Y.LIN ELECTRONICS CO.,LTD.
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- Kellie Sylvia Allen
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1 Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact small outline package Pb free and RoHS compliant. Description The J C817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. Applications Schematic Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances, such as fan heaters, etc. Signal transmission between circuits of different potentials and impedances Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector TEL FAX
2 Absolute Maximum Ratings (T a =25 C) Parameter Symbol Rating Unit Forward current I F 50 ma Peak forward current (1us, pulse) I FP 1 A Input Reverse voltage V R 6 V Power dissipation Derating factor ( abovet a = 100 C) 70 mw P D 2.9 mw/ C Power dissipation Derating factor (above T a = 100 C) P C 150 mw 5.8 mw/ C Output Collector current I C 50 ma Collector-Emitter voltage V CEO 35 V Emitter-Collector voltage V ECO 6 V Total power dissipation P TOT 200 mw Isolation voltage *1 V ISO 5000 V rms Operating temperature T OPR -55 ~ +110 C Storage temperature T STG -55 ~ +125 C Soldering temperature *2 T SOL 260 C Notes *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together. *2 For 10 seconds. Y.LIN ELECTRONICS CO.,LTD TEL FAX
3 Electrical Characteristics (T a =25 C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage V F V I F = 20mA Reverse current I R µa V R = 4V Input capacitance C in pf V = 0, f = 1kHz Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter dark current I CEO na V CE = 20V, I F = 0mA Collector-Emitter breakdown voltage BV CEO V I C = 0.1mA Emitter-Collector breakdown voltage BV ECO V I E = 0.1mA Transfer Characteristics (T a =25 C unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit Condition EL Current Transfer ratio EL817A EL817B CTR EL817C % I F = 5mA,V CE = 5V EL817D Collector-Emitter saturation voltage V CE(sat) V I F = 20mA,I C = 1mA Isolation resistance R IO Ω V IO = 500Vdc, 40~60% R.H. Floating capacitance C IO pf V IO = 0, f = 1MHz Cut-off frequency fc khz Rise time t r µs Fall time t f µs V CE = 5V, I C = 2mA R L = 100Ω, -3dB V CE = 2V, I C = 2mA, R L = 100Ω * Typical values at T a = 25 C TEL FAX
4 Typical Performance Curves TEL FAX
5 V CC I F I C R L Output Input Pulse Input R IN Output Pulse t t on r t 10% 90% f t off Figure 7. Switching Time Test Circuit & Waveforms Y.LIN ELECTRONICS CO.,LTD TEL FAX
6 Order Information Part Number Note X Y Z F V = Lead form option (S, S1, M or none) = CTR Rank (A, B, C, D or none) = Tape and reel option (TA, TB, TU, TD or none). = Lead frame option (F Iron, None copper) = VDE optin. Option Description Packing quantity None Standard DIP units per tube M Wide lead bend (0.4 inch spacing) 100 units per tube S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel S (TU) Surface mount lead form + TU tape & reel option 1500 units per reel S (TD) Surface mount lead form + TD tape & reel option 1500 units per reel S1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reel S1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel TEL FAX
7 Standard DIP Type Package Drawing (Dimensions in mm) Option M Type TEL FAX
8 Option S Type Option S1 Type TEL FAX
9 Solder Reflow Temperature Profile 260 C( peak,10 Sec Max ) 217 C 200 C 1-3 C/Sec Max Sec >255 C ( 30s Max ) 150 C Sec 1-3 C/Sec Max TIME (S) TEL FAX
10 DISCLAIMER 1. The specifications in this datasheet may be changed without notice. on material change for above specification. Y.LIN reserves the authority 2. When using this product, please observe the absolute maximum ratings and the instructions for use as outlined in this datasheet. Y.LIN assumes no res ponsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in this datasheet. 3. These specification sheets include materials protected under copyright of Y.LIN. Reproduction in any form is prohibited without the specific consent of YLIN. TEL FAX
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.45mm Height 42 Package Pure Green Chip LED Technical Data Sheet Part No.: LL-S16PGC-G5-1B Spec No.: S16 Rev No.: V.2 Date: Dec./6/25 Page: 1 OF 9 Features: Package in 8mm tape on 7" diameter reel. Compatible
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
Photolink- Fiber Optic Receiver PLR135/T1
Features High PD sensitivity optimized for red light Data : NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
How To Test A Sidactor Series For A Power Supply
SDP Series - SOT23-5 RoHS Pb e3 Description This new SIDACtor series is targeted for the tertiary or line driver side protection position for VDSL2+, ADSL2 applications and general I/O protection functions.
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
Data Sheet. ACPL-M21L, ACPL-021L, ACPL-024L, ACPL-W21L and ACPL-K24L Low Power, 5 MBd Digital CMOS Optocoupler. Description.
ACPL-ML, ACPL-L, ACPL-L, ACPL-WL and ACPL-KL Low Power, MBd Digital CMOS Optocoupler Data Sheet Lead (Pb) Free RoHS fully compliant RoHS fully compliant options available; -xxxe denotes a lead-free product
Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series. MLN SurgeArray TM Suppressor. Description
MLN SurgeArray TM Suppressor RoHS Description The MLN SurgeArray Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
Ambient Light Sensor DIP 5mm T-1 3/4 EAALST05RDMA0
Features Close responsively to the human eye spectrum Light to Current, analog output Good output linearity across wide illumination range Low sensitivity variation across various light sources Guaranteed
ULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
SURFACE MOUNT LED LAMP STANDARD BRIGHT 0606
PACKAGE DIMENSIONS 0.075 (1.9) 0.063 (1.6) 0.035 (0.9) TOP 0.047 (1.2) 0.012 (0.3) 0.032 [0.8] SIDE 0.043 [1.1] 1 3 0.020 [0.5] 2 4 BOTTOM CATHODE MASK 1 2 3 4 HER / AlGaAs Red / Yellow (for-34) Green
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications
Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge