uclamp3301d Low Voltage µclamp TM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClamp TM Description Features Mechanical Characteristics

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1 MicroClamp TM Description The µclamp TM series of Transient oltage Suppressors (TS) are designed to replace multilayer varistors (MLs) in portable applications such as cell phones, notebook computers, and PDs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLs. They are are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The µclamp TM 3301D is constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The µclamp3301d is in a SOD323 package and will protect one unidirectional line. They give the designer the flexibility to protect one line in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 60042, Level 4 (±15k air, ±8k contact discharge). Equivalent Circuit Diagram pplications uclamp3301d Low oltage µclamp TM for ESD and CDE Protection Features 0 Watts peak pulse power (tp = 8/20µs) Transient protection for data lines to IEC (ESD) ±15k (air), ±8k (contact) IEC (EFT) 40 (tp = 5/50ns) IEC (Lightning) (tp = 8/20µs) Small package for use in portable electronics Suitable replacement for MLs in ESD protection applications Protects one line Low clamping voltage Working voltages: 3.3 Low leakage current Solidstate siliconavalanche technology Mechanical Characteristics EIJ SOD323 package Molding compound flammability rating: UL 940 Marking: Marking code, cathode band Packaging: Tape and Reel Lead Finish: Matte tin RoHS/WEEE Compliant Cell Phone Handsets and ccessories Laser Diode Protection Notebooks, Desktops, & Servers Portable Instrumentation nalog Inputs Schematic & PIN Configuration SOD323 (Top iew) Revision 01/16/2008 1

2 bsolute Maximum Rating Rating Symbol alue Units Peak Peak Pulse Power (tp = 8/20µs) Pulse Current (tp = 8/20µs) ESD oltage (HBM Waveform per IEC 60042) P pk 00 1 Watts PP 30 k Operating Temperature T J 55 to +125 C Storage Temperature T STG 55 to +150 C Electrical Characteristics Parameter Symbol Conditions Minimum Typical Maximum Units Reverse StandOff oltage WM R. 3 3 PunchThrough SnapBack oltage oltage PT SB I PT I SB = 2µ 3. 5 = 50m 2. 8 Reverse Leakage Current I R RWM = 3.3, T=25 C 0. 5 µ Clamping oltage C = 1, tp = 8/20µ s Pin 1 to 2 Clamping oltage C = 5, tp = 8/20µ s Pin 1 to 2 Clamping oltage C =, tp = 8/20µ s Pin 1 to Steering Diode Forward oltage (Reverse Clamping oltage) F = 1, tp = 8/20µ s Pin 2 to Junction Capacitance C j R = 0, f = 1MHz 50 pf 2008 Semtech Corp. 2

3 Typical Characteristics NonRepetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power P PP (kw) Pulse Duration tp (Ξs) % of Rated Power or IPP mbient Temperature T ( o C) Clamping oltage vs. Peak Pulse Current Normalized Capacitance vs. Rever erse oltage Reverse Clamping oltage c () Waveform Parameters: tr = 8µs td = 20µs CJ(R) / CJ(R=0) Peak Pulse Current I pp () Reverse oltage R () f = 1 MHz Insertion Loss S21 CH1 S21 LOG 6 db / REF 0 db STRT. 030 MHz STOP MHz 2008 Semtech Corp. 3

4 pplications Information Device Connection Options The µclamp3301d is designed to protect one I/O, or power supply line. It will present a high impedance to the protected line up to 3.3 volts. It will turn on when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. Device Schematic & Pin Configuration Due to the snapback characteristics of the low voltage TS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage ( SB ) as the device can latch on as described below. EPD TS Characteristics The µclamp3301d is constructed using Semtech s proprietary EPD technology. The structure of the EPD TS is vastly different from the traditional pnjunction devices. t voltages below 5, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the µclamp3301d can effectively operate at 3.3 while maintaining excellent electrical characteristics. The EPD TS employs a complex nppn structure in contrast to the pn structure normally found in traditional siliconavalanche TS diodes. Since the EPD TS devices use a 4layer structure, they exhibit a slightly different I characteristic curve when compared to conventional devices. During normal operation, the device represents a highimpedance to the circuit up to the device working voltage ( RWM ). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage ( PT ) is exceeded. Unlike a conventional device, the low voltage TS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TS is conducting current, it will exhibit a slight snapback or negative resistance characteristics due to its structures. This point is defined on the curve by the snapback voltage ( SB ) and snapback EPD TS I Characteristic Curve F IPP I SB I PT I R RWM SB PT C current (I SB ). To return to a nonconducting state, the current through the device must fall below the I SB (approximately <50m) and the voltage must fall below the SB (normally 2.8 volts for a 3.3 device). If a 3.3 TS is connected to 3.3 DC source, it will never fall below the snapback voltage of 2.8 and will therefore stay in a conducting state. I F 2008 Semtech Corp. 4

5 Outline Drawing SOD323 E1 E DIM 1 2 b c D E1 E L N DIMENSIONS INCHES MILLIMETERS MIN NOM MX MIN NOM MX D 2 H 1 GGE PLNE DETIL L c SIDE IEW SEE DETIL NOTES: 1. CONTROLLING DIMENSIONS RE IN INCHES (NGLES IN DEGREES). 2. DIMENSIONS "E1" ND "D" DO NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. Land Pattern SOD323 X DIMENSIONS DIM C INCHES (.085) MILLIMETERS (2.15) (C) G Z G Y X Y Z NOTES: 1. THIS LND PTTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MNUFCTURING GROUP TO ENSURE YOUR COMPNY'S MNUFCTURING GUIDELINES RE MET Semtech Corp. 5

6 Marking Code Ordering Information 3U Part Number uclamp3301d.tct Working oltage Qty per Reel Reel Size 3.3 3,000 7 MicroClamp, uclamp, and µclamp are marks of Semtech Corporation Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, C Phone: (805) FX (805) Semtech Corp. 6