BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
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1 BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage CBO 5 dc 3 EMITTER Emitter Base oltage EBO 5. dc Collector Current Continuous I C 8 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C P D P D.5 2 mw mw/ C W mw/ C TO92 CASE 29 STYLE 7 Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS T J, T stg 55 to +5 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 2 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM BC33 7xx AYWW BC337xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week =PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 23 November, 23 Rev. 8 Publication Order Number: BC337/D
2 BC337, BC33725, BC3374 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (I C = ma, I B = ) (BR)CEO 45 dc CollectorEmitter Breakdown oltage (I C = A, I E = ) EmitterBase Breakdown oltage (I E = A, I C = ) Collector Cutoff Current ( CB = 3, I E = ) Collector Cutoff Current ( CE = 45, BE = ) Emitter Cutoff Current ( EB = 4., I C = ) (BR)CES 5 dc (BR)EBO 5. dc I CBO nadc I CES nadc I EBO nadc ON CHARACTERISTICS DC Current Gain (I C = ma, CE = ) BC337 BC33725 BC3374 (I C = 3 ma, CE = ) BaseEmitter On oltage (I C = 3 ma, CE = ) CollectorEmitter Saturation oltage (I C = 5 ma, I B = 5 ma) h FE BE(on).2 dc CE(sat).7 dc SMALLSIGNAL CHARACTERISTICS Output Capacitance ( CB =, I E =, f = MHz) CurrentGain Bandwidth Product (I C = ma, CE = 5., f = MHz) C ob 5 pf f T 2 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. r(t), NORMALIZED EFFECTIE TRANSIENT THERMAL RESISTANCE D =.5.. SINGLE PULSE SINGLE PULSE JC (t) = (t) JC JC = C/W MAX JA (t) = r(t) JA JA = 375 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) JC (t) t, TIME (SECONDS) Figure. Thermal Response P (pk) t t2 DUTY CYCLE, D = t /t 2 2
3 BC337, BC33725, BC3374 dc T A = 25 C s ms T J = 35 C dc T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED CEO ) 3. 3 CE, COLLECTOR-EMITTER OLTAGE s Figure 2. Active Region Safe Operating Area hfe, DC CURRENT GAIN CE = T J = 25 C. I C, COLLECTOR CURRENT (MA) Figure 3. DC Current Gain CE, COLLECTOR-EMITTER OLTAGE (OLTS) T J = 25 C I C = ma ma 3 ma 5 ma.. I B, BASE CURRENT (ma) Figure 4. Saturation Region, OLTAGE (OLTS) T A = 25 C I C /I B = I C /I B = CE = Figure 5. On oltages, TEMPERATURE COEFFICIENTS (m/ C) θ C for CE(sat) B for BE Figure 6. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob. R, REERSE OLTAGE (OLTS) Figure 7. Capacitances 3
4 BC337, BC33725, BC3374 ORDERING INFORMATION Device Marking Package Shipping BC337G 7 5 Units / Bulk BC337RLG 7 2 / Tape & Reel BC33725G Units / Bulk BC33725RLG / Tape & Reel BC33725RLRAG 725 TO92 (PbFree) 2 / Tape & Reel BC33725ZLG / Ammo Box BC3374G 74 5 Units / Bulk BC3374RLG 74 2 / Tape & Reel BC3374ZLG 74 2 / Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 4
5 BC337, BC33725, BC3374 PACKAGE DIMENSIONS TO92 (TO226) CASE 29 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K C L N P SECTION XX R N R T SEATING PLANE P G A X X B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A B C D.4.54 G J.39.5 K N P.5 4. R STYLE 7: PIN. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada [email protected] N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BC337/D
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Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020
2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C
Taping code. Reel size (mm) 2SCR513P MPT3 4540 T100 180 12 1,000 NC
2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 50 I C.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3)
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438
Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C
Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C
Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)
STF202-22. USB Filter with ESD Protection
STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, ellular phones,
MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m
MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MC33039, NCV33039. Closed Loop Brushless Motor Adapter
MC3339, NCV3339 Closed Loop Brushless Motor Adapter The MC3339 is a high performance closedloop speed control adapter specifically designed for use in brushless DC motor control systems. Implementation
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC8 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm High breakdown voltage: V CEO = 6 V
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648 SOIC D SUFFIX CASE 751B
The SN74LS47 are Low Power Schottky BCD to 7-Segment Decoder/ Drivers consisting of NAND gates, input buffers and seven AND-OR-INVERT gates. They offer active LOW, high sink current outputs for driving
BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak
BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C
Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor
NLSX4378. 4-Bit 24 Mb/s Dual-Supply Level Translator
4-Bit 24 Mb/s Dual-Supply Level Translator The NLSX4378 is a 4 bit configurable dual supply bidirectional auto sensing translator that does not require a directional control pin. The I/O and I/O ports
2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description
Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear
MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS
NPN Silicon Power Darlington Transistors The Darlington transistors are designed for highvoltage power switching in inductive circuits. Features These Devices are PbFree and are RoHS Compliant Applications
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
LB1836M. Specifications. Monolithic Digital IC Low-Saturation Bidirectional Motor Driver for Low-Voltage Drive. Absolute Maximum Ratings at Ta = 25 C
Ordering number : EN397F LB136M Monolithic Digital IC Low-Saturation Bidirectional Motor Driver for Low-Voltage Drive http://onsemi.com Overview The LB136M is a low-saturation two-channel bidirectional
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
Device Application Topology Efficiency Input Power Power Factor THD NSIC2030JB, NSIC2050JB R4 Q2 Q1 R9
120 V AC, Low Cost, Dimmable, Linear, Parallel to Series with Switch In CCR LED Lighting Circuit DESIGN NOTE Table 1. DEVICE DETAILS Device Application Topology Efficiency Input Power Power Factor THD
TIP31, TIP32 High Power Bipolar Transistor
Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.
Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
AND9190/D. Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE
Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE Introduction This application note applies to the ON Semiconductor Interline CCD Image Sensors listed in Table 1. On these
AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE
Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications Introduction This update includes additional information on 220 V ac lighting circuits with the addition of ON Semiconductors
AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in
Spread Spectrum Clock Generator
Spread Spectrum Clock Generator Features Generates a 1x (PCS3P5811), x (PCS3P581) and 4x() low EMI spread spectrum clock of the input frequency Provides up to 15dB of EMI suppression Input Frequency: 4MHz
