IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

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1 Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PG-TO Type Package Ordering Code IDB30E120 PG-TO Marking D30E120 Pin 1 PIN 2 PIN 3 NC C Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage V RRM 1200 V Continous forward current T C =25 C T C =90 C I F Surge non repetitive forward current T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current T C =25 C, t p limited by T jmax, D=0.5 Power dissipation T C =25 C T C =90 C I FSM 2 I FRM 76.5 P tot Operating and storage temperature T j, T stg C Soldering temperature T S 245 C reflow soldering, MSL1 W Rev.2.2 Page 1

2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thj SMD version, device on min. footprint R thj cm 2 cooling area 1) Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R µ V R =1200V, T j =25 C V R =1200V, T j =150 C Forward voltage drop I F =30, T j =25 C I F =30, T j =150 C V F V Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2

3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Peak reverse current V R =800V, I F = 30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Reverse recovery charge V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Reverse recovery softness factor V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C nc S Rev.2.2 Page 3

4 1 Power dissipation P tot = f (T C ) parameter: T j 150 C W Diode forward current I F = f(t C ) parameter: T j 150 C Ptot 90 IF C C 150 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) IF C 25 C 0 C 150 C VF V V 3 V F Rev.2.2 Page C 160 T j

5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 800V, T j = 125 C 10 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 800V, T j = 125 C 6500 ns nc 60 trr Qrr /µs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 800V, T j = 125 C /µs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 800V, T j = 125 C 18 Irr S /µs 00 di F /dt Rev.2.2 Page /µs 00 di F /dt

6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP30E120 0 ZthJC single pulse D = s 0 t p Rev.2.2 Page 6

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8 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8