SM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).
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1 Transil Features Peak pulse power: 600 W (10/1000 µs) 4 kw (8/20 µs) Breakdown voltage range: from 6.8 V to 220 V Unidirectional and bidirectional types Low leakage current: 0.2 µa at 25 C 1 µa at 85 C Operating T j max : 150 C High power capability at T jmax : 515 W (10/1000 µs) JEDEC registered package outline Complies with the following standards IEC level 4: 15 kv (air discharge) 8 kv (contact discharge) IEC MIL STD 883G, method : class 3B: 25 kv HBM (human body model) UL 497B, file number: QVGQ2.E Resin meets UL 94, V0 MIL-STD-750, method 2026 soldererability EIA STD RS-481 and IEC packing IPC 7531 footprint K Description A Unidirectional Bidirectional SMB (JEDEC DO-214AA) The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC and MIL STD 883, method 3015, and electrical overstress according to IEC and 5. These devices are more generally used against surges below 600 W (10/1000 µs). Planar technology makes these devices suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. SM6T are packaged in SMB (SMB footprint in accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics October 2010 Doc ID 3082 Rev 9 1/
2 Characteristics SM6T 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit P PP Peak pulse power dissipation (1) T j initial = T amb 600 W T stg Storage temperature range -65 to 150 T j Operating junction temperature range -55 to 150 T L Maximum lead temperature for soldering during 10 s. 260 C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance Symbol Parameter Value Unit R th(j-l) Junction to leads 20 C/W R th(j-a) Junction to ambient on printed circuit on recommended pad layout 100 C/W Figure 1. Electrical characteristics - definitions I I Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage VRM IPP Peak pulse current αt Voltage temperature coefficient VF Forward voltage drop R Dynamic resistance D Unidirectional V CL V BR V RM I F I RM I R I PP V F V V CL V BR V RM I PP I R I RM IRM I R I PP V V RM V BR V CL Bidirectional Figure 2. Pulse definition for electrical characteristics Repetitive pulse current tr = rise time (µs) tp = pulse duration time (µs) tr tp 2/10 Doc ID 3082 Rev 9
3 Characteristics Table 3. Electrical characteristics, parameter values (T amb = 25 C) Order code I RM max@v RM V R (1) V PP 10/1000 µs R D 10/1000 µs V PP 8/20 µs R D 8/20 µs αt (2) 25 C 85 C min typ max max max max µa V V ma V (3) A (4) Ω V (3) A (4) Ω 10-4/ C SM6T6V8A/CA SM6T7V5A/CA SM6T10A/CA SM6T12A/CA SM6T15A/CA SM6T18A/CA SM6T22A/CA SM6T24A/CA SM6T27A/CA SM6T30A/CA SM6T33A/CA SM6T36A/CA SM6T39A/CA SM6T56A/CA SM6T68A/CA SM6T75A/CA SM6T100A/CA SM6T150A/CA SM6T200A/CA SM6T220A/CA Pulse test : t p < 50 ms 2. To calculate V BR versus junction temperature, use the following formula: V T J = V 25 C x (1 + αt x (T J 25)). 3. To calculate maximum clamping voltage at other surge level, use the following formula: V CL = R D x I PP + V BRmax. 4. Surge capability given for both directions for unidirectional and bidirectional types. Doc ID 3082 Rev 9 3/10
4 Characteristics SM6T Figure 3. Peak power dissipation versus initial junction temperature Figure 4. Peak pulse power versus exponential pulse duration 700 P pp (W) P PP (kw) T j initial = 25 C T j ( C) t P (ms) 1.0E E E E E+01 Figure 5. Clamping voltage versus peak pulse current (maximum values) I PP (A) T j initial=25 C /20 µs 10/1000 µs SM6T6V8A SM6T15A SM6T30A SM6T68A SM6T100A SM6T220A 10 ms V CL (V) /10 Doc ID 3082 Rev 9
5 Characteristics Figure 6. Capacitance versus reverse applied voltage for unidirectional types (typical values) Figure 7. Capacitance versus reverse applied voltage for bidirectional types (typical values) C (pf) SM6T6V8A F=1 MHz V osc =30 mv RMS T j =25 C C (pf) SM6T6V8CA SM6T15CA F=1 MHz V osc =30 mv RMS T j =25 C SM6T15A SM6T30CA SM6T30A SM6T68CA 100 SM6T68A 100 SM6T100CA SM6T100A SM6T220CA V R (V) SM6T220A V R (V) Figure E+02 I FM (A) Peak forward voltage drop versus peak forward current (typical values) Figure Zth (j-a)/rth (j-a) Relative variation of thermal impedance junction to ambient versus pulse duration Recommended pad layout Printed circuit board FR4, copper thickness = 35 µm 1.0E+01 T j =125 C 1.0E+00 T j =25 C E E-02 V FM (V) tp s E E E E E E E+03 Figure R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under each lead S Cu (cm²) (printed circuit board FR4, copper thickness = 35 µm) Figure E+03 1.E+02 1.E+01 1.E+00 1.E-01 I R (na) V R =V RM V RM < 10 V Leakage current versus junction temperature (typical values) V R =V RM V RM 10 V T ( C) j Doc ID 3082 Rev 9 5/10
6 Ordering information scheme SM6T 2 Ordering information scheme Figure 12. Ordering information scheme SM 6 T 100 CA Surface mount Peak pulse power 6 = 600 W Transil in SMB Breakdown voltage 100 = 100 V Types CA = Bidirectional A = Unidirectional 6/10 Doc ID 3082 Rev 9
7 Packaging information 3 Packaging information Case: JEDEC DO-214AA molded plastic over planar junction Terminals: solder plated, solderable as per MIL-STD-750, Method 2026 Polarity: for unidirectional types the band indicates cathode Flammability: epoxy meets UL 94, V0 RoHS package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 4. SMB dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A A E b c C L A1 A2 b D E E L Figure 13. SMB footprint dimensions in mm (inches) Figure 14. Marking layout (1) (0.064) (0.102) 1.62 (0.064) Cathode bar (unidirectional devices only ) 5.84 (0.23) 2.18 (0.086) e x x x z y w w e: ECOPACK compliance XXX: Marking Z: Manufacturing location Y: Year WW: Week 1. Marking layout can vary according to assembly location. Doc ID 3082 Rev 9 7/10
8 Packaging information SM6T Table 5. Marking Order code Marking Order code Marking SM6T6V8A DE SM6T6V8CA LE SM6T7V5A DG SM6T7V5CA LG SM6T10A DP SM6T10CA LP SM6T12A DT SM6T12CA LT SM6T15A DX SM6T15CA LX SM6T18A EE SM6T18CA ME SM6T22A EK SM6T22CA MK SM6T24A EM SM6T24CA MM SM6T27A EP SM6T27CA MP SM6T30A ER SM6T30CA MR SM6T33A ET SM6T33CA MT SM6T36A EV SM6T36CA MV SM6T39A EX SM6T39CA MX SM6T56A FL SM6T56CA NL SM6T68A FQ SM6T68CA NQ SM6T75A FS SM6T75CA NS SM6T100A FY SM6T100CA NY SM6T150A GL SM6T150CA OL SM6T200A GU SM6T200CA OU SM6T220A GW SM6T220CA OW 8/10 Doc ID 3082 Rev 9
9 Ordering information 4 Ordering information Table 6. Ordering information Order code Marking Package Weight Base qty Delivery mode SM6TxxxA/CA (1) See Table 5 on page 8 SMB 0.11 g 2500 Tape and reel 1. Where xxx is nominal value of V BR and A or CA indicates unidirectional or bidirectional version. See Table 3 for list of available devices and their order codes 5 Revision history Table 7. Document revision history Date Revision Changes August A Previous update. 15-Sep Mar May Types table parameters on page 2: I T j = 85 C condition added 2. I RM max values changed Reformatted to current standard. SMB dimensions and footprint updated. Maximum junction temperature replaced with operating junction temperature range in Table 1. Reformatted to current standard. Added standards compliance information on page 1. Added device SM6T56 to Table 3. Updated all characteristic curves. 17-Sep Document updated for low leakage current. 20-Oct Updated Figure 13. Doc ID 3082 Rev 9 9/10
10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Doc ID 3082 Rev 9
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Application note Low cost PCB antenna for 2.4GHz radio: Meander design 1 Introduction This application note is dedicated to the STM32W108 product family from STMicroelectronics. One of the main reasons
STCS2A. 2 A max constant current LED driver. Features. Applications. Description
2 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 2 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic Slope control with
NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
BTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description
12 A Snubberless, logic level and standard triacs Features Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q)
STOD2540. PMOLED display power supply. Features. Application. Description
PMOLED display power supply Features Inductor switches boost controller PFM mode control High efficiency over wide range of load (1 ma to 40 ma) Integrated load disconnect switch Over voltage protection
Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
BTW69-1200N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications
50 1200 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications
PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
AN2389 Application note
Application note An MCU-based low cost non-inverting buck-boost converter for battery chargers Introduction As the demand for rechargeable batteries increases, so does the demand for battery chargers.
AN3110 Application note
Application note Using the STVM100 to automatically adjust VCOM voltage in e-paper Introduction The widespread use of multimedia electronic devices, coupled with environmental concerns over the manufacturing
AN2604 Application note
AN2604 Application note STM32F101xx and STM32F103xx RTC calibration Introduction The real-time clock (RTC) precision is a requirement in most embedded applications, but due to external environment temperature
AN4108 Application note
Application note How to set up a HTTPS server for In-Home display with HTTPS Introduction This application note describes how to configure a simple SSL web server using the EasyPHP free application to
MC34063AB, MC34063AC, MC34063EB, MC34063EC
MC34063AB, MC34063AC, MC34063EB, MC34063EC DC-DC converter control circuits Description Datasheet - production data Features DIP-8 SO-8 Output switch current in excess of 1.5 A 2 % reference accuracy Low
Obsolete Product(s) - Obsolete Product(s)
32 W hi-fi audio power amplifier Features High output power (50 W music power IEC 268.3 rules) High operating supply voltage (50 V) Single or split supply operations Very low distortion Short-circuit protection
VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl
ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection
PMEG3005EB; PMEG3005EL
Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
TS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption:
Low-power single CMOS timer Description Datasheet - production data The TS555 is a single CMOS timer with very low consumption: Features SO8 (plastic micropackage) Pin connections (top view) (I cc(typ)
BTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
FLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.
Application Specific iscretes A.S.. LC21-135A LOW POWER IRE LIGHTER CIRCUIT EATURES EICATE THYRISTOR STRUCTURE OR CAPACITIVE ISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY I RM =90A @ tp=10µs
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) Description
Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) Data brief Low-drop post regulator and high-efficiency step-up PWM with integrated power N-MOS allowing
STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
AN2866 Application note
Application note How to design a 13.56 MHz customized tag antenna Introduction RFID (radio-frequency identification) tags extract all of their power from the reader s field. The tags and reader s antennas
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) 2 Lower C RES / C IES ratio (no cross-conduction susceptibility)
M4T28-BR12SH M4T32-BR12SH
M4T28-BR12SH M4T32-BR12SH TIMEKEEPER SNAPHAT (battery and crystal) Features Provides battery backup power for non-volatile TIMEKEEPER and supervisor devices in the 28- or 44-pin SNAPHAT SOIC package Removable
HCF4010B HEX BUFFER/CONVERTER (NON INVERTING)
HEX BUFFER/CONVERTER (NON INVERTING) PROPAGATION DELAY TIME: t PD = 50ns (Typ.) at V DD = 10V C L = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT
Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
