2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

Size: px
Start display at page:

Download "2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS"

Transcription

1 General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 6. Vdc Collector Current Continuous I C 6 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D T J, T stg 55 to +15 mw mw/ C W mw/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 2 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C TO92 CASE 29 STYLE 1 2 BASE COLLECTOR 3 1 EMITTER STRAIGHT LEAD BULK PACK MARKING DIAGRAM 2N 441 AYWW BENT LEAD TAPE & REEL AMMO PACK 2N441 = Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2 February, 2 Rev. 4 1 Publication Order Number: 2N441/D

2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = 1. madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C =.1 madc, I E = ) V (BR)CBO 6 Vdc EmitterBase Breakdown Voltage (I E =.1 madc, I C = ) V (BR)EBO 6. Vdc Base Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I BEV.1 Adc Collector Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I CEX.1 Adc ON CHARACTERISTICS (Note 1) DC Current Gain (I C =.1 madc, V CE = 1. Vdc) (I C = 1. madc, V CE = 1. Vdc) (I C = madc, V CE = 1. Vdc) (I C = 15 madc, V CE = 1. Vdc) (I C = 5 madc, V CE = Vdc) h FE CollectorEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V CE(sat).4.75 Vdc BaseEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V BE(sat) Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 2 madc, V CE = Vdc, f = MHz) f T 25 MHz CollectorBase Capacitance (V CB = Vdc, I E =, f = 1. MHz) C cb 6.5 pf EmitterBase Capacitance (V EB =.5 Vdc, I C =, f = 1. MHz) C eb 3 pf Input Impedance (I C = 1. madc, V CE = Vdc, f = 1. khz) h ie k Voltage Feedback Ratio (I C = 1. madc, V CE = Vdc, f = 1. khz) h re.1 8. X 4 SmallSignal Current Gain (I C = 1. madc, V CE = Vdc, f = 1. khz) h fe 4 5 Output Admittance (I C = 1. madc, V CE = Vdc, f = 1. khz) h oe 1. 3 mhos SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V BE = Vdc, t d 15 ns Rise Time I C = 15 madc, I B1 = 15 madc) t r 2 ns Storage Time (V CC = 3 Vdc, I C = 15 madc, t s 225 ns Fall Time I B1 = I B2 = 15 madc) t f 3 ns 1. Pulse Test: Pulse Width 3 s, Duty Cycle %. ORDERING INFORMATION Device Package Shipping 2N441 TO92 5 Units / Bulk 2N441G TO92 (PbFree) 5 Units / Bulk 2N441RLRA TO92 2 / Tape & Reel 2N441RLRAG 2N441RLRMG TO92 (PbFree) TO92 (PbFree) 2 / Tape & Reel 2 / Tape & Ammo Box 2N441RLRP TO92 2 / Tape & Ammo Box 2N441RLRPG TO92 (PbFree) 2 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 SWITCHING TIME EQUIVALENT TEST CIRCUITS +16 V 1. to s, DUTY CYCLE % + 3 V V 1. to s, DUTY CYCLE % + 3 V 2 - V < ns 1. k C S * < pf -14 V < 2 ns 1. k C S * < pf Scope rise time < 4. ns - 4. V *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time TRANSIENT CHARACTERISTICS 25 C C CAPACITANCE (pf) C obo Q, CHARGE (nc) V CC = 3 V I C /I B = Q T 3. C cb.3.2 Q A REVERSE VOLTAGE (VOLTS) Figure 3. Capacitances Figure 4. Charge Data 7 5 I C /I B = 7 5 t r V CC = 3 V I C /I B = t, TIME (ns) 3 2 t V CC = 3 V t V CC = V 3 t V EB = V t V EB = 2 t, TIME (ns) t f Figure 5. TurnOn Time Figure 6. Rise and Fall Times 3

4 ts, STORAGE TIME (ns) Figure 7. Storage Time t s = t s - 1/8 t f I B1 = I B2 I C /I B = to 2 tf, FALL TIME (ns) I C /I B = I C /I B = Figure 8. Fall Time V CC = 3 V I B1 = I B2 SMALLSIGNAL CHARACTERISTICS NOISE FIGURE V CE = Vdc, T A = 25 C; Bandwidth = 1. Hz NF, NOISE FIGURE (db) I C = 1. ma, R S = 15 I C = 5 A, R S = 2 I C = A, R S = k I C = 5 A, R S = 4. k R S = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) f = 1. khz I C = 5 A I C = A I C = 5 A I C = 1. ma f, FREQUENCY (khz) Figure 9. Frequency Effects k k k k 2 k 5 k k R S, SOURCE RESISTANCE (OHMS) Figure. Source Resistance Effects 4

5 h PARAMETERS V CE = Vdc, f = 1. khz, T A = 25 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were selected from the 2N441 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hfe, CURRENT GAIN N441 UNIT 1 2N441 UNIT 2 h ie, INPUT IMPEDANCE (OHMS) 5 k 2 k k k k 1. k 2N441 UNIT 1 2N441 UNIT Figure 11. Current Gain Figure 12. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ) N441 UNIT 1 2N441 UNIT h oe, OUTPUT ADMITTANCE ( mhos) N441 UNIT 1 2N441 UNIT 2 Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5

6 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN V CE = 1. V V CE = V T J = 125 C 25 C - 55 C Figure 15. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = 1. ma T J = 25 C ma ma 5 ma I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region 1..8 T J = 25 C V I C /I B = +.5 VC for V CE(sat) VOLTAGE (VOLTS).6.4 V V CE = V COEFFICIENT (mv/ C) V I C /I B = - VB for V BE Figure 17. On Voltages Figure 18. Temperature Coefficients 6

7 PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K V C L N SECTION XX R N V P R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A B C D.4.54 G J.39.5 K N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your loca Sales Representative 2N441/D

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators 9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating

More information

NUD4011. Low Current LED Driver

NUD4011. Low Current LED Driver NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive

More information

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

MC14008B. 4-Bit Full Adder

MC14008B. 4-Bit Full Adder 4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast

More information

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All

More information

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,

More information

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide

More information

NUD4001, NSVD4001. High Current LED Driver

NUD4001, NSVD4001. High Current LED Driver NUD, NSVD High Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage AC DC applications. V, V or V. An external resistor allows the circuit designer to

More information

C106 Series. Sensitive Gate Silicon Controlled Rectifiers

C106 Series. Sensitive Gate Silicon Controlled Rectifiers C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;

More information

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR 3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage

More information

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

NE592 Video Amplifier

NE592 Video Amplifier Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external

More information

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional* .6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS 1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

More information

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,

More information

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional .AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V

MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,

More information

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective

More information

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices

More information

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

MC14175B/D. Quad Type D Flip-Flop

MC14175B/D. Quad Type D Flip-Flop Quad Type D Flip-Flop The MC475B quad type D flipflop is cotructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each of the four flipflops is positiveedge triggered

More information

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3 phase alternators. It drives an external

More information

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE 3.3 /250 ma, 5.0 /100 ma Micropower Low Dropout Regulator with The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 primary output ( OUT1 ) supplies up to 250 ma while

More information

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.

More information

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Dual Line CAN Bus Protector The SZ/NUP215L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides

More information

NS3L500. 3.3V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch

NS3L500. 3.3V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch 3.3V, 8-Channel, : Gigabit Ethernet LAN Switch with LED Switch The NS3L500 is a 8 channel : LAN switch with 3 additional built in SPDT switches for LED routing. This switch is ideal for Gigabit LAN applications

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military

More information

CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array

CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A 04SO has been designed to provide ESD protection for electronic components or subsystems requiring

More information

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC

More information

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.

More information

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03. DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS

More information

MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer

MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer -of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input

More information

NCT65. Remote Trip Point Temperature Sensor with Overtemperature Shutdown

NCT65. Remote Trip Point Temperature Sensor with Overtemperature Shutdown Remote Trip Point Temperature Sensor with Overtemperature Shutdown Description The is a low power temperature monitor housed in an MSOP8 package. It monitors the temperature of a remote thermal diode.

More information

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150

More information

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

LM317, NCV317. 1.5 A Adjustable Output, Positive Voltage Regulator

LM317, NCV317. 1.5 A Adjustable Output, Positive Voltage Regulator , NCV317 A able Output, Positive Voltage Regulator The is an adjustable 3terminal positive voltage regulator capable of supplying in excess of A over an output voltage range of 1.2 V to 37 V. This voltage

More information

MC74HC132A. Quad 2-Input NAND Gate with Schmitt-Trigger Inputs. High Performance Silicon Gate CMOS

MC74HC132A. Quad 2-Input NAND Gate with Schmitt-Trigger Inputs. High Performance Silicon Gate CMOS MC74HC32A Quad 2-Input NAND Gate with Schmitt-Trigger Inputs High Performance Silicon Gate CMOS The MC74HC32A is identical in pinout to the LS32. The device inputs are compatible with standard CMOS outputs;

More information

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional 1SMBAT3G Series, SZ1SMBAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMB series is designed to protect voltage sensitive components from high voltage, high energy

More information

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.

More information

STF202-22. USB Filter with ESD Protection

STF202-22. USB Filter with ESD Protection STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, ellular phones,

More information

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. 65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by ULN283/D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or

More information

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION The TTL/MSI SN74LS151 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS151 can be used as a universal function

More information

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21. DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved

More information

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in

More information

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated

More information

BC807; BC807W; BC327

BC807; BC807W; BC327 Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W

More information

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS

More information

http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM PDIP 16 P SUFFIX CASE 648 DIP PIN ASSIGNMENT ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM PDIP 16 P SUFFIX CASE 648 DIP PIN ASSIGNMENT ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 The MC10 is a dual master slave dc coupled J K flip flop. Asynchro nous set (S) and reset (R) are provided. The set and reset inputs override the clock. A common clock is provided with separate J K inputs.

More information

NLX1G74. Single D Flip-Flop

NLX1G74. Single D Flip-Flop NG74 Single D Flip-Flop The NG74 is a high performance, full function edge triggered D Flip Flop in ultra small footprint. The NG74 input structures provide protection when voltages up to 7. are applied,

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

TIP31, TIP32 High Power Bipolar Transistor

TIP31, TIP32 High Power Bipolar Transistor Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

NPN wideband transistor in a SOT89 plastic package.

NPN wideband transistor in a SOT89 plastic package. SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING

More information

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications Introduction This update includes additional information on 220 V ac lighting circuits with the addition of ON Semiconductors

More information

MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS

MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS NPN Silicon Power Darlington Transistors The Darlington transistors are designed for highvoltage power switching in inductive circuits. Features These Devices are PbFree and are RoHS Compliant Applications

More information

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak

More information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC 2 3 6 5 4 B C E Isolation test voltage: 5300

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C

More information

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages. Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA

More information

NLSX4378. 4-Bit 24 Mb/s Dual-Supply Level Translator

NLSX4378. 4-Bit 24 Mb/s Dual-Supply Level Translator 4-Bit 24 Mb/s Dual-Supply Level Translator The NLSX4378 is a 4 bit configurable dual supply bidirectional auto sensing translator that does not require a directional control pin. The I/O and I/O ports

More information

MC33039, NCV33039. Closed Loop Brushless Motor Adapter

MC33039, NCV33039. Closed Loop Brushless Motor Adapter MC3339, NCV3339 Closed Loop Brushless Motor Adapter The MC3339 is a high performance closedloop speed control adapter specifically designed for use in brushless DC motor control systems. Implementation

More information

BC107/ BC108/ BC109 Low Power Bipolar Transistors

BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth

More information

Taping code. Reel size (mm) 2SCR513P MPT3 4540 T100 180 12 1,000 NC

Taping code. Reel size (mm) 2SCR513P MPT3 4540 T100 180 12 1,000 NC 2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 50 I C.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3)

More information