Optocoupler, Phototransistor Output (Dual, Quad Channel)
|
|
- Aleesha Melton
- 7 years ago
- Views:
Transcription
1 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) FEATURES Dual hannel Quad hannel A A A E E E Identical channel to channel footprint Dual and quad packages feature: - Reduced board space - Lower pin and parts count - Better channel to channel TR match - Improved common mode rejection Isolation test voltage from double molded package, 53 V RMS ompliant to RoHS Directive 22/95/E and in accordance to WEEE 22/96/E A 3 4 AGENY APPROVALS i792- A A E E E UL577, file no. E52744 system code H, double protection SA 9375 BSI IE 695; IE 665 DIN EN (VDE884)/DIN EN pending, available with option i V D E DESRIPTION The ILD65, ILQ65 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 75 VA PEAK and a working voltage of 7 V RMS. The binned min./max. and linear TR characteristics make these devices well suited for D or A voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD65, ILQ65 can be used in medium speed data I/O and control systems. The binned min./max. TR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a MOS logic is enhanced by the guaranteed TR at I F = ma. Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar-
2 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) ORDERING INFORMATION I L x # X # # T DIP Option 6 PART NUMBER x = D (Dual) or Q (Quad) TR BIN PAKAGE OPTION TAPE AND REEL 7.62 mm Option 7.6 mm Option 9 AGENY ERTIFIED/PAKAGE DUAL HANNEL TR (%) ma QUAD HANNEL UL, SA, BSI, VDE 4 to 8 63 to 25 to 2 6 to 32 4 to 8 63 to 25 to 2 6 to 32 DIP-8 ILD65- ILD65-2 ILD65-3 ILD DIP-8, 4 mil, option ILD65-4X SMD-8, option 7 ILD65-X7T SMD-8, option 9 ILD65-X9 ILD65-2X9T () ILD65-3X9T ILD65-4X9T () DIP ILQ65- ILQ65-2 ILQ65-3 ILQ65-4 SMD-6, option ILQ65-2X7 ILQ65-3X7T () ILQ65-4X7 SMD-6, option ILQ65-X9 - ILQ65-3X9T () ILQ65-4X9T () VDE 4 to 8 63 to 25 to 2 6 to 32 4 to 8 63 to 25 to 2 6 to 32 DIP-8 - ILD65-2X - ILD65-4X DIP-8, 4 mil, option 6 - ILD65-2X6 ILD65-3X6 ILD65-4X SMD-8, option ILD65-3X7T () DIP ILQ65-3X ILQ65-4X DIP-6, 4 mil, option ILQ65-3X6 - SMD-6, option ILQ65-2X7 - - Notes Also available in tubes; do not add T to end. Additional options may be possible, please contact sales office. >.7 mm >. mm ABSOLUTE MAXIMUM RATINGS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 6 ma Surge current I FSM.5 A Power dissipation P diss mw Derate linearly from mw/ OUTPUT ollector emitter breakdown voltage BV EO 7 V Emitter collector breakdown voltage BV EO 7 V ollector current I 5 ma t < ms I ma Power dissipation P diss 5 mw Derate linearly from 25 2 mw/ For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev..6, 4-Mar-
3 Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL VALUE UNIT OUPLER Storage temperature T stg - 55 to + 5 Operating temperature T amb - 55 to + Junction temperature T j Soldering temperature () 2 mm distance from case bottom T sld 26 Package power dissipation ILD65 4 mw Derate linearly from mw/ Package power dissipation ILQ65 5 mw Derate linearly from mw/ Isolation test voltage t = s V ISO 53 V RMS Isolation voltage V IORM 89 V P Total power dissipation P tot 25 mw reepage distance 7 mm learance distance 7 mm Isolation resistance V IO = 5 V, T amb = 25 R IO 2 V IO = 5 V, T amb = R IO Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELETRIAL HARATERISTS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = ma V F.5.3 V Breakdown voltage I R = μa V BR 6 3 V Reverse current V R = 6 V I R. μa apacitance V R = V, f = MHz O 25 pf Thermal resistance, junction to lead R THJL 75 K/W OUTPUT ollector emitter capacitance V E = 5 V, f = MHz E 6.8 pf ollector emitter leakage current, -, -2 V E = V I EO 2 5 na ollector emitter leakage current, -3, -4 V E = V I EO 5 na ollector emitter breakdown voltage I E =.5 ma BV EO 7 V Emitter collector breakdown voltage I E =. ma BV EO 7 V Thermal resistance, junction to lead R THJL 5 K/W PAKAGE TRANSFER HARATERISTIS hannel/channel TR match I F = ma, V E = 5 V TRX/TRY to 2 to OUPLER apacitance (input to output) V IO = V, f = MHz IO.8 pf Insulation resistance V IO = 5 V, T A = 25 R S 2 4 hannel to channel isolation 5 VA Note Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar- 3
4 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) URRENT TRANSFER RATIO (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT urrent transfer ratio (collector emitter saturated) urrent transfer ratio (collector emitter) I F = ma, V E =.4 V I F = ma, V E = 5 V I F = ma, V E = 5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 TR Esat 25 % TR Esat 4 % TR Esat 6 % TR Esat % TR E 3 3 % TR E % TR E 34 7 % TR E 56 9 % TR E % TR E % TR E 5 2 % TR E % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test %, t test = s V pd.669 kv Partial discharge test voltage - lot test (sample test) t Tr = 6 s, t test = s, (see figure 2) V IOTM kv V pd.424 kv V IO = 5 V R IO 2 Insulation resistance V IO = 5 V, T amb = R IO V IO = 5 V, T amb 75 (construction test only) R IO 9 Forward current I SI 275 ma Power dissipation P SO 4 mw Rated impulse voltage V IOTM kv Safety temperature T SI 75 Note According to DIN EN (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. ompliance with the safety ratings shall be ensured by means of suitable protective circuits. For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev..6, 4-Mar-
5 Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors Phototransistor P SO (mw) V IOTM t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s 25 V Pd 2 5 IR-Diode I SI (ma) V IOWM V IORM T amb - Ambient Temperature ( ) 393 t t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN (VDE884); IE SWITHING HARATERISTIS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED urrent V = 5 V, R L = 75, 5 % of V PP I F ma Turn-on time V = 5 V, R L = 75, 5 % of V PP t on 3 μs Rise time V = 5 V, R L = 75, 5 % of V PP t r 2 μs Turn-off time V = 5 V, R L = 75, 5 % of V PP t off 2.3 μs Fall time V = 5 V, R L = 75, 5 % of V PP t f 2 μs Propagation H to L V = 5 V, R L = 75, 5 % of V PP t PHL. μs Propagation L to H V = 5 V, R L = 75, 5 % of V PP t PLH 2.5 μs SATURATED urrent Turn-on time V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 I F 2 ma I F ma I F ma I F 5 ma t on 3 μs t on 4.3 μs t on 4.3 μs t on 6 μs Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar- 5
6 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) SWITHING HARATERISTIS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT SATURATED Rise time Turn-off time Fall time Propagation H to L Propagation L to H V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 t r 2 μs t r 2.8 μs t r 2.8 μs t r 4.6 μs t off 8 μs t off 25 μs t off 25 μs t off 25 μs t f μs t f 4 μs t f 4 μs t f 5 μs t PHL.6 μs t PHL 2.6 μs t PHL 2.6 μs t PHL 5.4 μs t PLH 8.6 μs t PLH 7.2 μs t PLH 7.2 μs t PLH 7.4 μs OMMON MODE TRANSIENT IMMUNITY (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT ommon mode rejection output high V M = 5 V P-P, R L = k, I F = ma M H 5 V/μs ommon mode rejection output low V M = 5 V P-P, R L = k, I F = ma M L 5 V/μs ommon mode coupling capacitance M. pf For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev..6, 4-Mar-
7 Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors TYPIAL HARATERISTIS (T amb = 25, unless otherwise specified) V = 5 V I F I F = ma t D V O V O t R f = khz, R L = 75 Ω t PLH DF = 5 % V TH =.5 V t PHL t S t F iild65_ iild65_4 Fig. 3 - Non-Saturated Switching Timing Fig. 6 - Saturated Switching Timing 2 f = khz, DF = 5 % V = 5 V R L V O P LED - LED Power (mw) 5 5 iild65_ T amb - Ambient Temperature ( ) Fig. 4 - Saturated Switching Timing Fig. 7 - Maximum LED Power Dissipation I F.4 V O t PLH t PLH t S 5 % V F - Forward Voltage (V) T amb = - 55 T amb = 25 T amb = 85 iild65_3 t D t on t R t off t F.7. iild65_7 I F - Forward urrent (ma) Fig. 5 - Non-Saturated Switching Timing Fig. 8 - Forward Voltage vs. Forward urrent Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar- 7
8 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) I f(pk) - Peak LED urrent (ma) Duty Factor t - LED Pulse Duration (s) iild65_8 Fig. 9 - Peak LED urrent vs. Pulse Duration, τ t τ DF = /t TR NF - Normalized TR Factor.5..5 iild65_ Normalized to: V ce = V, I F = 5 ma, TR ce(sat) V ce =.4 V NTR ce NTR ce(sat).. I F - LED urrent (ma) T A = 25 Fig. 2 - Normalization Factor for Non-Saturated and Saturated TR vs. I F P DET - Detector Power (mw) iild65_9 T amb - Ambient Temperature ( ) Fig. - Maximum Detector Power Dissipation TR NF - Normalized TR Factor.5..5 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A = 5.. iild65_2 I F - LED urrent (ma) Fig. 3 - Normalization Factor for Non-Saturated and Saturated TR vs. I F I E - ollector urrent (ma).. V E - ollector Emitter Voltage (V) iild65_ R th = 5 /W Fig. - Maximum ollector urrent vs. ollector Voltage TR NF - Normalized TR Factor.5..5 iild65_3 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A = 7.. I F - LED urrent (ma) Fig. 4 - Normalization Factor for Non-Saturated and Saturated TR vs. I F For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev..6, 4-Mar-
9 Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors TR NF - Normalized TR Factor.5..5 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A =.. - Propagation Low-High (µs) tplh. I F = ma V = 5 V, V th =.5 V t plh t phl t phl - Propagation High-Low (µs) iild65_4 I F - LED urrent (ma) iild65_7 R L - Load Resistor (kω) Fig. 5 - Normalization Factor for Non-Saturated and Saturated TR vs. I F Fig , Propagation Delay vs. ollector Load Resistor I E - ollector urrent (ma) t plh - Propagation Low-High(µs). I F = ma V = 5 V, V th =.5 V t plh t phl t phl - Propagation High-Low (µs) iild65_5 I F - LED urrent (ma) iild65_8 R L - ollector Load Resistor (kω) Fig. 6 - ollector Emitter urrent vs. Temperature and LED urrent Fig , -3, Propagation Delay vs. ollector Load Resistor I EO - ollector Emittet (na) iild65_6 V ce = V Typical T amb - Ambient Temperature ( ) t plh - Propagation Low - High (µs). iild65_9 I F = ma V = 5 V, V th =.5 V t plh t phl R L - ollector Load Resistor (kω) t phl - Propagation Low - High (μs) Fig. 7 - ollector Emitter Leakage vs. Temperature Fig , Propagation Delay vs. ollector Load Resistor Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar- 9
10 ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) PAKAGE DIMENSIONS in millimeters Pin one ID ± ISO method A 9.77 ±.4.95 ±.9 4 typ typ ± ±.5.7 ±.9 3 to ± ±.255 i typ..25 ±.5 Pin one ID ISO method A typ typ to 9 typ i787 For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev..6, 4-Mar-
11 Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors Option 6 Option 7 Option typ typ..3 max typ ± ±.3. min..7 min. 8 min. 4.3 ±.3.6 min.. ±. 3.6 ±.3.3 max..6 min. 8 min..6 typ R R min min R R min min PAKAGE MARKING ILD Notes Only options and 7 reflected in the package marking. The VDE Logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. V YWW H 68 Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev..6, 4-Mar-
12 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUT, PRODUT SPEIFIATIONS AND DATA ARE SUBJET TO HANGE WITHOUT NOTIE TO IMPROVE RELIABILITY, FUNTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel 2 8 7 E FETURES urrent transfer ratio at I F = m 3 4 6 5 E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E
More informationOptocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
More informationOptocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
More informationOptocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
More informationOptocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package
ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T
More informationOptocoupler, Phototransistor Output, AC Input
Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have
More informationOptocoupler, Phototransistor Output, with Base Connection
Optocoupler, Phototransistor Output, with Base Connection FEATURES i794-4 DESCRIPTION This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families
More informationOptocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package
Optocoupler, Photodarlington Output, i179042 DESCRIPTION A1 C 2 A3 C4 8 C 7E 6C 5E The ILD233T is a high current transfer ratio (CTR) optocoupler. It has a gallium arsenide infrared LED emitter and silicon
More information1 Form A Solid State Relay
Form A Solid State Relay VOAT, VOAABTR FEATURES 9 S S DC S' 3 S' High speed SSR - t on /t off < 8 μs Maximum R ON. Isolation test voltage 3 V RMS Load voltage V Load current A DC configuration DIP- package
More information1 Form A Solid State Relay
1 Form A Solid State Relay Vishay Semiconductors DIP i1791- SMD DESCRIPTION Vishay solid state relays (SSRs) are miniature, optically coupled relays with high-voltage MOSFET outputs. The LH1518 relays
More informationOptocoupler, Phototransistor Output, with Base Connection
HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC 2 3 6 5 4 B C E Isolation test voltage: 5300
More informationOptocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current
Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation
More informationOptocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package
Optocoupler, Phototransistor Output, FEATURES High BV CEO, 70 V Vishay Semiconductors i79002 A K NC NC 2 3 4 8 7 6 5 NC B C E Isolation test voltage, 4000 V RMS Industry standard SOIC-8A surface mountable
More informationPhotovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation
More informationOptocoupler, Phototransistor Output, with Base Connection
CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance
More informationReflective Optical Sensor with Transistor Output
TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 Peak operating distance: 2.5
More information2.5 A Output Current IGBT and MOSFET Driver
VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for
More informationOptocoupler, Phototransistor Output, With Base Connection
IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationReflective Optical Sensor with Transistor Output
www.vishay.com TCRT, TCRT Reflective Optical Sensor with Transistor Output 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
More informationSmall Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
More informationK817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic
More informationHigh Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded
More informationAmbient Light Sensor
TEPT56 Ambient Light Sensor DESCRIPTION 94 839 TEPT56 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye
More informationPreamplifier Circuit for IR Remote Control
Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all
More informationSilicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
More informationSchottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8632 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8583 BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor 16758-1 VEMT252X1 DESCRIPTION VEMT25X1 VEMT25X1 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting.
More informationP6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
More informationHigh Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
More informationHigh Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die
More informationSchottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL51 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 96 1155 TSAL51 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic
More informationAluminum Electrolytic Capacitors Power Eurodin Printed Wiring
Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 00 0 Nominal case size (Ø D x L in mm) x 0 to 0 x 00 Rated capacitance range 0 μf to
More informationIR Receiver Module for Light Barrier Systems
Not for New Design - Alternative Available: New TSSP4038 (#82458) www.vishay.com IR Receiver Module for Light Barrier Systems TSOP4038 2 3 MECHANICAL DATA Pinning: = OUT, 2 = GND., 3 = V S 6672 FEATURES
More information40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
More informationHigh Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF55 High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 26 DESCRIPTION TSFF55 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high
More informationAluminum Electrolytic Capacitors Power Economic Printed Wiring
Aluminum Electrolytic Capacitors Power Economic Printed Wiring 0/0 PECPW 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION high ripple current 0/0 PECPW long life 0 C Nominal case size (Ø D x L in mm) Rated
More information1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.
TRANSZORB Transient Voltage Suppressors Case Style.5KE FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 500 W peak pulse power capability with a /0 μs waveform, repetitive
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output CNY7 Description The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E
More informationPower MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationLinear Optocoupler, High Gain Stability, Wide Bandwidth
ishay Semiconductors Linear Optocoupler, High Gain Stability, Wide Bandwidth i9 DESCRIPTION The linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode
More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationAluminum Electrolytic Capacitors Axial Miniature, Long-Life
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38
More informationUltrabright White LED, Ø 3 mm
Ultrabright White LED, Ø 3 mm DESCRIPTION The VLHW41 series is a clear, untinted 3 mm LED for high end applications where supreme luminous intensity is required. These lamps utilize the highly developed
More informationSchottky Rectifier, 1 A
Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic
More information4N25 Phototransistor Optocoupler General Purpose Type
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationStandard 0603 SMD LED
TLMS, TLMO, TLMY, TLMG, TLMP, TLMB Standard 63 SMD LED DESCRIPTION 8562 The new 63 LED series have been designed in the smallest SMD package. This innovative 63 LED technology opens the way to smaller
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
More informationPHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
More informationS112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor
More informationLinear Optocoupler, High Gain Stability, Wide Bandwidth
Linear Optocoupler, High Gain IL3 i9 DESCRIPTION The IL3 linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feedback
More informationP-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
More informationElectrical Double Layer Energy Storage Capacitors Power and Energy Versions
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions FEATURES Polarized energy storage capacitor with high capacity and energy density Energy version with high stability available
More information45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
More informationTransmissive Optical Sensor with Phototransistor Output
TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face
More informationUV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
UV SMD LED PLCC-2 VLMU31 19225 DESCRIPTION The package of the VLMU31-series is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
More informationY.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
More informationPower Resistor Thick Film Technology
Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES
More informationMetal Film Resistors, Pulse Withstanding Protective
End of Life - August 213 www.vishay.com Metal Film Resistors, Pulse Withstanding Protective STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL POWER RATING P 7 C W FEATURES Special design provides lightning
More information65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
More information28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control
28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control OPERATION DESCRIPTION SiP32419 and SiP32429 are load switches that integrate multiple control features that simplify the design
More informationLow Current SMD LED PLCC-2
Low Current SMD LED PLCC-2 VLMC31. 19225 DESCRIPTION These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the VLMC31. is the PLCC-2 (equivalent to
More informationAluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
More informationSMD Aluminum Solid Capacitors with Conductive Polymer
SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package
More informationN-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
More information50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
More informationBC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output Description The NY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence
More informationP-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
More informationSuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal
SuperTan Extended () Capacitors, Wet Tantalum Capacitors with Hermetic Seal FEATURES SuperTan Extended () represents a major breakthrough in wet tantalum capacitor Available technology. Its unique cathode
More informationData Sheet. ACPL-077L Low Power 3.3 V / 5 V High Speed CMOS Optocoupler Design for System Level Reliability. Description. Features. Functional Diagram
ACPL-077L Low Power 3.3 V / 5 V High Speed CMOS Optocoupler Design for System Level Reliability Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes
More informationAudio Jack Detector with Send / End Detect
Audio Jack Detector with Send / End Detect DESCRIPTION The is an audio jack detector and pop noise control switch IC. It integrates the circuits necessary to detect the presence of a stereo headset with
More informationHIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The, /6 single-channel and /6 dual-channel optocouplers consist of a 5 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output. This
More informationAluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
More informationSurface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications ELECTRICAL SPECIFICATIONS X7R GENERAL SPECIFICATION Note Electrical characteristics at +25 C unless otherwise specified
More informationPower MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationIR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications
IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications MECHANICAL DATA Pinning: = OUT, 2 = GND, 3 = V S 2 3 6672 APPLICATIONS Reflective sensors for hand dryers, towel or
More informationFeatures. Applications. Truth Table. Close
ASSR-8, ASSR-9 and ASSR-8 Form A, Solid State Relay (Photo MOSFET) (0V/0.A/0Ω) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically
More informationLow forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
More information5 V, 1 A H-Bridge Motor Driver
, A H-Bridge Motor Driver DESCRIPTION The SIP200 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to A continuous current at DD supply. The SIP200
More informationAC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC
4L Series AC Line Rated Ceramic Disc Capacitors Class X, 76 V AC / Class Y, 5 V AC FEATURES Complies with IEC 6384-4, 4 th edition High reliability Radial leads High capacitance up to nf Singlelayer AC
More informationPreamplifier Circuit for IR Remote Control
Preamplifier Circuit for IR Remote Control DESCRIPTION 2296 The is designed for use in an IR receiver application together with a photo pin diode. It is a sophisticated receiver concept that is very sensitive
More informationThick Film Resistor Networks, Dual-In-Line, Molded DIP
Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES Isolated, bussed, and dual terminator schematics available 0.160" (4.06 mm) maximum seated height and rugged, molded case construction Thick
More informationPower MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
More informationSMD PTC - Nickel Thin Film Linear Thermistors
SMD PTC - Nickel Thin Film Linear Thermistors Notes (1) Contact if closer TCR lot tolerance is desired. (2) Other R 25 -values and tolerances are available upon request. (3) Rated continuous working voltage
More informationPower Resistor for Mounting onto a Heatsink Thick Film Technology
DIMENSIONS in millimeters Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES 800 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series Non inductive Easy
More informationDISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
More informationWirewound Resistors, Industrial Power, Aluminum Housed, Chassis Mount
Wirewound Resistors, Industrial Power, Aluminum Housed, hassis Mount FEATURES Molded construction for total environmental protection omplete welded construction Meets applicable requirements of MIL-PRF-18546
More informationHigh-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
More information