Diode Thyristors SEMICONDUCTOR TECHNICAL DATA

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D Diode Thyristors... designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive plastic TO-226AA package for high-volume requirements, this low-cost plastic package is readily adaptable for use in automatic insertion equipment. Low Switching Voltage 8 Volts Typical Uniform Characteristics in Each Direction Low On-State Voltage 1.7 Volts Maximum Low Off-State Current.1 µa Maximum Low Temperature Coefficient.2 %/ C Typical SBS (PLASTIC) CASE 29-4 (TO-226AA) STYLE 12 MAXIMUM RATINS (TJ = 25 C unless otherwise noted.) Rating Symbol Value Unit Power Dissipation PD 5 mw DC Forward Current IF 2 ma DC ate Current (Off-State Only) I(off) 5 ma Repetitive Peak Forward Current (1% Duty Cycle, µs Pulse Width, TA = C) Non-repetitive Forward Current ( µs Pulse Width, TA = 25 C) IFM(rep) 2 Amps IFM(nonrep) 6 Amps Operating Junction Temperature Range TJ 55 to +125 C Storage Temperature Range Tstg 65 to +15 C REV 2 Motorola Thyristor Device Data 1 Motorola, Inc. 1995

2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Switching Voltage VS Vdc Switching Current MBS4992 MBS4993 IS µadc Switching Voltage Differential (See Figure ) 7VS1 VS Vdc ate Trigger Current (VF = 5 Vdc, RL = 1 k ohm) MBS4992 MBS4993 IF 5 µadc Holding Current Off-State Blocking Current (VF = 5 Vdc, TA = 25 C) (VF = 5 Vdc, TA = 85 C) (VF = 5 Vdc, TA = 25 C) (VF = 5 Vdc, TA = C) Forward On-State Voltage (IF = 175 madc) (IF = 2 madc) MBS4992 MBS4993 IH Peak Output Voltage (Cc =.1 µf, RL = 2 ohms, (Figure 7) Vo Vdc Turn-On Time (Figure 8) ton 1 µs Turn-Off Time (Figure 9) toff 3 µs Temperature Coefficient of Switching Voltage ( 5 to +125 C) TC +.2 %/ C Switching Current Differential (See Figure ) IS2 µa IB VF madc µadc Vdc TYPICAL ELECTRICAL CHARACTERISTICS FIURE 1 SWITCHIN VOLTAE versus TEMPERATURE FIURE 2 SWITCHIN CURRENT versus TEMPERATURE VS, SWITCHIN VOLTAE (NORMALIZED) IS, SWITCHIN CURRENT (NORMALIZED) Motorola Thyristor Device Data

3 FIURE 3 HOLDIN CURRENT versus TEMPERATURE FIURE 4 OFF-STATE BLOCKIN CURRENT versus TEMPERATURE I H, HOLDIN CURRENT (NORMALIZED) Normalized to 25 C I B, OFF-STATE BLOCKIN CURRENT ( µ A)..1.1 VF = 5. V FIURE 5 ON-STATE VOLTAE versus FORWARD CURRENT FIURE 6 PEAK OUTPUT VOLTAE (FUNCTION OF RL AND Cc) I F, FORWARD ON-STATE CURRENT (AMP) VF, FORWARD ON-STATE VOLTAE (VOLTS) V o, PEAK OUTPUT VOLTAE (VOLTS) RL = 5 Ω RL = Ω RL = 5 Ω RL = 2 Ω RL = 5 Ω TA = 25 C Cc, CHARIN CAPACITANCE (µf) FIURE 7 PEAK OUTPUT VOLTAE TEST CIRCUIT K Cc 15 V ms MIN Vin D.U.T. RL V Motorola Thyristor Device Data 3

4 Mercury Relay FIURE 8 TURN-ON TIME TEST CIRCUIT kω Anode Voltage VS + 12 V kω.1 µf D.U.T. + ton VF VF +.1 (VS VF) Turn-on time is measured from the time VS is achieved to the time when the anode voltage drops to within 9% of the difference between VS and VF. FIURE 9 TURN-OFF TIME TEST CIRCUIT +I VF1 Ω 5 Ω + C 5. V Mercury Relay (N.O.) D.U.T. V VS2 IH1 IS2 IH2 VS1 IB1 +V CHARACTERISTICS With the SBS in conduction and the relay contacts open, close the contacts to cause anode A2 to be driven negative. Decrease C until the SBS just remains off when anode A2 becomes positive. The turn off time, toff, is the time from initial contact closure and until anode A2 voltage reaches zero volts. I VF2 FIURE DEVICE EQUIVALENT CIRCUIT, CHARACTERISTICS AND SYMBOLS +I VF1 IH1 VS1 V +V VS2 IS2 IH2 IB1 CIRCUIT SYMBOL EQUIVALENT CIRCUIT I VF2 CHARACTERISTICS 4 Motorola Thyristor Device Data

5 PACKAE DIMENSIONS SEATIN PLANE R A X X H V 1 N F P N B L K C D STYLE 12: PIN 1. MAIN TERMINAL 1 2. ATE 3. MAIN TERMINAL 2 J SECTION X X NOTES: 1. DIMENSIONIN AND TOLERANCIN PER ANSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. CONTOUR OF PACKAE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F H J K L N P R V CASE 29-4 (TO 226AA) Motorola Thyristor Device Data 5

6 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 2912; Phoenix, Arizona EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; , Nishi-otanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data /D

7 This datasheet has been download from: Datasheets for electronics components.