Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Transcription

1 Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V DESCRIPTION The has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling device is designed for signal transmission between two electrically separated circuits. C 2 3 E Isolation test voltage, 5 V RMS Isolation voltage V IORM = 5 V peak Low coupling capacitance High common mode transient immunity Material categorization: for definitions of compliance please see APPLICATIONS Telecom Industrial controls Battery powered equipment Office machines Programmable controllers AGENCY APPROVALS (All parts are certified under base model ) UL577, file no. E76222 cul CSA 22.2 bulletin 5A, double protection DIN EN (VDE 884-5), available with option BSI: EN 665:22, EN 695-:26 FIMKO EN695- CQC: GB8898-2, GB ORDERING INFORMATION V O L 6 7 A - # X T LSOP-4 PART NUMBER CTR BIN PACKAGE OPTION TAPE AND REEL.2 mm AGENCY CERTIFIED/ PACKAGE UL, cul, BSI, FIMKO, CQC 4 pin LSOP, mini-flat, long creepage UL, cul, BSI, FIMKO, CQC, VDE (option ) 4 pin LSOP, mini-flat, long creepage CTR (%) 5 ma 5 to 6 4 to 8 63 to 25 to 2 6 to 32 8 to 6 3 to 26 T T 2T 3T 4T to 6 4 to 8 63 to 25 to 2 6 to 32 8 to 6 3 to 26 XT XT 2XT 3XT 4XT 7XT 8XT Rev. 2., 3-Oct-5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Power dissipation P diss mw Forward surge current t p < μs I FSM.5 A Forward current I F 6 ma Junction temperature T j 25 C OUTPUT Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma t p /T =.5, t p < ms I C ma Power dissipation P diss 5 mw Junction temperature T j 25 C COUPLER Total power dissipation P tot 25 mw Storage temperature range T stg -55 to +25 C Ambient temperature range T amb -55 to + C Soldering temperature () s T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices. P tot - Total Power Dissipation (mw) Coupled device Phototransistor IR-diode T amb - Ambient Temperature ( C) Fig. - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 5 ma V F V Capacitance V R = V, f = MHz C O - 45 pf Reverse current V R = 6 V I R - μa OUTPUT Collector emitter leakage current V CE = V, I F = A I CEO - 2 na Collector emitter capacitance V CE = 5 V, f = MHz C CE pf COUPLER Collector emitter saturation voltage I C =. ma, I F = 5 ma V CEsat V Coupling capacitance f = MHz C C pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 2., 3-Oct-5 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT CTR 5-6 % CTR 4-8 % 2 CTR % I C /I F I F = 5 ma, V CE = 5 V 3 CTR - 2 % 4 CTR 6-32 % 7 CTR 8-6 % 8 CTR 3-26 % SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn on time V CC = 5 V, I C = 2 ma, R L = Ω t on μs Rise time V CC = 5 V, I C = 2 ma, R L = Ω t r μs Turn off time V CC = 5 V, I C = 2 ma, R L = Ω t off μs Fall time V CC = 5 V, I C = 2 ma, R L = Ω t f μs V CC = 5 V Input pulse Input R L V OUT % 9 % Output pulse t r t f t on t off isfh68a_ Fig. 2 - Test Circuit isfh68a_2 Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Partial discharge test voltage - routine test %, t test = s V pd 2 kv Partial discharge test voltage - lot test (sample test) t Tr = 6 s, t test = s, (see figure 4) V IOTM 8 kv V pd.68 kv Maximum withstanding isolation voltage t = min V ISO 5 V RMS Insulation voltage V IORM 5 V peak V IO = 5 V DC, T amb = 25 C R IO 2 Ω Insulation resistance V IO = 5 V DC, T amb = C R IO Ω V IO = 5 V DC, T amb = 5 C (construction test only) R IO 9 Ω Safety rating - maximum input current I si 3 ma Safety rating - maximum power dissipation P SO 265 mw Rated impulse voltage V IOTM 8 kv Safety rating - maximum ambient temperature T si 5 C Comparative tracking index CTI 275 Clearance distance 8 mm Creepage distance 8 mm Insulation distance (internal) DTI.4 mm Note According to DIN EN (VDE 884-5), , (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 2., 3-Oct-5 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 3 V IOTM 25 2 Phototransistor P SO (mw) t, t 2 = s to s t 3, t 4 = s t test = s t stres = 2 s V pd 5 V IOWM V IORM 5 IR-diode I si (ma) T si - Safety Temperature ( C) t t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. 4 - Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to DIN EN TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) T amb = C T amb = 75 C T amb = 25 C T amb = C T amb = - 55 C I CE - Leakage Current (na).. I F = ma V CE = 4 V V CE = 2 V V CE = 24 V V F - Forward Voltage (V) T amb - Ambient Temperature ( C) Fig. 6 - Forward Current vs. Forward Voltage Fig. 8 - Collector Emitter Current vs. Ambient Temperature I C - Collector Current (ma) I F = 35 ma I F = 3 ma I F = 25 ma I F = 2 ma I F = 5 ma I I F = ma F = ma I F = 5 ma I C - Collector Current (ma) I F = 25 ma I F = ma I F = 5 ma I F = ma I F = 2 ma V CE - Collector Emitter Voltage (V) V CE - Collector Emitter Voltage (V) Fig. 7 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Collector Current vs. Collector Emitter Voltage Rev. 2., 3-Oct-5 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 N CTR - Normalized CTR (non-saturated) I F = 5 ma.2 Normalized to CTR value: I F = 5 ma, V CE = 5 V, T amb = 25 C T amb - Ambient Temperature ( C) N CTR - Normalized CTR (sat) V CE =.4 V Normalized to: I F = 5 ma, V CE = 5 V, T amb = 25 C T amb = C T amb = -55 C T amb = 25 C T amb = 75 C T amb = C. I F - Forward Current (ma) Fig. - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature Fig. 3 - Normalized Current Transfer Ratio (saturated) vs. Forward Current N CTR - Normalized CTR (sat) Normalized to CTR value: I F = 5 ma, V CE = 5 V, T amb = 25 C Phase Angle (deg) V CE = 5 V R L = Ω R L = Ω T amb - Ambient Temperature ( C) f - Frequency (khz) Fig. - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature Fig. 4 - Cut-Off Frequency vs. Phase Angle N CTR - Normalized CTR (NS) T amb = -55 C T amb = 25 C T amb = C T amb = 75 C T amb = C Normalized to: I F = 5 ma, V CE = 5 V. I F - Forward Current (ma) f CTR (khz) V CC = 5 V. I C (ma) Fig. 2 - Normalized Current Transfer Ratio (non-saturated) vs. Forward Current Fig. 5 - Cut-Off Frequency vs. Collector Current Rev. 2., 3-Oct-5 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 t on, toff - Switching Time (μs) V CE = 5 V, I F = 2 ma t off (μs) t on (μs) R L - Load Resistance (kω) Fig. 6 - Switching Time vs. Load Resistance. V CEsat - Collector Emitter Saturation Voltage (V) CTR = 5 % used 2 % used.2 % used I C - Collector Current (ma) Fig. 7 - Collector Emitter Saturation Voltage vs. Collector Current t on /t off - Turn-On/Turn-Off Time (µs) Saturated operation V S = 5 V R L = kω I F - Forward Current (ma) t off t on 2 Fig. 8 - Turn-On/Turn-Off Time vs. Forward Current Rev. 2., 3-Oct-5 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 PACKAGE DIMENSIONS (in millimeters) 2.3 max max ± Seating plane.45 ± nom. 4 3 Possible footprint Pin no. identification technical drawings according to DIN specifications PACKAGE MARKING (example of 3XT) 67A-3X V YWW 68 Notes Only option is reflected in the package marking with the characters X. Tape and reel suffix (T) is not part of the package marking. TAPE AND REEL DIMENSIONS (in millimeters) ESD sticker.75 Ø (3") Tape slot in core Regular, special or bar code label 7999 Direction of pulling out Ø.6 technical drawings according to DIN specification Fig. 9 - Reel Dimensions (3 units per reel) Fig. 2 - Tape Dimensions Rev. 2., 3-Oct-5 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 SOLDER PROFILE Temperature ( C) C 24 C 27 C max. 2 s max. 26 C 245 C max. 3 s max. s max. ramp down 6 C/s HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 3 C, RH < 85 % Moisture sensitivity level, according to J-STD-2 5 max. ramp up 3 C/s Time (s) Fig. 2 - Lead (Pb)-free Reflow Solder Profile according to J-STD-2 Rev. 2., 3-Oct-5 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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