Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM = 9 9 A Controlled rectifiers V TO =.99 V AC drives r T =.53 m Types 5STP T1 Conditions: V RRM, V DRM 1 V T j = - 15 C, half sine waveform, f = 5 Hz Mechanical Data F m Mounting force 9 ± 3 kn m Weight.11 kg D S D a Surface creepage distance Air strike distance 1. mm 5.5 mm Fig. 1 Case ABB s.r.o. Novodvorska 178/138a, 1 1 Praha, Czech Republic tel.: + 1 3 5, http://www.abb.com/semiconductors TS - T/17/a Jul-11 1 of 7
Maximum Ratings Maximum Limits Unit V RRM V DRM I TRMS I TAVm I TSM I TSM I t I t (di T /dt) cr (dv D /dt) cr Repetitive peak reverse and off-state voltage T j = - 15 C RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz Peak non-repetitive surge half sine pulse, V R = V Peak non-repetitive surge half sine pulse, V R =.7 V RRM Limiting load integral half sine pulse, V R = V Limiting load integral half sine pulse, V R =.7 V RRM Critical rate of rise of on-state current I T = I TAVm, half sine waveform, f = 5 Hz, V D = /3 V DRM, t r =.3 µs, I GT = A Critical rate of rise of off-state voltage V D = /3 V DRM t p = 1 ms t p = 1 ms t p = 1 ms t p = 1 ms 1 V 1 7 A 1 A 9 9 1 7 9 8 5 9 7 31 3 A A A s A s A/µs 1 V/µs P GAVm Maximum average gate power losses 3 W I FGM Peak gate current 1 A V FGM Peak gate voltage 1 V V RGM Reverse peak gate voltage 1 V T jmin - T jmax Operating temperature range - 15 C T stgmin - T stgmax Storage temperature range - 15 C Unless otherwise specified T j = 15 C TS - T/17/a Jul-11 of 7
Characteristics Value Unit min. typ. max. V TM Maximum peak on-state voltage I TM = 1 A 1.5 V V T Threshold voltage.99 V r T I DM I RM t gd t q Q rr Slope resistance I T1 = 8 A, I T = 399 A Peak off-state current V D = V DRM Peak reverse current V R = V RRM Delay time T j = 5 C, V D =. V DRM, I TM = I TAVm, t r =.3 µs, I GT = A Turn-off time I T = A, di T /dt = 1.5 A/µs, V D = /3 V DRM, dv D /dt = 5 V/µs Recovery charge the same conditions as at t q.53 m 3 ma 3 ma µs 15 µs 1 µc I H Holding current T j = 5 C T j = 15 C I L Latching current T j = 5 C T j = 15 C 15 8 5 35 ma ma V GT Gate trigger voltage V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C.5 3 V I GT Gate trigger current V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C 1 5 5 15 ma Unless otherwise specified T j = 15 C TS - T/17/a Jul-11 3 of 7
Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case. K/kW double side cooling anode side cooling 7. cathode side cooling 118. Thermal resistance case to heatsink 1. K/kW double side cooling single side cooling. Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 5 i 1 R (1 exp( t / )) Conditions: F m = 9 ± 3 kn, Double side cooled i Correction for periodic waveforms 18 sine: add. K/kW 18 rectangular: add. K/kW 1 rectangular: add 9. K/kW rectangular: add 15.5 K/kW i i 1 3 5 R i ( K/kW ) 8.8 1.7 1. 3.7.1 i ( s ).3.859.157.37.7 Transient thermal impedance junction to case Z thjc ( K/kW ) 5 5 35 3 5 15 1 5,1,1,1 1 1 Square wave pulse duration t d ( s ) Fig. Dependence transient thermal impedance junction to case on square pulse TS - T/17/a Jul-11 of 7
Maximum On-state Characteristics Analytical function for on-state characteristics: T j ( C ) A B C D 5.739E-1 3.73E- -.519E-3 7.9E- v A B i C i D ln( i 1) 15 5.75E-1 5.5E- -.1E-3 7.95E- Conditions: F m = 9 ± 3 kn, half sine pulse 8.3/1 ms IT ( A ) 35 T j = 5 C 15 C 3 5 15 1 5 1 3 V T ( V ) Fig. 3 Maximum on-state characteristics TS - T/17/a Jul-11 5 of 7
I TSM ( ka ) 1 1 I TSM i dt,7, i dt (1 A s) I TSM ( ka ) 1 1 1,5 8 1, V R = V 8 V R = V,3 V R.7 V RRM V R =.7 V RRM V R = V, V R =.7 V RRM,1 1 1 t ( ms ) 1 Fig. Surge on-state current vs. pulse length, half sine wave, single pulse, T j = T jmax 1 1 1 1 Number n of cycles at 5 Hz Fig. 5 Surge forward current vs. number of pulses. Half sine wave, T j = T jmax VG ( V ) 7 = P GAVm VG ( V ) 1 1 V FGM 5 1 5µs - C 8 1ms 3 +5 C I FGM +15 C 1 I GTmin = P GAVm 1ms V GTmin,5 1 I G ( A ) 8 1 1 I G ( A ) Fig. Gate trigger characteristics switching Fig. 7 Gate trigger characteristics max. peak gate power loss (single pulses) TS - T/17/a Jul-11 of 7
PT ( W ) 1 1 = 3 9 1 18 PT ( W ) 1 1 = 3 9 1 18 7 8 8 8 I TAV ( A ) 8 I TAV ( A ) Fig. 8 On-state power loss vs. average on-state current, sine waveform, f = 5/ Hz, T = 1/f Fig. 9 On-state power loss vs. average on-state current, square waveform, f = 5/ Hz, T = 1/f T C ( C ) 13 1 TC ( C ) 13 1 11 11 1 1 9 9 8 8 7 = 3 9 1 18 8 I TAV ( A ) Fig. 1 Max. case temperature vs. aver. on-state current, sine waveform, f = 5/ Hz, T = 1/f 7 = 3 9 1 7 18 8 I TAV ( A ) Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 5/ Hz, T = 1/f Notes: TS - T/17/a Jul-11 7 of 7