Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

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1 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 4 to 4 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features Frequency: 4--4 MHz P1dB: 25 9 MHz Small--Signal Gain: MHz Third Order Output Intercept Point: MHz Single 5 V Supply Active Bias Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1, Units, 12 mm Tape Width, 7--inch Reel. Document Number: Rev. 5, 3/ MHz, 19.5 db 25 dbm InGaP HBT GPA SOT -89 Table 1. Typical Performance (1) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Symbol 9 MHz 214 MHz 35 MHz Unit G p db IRL db ORL db Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage V CC 6 V Supply Current I CC 3 ma RF Input Power P in 25 dbm Storage Temperature Range T stg --65 to +15 C Junction Temperature T J 175 C Power Compression Third Order Output Intercept Point P1dB dbm OIP dbm 1.,T A =25 C, 5 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 81 C, 5 Vdc, 135 ma, no RF applied Characteristic Symbol Value (2) Unit R JC 27.4 C/W 2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to and search for AN1955., 28, 211, 214, 216. All rights reserved. 1

2 Table 4. Electrical Characteristics (V CC = 5 Vdc, 9 MHz, T A =25 C, 5 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G p db Input Return Loss (S11) IRL db Output Return Loss (S22) ORL db Power 1dB Compression P1dB 25 dbm Third Order Output Intercept Point OIP3 4.5 dbm Noise Figure NF 5.7 db Supply Current I CC ma Supply Voltage V CC 5 V Table 5. Functional Pin Description Pin Number Pin Function 2 1 RF in 2 Ground 3 RF out /DC Supply Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C11) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C 2

3 5 OHM TYPICAL CHARACTERISTICS 25 G p, SMALL--SIGNAL GAIN (db) T C =--4 C 25 C S11, S22 (db) --5 S11 S22 85 C f, FREQUENCY (GHz) f, FREQUENCY (GHz) 4 Figure 2. Small -Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency G p, SMALL--SIGNAL GAIN (db) MHz 196 MHz 214 MHz 26 MHz 35 MHz P1dB, 1 db COMPRESSION POINT (dbm) P out, OUTPUT POWER (dbm) Figure 4. Small -Signal Gain versus Output Power f, FREQUENCY (GHz) Figure 5. P1dB versus Frequency I CC, COLLECTOR CURRENT (ma) V CC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) MHz Tone Spacing Figure 7. Third Order Output Intercept Point versus Frequency 3

4 5 OHM TYPICAL CHARACTERISTICS OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) f = 9 MHz 1 MHz Tone Spacing V CC, COLLECTOR VOLTAGE (V) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 42 4 f = 9 MHz 1 MHz Tone Spacing T, TEMPERATURE (_C) 1 Figure 8. Third Order Output Intercept Point versus Collector Voltage Figure 9. Third Order Output Intercept Point versus Case Temperature IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V --7 CC =5Vdc f = 9 MHz 1 MHz Tone Spacing P out, OUTPUT POWER (dbm) MTTF (YEARS) T J, JUNCTION TEMPERATURE ( C) 15 Figure 1. Third Order Intermodulation versus Output Power NOTE: The MTTF is calculated with,i CC = 135 ma Figure 11. MTTF versus Junction Temperature NF, NOISE FIGURE (db) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V CC = 5 Vdc, f = 214 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 Probability on CCDF f, FREQUENCY (GHz) Figure 12. Noise Figure versus Frequency P out, OUTPUT POWER (dbm) Figure 13. Single -Carrier W -CDMA Adjacent Channel Power Ratio versus Output Power 4

5 5 OHM APPLICATION CIRCUIT: 8-1 MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 Z4 DUT Z5 L1 Z6 C3 Z7 C4 Z8 RF OUTPUT C1 V CC C2 C5 C6 C7 Z1, Z8.274 x.58 Microstrip Z2, Z7.73 x.58 Microstrip Z3.66 x.58 Microstrip Z4.59 x.58 Microstrip Z5.172 x.58 Microstrip Z6.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure Ohm Test Circuit Schematic S21, S11, S22 (db) S21 S11 S f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency C5 C1 C6 MMG3XX Rev 2 Figure Ohm Test Circuit Component Layout R1 C4 C3 L1 C2 C7 Table 8. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C221J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5.2 pf Chip Capacitor 1265JR2BS AVX C6 4.7 pf Chip Capacitor C63C479J5GAC Kemet C7 1.8 pf Chip Capacitor C126C189D5GAC Kemet L1 1 nh Chip Inductor HK1681NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 5

6 5 OHM APPLICATION CIRCUIT: MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 DUT Z4 L1 Z5 C3 Z6 C4 Z7 RF OUTPUT C1 V CC C2 C5 C6 Z1, Z7.347 x.58 Microstrip Z2.399 x.58 Microstrip Z3.176 x.58 Microstrip Z4.172 x.58 Microstrip Z5.162 x.58 Microstrip Z6.241 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure Ohm Test Circuit Schematic 2 S21 1 R1 S21, S11, S22 (db) --1 S11 C1 C5 C4 C3 L1 C6 C S f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure Ohm Test Circuit Component Layout Table 9. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C22J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5 1.5 pf Chip Capacitor C63C159J5RAC Kemet C6 1.1 pf Chip Capacitor C63C119J5GAC Kemet L1 15 nh Chip Inductor HK16815NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 6

7 5 OHM APPLICATION CIRCUIT: MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 DUT Z4 Z5 L1 Z6 C3 Z7 C4 RF OUTPUT C1 V CC C2 C5 C6 Z1, Z7.347 x.58 Microstrip Z2.488 x.58 Microstrip Z3.87 x.58 Microstrip Z4.136 x.58 Microstrip Z5.36 x.58 Microstrip Z6.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure 2. 5 Ohm Test Circuit Schematic 2 S21 S21, S11, S22 (db) S11 S f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency C1 C5 MMG3XX Rev 2 Figure Ohm Test Circuit Component Layout R1 C4 C3 L1 C6 C2 Table 1. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pf Chip Capacitors C85C22J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5, C6 1.1 pf Chip Capacitors C63C119J5GAC Kemet L1 15 nh Chip Inductor HK16815NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 7

8 5 OHM APPLICATION CIRCUIT: MHz V SUPPLY R1 RF INPUT Z1 Z2 Z3 Z4 DUT Z5 Z6 L1 Z7 C3 Z8 C4 RF OUTPUT C1 V CC C2 C5 C6 C7 Z1, Z8.347 x.58 Microstrip Z2.68 x.58 Microstrip Z3.419 x.58 Microstrip Z4, Z5.88 x.58 Microstrip Z6.84 x.58 Microstrip Z7.43 x.58 Microstrip PCB Getek Grade ML2C,.31, r =4.1 Figure Ohm Test Circuit Schematic 2 1 S21 R1 S21, S11, S22 (db) S11 S f, FREQUENCY (MHz) Figure 24. S21, S11 and S22 versus Frequency C1 C5 C6 MMG3XX Rev 2 C4 C3 L1 Figure Ohm Test Circuit Component Layout C7 C2 Table Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 3.3 pf Chip Capacitor C85C339J5GAC Kemet C2 2. pf Chip Capacitor C85C29J5GAC Kemet C3.1 F Chip Capacitor C63C14J5RAC Kemet C4 2.2 F Chip Capacitor C85C225J4RAC Kemet C5.6 pf Chip Capacitor 635JR6BS AVX C6.9 pf Chip Capacitor 635JR9BS AVX C7.8 pf Chip Capacitor 635JR8BS AVX L1 56 nh Chip Inductor HK16856NJ--T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 8

9 5 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S -Parameters (,T A =25 C, 5 Ohm System) f S 11 S 21 S 12 S 22 MHz S 11 S 21 S 12 S (continued) 9

10 5 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S -Parameters (,T A =25 C, 5 Ohm System) (continued) f S 11 S 21 S 12 S 22 MHz S 11 S 21 S 12 S

11 X X X.7 2X 1.5 Figure 26. PCB Pad Layout for SOT -89A M314N AWLYWZ Figure 27. Product Marking 11

12 PACKAGE DIMENSIONS 12

13 13

14 14

15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN31: General Purpose Amplifier Biasing Software.s2p File Development Tools Printed Circuit Boards Reference Designs MHz, 4 W, 28 V W--CDMA Smart Demo Reference Design (Devices MMG314N, MW7IC224N) To Download Resources Specific to a Given Part Number: 1. Go to 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Apr. 28 Initial Release of Data Sheet 1 Sept. 28 Updated Fig. 15, S21, S11 and S22 versus Frequency, to correct S11 and S22 curve label transposition error, p. 6 Updated data in Table 12, Common Emitter S-Parameters, for better simulation response, pp Jan. 211 Corrected temperature at which ThetaJC is measured from 25 C to81 C and added no RF applied to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 Removed I CC bias callout from applicable graphs as bias is not a controlled value, pp Removed I CC bias callout from Table 12, Common Emitter S--Parameters heading as bias is not a controlled value, pp Added.s2p file and Printed Circuit Boards availability to Software and Tools, p. 16 Added Reference Design availability to Development Tools, p Oct. 211 Table 1, Maximum Ratings, increased Input Power from 15 dbm to 25 dbm to reflect the true capability of the device, p. 1 Changed ESD Human Body Model rating from Class 1C to Class 1B to reflect recent ESD test results of the device, p. 2 Corrected part number for the C7 capacitor in Table 8, 5 Ohm Test Circuit Component Designations and Values, from C63C189J5GAC to C126C189D5GAC, p. 5. Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case (SOT--89) with Case (SOT--89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site s SOT--89 package has slight dimensional differences, pp. 1, Refer to PCN13337, GaAs Fab Transfer. 4 Aug. 214 Table 2, Maximum Ratings: updated Junction Temperature from 15 C to 175 C to reflect recent test results of the device, p. 1 Added Failure Analysis information, p Mar. 216 Overview paragraph updated to reflect actual matching of the device, p. 1 Fig. 27, Product Marking: updated date code line to reflect improved traceability information, p

16 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 28, 211, 214, 216 Document Number: 16 Rev. 5, 3/216

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