Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz

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1 Product Description Sirenza Microdevices SGC-689Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-689Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-689Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 5 ohms. Gain (db) Gain & Return Loss S21 S22 S11 V D = 5V, I D = 84mA Bias Tee Data, Z S = Z L = 5 Ohms, T L = SGC-689Z 5-4 MHz Active Bias Silicon Germanium Cascadable Gain Block Product Features Single Fixed 5V Supply No Dropping Resistor Required Patented Self Bias Circuitry Gain = 12.8 dbm at 195 MHz P1dB = 18.6 dbm at 195 MHz OIP = 4.5 dbm at 195 MHz Robust 1V ESD, Class 1C HBM Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 27 Sirenza Microdevices, Inc.. All worldwide rights reserved. S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO EDS Rev B Pb RoHS Compliant & Green Package Symbol Parameters Units Frequency Min. Typ. Max. 85 MHz G Small Signal Gain db 195 MHz* MHz MHz 19.5 P 1dB Output Power at 1dB Compression dbm 195 MHz* MHz MHz 6. OIP Output Third Order Intercept Point dbm 195 MHz* MHz.5 IRL Input Return Loss db 195 MHz* ORL Output Return Loss db 195 MHz* NF Noise Figure db 195 MHz* V D Device Operating Voltage V 5. I D Device Operating Current ma Rth, j-l Thermal Resistance (junction to lead) C/W 6 Test Conditions: V D = 5.V I D = 84mA T L = 25 C OIP Tone Spacing = 1MHz, Pout per tone = dbm Bias Tee Data Z S = Z L = 5 Ohms * Test results at 195 MHz measured with Application Circuit

2 SGC-689Z.5-4. GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee Data) Symbol Parameter Unit Frequency (MHz) * 24 5 G Small Signal Gain db OIP Output Third Order Intercept Point dbm P 1dB Output Power at 1dB Compression dbm IRL Input Return Loss db ORL Output Return Loss db S 12 Reverse Isolation db NF Noise Figure db Test Conditions: V D = 5V I D = 84mA OIP Tone Spacing = 1MHz, Pout per tone = dbm T L = 25 C Z S = Z L = 5 Ohms * Test results at 195 MHz measured with Application Circuit Typical Performance with Bias Tees, V D = 5V, I D = 84mA 8 OIP vs. Frequency (dbm/tone, 1MHz spacing) 2 P1dB vs. Frequency 6 21 OIP (dbm) 4 2 P1dB (dbm) Absolute Maximum Ratings Parameter Absolute Limit Max Device Current (I CE ) 12 ma Max Device Voltage (V CE ) 6.5 V Max. RF Input Power* (See Note) +18 dbm Max. Junction Temp. (T J ) +15 C Operating Temp. Range (T L ) -4 C to +85 C Max. Storage Temp. +15 C *Note: Load condition, Z L = 5 Ohms Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D < (T J - T L ) / R TH, j-l T L =T LEAD Reliability & Qualification Information Parameter Rating ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 This product qualification report can be downloaded at Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO EDS Rev B

3 SGC-689Z.5-4. GHz Cascadable MMIC Amplifier Typical Performance with Bias Tees, V D = 5V, I D = 84mA NF (db) Noise Figure vs. Frequency Id (ma) Current vs. Voltage Vd (V) S11 vs. Frequency 2 S21 vs. Frequency S11 (db) Gain (db) S12 vs. Frequency S22 vs. Frequency S12 (db) S22 (db) S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO 821 EDS Rev B

4 SGC-689Z.5-4. GHz Cascadable MMIC Amplifier Basic Application Circuit Vs Application Circuit Element Values Reference Designator 1-1MHz 1-22MHz 1uF 1pF C C1 1pF 6.8pF C2 1pF 6.8pF L1 C 1pF 6.8pF L1 1nH 9nH RF IN 1 4 SGC-689Z RF OUT C1 2 C2 Part Identification Marking & Pinout 1 2 Pin # Function Description 1 RF IN 2,4 GND RF OUT / DCBIAS RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Part / Evaluation Board Ordering Information Part Number Description Reel Size Devices / Reel SGC-689Z Lead Free, RoHs Compliant 1" SGC-689Z-EVB1 1-1 MHz Evaluation Board N/A N/A SGC-689Z-EVB MHz Evaluation Board N/A N/A S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO EDS Rev B

5 SGC-689Z.5-4. GHz Cascadable MMIC Amplifier SOT-89 PCB Pad Layout Dimensions in inches [millimeters] Notes: 1. Provide a large ground pad area under device pins 2 and 4 with several platedthrough holes placed as shown ounce finished copper thickness is recommended.. RF I/O lines are 5Ω RF IN RF Out SOT-89 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-89 package outline drawing with full dimensions and tolerances may be found on the product web page at S. Technology Ct. Phone: (8) SMI-MMIC Broomfield, CO EDS Rev B

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