Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM V
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1 TS985C6R Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM V Average output current Io 50Hz Square wave duty =/2 Tc = 86 C 20 * A Non-repetitive forward surge current** IFSM Sine wave, ms shot 50 A Operating junction temperature Tj - 50 C Storage temperature Tstg to +50 C Note* Out put current of center tap full wave connection. Note** Rating per element Electrical characteristics (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Maximum Units Forward voltage*** VF IF = A 3.0 V Reverse current*** IR VR =VRRM 30 µa Reverse recovery time*** trr IF =0.A, IR =0.2A, Irec =0.05A µs Thermal resistance Rth(j-c) Junction to case.25 C/W Note*** Rating per element Mechanical characteristics Item Conditions Maximum Units Approximate mass -.6 g
2 Outline Drawings [mm] 2
![[mm] 2](/docs-images/42/3510580/images/page_2.jpg)
3 Forward Characteristic (typ.) 2 Reverse Characteristic (typ.) Tj=50 C Tj=25 C Tj=0 C IF Forward Current (A) Tj=50 C Tj=25 C Tj=0 C Tj=25 C IR Reverse Current (µa) 0 - Tj=25 C VF Forward Voltage (V) VR Reverse Voltage (V) 35 Forward Power Dissipation (max.) Reverse Power Dissipation (max.) DC VR I 0 WF Forward Power Dissipation (W) λ Square wave λ=60 Square wave λ=20 Sine wave λ=80 Square wave λ=80 DC PR Reverse Power Dissipation (W) α α= Per element IF(AV) Average Forward Current (A) VR Reverse Voltage (V) 3
4 60 Current Derating (IF(AV)-Tc) (max.) 00 Junction Capacitance Characteristic (typ.) Tc Case Temperature ( C) DC Cj Junction Capacitance (pf) Square wave λ=80 Sine wave λ=80 80 Square wave λ=20 70 Square wave λ= IF(AV) Average Forward Current (A) 0 00 λ:conduction angle of forward current for each rectifier element IF(AV):Forward current of center-tap full wave connection VR Reverse Voltage (V) 00 Surge Capability (max.) IFSM Peak Half - Wave Current (A) 0 Number of Cycles at 50Hz 0 4
5 2 Transient Thermal Impedance (max.) Transient Thermal Impedance ( C/W) 0 Rth j-c:.25 /W t Time (sec) 5
6 WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 20. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright by Fuji Electric Systems Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6
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1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction
BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T
BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
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30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics
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IRLR8729PbF IRLU8729PbF
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65 V, 100 ma PNP/PNP general-purpose transistor
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DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.
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TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view) 2002-09-25
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IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
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PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
TL783C, TL783Y HIGH-VOLTAGE ADJUSTABLE REGULATOR
HIGH-VOLTAGE USTABLE REGULATOR SLVS36C SEPTEMBER 1981 REVISED APRIL 1997 Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider 7-mA Output Current Full Short-Circuit, Safe-Operating-Area,
MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS
Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150
NUD4011. Low Current LED Driver
NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive
Schottky Barrier Diode
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STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A