Analysis of Multilayer Stacked Microstrip Patch Antenna for Bandwidth Enhancement

Transcription

1 ISSN(Olie) : Aalysis of Multilayer Staced Microstrip Patch Atea for Badwidth Ehacemet Nagedra Pachauri, Apara Gupta ad Soi Chaglai Dept. of Electroics ad Commuicatio Egieerig, Laxmi Naraya College of Techology & Sciece Bhopal, Madhya Pradesh, Idia ABSTRACT: I this paper we desig ad simulate four types atea with differet dielectric material ad compared result o the basis of variatio of differet dielectric coefficiet ad differet layers ad calculate some parameter of atea for badwidth aalysis. We have ehace badwidth of icreasig layer that is 1.639%, 15.7%, 1.9% ad 33.% respectively up to forth layer. EYWORDS: Microstrip patch atea; staced Atea, badwidth. I. INTRODUCTION Microstrip ateas are i greater demads i wireless commuicatio ad space applicatios because of small size, low weight. The microstrip ateas possess the shortcomigs such as arrow badwidth, low gai ad poor efficiecy [1]. These shortcomigs ca be oveome by usig multilayered rectagular microstrip ateas. This ca be achieved by proper combiatio of the substrate ad superstrate thicess over ad uder the patch. Multilayer Microstrip patch is also useful to provide protectio to patch from heat, rai, physical damage, ad aturally formed ice layers durig flight [3]. There are may methods available i the literature to calculate the resoat frequecy of multilayered rectagular patch based o umerical techique []. Noe of the efficiet aalytical model is available i literature related to multilayered structure to obtai the atea dimesio. There are maily four techiques for ehacemet of Badwidth of give Microstrip Patch Atea. Which are, multilayered cofiguratios of Broadbad Microstrip patch atea, Staced Multiresoator Microstrip patch atea, Modified Shape Patch Broadbad Microstrip patch atea, Plaar Multiresoator cofiguratio of Broadbad Microstrip patch atea, i multilayered cofiguratio patches are placed over differet dielectric substrates ad they are staced o each other. Based o the couplig mechaism, these cofiguratios are of two types electromagetically-coupled or aperture-coupled. There are maily two method of couplig to multilayered atea, Electromagetically-coupled Techique ad Aperture-coupled Techique. I Staced Multiresoator Microstrip patch atea cofiguratio multiresoator ad staced cofiguratios are combied to provide broadbad microstrip patch atea. This atea is applicable for wireless commuicatio such as WLAN. A sigle lie feed staced microstrip atea for 4G system is preseted ad performace of proposed atea improvemet of badwidth 15% [4]. II. RELATED WOR I. J. Bahl et. al [3] desig of a microstrip atea covered with a dielectric layer is preseted. Due to loadig, the resoat frequecy of the atea chages. The absolute value of the chage icreases with the operatig frequecy, the relative permittivity (except plasma), ad the thicess of the dielectric layer. This chage may cause degradatio i performace due to the iheret arrow badwidth of microstrip ateas if the effect of loadig is ot cosidered i the desig. The curves preseted here may be used to desig microstrip ateas that may be subjected to icig or a plasma eviromet or coated with protective layers. Numerical ad experimetal results for the fractioal chage i the resoat frequecy are roud to be i good agreemet. Copyright to IJIRSET DOI: /IJIRSET

2 ISSN(Olie) : [4] A sigle lie feed staced microstrip atea for 4G system is preseted by Awadhesh. G. adu ad D.C. Dhubarya. The proposed atea with two properly square patches are staced. The top patch ca perform as a drive elemet is desig o.44 GHz ad lower patch is also desig o.44 GHz. The performace of proposed atea for 4G bad frequecy ( MHz). Also gatig the improvemet of badwidth (15%) is very high compared to covetioal atea. R. Afzalzadeh ad R. N. arear [5] desig a dielectric protectig superstate with spacig o the order of oe wavelegth from the rectagular microstrip patch atea ad of thicess up to about half a wavelegth shows very small variatio i resoace frequecy (fr) ad reflectio coefficiet (Γ). Effects of the same o radiatio patter (RP) icludes drastic chages i beamwidths. By use of the spaced superstate the patch ca be protected without the eed to redesig parameters lie fr ad Γ Joh Wiley & Sos, Ic. Shavit, R [6] A theoretical model to aalyze a covered rectagular atea with a arbitrary dielectric costat superstrate is developed. The atea is simulated by the radiatio of two magetic dipoles located at the radiatig edges of the patch. The Grees fuctio of a elemetary magetic dipole i a superstrate-substrate structure, utilizig spectral-domai aalysis, is formulated, ad the surface-wave ad radiatio field are computed. A improved trasmissio lie model, which cosiders the stored eergy ear the radiatig edges ad the exteral mutual couplig, is used to compute the iput impedaces ad radiatio efficiecy. Desig cosideratios o the superstrate thicess ad its dielectric costat are discussed. Experimetal data for a sigle elemet ad a 4 4 microstrip array is preseted to validate the theory. N. Aouabdia et. al[7]wored o cosists i characterizig a rectagular microstrip atea while emphasizig the possibilities of various types of curret expasio fuctios. A detailed calculatio of the spectral Grees dyad, ad coductio curret calculated by the itegral equatio method via the momets method was treated. The umerical method cosists i simulatig the various types of basic fuctios by testig covergece ad by cosiderig the effect of the parameters of the dielectric substrate such as thicess ad permittivity o resoace frequecy. A applicatio of the air gap structure was also tae ito accout. Asari, J. A., Sigh, P., & Yadav, N. P [8] aalyses of staced patch atea with two parasitic elemets is preseted. The atea shows improved radiatio ad directivity by 6.57 db whe compared with sigle layer patch atea. The badwidth of the atea is foud to be depedet o various parameters such as h 1, h, ad s. The proposed results are compared with the IE3D simulatio ad reported experimetal results. Sharma, A., & Sigh, G. [9] they are simulated a sigle-pi-shorted microstrip lie fed three-dielectric-layer (with differet permittivity ad thicess) rectagular patch microstrip atea for all those commuicatio systems whose limited atea size is premium. Low permittivity hard foam has bee used as oe substrate to achieve wide badwidth. The simulatio of this proposed atea has bee performed by usig CST Microwave Studio, which is a commeially available electromagetic simulator based o the fiite differece time domai techique. Liu, Z. F., et al [10] explaied arrow badwidth of a microstrip atea is oe of the importat features that restrict its wide usage. A simple ad practical method for the desig of broad-bad microstrip ateas is preseted i this paper. Utilizig this desig techique, several two-layer microstrip ateas have bee proposed. To cofirm the applicability of the method for the desigs of ateas at L-bad, experimets have bee carried out. The measured results show that the proposed ateas have a badwidth of up to 5.7%. Also, the method proposed i this paper is applicable to the desig of other types of multilayered plaar ateas. J. A. Asari et. al [11] aalyzed of multilayer patch atea has bee carriedout. The atea shows the broad badwidth whe a patch is staced over fed patch i gap coupled structure. Typically a 4.65% badwidth is achieved i three layer atea. Further the badwidth of the atea depeds iversely o the gap(s). The gai of the atea is foud to be 6.08 db with 3 db beam width of 9. The theoretical results are compared with IE3D simulatio ad reported experimetal data. Copyright to IJIRSET DOI: /IJIRSET

3 ISSN(Olie) : Oluyemi P. [1] a ovel desig of a staced-patch triple-bad atea i both ciular ad liear polarizatios that ca be used o a hadheld termial for surveyig ad geo-iformatics applicatios is preseted. The iculcatio of corer trucatio ad I-slot i both the lower ad middle patches has achieved better impedace badwidth ad axial ratio at GPS L1, L, ad GSM 1800 resoat frequecy bads. A prototype of the proposed desig is fabricated, ad its performace is verified i measuremet. Samir Dev Gupta, M. C. Srivastava [13] described impedace badwidth, oe of the importat characteristics of microstrip patch ateas, ca be sigificatly improved by usig a multilayer dielectric cofiguratio. I this paper the focus is o badwidth ehacemet techique of a multilayer patch atea for X-bad applicatios. I order to ehace the badwidth, atea losses are cotaied by cotrollig those quality factors which ca have a sigificat impact o the badwidth for a give permittivity ad thicess of the substrate. This has bee achieved by coformal trasformatio of the multidielectric microstrip atea. For the ease of aalysis Wheelers trasformatio is used to map the complex permittivity of a multilayer substrate to a sigle layer. Method of Momets ad Fiite Differece Time Domai approaches are used for the computatio of results. III. ANALYSIS OF MULTILAYER MICROSTRIP PATCH ANTENNA There are two way to calculate the value of effective dielectric for multilayers Microstrip atea coformal mappig approach ad trasmissio lie approach but we used trasmissio lie approach for aalysis. The lowest-order mode, TM 10, resoates whe the effective legth across the patch is a half-wavelegth. Fig.1, demostrates the patch fed below from a coaxial alog the resoat legth. Radiatio occurs due to the frigig fields. These fields exted the effective ope ciuit (magetic wall) beyod the edge. The resoace frequecy f m depeds o the patch size, cavity dimesio, ad the fillig dielectric costat, as follows: f m m c r (1) Where m, = 0, 1, m = wave umber at m, mode, c is the velocity of light, substrate, ad r is the dielectric costat of m m W L () For TM 01 mode, the legth of o-radiatig microstrip patch s edge at a certai resoace frequecy ad dielectric costat accordig to equatio (1) becomes L W f r c f r c r 1 r (3) (4) Where f r = resoace frequecy at which the rectagular microstrip ateas are to be desiged. The radiatig edge W, patch width, is usually chose such that it lies withi the rage L<W>L, for efficiet radiatio. The ratio W/L = 1.5 gives good performace accordig to the side lobe appearaces. I practice the frigig effect causes the effective distace betwee the radiatig edges of the patch to be slightly greater tha L. By usig above equatio we ca fid the value of actual legth of the patch as, Copyright to IJIRSET DOI: /IJIRSET

4 ISSN(Olie) : c L l f r eff eff (5) Fig. 1 Multilayer Microstrip Atea [13]. = effective dielectric costat ad l = lie extesio which is give multilayered substrate material Where trasmissio lie is show i Figure.I this figure, a microstrip trasmissio lie of legth l, width w, ad coductor thicess t is show. However, each layer has differet relative dielectric permittivity ad substrate thicess as show i the figure. I the case of multilayered substrate microstrip trasmissio lie, the idividual layer shave differet relative dielectric permittivity, ad overall relative dielectric permittivity of the substrate is preseted by ε ad the value of ε for a two-layered substrate material has bee obtaied i[14]. Similarly, the expressio for the frequecy depedet effective relative dielectric permittivity has bee obtaied i[15]. These two cocepts are merged to obtai the mathematical expressio for the frequecy-depedet effective relative dielectric permittivity of the multilayered substrate material trasmissio lie. The expressio for the effective dielectric permittivity of the multilayered substrate material is expressed as usig the followig. d1 d1 d1 d d 3 1 d d d d Fig. Multilayered trasmissio lie at terahertz frequecy (6) (7) (8) (9) Copyright to IJIRSET DOI: /IJIRSET

5 d ISSN(Olie) : ad i geeral cosh 4h h w h 1 1 h 1 1 for =1,,3.. (11) I the above equatios, h, h -1, h 1 represets the idividual substrate layer thicess startig from the top layer. Further, ε, ε -1, ε 1 are the complex relative dielectric permittivity of the respective substrate layer. Where 1 1 l 1 for (1) With the help of Eqs.(6) (1), the frequecy-idepedet relative dielectric permittivity of the multilayer substrate material(ε ) is obtaied. Oce this parameter is obtaied, the ext goal is to fid the frequecy-depedet behavior. The frequecy-depedet behavior of a sigle-layered substrate material micro- strip trasmissio lie is obtaied with the help of the mathematical expressio discussed i detail i [17, 18]. However, i the preset case, as the multilayered Substrate relative dielectric permittivity has bee reduced to ε, it ca be treated as the relative dielectric permittivity of a sigle substrate layer of thicess h = h + h h 1 ad is obtaied with the followig formulas f f e f e 1 f f f 0 a m b w h a b h m m0m c m m ta e c 1 1 w h w h e 1 w h e 1 1h w e 0.45 f 1/ 0 f a for for w h 0.7 w h F, h 0.17 e 1 F, h w h for for w h 1 w h 1 (10) (13) (14) (15) (16) (17) (18) t (0) wh (19) Copyright to IJIRSET DOI: /IJIRSET

6 ISSN(Olie) : I the above expressios, h = h 3 + h + h 1, w, ad t are the total substrate thicess, width of the trasmissio lie, ad the thicess of the coductor, respectively. I the aalysis, the absolute value of d has bee tae i to the cosideratio because for three or more substrate layers, the value of d as show i(19)may be egative. However, its value should remai positive to represet the distace betwee two parallel plates of the equivalet capacitace model of the substrate. IV. DESIGN AND SIMULATION OF PROPOSED ANTENNA The proposed ateas desiged frequecy of.44 GHz, taig four types of dielectric costat of the substrate, RT Duriod (ε r ) =., glass epoxy= 4., wove Teflo fiber glass =.55, Ceramic= 8.. The height of dielectric substrate (h) = mm, 1.6 mm, 1.6 mm, 4.75 mm respectively. We have desig four differet atea with differet dielectric costat ad calculated effective dielectric the desig differet Microstrip atea. (a) Desigig of Microstrip Atea with First Layer The basic desig parameter as desig frequecy.44 GHz, thicess of the patch 1.6 mm ad dielectric coefficiet of substrate is.55. Puttig these parameters i above ad ca be calculated effective dielectric with help of two approach but we put i trasmissio lie approach ad calculate legth of the patch 9.8 mm ad value of width mm. The dimesio of the feed lie calculated directly from the lie Gauge of Zelad software for matchig 50 Ω, are 1 mm 4.47 mm ad bottom side of patch cosider to W g = W+6h ad L g = L+6h. The desig parameters of the patch are idicated i Table 1. Table 1: Desig parameters of sigle layer microstrip atea. Parameters Specificatio Uit Patch width W mm Patch legth L 9.8 mm Feed lie legth F 1 mm Strip width T 4.47 mm Groud Plae width W g 70 mm Groud Plae legth L g 60 mm Cut width W C 6 mm Cut depth D C 6.5 m m (b) Simulatio of Atea with First Layer by IE3D Maig use of the IE3D software directly ad select the Mgrid file, After the selectio of Mgrid file the ope basic parameter box ad select the grid size 0.05 mm, meshig frequecy 5 GHz ad cell per wavelegth = 0, the feed the some parameter before simulatio i this dialog box lie as top of the surface taig 1.6 mm, dielectric costat taig.55, ad loss taget taig After the feed above parameters draw the fiite groud plae with dimesio 60 x 70 mm. Now draw the rectagular shape of legth 9.8 mm ad width mm. After draw the patch select the edge of the patch ad cut width of cut is 6 mm ad depth of cut is 6.5 mm, ow draw a straight lie with legth of 1 mm ad width 4.47 mm. After the completio of desigig select feed poit locatio ad feed at 9.1 mm i directio ad 0 mm i y directio. Copyright to IJIRSET DOI: /IJIRSET

7 ISSN(Olie) : Fig. 3 Proposed atea with first layer at.44 GHz. Simulatio start with meshig frequecy 5 GHz ad the rage of simulatio frequecy 0-5 GHz with step size 0.01 select the scheme as classical ad eable adaptive symmetric matrix solver, simulatio egie set as IE3D Full-Wave EM Egie, eable curret distributio ad radiatio patter, the select o. After simulatio all data are save i software directory. (c) Desigig of Microstrip Atea with Secod Layer The basic desig parameter as desig frequecy.44 GHz, thicess of the patch 1.6 mm, ad 1.6 mm with dielectric coefficiets of substrate are.55 ad 4.. Puttig these parameter i trasmissio lie approach ad calculate legth of the patch 9.6 mm ad value of width mm. The dimesio of the feed lie calculated directly from the lie Gauge of Zelad software for matchig 50 Ω, are 1 mm 4.47 mm ad bottom side of patch cosider to W g = W+6h ad L g = L+6h. The desig parameters of the patch are idicated i Table. Table : Desig parameters of secod layer atea at.44 GHz. Parameters Specificatios Uit Upper patch width W mm Upper patch legth L 9.6 mm Feed lie legth F 1 mm Strip width T 4.47 mm Groud plae legth L g 60 mm Groud plae width W g 70 mm Cut width W C 6 mm Cut depth D C 6.5 mm. (d) Simulatio of atea with secod layer by IE3D Maig use of the IE3D software directly ad select the Mgrid file, After the selectio of Mgrid file the ope basic parameter box ad select the grid size 0.05 mm, meshig frequecy 5 GHz ad cell per wavelegth = 0, the feed the some parameter before simulatio i this dialog box lie as top of the surface taig mm, dielectric costat taig.55, ad loss taget taig 0.05, Agai taig dielectric costat for secod layer 4. ad loss taget 0.. After the feed above parameters draw the fiite groud plae with dimesio 60 x 70 mm. After the feed above parameters draw the rectagular shape of legth 9.6 mm ad width mm. After draw the patch select the edge of the patch ad cut width of cut is 6 mm ad depth of cut is 6.5 mm, ow draw a straight lie with legth of 1 mm ad width 4.47 mm. After the completio of desigig select feed poit locatio ad feed at 9.1 mm i directio ad 0 mm i y directio. Copyright to IJIRSET DOI: /IJIRSET

8 ISSN(Olie) : Fig. 4 Proposed atea with secod layer at.44 GHz. Simulatio start with meshig frequecy 5 GHz ad the rage of simulatio frequecy 0-5 GHz with step size 0.01 select the scheme as classical ad eable adaptive symmetric matrix solver, simulatio egie set as IE3D Full-Wave EM Egie, eable curret distributio ad radiatio patter, the select o. After simulatio all data are save i software directory. (e) Desigig of Microstrip atea with third layer The basic desig parameter as desig frequecy.44 GHz, thicess of the patch for first layer 1.6 mm, for secod layer 1.6 mm ad for third layer 4.75 mm ad dielectric coefficiet of substrate are.55, 4. ad 8. respectively. Puttig these parameters i above equatio ad calculate legth of the patch 6.8 mm ad value of width mm. The dimesio of the feed lie calculated directly from the lie Gauge of Zelad software for matchig 50 Ω, are 1 mm 4.47 mm ad bottom side of patch cosider to W g = W+6h ad L g = L+6h. The desig parameters of the patch are idicated i Table 3. Table 3: Desig parameters third layer atea at.44 GHz. Parameters Specificatio Uit Patch width W mm Patch legth L 6.8 mm Feed lie legth F 1 mm Strip width T 4.47 mm Groud Plae width W g mm Groud Plae legth L g 74.5 m m (f) Simulatio of atea with third layer by IE3D Maig use of the IE3D software directly ad select the Mgrid file, After the selectio of Mgrid file the ope basic parameter box ad select the grid size 0.05 mm, meshig frequecy 5 GHz ad cell per wavelegth = 0, the feed the some parameter before simulatio i this dialog box lie as top of the surface taig 1.6 mm for first layer 1.6 mm for secod layer ad for third layer 4.75 mm with dielectric costat taig.55, 4. ad 8. ad loss taget taig 0.05, 0. ad 0.5 respectively. After the feed above parameters draw the rectagular shape of legth 6.8 mm ad width mm. After draw the patch select the edge of the patch ad cut width of cut is 6 mm ad depth of cut is 6.5 mm, ow draw a straight lie with legth of 1 mm ad width 4.47 mm. After the completio of desigig select feed poit locatio ad feed at 9.1 mm i directio ad 0 mm i y directio. O the bottom side of the lower patch desig with 74.5 mm mm groud plae. Copyright to IJIRSET DOI: /IJIRSET

9 ISSN(Olie) : Fig. 5 Proposed atea with third layer at.44 GHz. Simulatio start with meshig frequecy 5 GHz ad the rage of simulatio frequecy 0-5 GHz with step size 0.01 select the scheme as classical ad eable adaptive symmetric matrix solver, simulatio egie set as IE3D Full-Wave EM Egie, eable curret distributio ad radiatio patter, the select o. After simulatio all data are save i software directory. (g) Desigig of Microstrip atea with forth layer The basic desig parameter as desig frequecy.44 GHz, thicess of the patch for first layer 1.6 mm, for secod layer 1.6 mm for third layer 4.75 mm ad 1.58 mm for forth layer with dielectric coefficiet of substrate is.55, 4., 8. ad respectively.. Puttig these parameters i above equatio ad calculate legth of the patch 6. mm ad value of width mm. The dimesio of the feed lie calculated directly from the lie Gauge of Zelad software for matchig 50 Ω, are 1 mm 4.47 mm ad bottom side of patch cosider to W g =W+6h ad L g =L+6h. The desig parameters of the patch are idicated i Table 4. Table 4: Desig parameters of forth layer atea at.44 GHz. Parameters Specificatio Uit Patch width W mm Patch legth L 6. mm Feed lie legth F 1 mm Strip width T 4.47 mm Groud Plae width W g mm Groud Plae legth L g mm (h) Simulatio of Atea with Forth Layer by IE3D Maig use of the IE3D software directly ad select the Mgrid file, After the selectio of Mgrid file the ope basic parameter box ad select the grid size 0.05 mm, meshig frequecy 5 GHz ad cell per wavelegth = 0, the feed the some parameter before simulatio i this dialog box lie as top of the surface taig 1.6 mm for first layer, 1.6 mm for secod layer, 4.75 for third layer ad 1.58 mm for forth layer with dielectric costat.55, 4., 8. ad respectively. Now taig loss taget are 0.05, 0., 0.5, ad respectively. After the feed above parameters draw the rectagular shape of legth 6. mm ad width mm. After draw the patch select the edge of the patch ad cut width of cut is 6 mm ad depth of cut is 6.5 mm, ow draw a straight lie with legth of 1 mm ad width 4.47 mm. After the completio of desigig select feed poit locatio ad feed at 9.1 mm i directio ad 0 mm i y directio. O the bottom side of the lower patch desig with mm mm metallic groud plae. Copyright to IJIRSET DOI: /IJIRSET

10 Retur loss (db) ISSN(Olie) : Fig. 6 Proposed atea with forth layer at.44 GHz. Simulatio start with meshig frequecy 5 GHz ad the rage of simulatio frequecy 0-5 GHz with step size 0.01 select the scheme as classical ad eable adaptive symmetric matrix solver, simulatio egie set as IE3D Full-Wave EM Egie, eable curret distributio ad radiatio patter, the select o. After simulatio all data are save i software directory. V. RESULTS AND DISCUSSIONS (a) Result Aalysis of Proposed Atea with Sigle Layer Ope the data of reflectio coefficiet with variatio of frequecy ad add to plot, result of this plot idicates i Figure With First layer frequecy (GHz) Fig. 7 Retur loss Vs frequecy plot of lie feed microstrip atea at.44 GHz. The applied wave travels ito the atea head ad spreads out udereath it. It the reaches the edge of the atea where some of the eergy reflects bac ad the rest of it radiates out ito free-space. The reflected wave the resoates bac ad forward iside the atea head util it dies away. Some of this resoat eergy returs to the soue, some is dissipated i the substrate ad the rest of it is radiated out ito free-space. If the frequecy of the wave is at a resoat poit the the electric fields aroud the edges have maximum amplitude. Thus the radiated electric fields will be at a maximum at resoat frequecies; from Figure 7 the resoace frequecy of microstrip atea is GHz. Aother calculatio the lower frequecy ad upper frequecy correspodig -10 db reflectio coefficiet are 1.6 GHz ad 1.43 GHz so the badwidth of 1.639%. Copyright to IJIRSET DOI: /IJIRSET

11 Retur loss(db) ISSN(Olie) : Table 5: Simulated result of proposed atea with first layer. Parameter Results Resoace Frequecy 1.3 GHz Retur loss db VSWR Badwidth % Gai dbi Directivity dbi Atea Efficiecy % Radiatio Efficiecy % (b) Result Aalysis of Proposed Atea with Secod Layer Ope the data of reflectio coefficiet with variatio of frequecy ad add to plot, result of this idicates i Figure 8.The applied wave travels ito the atea head ad spreads out udereath it. It the reaches the edge of the atea where some of the eergy reflects bac ad the rest of it radiates out ito free-space. The reflected wave the resoates bac ad forward iside the atea head util it dies away. Some of this resoat eergy returs to the soue, some is dissipated i the substrate ad the rest of it is radiated out ito free-space. If the frequecy of the wave is at a resoat poit the the electric fields aroud the edges have maximum amplitude. Thus the radiated electric fields will be at a maximum at resoat frequecies. The resoace frequecy of fiite groud plae atea is 1.38 GHz with db reflectio coefficiet. Aother calculatio the lower frequecy ad upper frequecy correspodig -10 db reflectio coefficiet are 1.7 GHz ad 1.48 GHz so the badwidth of 15.7% With First layer With Secod layer frequecy (GHz) Fig. 8 Retur loss Vs frequecy plot of proposed microstrip atea. Table 6: Simulated result of proposed atea with secod layer. Atea with Atea with Parameter first layer secod layer Resoace Frequecy (GHz) 1.3 GHz 1.38 GHz Retur loss (db) db db VSWR Badwidth % 15.7% Copyright to IJIRSET DOI: /IJIRSET

12 Retur loss (db) ISSN(Olie) : Gai dbi dbi Directivity dbi dbi Atea Efficiecy % 7.3% Radiatio Efficiecy % 78.17% (c) Result Aalysis of Proposed Atea with Third Layer Ope the data of reflectio coefficiet with variatio of frequecy ad add to plot, result of this idicates i Figure 9. Series1 Series Series frequecy (GHz) Fig. 9 Retur loss Vs frequecy plot of proposed microstrip atea. The applied wave travels ito the atea head ad spreads out udereath it. It the reaches the edge of the atea where some of the eergy reflects bac ad the rest of it radiates out ito free-space. The reflected wave the resoates bac ad forward iside the atea head util it dies away. Some of this resoat eergy returs to the soue, some is dissipated i the substrate ad the rest of it is radiated out ito free-space. If the frequecy of the wave is at a resoat poit the the electric fields aroud the edges have maximum amplitude. Thus the radiated electric fields will be at a maximum at resoat frequecies. From Figure 9 the resoace frequecy of microstrip atea is 1.48 GHz. Aother calculatio the lower frequecy ad upper frequecy correspodig -10 db reflectio coefficiet are 1.6 GHz ad 1.57 GHz so the badwidth of 1.9%. Table 7: Simulated result of proposed atea with third layer. Parameter Resoace Frequecy (GHz) Atea with first layer 1.3 GHz Atea with secod layer Atea with third layer 1.38 GHz 1.48 GHz Retur loss (db) db db db VSWR Badwidth % 15.7% 1.9% Gai dbi dbi dbi Directivity dbi dbi dbi Atea Efficiecy % 7.3% 75.4% Radiatio Efficiecy % 78.17% 73.% (d) Result Aalysis of Proposed Atea with Forth Layer Ope the data of reflectio coefficiet with variatio of frequecy ad add to plot, result of this idicates i Figure 10. The applied wave travels ito the atea head ad spreads out udereath it. It the reaches the edge of the atea where some of the eergy reflects bac ad the rest of it radiates out ito free-space. The reflected wave the resoates bac ad forward iside the atea head util it dies away. Some of this resoat eergy returs to the soue, some is Copyright to IJIRSET DOI: /IJIRSET

13 Retur loss (db) ISSN(Olie) : dissipated i the substrate ad the rest of it is radiated out ito free-space. If the frequecy of the wave is at a resoat poit the the electric fields aroud the edges have maximum amplitude. Thus the radiated electric fields will be at a maximum at resoat frequecies. From Figure 10 the resoace frequecy of microstrip atea is 1.46 GHz. Aother calculatio the lower frequecy ad upper frequecy correspodig -10 db reflectio coefficiet are 1.3 GHz ad 1.7 GHz so the badwidth of 33.%. VI. CONCLUSION Based o the computatioal, aalysis of the proposed Microstrip atea with differet layers of dielectric coefficiet ad calculate their effective dielectric ad the desig ad calculate differet parameters but i this paper we focus oly o badwidth calculatio. We have ehace badwidth of icreasig layer that is 1.639%, 15.7%, 1.9% ad 33.% respectively up to forth layer With first layer With Third layer frequecy (GHz) With Secod layer With Forth layer Fig.10 Retur loss Vs frequecy plot of proposed microstrip atea. Table 8: Simulated result of proposed atea with forth layer. Atea with Atea with Atea with Parameter first layer secod layer third layer Resoace Frequecy (GHz) Atea with forth layer 1.3 GHz 1.38 GHz 1.48 GHz 1.46 GHz Retur loss (db) db db db db VSWR Badwidth % 15.7% 1.9% 33.% Gai dbi dbi dbi 4.88 dbi Directivity dbi dbi dbi.89 dbi Atea Efficiecy % 7.3% 75.4% 80.% Radiatio Efficiecy % 78.17% 73.% 64.13% REFERENCES [1] Balais C. A., Atea Theory: Aalysis ad Desig, 3rd editio, Joh Wiley ad Sos, pp , 005. [] Garg R., P. Bhartia, I. Bahal, ad A. Ittipiboo, Microstrip Atea Desig Hadboo, Artech House, Bosto Lodo, 001. Copyright to IJIRSET DOI: /IJIRSET

14 ISSN(Olie) : [3] I. J. Bahl et. al, Desig of microstrip ateas covered with a dielectric layer, Ateas ad Propagatio, IEEE Trasactios, Vol. 30 (), Mar. 198, pp [4] Awadhesh. G. adu ad D.C. Dhubarya, Staced Square Microstrip Atea for 4G System, Iteratioal Joural of Advaced Reseah i Computer Sciece ad Electroics Egieerig (IJARCSEE), ISSN: , Vol. (8), August 013, pp [5] R. Afzalzadeh ad R. N. arear, Characteristics of a rectagular microstrip patch atea with protectig spaced dielectric superstrate, Microwave ad Optical Techology Letters, Vol. 7(), 1994, pp [6] Shavit, R., Dielectric cover effect o rectagular microstrip atea array, Ateas ad Propagatio, IEEE Trasactios, Vol. 4 (8), 1994, pp [7] N. Aouabdia, F. Beabdelaziz, F. Bouttout, C. Zebiri, F. Bemeddour, Resoat Frequecy of A Rectagular Microstrip Atea Depeds of the Dielectric Substrate Parameters Usig The Various types of Curret Expasio Fuctio, First Iteratioal Symposium o Cotrol, Commuicatios ad Sigal Processig, 004. IEEE xplore 004, pp [8] Asari, J. A., Sigh, P., & Yadav, N. P., Aalysis of widebad multilayer patch atea with two parasitic elemets, Microwave ad Optical Techology Letters, 009, Vol. 51, pp [9] Sharma, A., & Sigh, G., Desig of sigle pi shorted three-dielectric layered substrates rectagular patch microstrip atea for commuicatio system, Progress i Electromagetic Reseah Letters, 008, Vol., pp [10] Liu, Z. F., et al., A method for desigig broadbad microstrip atea i multilayered plaar structures, IEEE Trasactios o Ateas ad Propagatio, 1999, Vol. 47(9), pp [11] J. A. Asari, N. P. Yadav, Aurag Mishra, Prabhaar Sigh, Babau R. Vishvaarma, Aalysis of Multilayer Rectagular Patch Atea for Broadbad Operatio, Wireless Persoal Commuicatios, Jauary 01, Vol. 6(), pp [1] Oluyemi P. Falade, Yue Gao, Xiaodog Che, ad Clive Parii, Staced-Patch Dual-Polarized Atea for Triple-Bad Hadheld Termials, IEEE Ateas ad Wireless Propagatio Letters, 013, Vol. 1, pp [13] Samir Dev Gupta, M. C. Srivastava, Multilayer Microstrip Atea Quality Factor Optimizatio for Badwidth Ehacemet, Joural of Egieerig Sciece ad Techology, 01, Vol. 7(6), pp [14] Gupta, S.D.; ad Srivastava, M.C., Desig of frequecy agile multi dielectric microstrip atea for airbore applicatios, Iteratioal Joural of Microwave ad Optical Techology (IJMOT), 010, Vol. 5(5), pp [15] Bahl, I.; Bhartia, P.; ad Stuchly, S.S., Desig of microstrip ateas covered with a dielectric layer, IEEE Trasactios o Ateas ad Propagatio, 198, Vol. 30(), pp [16] J. Aguera, G. Fot, C. Puete, C. Borja, ad J. Soler, Multifrequecy microstrip patch atea usig multiple staced elemets, IEEE Microwave Wireless Compo. Lett., Mah, 003,Vol. 13(3), pp Copyright to IJIRSET DOI: /IJIRSET