1. Class-A Source Follower with External Resistor Output Stage
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1 1. Class-A Source Follower with External Resistor utput Stage V (1) (3) M1 VB Vi (5) I SS I DS1 (4) () RL Vo V SS Figure 1. Class A Amplifier Class-A source follower amplifier with external resistor is shown in Figure 1. The current of transistor M1 is given by: V I DS1 ISS R L The minimum output voltage V occurs when the M1 is cutoff or I DS1 0. That is, V (min) I SS R L If one wants the minimum output voltage to swing to the negative supply rail voltage V (min) V V 5, the bias current must be selected as follows: I SS V R 5 K SS SS L.5mA The output voltage is approximately given by: V The bias voltage, V V B sin(wt), of M1 must be selected so that when the input voltage is zero the current of M1 is equal to I SS.5mA. That is, class-a Amplifier conducts all the time. It will be shown that class-a Amplifier is only 5% efficient. The efficiency of the amplifier is defined as the power delivered to the load at the signal frequency, divided by the average power supplied to the amplifier. 1
2 eff P P ac av The power delivered to the load at the signal frequency is V P ac R L V R L The average power supplied to the source follower is 1 V sin(wt) T P av ISS (V VSS ) V t ISS (V VSS ) T 0 R d L where T is the period of signal. The first term corresponds to the dc power dissipation; the second term is the ac power dissipation which average to zero over the period T. The efficiency can now be obtained. I SS V eff P P ac av V R L I V SS 0.5 or 5% The class-a amplifier is simulated. The netlist is shown below: * Class A Amplifier *Filename classa.cir VI 1 5 DC 0 sin( ) VB V 3 0 DC 5 ISS 4.5mA M N1 W1500U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE The DC output voltage transfer characteristic shows linear response for the entire input range.
3 The current at quiescent operating point is the same as the current source I SS. That is, high power dissipation at the quiescent operating point. 3
4 The transient analysis shows that with the proper choice of biasing current I SS for given a resistor load, the output voltage can swing the full power supply range. In this configuration since the source is the output node, the bulk can not be connected to the source for NMS device in an nwell process. The threshold voltage becomes dependent on the body effect. In the above simulation the effect of non-zero bulk source potential is ignored. The bulk source potential will increase the threshold voltage as shown below: V T T [ φ F VSB φ F ] VT γ VSB VT V VSS V γ γ It will be shown that the increase in the threshold voltage will decrease the maximum output voltage swing. From Figure 1 the output voltage is given by: V V - V I GS1 The maximum output occurs when the input voltage is set to maximum and gate to source voltage to minimum. That is, V (max) V - V ; since V (max) V, V (min) V T Substitute the threshold voltage and solve for the maximum output voltage, I GS1 T V (max) V Re-arranging the expression, - V T γ V - V SS γ V (max) - V SS V - V T V (max) 4
5 Squaring both sides and express as polynomial in (max) V γ (V (max) - V av (max) SS ) (V - V bv (max) c 0 T - V (max)) (V - V T ) V (max)(v - V T ) V (max) where: a 1 b -(V c (V - V - V T T ) γ / ) γ V SS Applying the quadratic formula to solve for the maximum output voltage. V (max) V ( γ / ) VT - ( γ/) γ 4(V For the circuit in Figure 1, V -V 5; V 1; γ GAMMA 1, the maximum output voltage is computed: - V SS T SS - V V (max) 5 (1 / ) 1 (1/ ) 1 4(5 ( 5) 1) This is simulated using Pspice with bulk to source voltage parameter GAMMA included. V (max).06 That is, one disadvantage of source follower is that the output voltage can not reach the positive voltage rail of V cause by high threshold due to non-zero bulk to source voltage. This is simulated by adding the bulk effect SPICE parameter of GAMMA1.0 and PHI0.6 in the netlist. * Class A Amplifier *Filename classa.cir including bulk effect VI 1 5 DC 0 sin( ) VB V 3 0 DC 5 ISS 4.5mA M NMS1 W1500U LU RL 0 K * SPICE Parameters.MDEL NMS1 NMS VT1 KP40U GAMMA1.0 PHI0.6.P.TF V() VI.TRAN 1U M.PRBE T ) 5
6 . Class-B Push-Pull Source Follower utput Stage V (3) M1 (1) () Vo Vi M RL (4) V SS Figure. Class B Amplifier Class-B amplifiers improve the efficiency of the output stage by eliminating quiescent power dissipation by operating at zero quiescent current. This is implemented in Figure. As the input voltage V i swings positive, M1 turns on when V exceeds the threshold voltage V, and the output voltage GS1 TN1 V 6
7 follows the input on the positive swing. When the input voltage V GS swings negative, M turns on when is less than threshold voltage V, and the output voltage V follows the input on the negative TP swing. There is a dead zone in the class-b voltage transfer characteristic, where both transistors are not conducting, V 0. In the dead zone, V V V V V V. That is, the dead zone is defined by: GS GS1 GS V i i i -1 V TP Vi VTN1 1 The class-b amplifier is simulated the netlist is shown below: * Class B Amplifier *Filename classb.cir VI 1 0 DC 0 sin( ) V 3 0 DC 5 M N1 W1000U LU M P1 W4000U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE The Pspice simulation shows the presence of the dead zone in the output voltage transfer characteristic. 7
8 The current in each transistor conducts for less than half cycle. M1 conducts in the positive half cycle and M in the negative half cycle. The transient analysis shows that the dead zone causes a distortion in the output waveform. 8
9 If the cross-over distortion is neglected, then the current flowing in each transistor can be approximated by a half-wave rectified sinusoid with an amplitude of approximately V / R L. Assuming V, the average power dissipated from each supply is V SS P av 1 V π T/ V sin t T d 0 R L T V t πr L The power delivered to load is the same as in class-a Amplifier. Combining the expression the efficiency is eff P P av V R L V πr L π 4 ac or 78.5% Pspice can be used to simulate distortion using transient analysis and the.fur (Fourier) statement. The syntax is:.fur FREQ V1 V V3 where: FREQ is the frequency of the fundamental V1 V V3.. are the outputs of the circuit for which Pspice will calculate distortion. * Class B Amplifier *Filename classb.cir with Fourier Analysis.FUR 1k V(1) V() 9
10 VI 1 0 DC 0 sin( ) V 3 0 DC 5 M N1 W1000U LU M P1 W4000U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 10U M 0 10U.PRBE FURIER CMPNENTS F TRANSIENT RESPNSE V(1) DC CMPNENT E-06 HARMNIC FREQUENCY FURIER NRMALIZED PHASE NRMALIZED N (HZ) CMPNENT CMPNENT (DEG) PHASE (DEG) E E E00.511E E00.000E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E01 TTAL HARMNIC DISTRTIN E-05 PERCENT FURIER CMPNENTS F TRANSIENT RESPNSE V() DC CMPNENT E-0 HARMNIC FREQUENCY FURIER NRMALIZED PHASE NRMALIZED N (HZ) CMPNENT CMPNENT (DEG) PHASE (DEG) E E E E E00.000E E E E E E E E E E E E E E E E03.003E E E E E03.419E E E E E E E E E E E E E E E E E E E0 TTAL HARMNIC DISTRTIN E01 PERCENT 10
11 3. Class-AB Amplifiers V (1A) (3) M1 VGG1 Vi (5) VGG () RL Vo (1B) M (4) V SS Figure 3. Class AB Amplifier The cross-over distortion of the class-b amplifier can be minimized by biasing the transistors into conduction but at a relatively low quiescent current compared to class-a amplifier. This amplifier is known as class-ab and its implementation is shown in Figure 3. Two biasing voltages are shown. At quiescent operating point, both node 5 and node are at ground potential. Thus VGG1and VGG are used to bias M1 and M respectively. The two voltages are used to account for the differences in the threshold voltage of the NMS and PMS transistors. Ignoring the bulk effect, to guarantee that both transistors are on at quiescent operating point (VI0), a threshold voltage of 10% beyond VT(1) is selected. That is, VGG1VGG1.1V. In the Pspice simulation, the bulk effect is ignored by excluding the parameter GAMMA in the spice parameter list or GAMMA0. The Pspice netlist of Figure 3 is shown below: * Class AB Amplifier *Filenameclassab.cir VI 5 0 DC 0 sin( ) V 3 0 DC 5 VGG1 1A 5 DC 1.1 VGG 5 1B DC 1.1 M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU RL 0 K *Spice parameter ignoring bulk effect (GAMMA0).MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE 11
12 The DC transfer characteristic of the transistors shows that there is a small bias current of 150uA at quiescent operating point (VI0). Transistor M1(M) does not conduct when the input signal VI is negative (positive). Transistor M1(M) is capable of sourcing(sinking).5ma to the load when the input signal is at the highest possible value of V(VSS). That is, class-ab amplifier provides high driving capability at low quiescent operating power. In addition, the cross-over distortion is eliminated by proper selection of bias voltages. The output voltage DC transfer characteristic shows the elimination of the cross-over distortion. 1
13 The transient response shows that the output V closely follows the input VI, when the bulk effect is ignored. It will shown later that this is not case when the bulk effect is taken into account. 13
14 V (1A) (3) M1 VGG () Vo RL Vi (1B) M (4) (5) V SS VB-VGG/ Figure 4. Class AB Implementation with one biasing supply VGG The circuit implementation will becomes simpler if the input can be moved out of the center tap position as shown in Figure 4. The two bias voltages VGG1 and VGG ignoring bulk effect are combined to VGG.. If the bulk effect is ignored and the assumption of equal VT for both NMS and PMS transistors hold, then the movement of the input voltage out of the center tap position requires a bias voltage VB-VGG/VGG-1.1. It can be shown that Figure 3 and Figure 4 are identical. Figure 4 Simulation * Class AB Amplifier *Filename classab.cir VI 1B 5 DC 0 sin( ) VB 5 0 DC -1.1 V 3 0 DC 5 VGG 1A 1B DC. M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE 14
15 V IG (1A) (3) M1 RG VGG - () RL Vo Vi (5) (1B) M V SS VB-VGG/ (4) Figure 5. Class AB Implementation Replacing VGG by resistor RG The voltage,vgg, can be generated by passing a constant current to a resistor RG. The value is selected such that VGG(RG)(IG). For this example, VGG.V and IG100uA, the value of RG is K. Figure 5 Implementation * Class AB Amplifier *Filename classab3.cir VI 1B 5 DC 0 sin( ) VB 5 0 DC -1.1 V 3 0 DC 5 IG 3 1A 100U RG 1A 1B K M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE 15
16 V IG (1A) (3) M1 VGG M3 - () RL Vo (1B) M Vi (5) (4) V SS VB-VGG/ Figure 6. Class AB Amplifier Implementation Replacing biasing resistor RG by a diode connected transistor M3. The resistor RG can be implemented using a diode connected transistor M3 as shown in Figure 6. The VGS of M3 is adjusted by selecting the (W/L) of M3 such that VGS3VGG. This is illustrated as follows: K N W I DS L K N W IG L W I DS L K (V - V N GG ( V - V ) DS ( V - V ) GG TN ) TN TN ; since G D ; since I DS (100U) (40U)(. -1) I G ; V This is closely satisfied with a choice of W7U and LU. DS V GG Figure 6 Implementation * Class AB Amplifier *Filename classab4.cir without bulk effect (GAMMA0) VI 1B 5 sin( ) VB 5 0 DC -1.1 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 1B 4 N1 W7U LU RL 0 K.MDEL N1 NMS VT1 KP40U 16
17 .MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE The three circuits Figure 4, 5 and 6 are simulated with identical results. The transient analysis is shown below to highlight that the current of each transistor is only on for half the cycle. At the crossing point there is a small current flowing in each transistor. 17
18 V (3) IG M3 (1A) M1 (5) () Vo RL M4 (1B) M Vi (6) VB-VGG/ V SS (4) Figure 7. Class AB Amplifier Implementation Replacing biasing transistor M3 by two diode connected transistors, M3 and M4, to account for non-symmetric threshold voltages due to bulk effect. To account for non-symmetric threshold voltages and the bulk effect, a two diode connected transistors are used as shown in Figure 7. The NMS transistor is used to provide VGG1 and the PMS transistor to provide VGG. The sizing of M3 should be the same or less than M1. This will guarantee that VGG1 >VGS1. Similarly the size of M4 should be the same or less than M. Figure 7 implementation * Class AB Amplifier *Filename classab5.cir without bulk effect (GAMMA0) VI 1B 6 sin( ) VB 6 0 DC -1.1 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 5 4 N1 W1500U LU M4 1B 1B 5 3 P1 W4000U LU RL 0 K.MDEL N1 NMS VT1 KP40U.MDEL P1 PMS VT-1 KP15U.P.TF V() VI.TRAN 1U M.PRBE 18
19 To study the bulk effect, Figure 6 and 7 are simulated with bulk effect parameter GAMMA included in the SPICE parameter list. Simulation shows that Figure 6 fails to track the threshold voltage VGG needed to cause a class-ab operation, resulting cross-over distortion or class-b operation. While Figure 7 still operates as class-ab amplifier. * Figure 6 Class AB Amplifier *Filename classab4.cir VI 1B 5 sin( ) VB 5 0 DC -1.1 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 1B 4 N1 W7U LU RL 0 K *SPICE parameter including bulk effect (GAMMA<>0).MDEL N1 NMS VT1 KP40U GAMMA1.0.MDEL P1 PMS VT-1 KP15U GAMMA1.0.P.TF V() VI.TRAN 1U M.PRBE Figure 6 DC transfer characteristic shows cross-over distortion or class-b operation. 19
20 Figure 7 including bulk effect * Class AB Amplifier VI 1B 6 sin( ) * The input bias voltage need to be adjusted to provide zero output for zero input. VB 6 0 DC 1.1 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 5 4 N1 W1500U LU M4 1B 1B 5 3 P1 W4000U LU RL 0 K * SPICE parameter include the bulk effect parameter GAMMA.MDEL N1 NMS VT1 KP40U GAMMA1.0.MDEL P1 PMS VT-1 KP15U GAMMA1.0.P.TF V() VI.TRAN 1U M.PRBE Figure 7 DC transfer characteristic shows linear characteristic or class-ab operation but with shifting. 0
21 The shifting of the DC transfer characteristic indicates that the input bias voltage VB is no longer correct, when the bulk effect is taken into account. The GAMMA1.0 for the NMS and GAMMA1.0 for the PMS means that selecting VB-VGG/ does not hold. The input bias voltage, VB, must be set to cause the zero output voltage when the input voltage is zero, simulation shows that VB to achieve this. Figure 7 including bulk effect *Class AB Amplifier *Filename classab5.cir VI 1B 6 sin( ) * The input bias voltage need to be adjusted to provide zero output for zero input. VB 6 0 DC.67 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 5 4 N1 W1500U LU M4 1B 1B 5 3 P1 W4000U LU RL 0 K * SPICE parameter include the bulk effect parameter GAMMA.MDEL N1 NMS VT1 KP40U GAMMA1.0.MDEL P1 PMS VT-1 KP15U GAMMA1.0.P.TF V() VI.TRAN 1U M.PRBE 1
22 Re-adjusting the input bias voltage VB to center the output voltage DC transfer characteristic. To study how to achieve the desired output impedance. The current mirror principle can be applied. Note (W/L) can not be independently adjusted. To increase the current in M1 and M by k times requires that (W/L) 1 k*(w/l) 3 and (W/L) k*(w/l) 4 **** MSFETS NAME M1 M M3 M4 MDEL N1 P1 N1 P1 ID 1.00E E E E-04 VGS.67E E00.67E E00 VDS 5.00E E00.67E E00 VBS -5.00E E E E00 VTH.59E E00.59E E00 VDSAT 8.17E E E E-0 GM.45E-03.45E-03.45E-03.45E-03 GDS 0.00E E E E00 GMB 5.17E E E E-04 **** SMALL-SIGNAL CHARACTERISTICS V()/VI 8.55E-01 INPUT RESISTANCE AT VI.150E11 UTPUT RESISTANCE AT V() 1.685E0
23 *Class AB Amplifier *Filename classab5.cir VI 1B 6 sin( ) VB 6 0 DC -.67 V 3 0 DC 5 IG 3 1A 100U M1 3 1A 4 N1 W1500U LU M 4 1B 3 P1 W4000U LU M3 1A 1A 5 4 N1 W150U LU M4 1B 1B 5 3 P1 W400U LU *RL 0 k.mdel N1 NMS VT1 KP40U GAMMA1.0.MDEL P1 PMS VT-1 KP15U GAMMA1.0.P.TF V() VI.TRAN 1U M.PRBE **** MSFETS NAME M1 M M3 M4 MDEL N1 P1 N1 P1 ID 1.00E E E E-04 VGS.88E00 -.8E00.88E00 -.8E00 VDS 4.85E E00.88E00 -.8E00 VBS -5.15E E E E00 VTH.6E E00.6E E00 VDSAT.58E E-01.58E E-01 GM 7.75E E E E-04 GDS 0.00E E E E00 GMB 1.6E E E E-04 **** SMALL-SIGNAL CHARACTERISTICS V()/VI 8.36E-01 INPUT RESISTANCE AT VI.156E11 UTPUT RESISTANCE AT V() 5.39E01 R P R 1 g m K P 1 (W/L) I D 1 (15U)(4000U/U)(1m) 19 ohm R N R 1 1 g m1 K N 1 (W/L) 1 I D1 1 (40U)(1500U/U)(1m) 19 ohm R R P //R N 19 / 64.5 ohm 3
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