(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (20 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector performing the function of a Zero Voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equipment powered from Vac lines, such as teletypewriters, CRTs, printers, motors, solenoids and consumer appliances, etc. Simplifies Logic Control of Vac Power Zero Voltage Crossing dv/dt of 2000 V/µs Typical, 000 V/µs Guaranteed To order devices that are tested and marked per VDE 088 requirements, the suffix V must be included at end of part number. VDE 088 is a test option. Recommended for Vac(rms) Applications: Solenoid/Valve Controls Temperature Controls Lighting Controls E.M. Contactors Static Power Switches AC Motor Starters AC Motor Drives Solid State Relays MAXIMUM RATINGS (TA = 2 C unless otherwise noted) INFRARED LED Rating Symbol Value Unit Reverse Voltage VR Volts Forward Current Continuous IF 0 ma Total Power TA = 2 C Negligible Power in Output Driver Derate above 2 C OUTPUT DRIVER GlobalOptoisolator PD 20. mw mw/ C Off State Output Terminal Voltage VDRM 20 Volts Peak Repetitive Surge Current (PW = 00 µs, 20 pps) Total Power TA = 2 C Derate above 2 C ITSM A PD 0.7 mw mw/ C [IFT = ma Max] [IFT = 0 ma Max] [IFT = ma Max] *Motorola Preferred Device STYLE PLASTIC STANDARD THRU HOLE CASE 70A 0 COUPLER SCHEMATIC 2 ZERO CROSSING CIRCUIT. ANODE 2. CATHODE. NC. MAIN TERMINAL. SUBSTRATE. DO NOT CONNECT. MAIN TERMINAL TOTAL DEVICE Isolation Surge Voltage() (Peak ac Voltage, 0 Hz, Second Duration) Total Power TA = 2 C Derate above 2 C VISO 700 Vac(pk) PD mw mw/ C Junction Temperature Range TJ 0 to +00 C Ambient Operating Temperature Range(2) TA 0 to +8 C Storage Temperature Range(2) Tstg 0 to +0 C Soldering Temperature (0 s) TL 20 C. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating.. For this test, Pins and 2 are common, and Pins, and are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. (Replaces MOC00/D) Motorola, Inc. Optoelectronics 99 Device Data
2 I ELECTRICAL CHARACTERISTICS (TA = 2 C unless otherwise noted) INPUT LED Reverse Leakage Current (VR = V) Characteristic Symbol Min Typ Max Unit IR µa Forward Voltage (IF = 0 ma) OUTPUT DETECTOR (IF = 0 unless otherwise noted) Leakage with LED Off, Either Direction (Rated VDRM () ) Peak On State Voltage, Either Direction (ITM = 00 ma Peak) VF.. Volts IDRM 0 00 na VTM.8 Volts Critical Rate of Rise of Off State Voltage dv/dt V/µs COUPLED LED Trigger Current, Current Required to Latch Output (Main Terminal Voltage = V(2)) MOC0 MOC02 MOC0 Holding Current, Either Direction IH 20 µa Isolation Voltage (f = 0 Hz, t = sec) VISO 700 Vac(pk) IFT 0 ma ZERO CROSSING Inhibit Voltage (IF = Rated IFT, MT MT2 Voltage above which device will not trigger.) Leakage in Inhibited State (IF = Rated IFT, Rated VDRM, Off State) VIH 20 Volts IDRM2 00 µa. Test voltage must be applied within dv/dt rating. 2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max 2. IFT ( ma for MOC0, 0 ma for MOC02, ma for MOC0) and absolute max IF (0 ma). TYPICAL ELECTRICAL CHARACTERISTICS TA = 2 C TM, ON-STATE CURRENT (ma) OUTPUT PULSE WIDTH 80 µs IF = 0 ma f = 0 Hz TA = 2 C NORMALIZED IFT NORMALIZED TO TA = 2 C VTM, ON STATE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE ( C) 00 Figure. On State Characteristics Figure 2. Trigger Current versus Temperature 2 Motorola Optoelectronics Device Data
3 I I 00. DRM, PEAK BLOCKING CURRENT (na) IF = TA, AMBIENT TEMPERATURE ( C) DRM2, NORMALIZED IF = RATED IFT TA, AMBIENT TEMPERATURE ( C) Figure. IDRM, Peak Blocking Current versus Temperature Figure. IDRM2, Leakage in Inhibit State versus Temperature I FT, NORMALIZED LED TRIGGER CURRENT NORMALIZED TO: PWin 00 µs TA = 2 C PWin, LED TRIGGER WIDTH (µs) Figure. LED Current Required to Trigger versus LED Pulse Width Vdc PULSE INPUT MERCURY WETTED RELAY RTEST CTEST D.U.T. R = 0 kω X00 SCOPE PROBE. The mercury wetted relay provides a high speed repeated pulse to the D.U.T x scope probes are used, to allow high speeds and voltages.. The worst case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable RTEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. RC is measured at this point and recorded. APPLIED VOLTAGE WAVEFORM 8 V Vmax = 20 V 0 VOLTS dv dt 0. V max RC 8 RC RC Figure. Static dv/dt Test Circuit Motorola Optoelectronics Device Data
4 VCC Rin 2 MOC0/ 02/0 k 80 Ω LOAD HOT VAC NEUTRAL * For highly inductive loads (power factor < 0.), change this value to 0 ohms. Typical circuit for use when hot line switching is required. In this circuit the hot side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the part, ma for the MOC0, 0 ma for the MOC02, or ma for the MOC0. The 9 ohm resistor and 0.0 µf capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. Figure 7. Hot Line Switching Application Circuit VAC VCC Rin 2 MOC0/ 02/0 R D 80 Ω SCR SCR Suggested method of firing two, back to back SCR s, with a Motorola triac driver. Diodes can be N00; resistors, R and R2, are optional k ohm. NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. R2 D2 LOAD Figure 8. Inverse Parallel SCR Driver Circuit Motorola Optoelectronics Device Data
5 PACKAGE DIMENSIONS A B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH.. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. T SEATING PLANE F PL E PL N C L K G M D PL 0. (0.00) M T A M B M J PL 0. (0.00) M T B M A M INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC 2. BSC J K L 0.00 BSC 7.2 BSC M 0 0 N STYLE : PIN. ANODE 2. CATHODE. NC. MAIN TERMINAL. SUBSTRATE. MAIN TERMINAL CASE 70A 0 ISSUE G A B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH. F PL E PL G H D PL C L K PL 0. (0.00) M T A M B M J T SEATING PLANE 0. (0.00) M T B M A M CASE 70C 0 ISSUE D INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC 2. BSC H J K L 0.20 BSC 8. BSC S *Consult factory for leadform option availability Motorola Optoelectronics Device Data
6 F PL T SEATING PLANE A B N L C G K D PL J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH.. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 0.00 BSC 2. BSC J K L N E PL 0. (0.00) M T A M B M *Consult factory for leadform option availability CASE 70D 0 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 2092; Phoenix, Arizona F Seibu Butsuryu Center, 2 Tatsumi Koto Ku, Tokyo, Japan MFAX: RMFAX0@ .sps.mot.com TOUCHTONE (02) 2 09 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Optoelectronics MOC0/D Device Data
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Dual Line CAN Bus Protector The SZ/NUP215L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides
MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m
MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR
Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
Optocoupler, Phototransistor Output, with Base Connection
CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM
MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200
MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS
Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150
TIC225 SERIES SILICON TRIACS
Copyright 200, Power Innovations Limited, UK JULY 975 - REVISED MARCH 200 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT
Bipolar Linear/I 2 L TELEPHONE TONE RINGER BIPOLAR LINEAR/I2L
Order this document by M0/D Bipolar Linear/I L omplete Telephone Bell Replacement ircuit with Minimum External omponents On hip Diode Bridge and Transient Protection Direct Drive for Piezoelectric Transducers
MECL PLL COMPONENTS 64/65, 128/129 DUAL MODULUS PRESCALER
Order this document by M1222LVA/ The M1222LVA can be used with MOS synthesizers requiring positive edges to trigger internal counters such as Motorola s M145XXX series in a PLL to provide tuning signals
DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
MC14175B/D. Quad Type D Flip-Flop
Quad Type D Flip-Flop The MC475B quad type D flipflop is cotructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each of the four flipflops is positiveedge triggered
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
NE592 Video Amplifier
Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming
A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no
Schematic Mechanical Drawing Derating Curve. Input. Output. Product Catalogue
Input 1 Product Catalogue Single Phase SSR (24VAC) 1 ~ 4 Amps : DC Control, : Triac output 42.5 Series : 1 J/K 3 Input (+) & 4 Input (-) 1 & 2 35.6 25.5 57.75 28. 45. A = 3.2 C/W B = 1. C/W C & D =.5 C/W
NS3L500. 3.3V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch
3.3V, 8-Channel, : Gigabit Ethernet LAN Switch with LED Switch The NS3L500 is a 8 channel : LAN switch with 3 additional built in SPDT switches for LED routing. This switch is ideal for Gigabit LAN applications
MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer
-of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
AND8008/D. Solid State Control Solutions for Three Phase 1 HP Motor APPLICATION NOTE
Solid State Control Solutions for Three Phase 1 HP Motor APPLICATION NOTE INTRODUCTION In all kinds of manufacturing, it is very common to have equipment that has three phase motors for doing different
1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
TLP521 1,TLP521 2,TLP521 4
TLP2,TLP2 2,TLP2 4 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP2,TLP2 2,TLP2 4 Programmable Controllers AC/DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP2, 2 and 4 consist of a photo
Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5500.
Freescale Semiconductor Integrated Silicon Pressure Sensor + On-Chip Signal Conditioned, Temperature Compensated and Calibrated Series Pressure Rev 7, 09/2009 0 to 500 kpa (0 to 72.5 psi) 0.2 to 4.7 V
How To Write A Circuit Imprim\U00E9
Réalisation de circuits imprimés EXTRA1 1996 / 2002 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg).
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
DN05034/D. Enhanced PWM LED Dimming DESIGN NOTE
Enhanced PWM LED Dimming Circuit Description The NCL30051LEDGEVB LED driver evaluation board provides PWM dimming capability via gating the resonant half bridge converter on and off at the PWM rate. Effective
STF202-22. USB Filter with ESD Protection
STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, ellular phones,
PINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Freescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 00 Order this document by AN8/D by: Eric Jacobsen and Jeff Baum Systems Engineering Group Sensor Products Division Motorola
SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
