NPN Darlington Power Silicon Transistor
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1 Available NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/539 DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTX level. This TO-213AA isolated package features a 180 degree lead orientation. Qualified Levels: JAN, JANTX, and JANTX TO-213AA (TO-66) Package Important: For the latest information, visit our website FEATURES JEDEC registered and Hermetically sealed JAN, JANTX, and JANTX qualifications are available per MIL-PRF-19500/539 RoHS compliant versions available (commercial grade only) APPLICATIONS / BENEFITS Convenient package Mechanically rugged Military, space and other high reliability applications MAXIMUM T C = 25 ºC unless otherwise stated Parameters/Test Conditions Symbol alue Unit Junction and Storage Temperature T J and T STG -55 to +200 o C Thermal Resistance Junction-to-Case R ӨJC 2.66 o C Collector-Base oltage CBO Collector-Emitter oltage CEO Emitter-Base oltage EBO 5 Continuous Operating Collector Current I C 8 A Base Current I B 120 ma Total Power Dissipation T C = 0 T C = 100 ºC NOTES: 1. Derate linearly at W/ºC above T C > 0 ºC. P T W MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 1 of 6
2 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTX = JANTX Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-rohs Compliant JEDEC type number (see Electrical Characteristics table) Symbol I B I C I E T C CB CBO CC CE CEO EB EBO SYMBOLS & DEFINITIONS Definition Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 2 of 6
3 ELECTRICAL 25 ºC unless otherwise stated Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS Collector-Emitter Breakdown oltage I C = 100 ma Collector-Emitter Cutoff Current CE = 60 BE = 1.5 CE = 80 BE = 1.5 Collector-Emitter Cutoff Current, Base Open CE = 30 CE = 40 Emitter-Base Cutoff Current EB = 5 Forward Current Transfer Ratio I C = 1 A, CE = 3 I C = 4 A, CE = 3 I C = 8 A, CE = 3 Collector-Emitter Saturation oltage I C = 4.0 A, I B = 16 ma I C = 8.0 A, I B = 80 ma Base-Emitter Saturation oltage CE = 3.0, I C = 4 A I C = 8.0 A, I B = 80 ma (BR)CEO I CEX 10 µa I CEO 0.5 ma I EBO 2.0 ma h FE CE(sat) BE(sat) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio h fe CE = 3.0, I C = 3.0 A, f = 1 MHz Common Emitter Small-Signal Short-Circuit Forward Current Trans-Ratio h fe 300 CE = 3, I C = 3 A, f = 1 khz Common Base Output CB = 10, I E = 0 A, 100 khz f 1 MHz C obo 200 pf T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 3 of 6
4 ELECTRICAL T C = 25 o C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On time CC = 30, I C = 4 A, I B1 = 16 ma t on 2.0 µs Turn-Off time CC = 30, I C = 4 A, I B1 = -I B2 = 16 ma t off 8.0 µs SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053) DC Tests T C = +25 C, t = 1 second, duty cycle 10% Test 1 CE = 8, I C = 8 A Test 2 CE = 20, I C = 2.0 A Test 3 CE = 60, I C = 100 ma () CE = 80, I C = 100 ma () T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 4 of 6
5 SAFE OPERATING AREA CE Collector to Emitter oltage (olts) FIGURE 1 Maximum Safe Operating Area (dc) IC = Collector Current (Amperes) IC = Collector Current (Amperes) L Inductance (millihenries) FIGURE 2 Safe Operating Area for switching between saturation and cutoff (unclamped inductive load) T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 5 of 6
6 PACKAGE DIMENSIONS DIM INCH MILLIMETERS MIN MAX MIN MAX Notes CB CD CH HR HT HR LD , 6 LL L MHD MHS PS PS S T1 Base T2 Emitter Case Collector NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. These dimensions should be measured at points inch (1.27 mm) inch (0.13 mm) inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within inch (0.03 mm) concave to inch (0.10 mm) convex inside a inch (23.62 mm) diameter circle on the center of the header and flat within inch (0.03 mm) concave to inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Lead number 1 is the emitter, lead 2 is the base, case is the collector. 8. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SCHEMATIC T4-LDS-0171, Rev. 2 (11/18/13) 2013 Microsemi Corporation Page 6 of 6
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