig 8. Gate Charge Waveform 6

7 IRFH5020PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-54 at PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: 7

8 IRFH5020PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JES D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.3mH, R G = 25Ω, I AS = 7.5A. ƒ Pulse width 400μs; duty cycle 2%. R θ is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information./