MBR0540T1G NRVB0540T1G MBR0540T3G NRVB0540T3G. Surface Mount Schottky Power Rectifier. SOD 123 Power Surface Mount Package

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1 MB54T1G, NVB54T1G, MB54T3G, NVB54T3G Surface Mount Schottky Power ectifier Power Surface Mount Package The Schottky Power ectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. Features Guardring for Stress Protection Very Low Forward Voltage Epoxy Meets UL 94 in Package Designed for Optimal utomated Board ssembly EC Q11 Qualified and PPP Capable NVB Prefix for utomotive and Other pplications equiring Unique Site and Control Change equirements ll Packages are Pb Free* Mechanical Characteristics Device Marking: B4 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy Molded Finish: ll External Surfaces Corrosion esistant and Terminal Leads are eadily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 26C max. for 1 Seconds ESD ating: Human Body Model = 3B Machine Model = C B4 M SCHOTTKY BIE ECTIFIE.5 MPEES, 4 VOLTS CSE 425 STYLE 1 MKING DIGM = Device Code = Date Code = Pb Free Package (Note: Microdot may be in either location) Device Package Shipping MB54T1G NVB54T1G MB54T3G NVB54T3G 1 ODEING INFOMTION B4M 3,/Tape & eel (8 mm Tape, 7 eal) 3,/Tape & eel (8 mm Tape, 7 eal) 1,/Tape & eel (8 mm Tape, 13 eal) 1,/Tape & eel (8 mm Tape, 13 eal) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and eel Packaging Specifications Brochure, BD811/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques eference Manual, SOLDEM/D. Semiconductor Components Industries, LLC, 212 January, 212 ev. 7 1 Publication Order Number: MB54T1/D

2 MB54T1G, NVB54T1G, MB54T3G, NVB54T3G MXIMUM TINGS Peak epetitive everse Voltage Working Peak everse Voltage DC Blocking Voltage verage ectified Forward Current (t ated V, T C = 115C) ating Symbol Value Unit V M V WM V I O.5 4 V Peak epetitive Forward Current (t ated V, Square Wave, 2 khz, T C = 115C) Non epetitive Peak Surge Current (Surge pplied at ated Load Conditions Halfwave, Single Phase, 6 Hz) I FM 1. I FSM 5.5 Storage/Operating Case Temperature ange T stg, T C 55 to +15 C Operating Junction Temperature T J 55 to +15 C Voltage ate of Change (ated V, ) Stresses exceeding Maximum atings may damage the device. Maximum atings are stress ratings only. Functional operation above the ecommended Operating Conditions is not implied. Extended exposure to stresses above the ecommended Operating Conditions may affect device reliability. dv/dt 1 V/s THEML CHCTEISTICS Thermal esistance Junction to Lead (Note 1) Thermal esistance Junction to mbient (Note 2) 1. Mounted with minimum recommended pad size, PC Board F inch square pad size (1 X.5 inch for each lead) on F4 board. Characteristic Symbol Value Unit tjl 118 tja 26 C/W ELECTICL CHCTEISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) v F T J = 1C V (i F =.5 ) (i F = 1 ) Maximum Instantaneous everse Current (Note 3) I T J = 1C (V = 4 V) (V = 2 V) 3. Pulse Test: Pulse Width 25 s, Duty Cycle 2.% , 5, i F, INSTNTNEOUS FOWD CUENT (MPS) C 1. T J = 125C T J = -4C T J = 1C v F, INSTNTNEOUS FOWD VOLTGE (VOLTS) Figure 1. Typical Forward Voltage I F, INSTNTNEOUS FOWD CUENT (MPS) T J = 125C T J = 1C V F, MXIMUM INSTNTNEOUS FOWD VOLTGE (VOLTS) Figure 2. Maximum Forward Voltage 2

3 I I MB54T1G, NVB54T1G, MB54T3G, NVB54T3G, EVESE CUENT (MPS) 1E-3 1E-3 1.E-3 1E-6 1E-6 1.E-6 T J = 125C T J = 1C, MXIMUM EVESE CUENT (MPS) 1E-3 1E-3 1.E-3 1E-6 1E-6 1.E-6 T J = 1C 1E V, EVESE VOLTGE (VOLTS) Figure 3. Typical everse Current 4 1E V, EVESE VOLTGE (VOLTS) Figure 4. Maximum everse Current 4 I O, VEGE FOWD CUENT (MPS) dc SQUE WVE I pk /I o = I pk /I o = 5 I pk /I o = 1 I pk /I o = FEQ = 2 khz P FO, VEGE POWE DISSIPTION (WTTS) SQUE WVE dc I pk /I o = I pk /I o = 5 I pk /I o = 1 I pk /I o = T L, LED TEMPETUE (C) Figure 5. Current Derating I O, VEGE FOWD CUENT (MPS) Figure 6. Forward Power Dissipation C, CPCITNCE (pf) C/W C/W C/W C/W V, EVESE VOLTGE (VOLTS) V, DC EVESE VOLTGE (VOLTS) Figure 7. Capacitance, DETED OPETING TEMPETUE ( C) J T tja = 118C/W Figure 8. Typical Operating Temperature Derating* * everse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T J therefore must include forward and reverse power effects. The allowable operating T J may be calculated from the equation: T J = T Jmax r(t)(pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable T J due to reverse bias under DC conditions only and is calculated as T J = T Jmax r(t)pr, where r(t) = thja. For other power applications further calculations must be performed. 3

4 MB54T1G, NVB54T1G, MB54T3G, NVB54T3G (T), TNSIENT THEML ESISTNCE (NOMLIZED) 1E+ 5% 2% 1% 1E-1 5.% 2.% 1.% 1E-2 1E-3.1 tjl(t) = tjl*r(t) , T, TIME (s) Figure 9. Thermal esponse Junction to Lead (T), TNSIENT THEML ESISTNCE (NOMLIZED) 1E+ 5% 2% 1E-1 1% 5.% 2.% 1E-2 1.% tjl(t) = tjl*r(t) 1E , T, TIME (s) Figure 1. Thermal esponse Junction to mbient 4

5 MB54T1G, NVB54T1G, MB54T3G, NVB54T3G PCKGE DIMENSIONS CSE ISSUE G H E D 1 ÂÂÂÂ ÂÂÂÂ 2 b E C 1 L NOTES: 1. DIMENSIONING ND TOLENCING PE NSI Y14.5M, CONTOLLING DIMENSION: INCH. MILLIMETES DIM MIN NOM MX b c D E H E L STYLE 1: PIN 1. CTHODE 2. NODE INCHES MIN NOM MX SOLDEING FOOTPINT* SCLE 1:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques eference Manual, SOLDEM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ODEING INFOMTION LITETUE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales epresentative MB54T1/D