Preferred Device Silicon Bidirectionl Thyristors Designed primrily for full-wve c control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever full-wve silicon gte controlled solid-stte devices re needed. Tric type thyristors switch from blocking to conducting stte for either polrity of pplied node voltge with positive or negtive gte triggering. Sensitive Gte Triggering Uniquely Comptible for Direct Coupling to TTL, HTL, CMOS nd Opertionl Amplifier Integrted Circuit Logic Functions Gte Triggering 4 Mode,B, 2N6073A,B, 2N6075A,B Blocking Voltges to 600 Volts All Diffused nd Glss Pssivted Junctions for Greter Prmeter Uniformity nd Stbility Smll, Rugged, Thermopd Construction for Low Therml Resistnce, High Het Dissiption nd Durbility Device Mrking: Device Type, e.g.,, Dte Code MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rting Symbol Vlue Unit *Pek Repetitive Off-Stte Voltge(1) (TJ = 40 to 110 C, Sine Wve, 50 to 60 Hz, Gte Open),B 2N6073A,B 2N6075A,B *On-Stte RMS Current (TC = 85 C) Full Cycle Sine Wve 50 to 60 Hz *Pek Non repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110 C) Circuit Fusing Considertions (t = 8.3 ms) *Pek Gte Power (Pulse Width µs, TC = 85 C) *Averge Gte Power (t = 8.3 ms, TC = 85 C) VDRM, VRRM 200 400 600 Volts IT(RMS) Amps ITSM 30 Amps I2t 3.7 A2s PGM 10 Wtts PG(AV) Wtt 1 2 3 TRIACS 4 AMPERES RMS 200 thru 600 VOLTS MT2 3 2 1 G TO 225AA (formerly TO 126) CASE 077 STYLE 5 PIN ASSIGNMENT Min Terminl 1 Min Terminl 2 Gte *Pek Gte Voltge (Pulse Width µs, TC = 85 C) VGM 5.0 Volts *Operting Junction Temperture Rnge TJ 40 to +110 *Storge Temperture Rnge Tstg 40 to +150 Mounting Torque (6-32 Screw)(2) 8.0 in. lb. *Indictes JEDEC Registered Dt. (1) VDRM nd VRRM for ll types cn be pplied on continuous bsis. Blocking voltges shll not be tested with constnt current source such tht the voltge rtings of the devices re exceeded. (2) Torque rting pplies with use of compression wsher. Mounting torque in excess of 6 in. lb. does not pprecibly lower cse-to-sink therml resistnce. Min terminl 2 nd hetsink contct pd re common. C C ORDERING INFORMATION Device Pckge Shipping TO225AA 500/Box 2N6071B TO225AA 500/Box 2N6073A TO225AA 500/Box 2N6073B TO225AA 500/Box 2N6075A TO225AA 500/Box 2N6075B TO225AA 500/Box Preferred devices re recommended choices for future use nd best overll vlue. Semiconductor Components Industries, LLC, 2000 My, 2000 Rev. 3 1 Publiction Order Number: 2N6071/D
/B THERMAL CHARACTERISTICS Chrcteristic Symbol Mx Unit *Therml Resistnce, Junction to Cse RθJC 3.5 C/W Therml Resistnce, Junction to Ambient RθJA 75 C/W Mximum Led Temperture for Soldering Purposes 1/8 from Cse for 10 Seconds TL 260 C ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted; Electricls pply in both directions) Chrcteristic Symbol Min Typ Mx Unit OFF CHARACTERISTICS *Pek Repetitive Blocking Current (VD = Rted VDRM, VRRM; Gte Open) TJ = 25 C TJ = 110 C ON CHARACTERISTICS *Pek On-Stte Voltge(1) (ITM = 6 A Pek) IDRM, IRRM 10 2 µa VTM 2 Volts *Gte Trigger Voltge (Continuous dc) (Min Terminl Voltge = 12 Vdc, RL = 100 Ohms, TJ = 40 C) All Qudrnts Gte Non Trigger Voltge (Min Terminl Voltge = 12 Vdc, RL = 100 Ohms, TJ = 110 C) All Qudrnts *Holding Current (Min Terminl Voltge = 12 Vdc, Gte Open, Inititing Current = 1 Adc) Turn-On Time (ITM = 14 Adc, IGT = 100 dc) (TJ = 40 C) (TJ = 25 C) VGT VGD IH 1.4 2.5 0.2 30 15 Volts Volts tgt 1.5 µs QUADRANT (Mximum Vlue) Gte Trigger Current (Continuous dc) (Min Terminl Voltge = 12 Vdc, RL = 100 ohms) Type IGT @ TJ I II III IV +25 C 5 5 5 10 2N6073A 2N6075A 40 C 20 20 20 30 DYNAMIC CHARACTERISTICS Criticl Rte of Rise of Commuttion Voltge @ VDRM, TJ = 85 C, Gte Open, ITM = 5.7 A, Exponentil Wveform, Commutting di/dt = A/ms *Indictes JEDEC Registered Dt. (1) Pulse Test: Pulse Width ms, Duty Cycle 2%. 2N6071B +25 C 3 3 3 5 2N6073B 2N6075B 40 C 15 15 15 20 dv/dt(c) 5 V/µs 2
/B SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 0 V VEE 14 MC7400 4 7 VEE = 5.0 V + 510 Ω LOAD 115 VAC 60 Hz Trigger devices re recommended for gting on Trics. They provide: 1. Consistent predictble turn-on points. 2. Simplified circuitry. 3. Fst turn-on time for cooler, more efficient nd relible opertion. Voltge Current Chrcteristic of Trics (Bidirectionl Device) + Current Symbol VDRM IDRM VRRM IRRM Prmeter Pek Repetitive Forwrd Off Stte Voltge Pek Forwrd Blocking Current Pek Repetitive Reverse Off Stte Voltge Pek Reverse Blocking Current IRRM t VRRM on stte IH VTM Qudrnt 1 MinTerminl 2 + VTM IH Mximum On Stte Voltge Holding Current IH off stte + Voltge IDRM t VDRM Qudrnt 3 MinTerminl 2 V TM 3
/B Qudrnt Definitions for Tric MT2 POSITIVE (Positive Hlf Cycle) + (+) MT2 (+) MT2 Qudrnt II ( ) IGT GATE (+) IGT GATE Qudrnt I REF REF IGT + IGT ( ) MT2 ( ) MT2 Qudrnt III ( ) IGT GATE (+) IGT GATE Qudrnt IV REF REF MT2 NEGATIVE (Negtive Hlf Cycle) All polrities re referenced to. With in phse signls (using stndrd AC lines) qudrnts I nd III re used. SENSITIVE GATE LOGIC REFERENCE IC Logic Functions Firing Qudrnt I II III IV TTL HTL CMOS (NAND) 2N6071B 2N6071B CMOS (Buffer) 2N6071B 2N6071B Opertionl Amplifier Zero Voltge Switch 4
/B T C, CASE TEMPERATURE ( C) 110 100 90 80 α α = 30 60 90 120 180 dc T C, CASE TEMPERATURE ( C) 110 100 90 80 α = 30 60 120 180 dc 90 α = CONDUCTION ANGLE 70 0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) α = CONDUCTION ANGLE 70 0 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Averge Current Derting Figure 2. RMS Current Derting P (AV), AVERAGE POWER (WATTS) 8.0 6.0 α = CONDUCTION ANGLE α = 30 60 90 120 180 dc P (AV), AVERAGE POWER (WATTS) 8.0 6.0 α = CONDUCTION ANGLE 120 α = 180 90 60 dc 30 0 0 0 0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 3. Power Dissiption IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 4. Power Dissiption, GATE TRIGGER VOLTAGE (NORMALIZED) VGT OFF-STATE VOLTAGE = 12 Vdc ALL MODES 0.7 60 40 20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE ( C) 100 Figure 5. Typicl Gte Trigger Voltge 120 140, GATE TRIGGER CURRENT (NORMALIZED) IGT 0.7 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 60 40 20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE ( C) Figure 6. Typicl Gte Trigger Current 5
/B ITM, ON-STATE CURRENT (AMP) 40 30 20 10 7.0 5.0 TJ = 110 C TJ = 25 C IH, HOLDING CURRENT (NORMALIZED) 0.7 60 40 20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE ( C) GATE OPEN APPLIES TO EITHER DIRECTION Figure 8. Typicl Holding Current 0.7 0.2 0.1 0 5.0 VTM, ON-STATE VOLTAGE (VOLTS) PEAK SINE WAVE CURRENT (AMP) 34 32 30 28 26 24 22 TJ = 40 to +110 C f = 60 Hz 20 18 16 14 5.0 7.0 10 NUMBER OF FULL CYCLES Figure 7. Mximum On Stte Chrcteristics Figure 9. Mximum Allowble Surge Current ZθJC(t), TRANSIENT THERMAL IMPEDANCE ( C/W) 10 5.0 MAXIMUM TYPICAL 0.2 0.1 0.1 0.2 5.0 10 20 50 100 200 500 k k 5.0 k 10 k t, TIME (ms) Figure 10. Therml Response 6
/B PACKAGE DIMENSIONS TO 225AA (formerly TO 126) CASE 077 09 ISSUE W H Q B U 1 2 3 F A K V G S D 2 PL M C J R 0.25 (0.010) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.425 0.435 10.80 14 B 0.295 05 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 1 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 9 0.63 K 75 0.655 14.61 16.63 M 5 TYP 5 TYP Q 0.148 0.158 3.76 1 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 2 0.25 (0.010) M A M B M STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE 7
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