Transient Voltage Suppression Diodes. Surface Mount 400W > SMAJ series. Description. Features. less than 1μA when V BR.
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1 SMAJ Series RoHS Pb e3 Uni-directional Description Bi-directional The SMAJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Agency Approvals AGENCY AGENCY FILE NUMBER E23531 Maximum Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted Parameter Symbol Value Unit Peak Pulse Power Dissipation at T A =25ºC by 1/µs Waveform P PPM 4 W (Fig.2(Note 1, (Note 2, (Note 5 Power Dissipation on Infinite Heat Sink at T L =5 O C P D 3.3 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3 I FSM 6 A Maximum Instantaneous Forward Voltage at 25A for Unidirectional V F 3.5/5. V Only (Note 4 Operating Temperature Range T J -65 to 15 C Storage Temperature Range T STG -65 to 175 C Typical Thermal Resistance Junction to Lead Typical Thermal Resistance Junction to Ambient R θjl 3 C/W R θja 12 C/W Features 4W Peak pulse power capability at 1/µs waveform, repetition rate (duty cycle:.1% Excellent clamping capability Typical I R less than 1μA when V BR min>12v For surface mounted applications to optimize board space Low profile package Typical failure mode is short from over-specified voltage or current Whisker test is conducted based on JEDEC JESD21A per its table 4a and 4c IEC ESD 3kV(Air, 3kV (Contact ESD protection of data lines in accordance with IEC EFT protection of data lines in accordance with IEC Built-in strain relief Fast response time: typically less than 1.ps from Volts to V BR min Glass passivated junction Low inductance High temperature to reflow soldering guaranteed: 26 C/4sec V T J = V C x (1+αT x (T J - 25 (αt:temperature Coefficient, typical value is.1% Plastic package is flammability rated V- per Underwriters Laboratories Meet MSL level1, per J-STD-2, LF maximun peak of 26 C Matte tin lead free Plated Halogen free and RoHS compliant Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(sn (IPC/JEDEC J-STD- 69A.1 Notes: 1. Non-repetitive current pulse, per Fig.4 and derated above T J (initial =25ºC per Fig Mounted on 5.x5.mm copper pad to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only. 4. V F < 3.5V for single die parts and V F < 5.V for stacked-die parts. 5. The P PPM of stacked-die parts is 6W and please contact littelfuse for the detail stacked-die parts. Functional Diagram Applications TVS devices are ideal for the protection of I/O Interfaces, V CC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Additional Infomarion Bi-directional Datasheet Resources Samples Cathode Anode Uni-directional
2 Electrical Characteristics (T A =25 C unless otherwise noted Part Number (Uni Part Number (Bi Marking Reverse Stand off Voltage V R Breakdown Voltage V BR I T UNI BI (Volts MIN MAX Test Current I T (ma Maximum Clamping Voltage V I pp (V Maximum Peak Pulse Current I pp (A Maximum Reverse Leakage I V R (µa SMAJ5.A SMAJ5.CA AE WE X SMAJ6.A SMAJ6.CA AG WG X SMAJ6.5A SMAJ6.5CA AK WK X SMAJ7.A SMAJ7.CA AM WM X SMAJ7.5A SMAJ7.5CA AP WP X SMAJ8.A SMAJ8.CA AR WR X SMAJ8.5A SMAJ8.5CA AT WT X SMAJ9.A SMAJ9.CA AV WV X SMAJ1A SMAJ1CA AX WX X SMAJ11A SMAJ11CA AZ WZ X SMAJ12A SMAJ12CA BE XE X SMAJ13A SMAJ13CA BG XG X SMAJ14A SMAJ14CA BK XK X SMAJ15A SMAJ15CA BM XM X SMAJ16A SMAJ16CA BP XP X SMAJ17A SMAJ17CA BR XR X SMAJ18A SMAJ18CA BT XT X SMAJ2A SMAJ2CA BV XV X SMAJ22A SMAJ22CA BX XX X SMAJ24A SMAJ24CA BZ XZ X SMAJ26A SMAJ26CA CE YE X SMAJ28A SMAJ28CA CG YG X SMAJ3A SMAJ3CA CK YK X SMAJ33A SMAJ33CA CM YM X SMAJ36A SMAJ36CA CP YP X SMAJ4A SMAJ4CA CR YR X SMAJ43A SMAJ43CA CT YT X SMAJ45A SMAJ45CA CV YV X SMAJ48A SMAJ48CA CX YX X SMAJ51A SMAJ51CA CZ YZ X SMAJ54A SMAJ54CA RE ZE X SMAJ58A SMAJ58CA RG ZG X SMAJ6A SMAJ6CA RK ZK X SMAJ64A SMAJ64CA RM ZM X SMAJ7A SMAJ7CA RP ZP X SMAJ75A SMAJ75CA RR ZR X SMAJ78A SMAJ78CA RT ZT X SMAJ85A SMAJ85CA RV ZV X SMAJ9A SMAJ9CA RX ZX X SMAJA SMAJCA RZ ZZ X SMAJ11A SMAJ11CA SE VE X SMAJ12A SMAJ12CA SG VG X SMAJ13A SMAJ13CA SK VK X SMAJ15A SMAJ15CA SM VM X SMAJ16A SMAJ16CA SP VP X SMAJ17A SMAJ17CA SR VR X SMAJ18A SMAJ18CA ST VT SMAJ2A SMAJ2CA SV VV SMAJ22A SMAJ22CA SX VX SMAJ25A SMAJ25CA SZ VZ SMAJ3A SMAJ3CA TE UE SMAJ35A SMAJ35CA TG UG SMAJ4A SMAJ4CA TK UK SMAJ44A SMAJ44CA TM UM For bidirectional type having V R of 1 volts and less, the I R limit is double. For parts without A, the V BR is ± 1% and V C is 5% higher than with A parts Agency Approval
3 I-V Curve Characteristics Uni-directional Bi-directional Ipp Vc VBR VR IR IT VF V Vc VBR VR IT IR IR IT VRVBR Vc V Ipp Ipp P PPM Peak Pulse Power Dissipation -- Max power dissipation V R Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation V BR Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (I T V C Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current I R V F Reverse Leakage Current -- Current measured at V R Forward Voltage Drop for Uni-directional Ratings and Characteristic Curves (T A =25 C unless otherwise noted Figure 1 - TVS Transients Clamping Waveform Figure 2 - Peak Pulse Power Rating Curve Voltage Transients Voltage or Current Voltage Across TVS Current Through TVS P PPM -Peak Pulse Power (kw 1 1 Single die,4w at 1xµs, 25 C TJ initial = Tamb stacked-die, 6W at 1xµs, 25 C t d -Pulse Width (ms Time continues on next page.
4 Ratings and Characteristic Curves (T A =25 C unless otherwise noted (Continued Figure 3 - Peak Pulse Power Derating Curve Figure 4 - Pulse Waveform Peak Pulse Power (P PP or Current (I PP Derating in Percentage % T J - Initial Junction Temperature (ºC I PPM - Peak Pulse Current, % I RSM 15 5 td tr=1µsec Peak Value IPPM Half Value IPPM 2 IPPM ( TJ=25 C Pulse Width(td is defined as the point where the peak current decays to 5% of IPPM 1/µsec. Waveform as defined by R.E.A t-time (ms Figure 5 - Typical Junction Capacitance Figure 6 - Typical Transient Thermal Impedance Cj (pf 1 1 Uni-direc onal V=V Uni/Bi-direc onal V=V R Bi-direc onal V=V 1 1 V BR - Reverse Breakdown Voltage (V Transient Thermal Impedance ( C/W T -Pulse Duration (s P Figure 7 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Figure 8 - Peak Forward Voltage Drop vs Peak Forward Current (Typical Values 7. IFSM - Peak Forward Surve Current (A IF-Peak Forward Current (A Single die Stacked-die 1 1 Number of Cycles at 6 Hz VF-Peak Forward Voltage(V
5 Temperature (T Transient Voltage Suppression Diodes Soldering Parameters Reflow Condition Pre Heat Physical Specifications Lead free assembly - Temperature Min (T s(min 15 C - Temperature Max (T s(max 2 C - Time (min to max (t s 6 18 secs Average ramp up rate (Liquidus Temp (T A to peak T S(max to T A - Ramp-up Rate Reflow - Temperature (T A (Liquidus 217 C 3 C/second max 3 C/second max - Time (min to max (t s 6 15 seconds Peak Temperature (T P 26 +/-5 C Time within 5 C of actual peak Temperature (t p 2 4 seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P 8 minutes Max. Do not exceed 26 C T P T L T s(max T s(min 25 C t s Preheat t 25 C to Peak Environmental Specifications High Temp. Storage HTRB Ramp-up Time (t t p JESD22-A13 JESD22-A18 t L Critical Zone T L to T P Ramp-down Weight Case Polarity.2 ounce,.61 gram JEDEC DO-214AC Molded Plastic over glass passivated junction Color band denotes cathode except Bipolar Temperature Cycling JESD22-A14 MSL JEDEC-J-STD-2, Level 1 H3TRB JESD22-A11 Terminal Matte Tin-plated leads, Solderable per JESD22-B12 RSH JESD22-A111 Dimensions DO-214AC (SMA Cathode Band (for Uni-directional products only Dimensions Inches Millimeters Min Max Min Max A C A B C B D D H E F G E J F G K L H I J I K L Solder Pads (all dimensions in mm
6 Part Numbering System Part Marking System SMAJ XXX C A Cathode Band (for Uni-directional products only F Littelfuse Logo SERIES BI-DIRECTIONAL V R VOLTAGE 5% V BR VOLTAGE TOLERANCE XX YMXXX Marking Code Trace Code Marking Y:Year Code M: Month Code XXX: Lot Code Packaging Part number Component Package Quantity Packaging Option Packaging Specification SMAJ-xxxXX DO-214AC 5 Tape & Reel - 12mm tape/13 reel EIA STD RS-481 Tape and Reel Specification.47 ( (4. Cathode.157 (4..59 DIA (1.5 Cover tape.8 (2.2 Arbor Hole Dia. 13. (33 Dimensions are in inches (and millimeters..49 (12.5 Direction of Feed
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MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
MADP-000504-10720T. Non Magnetic MELF PIN Diode
MADP-54-172T Features High Power Handling Low Loss / Low Distortion Leadless Low Inductance MELF Package Non-Magnetic Surface Mountable RoHS Compliant MSL 1 Package Style 172 Dot Denotes Cathode Description
SK54B SCHOTTKY RECTIFIER
Applications: SCHOTTKY RECTIFIER Features: Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Small foot print, surface mountable Very low forward
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
uclamp3301d Low Voltage µclamp TM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClamp TM Description Features Mechanical Characteristics
MicroClamp TM Description The µclamp TM series of Transient oltage Suppressors (TS) are designed to replace multilayer varistors (MLs) in portable applications such as cell phones, notebook computers,
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
SM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).
Transil Features Peak pulse power: 600 W (10/1000 µs) 4 kw (8/20 µs) Breakdown voltage range: from 6.8 V to 220 V Unidirectional and bidirectional types Low leakage current: 0.2 µa at 25 C 1 µa at 85 C
NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.
Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,
STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features
Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5
Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units
Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
W- Series. Features: WOB. Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Page <1> 15/07/08 V1.
Features: Surge overload ratings to 40 amperes peak. Ideal for printed circuit board. Reliable low cost construction. High temperature soldering guaranteed: 260 C/10 seconds/0.375inch (9.5mm) lead lengths
RClamp0522PA RClamp0524PA
PROTECTION PRODUCTS - RailClamp Description RailClamp TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data interfaces. This series has been specifically designed
SMBJ Transient Voltage Suppressor Diode Series
*RoHS OMPLINT eatures n RoHS compliant* n Surface Mount SM package n Standoff Voltage: 5 to 495 volts n Power issipation: 600 watts pplications n I 600-4-2 S (Min. Level 4) n I 600-4-4 T n I 600-4-5 Surge
LC01-6. Low Capacitance TVS for High-Speed Telecommunication Systems. PROTECTION PRODUCTS Description. Features. Applications
escription The transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge
S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor
Transient Voltage Suppressor SMBJ5.0 - SMBJ440CA
Features: Glass passivated junction Low incremental surge resistance, excellent clamping capability 600W peak pulse power capability with a 10/1,000μs waveform, repetition rate (duty cycle): 0.01% Very
STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A
CLA4607-085LF: Surface Mount Limiter Diode
DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold
MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
HFA15TB60 HFA15TB60-1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
High flux for outdoor applications
General Illumination LUXEON R High flux for outdoor applications LUXEON R brings illumination grade LED light sources to outdoor and industrial lighting applications and makes it easier than ever to design
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
IN1M101 Precision AC Brown-out Supervisor IC
Precision AC Brown-out Supervisor IC Rev.1.1 03 30 2011 Specification General Description provides a precise comparator to detect the rectified AC voltage, which could protect the SPS when AC voltage is
MUR1520 MURB1520 MURB1520-1
MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/
Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
DOMINANT. Opto Technologies Innovating Illumination. InGaN White S-Spice : SSW-SLD DATA SHEET: SpiceLED TM. Features: Applications:
DATA SHEET: SpiceLED TM SpiceLED TM Like spice, its diminutive size is a stark contrast to its standout performance in terms of brightness, durability and reliability. Despite being the smallest in size
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF55 High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 26 DESCRIPTION TSFF55 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high
SLVU2.8. PROTECTION PRODUCTS Absolute Maximum Rating. Electrical Characteristics I T I PP V R I PT I F. www.semtech.com. 2008 Semtech Corp.
Description The SL series of transient voltage suppressors are designed to protect low voltage, state-of-the-art MOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
