Inverter Grade Thyristors (Stud Version), 300 A

Transcription

1 Inverter Grade Thyristors (Stud Version), 300 A TO- 209AE (TO-118) PRODUCT SUMMARY I T(AV) 300 A V DRM /V RRM V, 1 V V TM 2.16 V I TSM at 3000 A I TSM at 60 Hz 3150 A I GT ma T J -40 C to 125 C Package TO-209AE (TO-118) Diode variation Single SCR FEATURES Center amplifying gate High surge current capability Low thermal impedance High speed performance Compression bonding Designed and qualified for industrial level Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Inverters Choppers Induction heating All types of force-commutated converters T(AV) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS T C 65 C I 300 A I T(RMS) 471 I TSM 60 Hz A 316 I 2 t 60 Hz 288 ka 2 s V DRM /V RRM to 1 V t q 10/20 μs T J -40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST303S VOLTAGE CODE V DRM /V RRM, MAXIMUM REPETITIVE PEAK VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V I DRM /I RRM MAXIMUM AT T J = T J MAXIMUM ma 50 Revision: 08-Jul-14 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 CURRENT CARRYING CAPABILITY FREQUENCY I TM I TM I TM UNITS 180 el 180 el µs Hz A 0 Hz Hz Recovery voltage V R V Voltage before turn-on V D V DRM V DRM V DRM Rise of on-state current di/dt A/μs Case temperature C Equivalent values for RC circuit 10/ / /0.47 μf ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current 300 A I at case temperature T(AV) 180 conduction, half sine wave 65 C Maximum RMS on-state current I T(RMS) DC at 45 C case temperature 471 t = 10 ms No voltage 7950 Maximum peak, one half cycle, t = 8.3 ms reapplied 8320 A I non-repetitive surge current TSM t = 10 ms % V RRM 6690 t = 8.3 ms reapplied Sinusoidal half wave, 7000 t = 10 ms No voltage initial T J = T J maximum 316 Maximum I 2 t for fusing I 2 t t = 8.3 ms reapplied 288 t = 10 ms % V RRM 224 ka 2 s t = 8.3 ms reapplied 204 Maximum I 2 t for fusing I 2 t t = 0.1 ms to 10 ms, no voltage reapplied 3160 ka 2 s Maximum peak on-state voltage V TM I TM = 1255 A, T J = T J maximum, t p = 10 ms sine wave pulse 2.16 Low level value of threshold voltage V T(TO)1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 1.44 V High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum 1.46 Low level value of forward slope resistance r t1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.57 High level value of forward slope m r resistance t2 (I > x I T(AV) ), T J = T J maximum 0.56 Maximum holding current I H T J = 25 C, I T > 30 A 600 Typical latching current I L T J = 25 C, V A = 12 V, R a = 6, I G = 1 A 0 ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current di/dt T J = T J maximum, V DRM = Rated V DRM I TM = 2 x di/dt T Typical delay time t J = 25 C, V DM = Rated V DRM, I TM = 50 A DC, t p = 1 μs d Resistive load, gate pulse: 10 V, 5 source 0.80 minimum T J = T J maximum, 10 Maximum turn-off time maximum t q I TM = 550 A, commutating di/dt = 40 A/μs V R = 50 V, t p = μs, dv/dt = V/μs 20 0 A/μs μs Revision: 08-Jul-14 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current dv/dt T J = T J maximum, linear to 80 % V DRM, higher value available on request V/μs I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 50 ma TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM 60 T J = T J maximum, f =, d% = 50 Maximum average gate power P G(AV) 10 W Maximum peak positive gate current I GM 10 A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms 20 Maximum peak negative gate voltage -V GM 5 V Maximum DC gate currrent required to trigger I GT ma T J = 25 C, V A = 12 V, R a = 6 Maximum DC gate voltage required to trigger V GT 3 V Maximum DC gate current not to trigger I GD 20 ma T J = T J maximum, rated V DRM applied Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J -40 to 125 Maximum storage temperature range T Stg -40 to 150 C Maximum thermal resistance, junction to case R thjc DC operation 0.10 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.03 K/W Mounting force, ± 10 % Non-lubricated threads 48.5 (425) N m (lbf in) Approximate weight 535 g Case style See dimensions - link at the end of datasheet TO-209AE (TO-118) R thj-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS T J = T J maximum Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC K/W Revision: 08-Jul-14 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 Maximum Allowable Case Temperature ( C) ST303S Series R (DC) = 0.10 K/ W thjc 30 Conduction Angle Average On-state Current (A) DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Allowable Case Temperature ( C) R (DC) = 0.10 K/ W thjc Conduction Period Average On-state Current (A) Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle ST303S Series T = 125 C J 0.06 K/ W 0.08 K/ W 0.12 K/W 0.16 K/W 0.2 K/ W 0.3 K/W 0.5 K/ W 0.03 K/W R = 0.01 K/ W - Delta R thsa Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) DC RMS Limit Conduction Period ST303S Serie s T = 125 C J R = 0.01 K/ W - Delta R Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) thsa 0.03 K/ W 0.06 K/ W 0.12 K/ W 0.2 K/ W 0.3 K/W 0.5 K/ W Fig. 4 - On-State Power Loss Characteristics Revision: 08-Jul-14 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM Initial T J= Hz s ST303S Se ries Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thjc (K/W) Steady State Value R thjc = 0.10 K/ W (DC Operation) ST303S Se ries Sq ua re Wa ve Pulse Dura t ion (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125 C No Voltage Reapplied Rated V Reapplied RRM Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Maximum Reverse Recovery Charge - Qrr (µc) 320 I = A TM A 280 A A A ST303S Series 140 T J= 125 C Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics Instantaneous On-state Current (A) 00 0 T = 25 C J T = 125 C J ST303S Serie s Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Maximum Reverse Recovery Current - Irr (A) I = A TM 300 A A A 50 A T = 125 C J Rate Of Fall Of On-state Current - di/dt (A/µs) Fig Reverse Recovery Current Characteristics Revision: 08-Jul-14 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 1E4 Peak On-state Current (A) 1E3 1E E1 R s = 10 ohms ST303S Series Sinusoidal pulse T = 40 C C Fig Frequency Characteristics 1 0 R s = 10 ohms Sinusoidal pulse T = 65 C C 1E4 Peak On-state Current (A) 1E3 1E2 0 1 R s = 10 ohms 0 2 1E1 Trapezoidal pulse T C = 40 C di/dt = 50A/µs 1E R s = 10 o hms Trapezoidal pulse T C = 65 C di/dt = 50A/µs Fig Frequency Characteristics 1E4 Peak On-state Current (A) 1E E2 R s = 10 o hms 0 1E1 2 Trapezoidal pulse T C = 40 C di/dt = A/ µs 1E0 0 1 R s = 10 ohms 0 ST303S Series Trapezoidal pulse T C = 65 C di/dt = A/ µs Fig Frequency Characteristics Revision: 08-Jul-14 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Peak On-state Current (A) 1E5 1E4 1E3 1E joules per pulse ST303S Se ries Sinusoidal pulse 1E1 Pulse Basew id th (µs) Fig Maximum On-State Energy Power Loss Characteristics Rectangular pulse di/dt = 50A/µs joules per pulse Inst a nt a neo us Ga t e Volta g e (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms tr<=1 µs VGD Tj=125 C (b) Tj=25 C IGD Device: ST303S Series Frequency Limited by PG(AV) Tj=-40 C (a) Instantaneous Gate Current (A) (1) PGM = 10W, = 20ms (2) PGM = 20W, = 10ms (3) PGM = 40W, = 5ms (4) PGM = 60W, = 3.3ms (1) (2) (3) (4) Fig Gate Characteristics Revision: 08-Jul-14 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 ORDERING INFORMATION TABLE Device code VS- ST 30 3 S 12 P F K 0 P product Thyristor - Essential part number - 3 = Fast turn-off - S = Compression bonding stud - Voltage code x = V RRM (see Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A - Reapplied dv/dt code (for t q test condition) - t q code - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 11 - None = Standard production - P = Lead (Pb)-free dv/dt - t q combinations available dv/dt (V/µs) t q (µs) 10 FN up to 800 V 20 FK t q (µs) only for 0/1 V 20 FK Dimensions LINKS TO RELATED DOCUMENTS Revision: 08-Jul-14 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Outline Dimensions TO-209AE (TO-118) DIMENSIONS in millimeters (inches) Ceramic housing 22 (0.87) MAX. 4.3 (0.17) DIA (0.41) NOM. White gate Red silicon rubber 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. Red shrink Red cathode White shrink 245 (9.65) ± 10 (0.39) 27.5 (1.08) MAX. SW (0.82) MAX. 47 (1.85) MAX. 49 (1.92) MAX. 3/4"16 UNF-2A (1) Flexible leads C.S. 50 mm 2 (0.078 s.i.) 4.5 (0.18) MAX. 9.5 (0.37) MIN. 22 (0.86) MIN. Fast-on terminals AMP REF-250 Note (1) For metric device: M24 x length 21 (0.83) maximum Document Number: For technical questions, contact: indmodules@vishay.com Revision: 02-Aug-07 1

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