SILICON TRANSISTOR 2SC3355

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1 DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (4 MAX.) FEATURES Low Noise and High Gain NF = 1.1 db TYP., Ga = 8. db IC = 7 ma, f = 1. GHz NF = 1.1 db TYP., Ga = 9. db IC = 4 ma, f = 1. GHz High Power Gain MAG = 11 db IC = 2 ma, f = 1. GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 2 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3. V Collector Current IC ma Total Power Dissipation PT 6 mw Junction Temperature Tj 15 C Storage Temperature Tstg 65 to +15 C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1. A VCB = V, IE = Emitter Cutoff Current IEBO 1. A VEB = 1. V, IC = DC Current Gain hfe , IC = 2 ma Gain Bandwidth Product ft 6.5 GHz, IC = 2 ma Output Capacitance Cob pf VCB = V, IE =, f = 1. MHz Insertion Power Gain S21e db, IC = 2 ma, f = 1. GHz Noise Figure NF 1.1 db, IC = 7 ma, f = 1. GHz Noise Figure NF db, IC = 4 ma, f = 1. GHz hfe Classification 1.27 (.5) Base 2. Emitter 3. Collector 2.54 (.1).5 (.2) 1.77 MAX. (.69 MAX.) 5.5 MAX. (16 MAX.) 14 MIN. (.551 MIN.) 4.2 MAX. (.165 MAX.) EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 Class Marking K K hfe 5 to 3 Document No. P355EJ3V1DS (3rd edition) Date Published March 1997 N Printed in Japan 1985

2 TYPICAL CHARACTERISTICS (TA = 25 C) PT-Total Power Dissipation-mW 5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free air With heat sink 3.8 heat sink Cre-Feed-back Capacitance-pF FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1. MHz 5 15 TA-Ambient Temperature- C VCB-Collector to Base Voltage-V 2 DC CURRENT GAIN vs. 15 INSERTION GAIN vs. f = 1. GHz hfe-dc Current Gain 5 2 S21e 2 -Insertion Gain-dB GAIN BANDWIDTH PROUDCT vs. INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax ft-gain Bandwidth Product-GHz Gmax-Maximum Gain-dB S21e 2 -Insertion Gain-dB 2 IC = 2 ma S21e f-frequency-ghz 2

3 NF-Noise Figure-dB NOISE FIGURE vs. f = 1. GHz IM2, IM3 (db) INTERMODULATIOn DISTORTION vs. IM3 IM at V + db µ V/5 Ω Rg = Re = 5 Ω 3 IM2 IM3 f = 9 + MHz f = MHz S-PARAMETER, IC = 2 ma, ZO = 5 f (MHz) S11 S11 S21 S21 S12 S12 S22 S , IC = 4 ma, ZO = 5 f (MHz) S11 S11 S21 S21 S12 S12 S22 S

4 SC3355 S-PARAMETER S11e, S22e-FREQUENCY CONDITION WAVELENGTHS TOWARD GENERATOR IN DEGREES ANGLE OF REFLECTION COEFFCIENT 16 WAVELENGTHS TOWARD LOAD ZO ) ( +JX POSITIVE REACTANCE COMPONENT.3 ZO ) ( JX REACTANCE COMPONENT ( R GHz IC = 2 ma ZO ) S11e GHz IC = 4 ma IC = 4 ma GHz GHz.8 1. IC = 2 ma S22e NEGATIVE REACTANCE COMPONENT S21e-FREQUENCY CONDITION IC = 4 ma S12e-FREQUENCY CONDITION IC = 4 ma GHz S12e 3 S21e 2. GHz GHz GHz

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8 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M

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