BTA40, BTA41 and BTB41 Series

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1 BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... RD91 (BTA4) Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 25V RMS ) complying with UL standards (File ref.: E81734). TOP3 Insulated (BTA41) Table 2: Order Codes Part Number BTA4-xxxB BTA41-xxxBR BTB41-xxxBR TOP3 (BTB41) Marking See table 8 on page 6 October 25 REV. 7 1/7

2 Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) RD91 / TOP3 T c = 95 C TOP Ins. T c = 8 C 4 A Non repetitive surge peak on-state F = 5 Hz t = 2 ms 4 current (full cycle, T j initial = 25 C) A F = 6 Hz t = 16.7 ms 42 I ² t I ² t Value for fusing t p = 1 ms 88 A ² s di/dt V DSM /V RSM Critical rate of rise of on-state current I = 2 x I T, t r 1 ns Non repetitive surge peak off-state voltage F = 12 Hz T j = 125 C 5 A/µs t p = 1 ms T j = 25 C V DSM /V RSM + 1 I M Peak gate current t p = 2 µs T j = 125 C 8 A P (AV) Average gate power dissipation T j = 125 C 1 W V T stg T j Storage junction temperature range Operating junction temperature range - 4 to to C Tables 4: Electrical Characteristics (T j = 25 C, unless otherwise specified) Symbol Test Conditions Quadrant Value Unit I - II - III 5 I T (1) MAX. ma V D = 12 V R L = 33 Ω IV 1 V T ALL MAX. 1.3 V V D V D = V DRM R L = 3.3 kω T j = 125 C ALL MIN..2 V I H (2) I T = 5 ma MAX. 8 ma I - III - IV 7 I L I = 1.2 I T MAX. ma II 16 dv/dt (2) V D = 67 %V DRM gate open T j = 125 C MIN. 5 V/µs (dv/dt)c (2) (di/dt)c = 2 A/ms T j = 125 C MIN. 1 V/µs Table 5: Static Characteristics Symbol Test Conditions Value Unit V T (2) I TM = 6 A t p = 38 µs T j = 25 C MAX V V t (2) Threshold voltage T j = 125 C MAX..85 V R d (2) Dynamic resistance T j = 125 C MAX. 1 mω I DRM T j = 25 C 5 µa V I DRM = V RRM MAX. RRM T j = 125 C 5 ma Note 1: minimum I T is guaranted at 5% of I T max. Note 2: for both polarities of referenced to. 2/7

3 Table 6: Thermal resistance Symbol Parameter Value Unit R th(j-c) RD91 (Insulated) / TOP3.9 Junction to case (AC) C/W TOP3 Insulated.6 R th(j-a) Junction to ambient TOP3 / TOP3 Insulated 5 C/W S = Copper surface under tab. Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) 5 P(W) 45 I T(RMS) (A) 4 BTA BTA4 / BTB41 α = α α I T(RMS) (A) T ( C) C Figure 3: Relative variation of thermal impedance versus pulse duration Figure 4: On-state characteristics (maximum values) 1.E+ 1.E-1 K=[Z th/rth] Zth(j-c) Zth(j-a) BTA / BTB I TM(A) Tj max. V to =.85V R d = 1 mω T= j Tj max. T j = 25 C. 1.E E-3 t (s) p 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 V TM(V) /7

4 Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < 1 ms and corresponding value of I 2 t I TSM(A) Non repetitive Tj initial=25 C t=2ms One cycle I TSM(A), I t (A s) di/dt limitation: 5A/µs ITSM Tj initial=25 C 2 I t Repetitive T C=7 C 5 Number of cycles t p(ms) Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 8: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) 2.5 I T,I H,I L[T] j / I T,I H,I L[T j=25 C] 2. (di/dt)c [(dv/dt)c] / Specified (di/dt)c 2. IT IH & IL T j( C) (dv/dt)c (V/µs) Figure 9: Relative variation of critical rate of decrease of main current versus (dv/dt)c 6 (di/dt)c [T j ] / (di/dt)c [T j specified] T j( C) /7

5 Figure 1: Ordering Information Scheme BT A 4-6 B R Triac series Insulation A = insulated B = non insulated Current 4 = 4A in RD91 41 = 4A in TOP3 Voltage 6 = 6V 8 = 8V Sensitivity and type B = 5mA Standard Packing mode R = Tube Blank = Bulk Table 7: Product Selector Part Numbers Voltage (xxx) 6 V 8 V Sensitivity Type Package BTA4-xxxB X X 5 ma Standard RD91 BTA41-xxxBR X X 5 ma Standard TOP3 Ins. BTB41-xxxBR X X 5 ma Standard TOP3 BTB: non insulated TOP3 package Figure 11: TOP3 (Insulated and non insulated) Package Mechanical Data DIMENSIONS H A R B ØL K F P C D J J E REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F H J K ØL P R /7

6 Figure 12: RD91 Package Mechanical Data L2 L1 B2 C B1 C2 C1 N2 N1 B F E3 I A DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A B B B C C C E F I L L N N In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA4-xxxB BTA4xxxB RD91 2 g 25 Bulk BTA41-xxxBR BTA41xxxB TOP3 Ins. 4.5 g 3 Tube BTB41-xxxBR BTB41xxxB TOP3 4.5 g 3 Tube Note: xxx = voltage Table 9: Revision History Date Revision Description of Changes Sep-23 5 Last update. 25-Mar-25 6 TOP3 delivery mode changed from bulk to tube. 14-Oct-25 7 T c values for I T changed in Table 3. ECOPACK statement added. 6/7

7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 25 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - ermany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7

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