How To Power A Power Supply On A Powerline (Power Supply) (Power Source) (Wired) (Wire) (Powered) (Unmanned) (Electric) (Plastipower) (Motor) (Power)
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1 Preferred Device Silicon Bidirectionl Thyristors Designed primrily for full-wve c control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever full-wve silicon gte controlled solid-stte devices re needed. Tric type thyristors switch from blocking to conducting stte for either polrity of pplied node voltge with positive or negtive gte triggering. Sensitive Gte Triggering Uniquely Comptible for Direct Coupling to TTL, HTL, CMOS nd Opertionl Amplifier Integrted Circuit Logic Functions Gte Triggering 4 Mode,B, 2N6073A,B, 2N6075A,B Blocking Voltges to 600 Volts All Diffused nd Glss Pssivted Junctions for Greter Prmeter Uniformity nd Stbility Smll, Rugged, Thermopd Construction for Low Therml Resistnce, High Het Dissiption nd Durbility Device Mrking: Device Type, e.g.,, Dte Code MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rting Symbol Vlue Unit *Pek Repetitive Off-Stte Voltge(1) (TJ = 40 to 110 C, Sine Wve, 50 to 60 Hz, Gte Open),B 2N6073A,B 2N6075A,B *On-Stte RMS Current (TC = 85 C) Full Cycle Sine Wve 50 to 60 Hz *Pek Non repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110 C) Circuit Fusing Considertions (t = 8.3 ms) *Pek Gte Power (Pulse Width µs, TC = 85 C) *Averge Gte Power (t = 8.3 ms, TC = 85 C) VDRM, VRRM Volts IT(RMS) Amps ITSM 30 Amps I2t 3.7 A2s PGM 10 Wtts PG(AV) Wtt TRIACS 4 AMPERES RMS 200 thru 600 VOLTS MT G TO 225AA (formerly TO 126) CASE 077 STYLE 5 PIN ASSIGNMENT Min Terminl 1 Min Terminl 2 Gte *Pek Gte Voltge (Pulse Width µs, TC = 85 C) VGM 5.0 Volts *Operting Junction Temperture Rnge TJ 40 to +110 *Storge Temperture Rnge Tstg 40 to +150 Mounting Torque (6-32 Screw)(2) 8.0 in. lb. *Indictes JEDEC Registered Dt. (1) VDRM nd VRRM for ll types cn be pplied on continuous bsis. Blocking voltges shll not be tested with constnt current source such tht the voltge rtings of the devices re exceeded. (2) Torque rting pplies with use of compression wsher. Mounting torque in excess of 6 in. lb. does not pprecibly lower cse-to-sink therml resistnce. Min terminl 2 nd hetsink contct pd re common. C C ORDERING INFORMATION Device Pckge Shipping TO225AA 500/Box 2N6071B TO225AA 500/Box 2N6073A TO225AA 500/Box 2N6073B TO225AA 500/Box 2N6075A TO225AA 500/Box 2N6075B TO225AA 500/Box Preferred devices re recommended choices for future use nd best overll vlue. Semiconductor Components Industries, LLC, 2000 My, 2000 Rev. 3 1 Publiction Order Number: 2N6071/D
2 /B THERMAL CHARACTERISTICS Chrcteristic Symbol Mx Unit *Therml Resistnce, Junction to Cse RθJC 3.5 C/W Therml Resistnce, Junction to Ambient RθJA 75 C/W Mximum Led Temperture for Soldering Purposes 1/8 from Cse for 10 Seconds TL 260 C ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted; Electricls pply in both directions) Chrcteristic Symbol Min Typ Mx Unit OFF CHARACTERISTICS *Pek Repetitive Blocking Current (VD = Rted VDRM, VRRM; Gte Open) TJ = 25 C TJ = 110 C ON CHARACTERISTICS *Pek On-Stte Voltge(1) (ITM = 6 A Pek) IDRM, IRRM 10 2 µa VTM 2 Volts *Gte Trigger Voltge (Continuous dc) (Min Terminl Voltge = 12 Vdc, RL = 100 Ohms, TJ = 40 C) All Qudrnts Gte Non Trigger Voltge (Min Terminl Voltge = 12 Vdc, RL = 100 Ohms, TJ = 110 C) All Qudrnts *Holding Current (Min Terminl Voltge = 12 Vdc, Gte Open, Inititing Current = 1 Adc) Turn-On Time (ITM = 14 Adc, IGT = 100 dc) (TJ = 40 C) (TJ = 25 C) VGT VGD IH Volts Volts tgt 1.5 µs QUADRANT (Mximum Vlue) Gte Trigger Current (Continuous dc) (Min Terminl Voltge = 12 Vdc, RL = 100 ohms) Type TJ I II III IV +25 C N6073A 2N6075A 40 C DYNAMIC CHARACTERISTICS Criticl Rte of Rise of Commuttion VDRM, TJ = 85 C, Gte Open, ITM = 5.7 A, Exponentil Wveform, Commutting di/dt = A/ms *Indictes JEDEC Registered Dt. (1) Pulse Test: Pulse Width ms, Duty Cycle 2%. 2N6071B +25 C N6073B 2N6075B 40 C dv/dt(c) 5 V/µs 2
3 /B SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 0 V VEE 14 MC VEE = 5.0 V Ω LOAD 115 VAC 60 Hz Trigger devices re recommended for gting on Trics. They provide: 1. Consistent predictble turn-on points. 2. Simplified circuitry. 3. Fst turn-on time for cooler, more efficient nd relible opertion. Voltge Current Chrcteristic of Trics (Bidirectionl Device) + Current Symbol VDRM IDRM VRRM IRRM Prmeter Pek Repetitive Forwrd Off Stte Voltge Pek Forwrd Blocking Current Pek Repetitive Reverse Off Stte Voltge Pek Reverse Blocking Current IRRM t VRRM on stte IH VTM Qudrnt 1 MinTerminl 2 + VTM IH Mximum On Stte Voltge Holding Current IH off stte + Voltge IDRM t VDRM Qudrnt 3 MinTerminl 2 V TM 3
4 /B Qudrnt Definitions for Tric MT2 POSITIVE (Positive Hlf Cycle) + (+) MT2 (+) MT2 Qudrnt II ( ) IGT GATE (+) IGT GATE Qudrnt I REF REF IGT + IGT ( ) MT2 ( ) MT2 Qudrnt III ( ) IGT GATE (+) IGT GATE Qudrnt IV REF REF MT2 NEGATIVE (Negtive Hlf Cycle) All polrities re referenced to. With in phse signls (using stndrd AC lines) qudrnts I nd III re used. SENSITIVE GATE LOGIC REFERENCE IC Logic Functions Firing Qudrnt I II III IV TTL HTL CMOS (NAND) 2N6071B 2N6071B CMOS (Buffer) 2N6071B 2N6071B Opertionl Amplifier Zero Voltge Switch 4
5 /B T C, CASE TEMPERATURE ( C) α α = dc T C, CASE TEMPERATURE ( C) α = dc 90 α = CONDUCTION ANGLE 70 0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) α = CONDUCTION ANGLE 70 0 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Averge Current Derting Figure 2. RMS Current Derting P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE α = dc P (AV), AVERAGE POWER (WATTS) α = CONDUCTION ANGLE 120 α = dc IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 3. Power Dissiption IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 4. Power Dissiption, GATE TRIGGER VOLTAGE (NORMALIZED) VGT OFF-STATE VOLTAGE = 12 Vdc ALL MODES TJ, JUNCTION TEMPERATURE ( C) 100 Figure 5. Typicl Gte Trigger Voltge , GATE TRIGGER CURRENT (NORMALIZED) IGT 0.7 OFF-STATE VOLTAGE = 12 Vdc ALL MODES TJ, JUNCTION TEMPERATURE ( C) Figure 6. Typicl Gte Trigger Current 5
6 /B ITM, ON-STATE CURRENT (AMP) TJ = 110 C TJ = 25 C IH, HOLDING CURRENT (NORMALIZED) TJ, JUNCTION TEMPERATURE ( C) GATE OPEN APPLIES TO EITHER DIRECTION Figure 8. Typicl Holding Current VTM, ON-STATE VOLTAGE (VOLTS) PEAK SINE WAVE CURRENT (AMP) TJ = 40 to +110 C f = 60 Hz NUMBER OF FULL CYCLES Figure 7. Mximum On Stte Chrcteristics Figure 9. Mximum Allowble Surge Current ZθJC(t), TRANSIENT THERMAL IMPEDANCE ( C/W) MAXIMUM TYPICAL k k 5.0 k 10 k t, TIME (ms) Figure 10. Therml Response 6
7 /B PACKAGE DIMENSIONS TO 225AA (formerly TO 126) CASE ISSUE W H Q B U F A K V G S D 2 PL M C J R 0.25 (0.010) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V (0.010) M A M B M STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE 7
8 /B ON Semiconductor nd re trdemrks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to mke chnges without further notice to ny products herein. SCILLC mkes no wrrnty, representtion or gurntee regrding the suitbility of its products for ny prticulr purpose, nor does SCILLC ssume ny libility rising out of the ppliction or use of ny product or circuit, nd specificlly disclims ny nd ll libility, including without limittion specil, consequentil or incidentl dmges. Typicl prmeters which my be provided in SCILLC dt sheets nd/or specifictions cn nd do vry in different pplictions nd ctul performnce my vry over time. All operting prmeters, including Typicls must be vlidted for ech customer ppliction by customer s technicl experts. SCILLC does not convey ny license under its ptent rights nor the rights of others. SCILLC products re not designed, intended, or uthorized for use s components in systems intended for surgicl implnt into the body, or other pplictions intended to support or sustin life, or for ny other ppliction in which the filure of the SCILLC product could crete sitution where personl injury or deth my occur. Should Buyer purchse or use SCILLC products for ny such unintended or unuthorized ppliction, Buyer shll indemnify nd hold SCILLC nd its officers, employees, subsidiries, ffilites, nd distributors hrmless ginst ll clims, costs, dmges, nd expenses, nd resonble ttorney fees rising out of, directly or indirectly, ny clim of personl injury or deth ssocited with such unintended or unuthorized use, even if such clim lleges tht SCILLC ws negligent regrding the design or mnufcture of the prt. SCILLC is n Equl Opportunity/Affirmtive Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literture Fulfillment: Literture Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colordo USA Phone: or Toll Free USA/Cnd Fx: or Toll Free USA/Cnd Emil: [email protected] Fx Response Line: or Toll Free USA/Cnd N. Americn Technicl Support: Toll Free USA/Cnd EUROPE: LDC for ON Semiconductor Europen Support Germn Phone: (+1) (M F 1:00pm to 5:00pm Munich Time) Emil: ONlit [email protected] French Phone: (+1) (M F 1:00pm to 5:00pm Toulouse Time) Emil: ONlit [email protected] English Phone: (+1) (M F 12:00pm to 5:00pm UK Time) Emil: [email protected] EUROPEAN TOLL FREE ACCESS*: *Avilble from Germny, Frnce, Itly, Englnd, Irelnd CENTRAL/SOUTH AMERICA: Spnish Phone: (Mon Fri 8:00m to 5:00pm MST) Emil: ONlit [email protected] ASIA/PACIFIC: LDC for ON Semiconductor Asi Support Phone: (Tue Fri 9:00m to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singpore: Emil: ONlit [email protected] JAPAN: ON Semiconductor, Jpn Customer Focus Center Nishi Gotnd, Shingw ku, Tokyo, Jpn Phone: Emil: [email protected] ON Semiconductor Website: For dditionl informtion, plese contct your locl Sles Representtive. 8 2N6071/D
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W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All
ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS
Order this document by ULN283/D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or
SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
LOW POWER NARROWBAND FM IF
Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR
Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS
Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM
MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A
IRF540 IRF540FI N - CHNNEL100V - 00.50Ω - 30 - TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V
NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.
Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.
LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR
3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package
NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as
STTH110. High voltage ultrafast rectifier. Description. Features
High voltage ultrafast rectifier Datasheet - production data K Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering,
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent
TISP9110LDM Overvoltage Protector
*RoHS COMPLINT TISP9110LDM INTEGRTED COMPLEMENTRY BUFFERED-GTE SCRS FOR DUL POLRITY SLIC OEROLTGE PROTECTION TISP9110LDM Overvoltage Protector High Performance Protection for SLICs with +ve and -ve Battery
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
MBR0540T1G NRVB0540T1G MBR0540T3G NRVB0540T3G. Surface Mount Schottky Power Rectifier. SOD 123 Power Surface Mount Package
MB54T1G, NVB54T1G, MB54T3G, NVB54T3G Surface Mount Schottky Power ectifier Power Surface Mount Package The Schottky Power ectifier employs the Schottky Barrier principle with a barrier metal that produces
2 DIODE CLIPPING and CLAMPING CIRCUITS
2 DIODE CLIPPING nd CLAMPING CIRCUITS 2.1 Ojectives Understnding the operting principle of diode clipping circuit Understnding the operting principle of clmping circuit Understnding the wveform chnge of
MC14175B/D. Quad Type D Flip-Flop
Quad Type D Flip-Flop The MC475B quad type D flipflop is cotructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each of the four flipflops is positiveedge triggered
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30
Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
STTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.
STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM 5 600 K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
D-PAK version of BUK117-50DL
D-PK version of BUK117-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer
-of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input
PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.
General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated
MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators
MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices
CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming
A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no
TISP4500H3BJ Overvoltage Protector
*RoHS COMPLINT TISP4500H3BJ BIDIRECTIONL THYRISTOR OVERVOLTGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage... >245 V rms - For Controlled
LM78XX Series Voltage Regulators
LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE
