3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.
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1 Rev September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices in a mixed 3.3 and 5 V environment. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall time. 2. Features 3. Ordering information This device is fully specified for partial power-down applications using I OFF. The I OFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. Wide supply voltage range from 1.65 to 5.5 V High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8/JESD36 (2.7 V to 3.6 V) ±24 m output drive (V CC = 3.0 V) Latch-up performance exceeds 250 m CMOS low power consumption Direct interface with TTL levels Inputs accept voltages up to 5 V ESD protection: HM EI/JESD22-114E exceeds 2000 V MM EI/JESD exceeds 200 V. SOT363 and SOT457 package Specified from 40 to +85 C and 40 to +125 C. Table 1. Ordering information Type number Package Temperature range Name Description Version GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 GV 40 C to +125 C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
2 4. Marking Table 2. Marking Type number GW GV Marking code YH YH 5. Functional diagram C Y mnb = 1 mnb145 4 Fig 1. Logic symbol Fig 2. IEC logic symbol Y C mnb144 Fig 3. Logic diagram 6. Pinning information 6.1 Pinning 1 6 C GND 2 5 V CC 3 4 Y 001aag920 Fig 4. Pin configuration _2 Product data sheet Rev September of 12
3 6.2 Pin description Table 3. Pin description Symbol Pin Description 1 data input GND 2 ground (0 V) 3 data input Y 4 data output V CC 5 supply voltage C 6 data input 7. Functional description Table 4. Function table [1] Input Output C Y L L L L L L H H L H L H L H H L H L L H H L H L H H L L H H H H [1] H = HIGH voltage level; L = LOW voltage level 8. Limiting values Table 5. Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage V I IK input clamping current V I < 0 V 50 - m V I input voltage [1] V I OK output clamping current V O > V CC or V O < 0 V - ±50 m V O output voltage ctive mode [1][2] 0.5 V CC V Power-down mode [1][2] V I O output current V O = 0 V to V CC - ±50 m I CC supply current m I GND ground current m P tot total power dissipation T amb = 40 C to +125 C [3] mw T stg storage temperature C [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. _2 Product data sheet Rev September of 12
4 [2] When V CC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For SC-74 and SC-88 packages: above 87.5 C the value of P tot derates linearly with 4.0 mw/k. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit V CC supply voltage V V I input voltage V V O output voltage ctive mode 0 - V CC V O V CC = 0 V; Power-down mode V O T amb ambient temperature C t/ V input transition rise and fall rate V CC = 1.65 V to 2.7 V ns/v V CC = 2.7 V to 5.5 V ns/v 10. Static characteristics Table 7. Static characteristics t recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ [1] Max Unit T amb = 40 C to +85 C V IH HIGH-level input voltage V CC = 1.65 V to 1.95 V 0.65 V CC - - V V CC = 2.3 V to 2.7 V V V CC = 2.7 V to 3.6 V V V CC = 4.5 V to 5.5 V 0.7 V CC - - V V IL LOW-level input voltage V CC = 1.65 V to 1.95 V V CC V V CC = 2.3 V to 2.7 V V V CC = 2.7 V to 3.6 V V V CC = 4.5 V to 5.5 V V CC V V OH HIGH-level output voltage V I =V IH or V IL I O = 100 µ; V CC = 1.65 V to 5.5 V V CC V I O = 4 m; V CC = 1.65 V V I O = 8 m; V CC = 2.3 V V I O = 12 m; V CC = 2.7 V V I O = 24 m; V CC = 3.0 V V I O = 32 m; V CC = 4.5 V V V OL LOW-level output voltage V I =V IH or V IL I O = 100 µ; V CC = 1.65 V to 5.5 V V I O = 4 m; V CC = 1.65 V V I O = 8 m; V CC = 2.3 V V I O = 12 m; V CC = 2.7 V V I O = 24 m; V CC = 3.0 V V I O = 32 m; V CC = 4.5 V V I I input leakage current V CC = 0 V to 5.5 V; V I = 5.5 V or GND - ±0.1 ±5 µ _2 Product data sheet Rev September of 12
5 Table 7. Static characteristics continued t recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ [1] Max Unit I OFF power-off leakage current V CC = 0 V; V I or V O = 5.5 V - ±0.1 ±10 µ I CC supply current V I = 5.5 V or GND; µ V CC = 1.65 V to 5.5 V; I O =0 I CC additional supply current per pin; V CC = 2.3 V to 5.5 V; µ V I =V CC 0.6 V; I O =0 C I input capacitance V CC = 3.3 V; V I = GND to V CC pf T amb = 40 C to +125 C V IH HIGH-level input voltage V CC = 1.65 V to 1.95 V 0.65 V CC - - V V CC = 2.3 V to 2.7 V V V CC = 2.7 V to 3.6 V V V CC = 4.5 V to 5.5 V 0.7 V CC - - V V IL LOW-level input voltage V CC = 1.65 V to 1.95 V V CC V V CC = 2.3 V to 2.7 V V V CC = 2.7 V to 3.6 V V V CC = 4.5 V to 5.5 V V CC V V OH HIGH-level output voltage V I =V IH or V IL I O = 100 µ; V CC = 1.65 V to 5.5 V V CC V I O = 4 m; V CC = 1.65 V V I O = 8 m; V CC = 2.3 V V I O = 12 m; V CC = 2.7 V V I O = 24 m; V CC = 3.0 V V I O = 32 m; V CC = 4.5 V V V OL LOW-level output voltage V I =V IH or V IL I O = 100 µ; V CC = 1.65 V to 5.5 V V I O = 4 m; V CC = 1.65 V V I O = 8 m; V CC = 2.3 V V I O = 12 m; V CC = 2.7 V V I O = 24 m; V CC = 3.0 V V I O = 32 m; V CC = 4.5 V V I I input leakage current V CC = 0 V to 5.5 V; V I = 5.5 V or GND - - ±100 µ I OFF power-off leakage current V CC = 0 V; V I or V O = 5.5 V - - ±200 µ I CC supply current V I = 5.5 V or GND; µ V CC = 1.65 V to 5.5 V; I O =0 I CC additional supply current per pin; V CC = 2.3 V to 5.5 V; V I =V CC 0.6 V; I O = µ [1] ll typical values are measured at V CC = 3.3 V and T amb =25 C. _2 Product data sheet Rev September of 12
6 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 6. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit t pd propagation delay,, C to Y; see Figure 5 [2] C PD power dissipation capacitance [1] Typical values are measured at T amb =25 C and V CC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] t pd is the same as t PLH and t PHL. [3] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. 12. C waveforms Min Typ [1] Max Min Max V CC = 1.65 V to 1.95 V ns V CC = 2.3 V to 2.7 V ns V CC = 2.7 V ns V CC = 3.0 V to 3.6 V ns V CC = 4.5 V to 5.5 V ns V I = GND to V CC ; V CC = 3.3 V [3] pf,, C input V I GND V M t PHL t PLH Y output in phase V OH V OL V M Y output out of phase V OH V OL V M t PLH t PHL mnb147 Fig 5. Measurement points are given in Table 9. V OL and V OH are typical output voltage levels that occur with the output load. Input,, C to output Y propagation delays _2 Product data sheet Rev September of 12
7 Table 9. Measurement points V CC V M Input V I t r = t f 1.65 V to 1.95 V 0.5 V CC V CC 2.0 ns 2.3 V to 2.7 V 0.5 V CC V CC 2.0 ns 2.7 V 1.5 V 2.7 V 2.5 ns 3.0 V to 3.6 V 1.5 V 2.7 V 2.5 ns 4.5 V to 5.5 V 0.5 V CC V CC 2.5 ns V CC V EXT G V I DUT V O RL RT CL RL mna616 Fig 6. Test data is given in Table 10. Definitions for test circuit: R L = Load resistance. C L = Load capacitance including jig and probe capacitance. R T = Termination resistance should be equal to the output impedance Z o of the pulse generator. V EXT = External voltage for measuring switching times. Load circuitry for switching times Table 10. Test data Supply voltage Input Load V EXT V CC V I C L R L t PLH, t PHL 1.65 V to 1.95 V V CC 30 pf 1 kω open 2.3 V to 2.7 V V CC 30 pf 500 Ω open 2.7 V 2.7 V 50 pf 500 Ω open 3.0 V to 3.6 V 2.7 V 50 pf 500 Ω open 4.5 V to 5.5 V V CC 50 pf 500 Ω open _2 Product data sheet Rev September of 12
8 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D E X y H E v M Q pin 1 index c e1 bp w M Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 max mm bp c D E e e 1 H E L p Q v w y OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT363 SC Fig 7. Package outline SOT363 (SC-88) _2 Product data sheet Rev September of 12
9 Plastic surface-mounted package (TSOP6); 6 leads SOT457 D E X y H E v M Q pin 1 index c Lp e bp w M detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 bp c D E e H E L p Q v w y mm OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT457 SC Fig 8. Package outline SOT457 (SC-74) _2 Product data sheet Rev September of 12
10 14. bbreviations Table 11. cronym CMOS DUT ESD HM MM TTL bbreviations Description Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human ody Model Machine Model Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes _ Product data sheet - _1 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. In Section 10 Static characteristics, changed conditions for input leakage and supply current. _ Product specification - _2 Product data sheet Rev September of 12
11 16. Legal information 16.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet short data sheet is an extract from a full data sheet with the same product type number(s) and title. short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights Trademarks Notice: ll referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: For sales office addresses, send an to: _2 Product data sheet Rev September of 12
12 18. Contents 1 General description Features Ordering information Marking Functional diagram Pinning information Pinning Pin description Functional description Limiting values Recommended operating conditions Static characteristics Dynamic characteristics C waveforms Package outline bbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: Date of release: 3 September 2007 Document identifier: _2
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Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
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74HC4066; 74HCT4066. Quad single-pole single-throw analog switch
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PRTR5V0U2F; PRTR5V0U2K
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PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
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BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
SiGe:C Low Noise High Linearity Amplifier
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Schottky barrier quadruple diode
Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated
IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.
SOT457 Rev. 5 8 July 2011 Product data sheet 1. Product profile 1.1 General description The is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface
74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer
Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver.
Rev. 8 15 March 2012 Product data sheet 1. General description The is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The is a 16-bit
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
Planar PIN diode in a SOD323 very small plastic SMD package.
Rev. 8 12 May 2015 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
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The sensor can be operated at any frequency between DC and 1 MHz.
Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor
BAS70 series; 1PS7xSB70 series
BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package
INTEGRATED CIRCUITS. 74F153 Dual 4-line to 1-line multiplexer. Product specification 1996 Jan 05 IC15 Data Handbook
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BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
High-speed USB 2.0 switch with enable
Rev. 4 9 June 03 Product data sheet. General description The is a high-bandwidth switch designed for the switching of high-speed UB.0 signals in handset and consumer applications. These applications could
74HC4051; 74HCT4051. 8-channel analog multiplexer/demultiplexer
Rev. 8 5 February 2016 Product data sheet 1. General description The is a single-pole octal-throw analog switch (SP8T) suitable for use in analog or digital 8:1 multiplexer/demultiplexer applications.
Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
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DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 2003 Apr 01 2004 Mar 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ±2% and approx. ±5% Working voltage range: nominal 2.4
74F257A Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State)
INTEGRATED CIRCUITS Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State) 1995 Mar 31 IC15 Data Handbook Philips Semiconductors Quad 2-line to 1-line selector/multiplexer, non-inverting (3-State)
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Supersedes data of 2004 Mar 26 2004 Jun 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ± 2 % and ± 5 % Working voltage range: nominal 2.4
BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.
Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA
DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6
LIN-bus ESD protection diode
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MM74HC14 Hex Inverting Schmitt Trigger
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INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14
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Femtofarad bidirectional ESD protection diode
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MM74HC273 Octal D-Type Flip-Flops with Clear
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DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
MM74HC174 Hex D-Type Flip-Flops with Clear
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HCF4070B QUAD EXCLUSIVE OR GATE
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