Transient Voltage Suppressor SMBJ5.0 - SMBJ440CA
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1 Features: Glass passivated junction Low incremental surge resistance, excellent clamping capability 600W peak pulse power capability with a 10/1,000μs waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250 C/10 secs at terminals Mechanical Data: Case: JEDEC DO-214AA moulded plastic over glass passivated junction Polarity: Foruni-directional types the colour band denotes the cathode, which is positive with respect to the anode under normal TVS operation Weight: oz, 0.093g Devices for Bidirectional Applications: For bi-directional deviced, use suffix C or CA (eg SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions. No colour band on bi-directional devices. Maximum Ratings & Characteristics: T a =25 C Characteristics Symbol Value Unit Peak power dissiation with a 10/1,000μs waveform (Note 1, 2, Fig 1) P PPM Minimum 600 W Peak pulse current with a 10/1,000μs waveform (Note 1) I PPM See table below A Peak forward surge current, 8.3ms single half sine-wave uni- directional only (Note 2) I FSM 100 A Typical thermal resistance, junction to ambient (Note 3) R thja 100 C/W Typical thermal resistance, junction to lead R thjl 20 C/W Operational junction and storage temperature range T J, T STG -55 to +150 C Notes: 1. Non-repetitive current pulses, per Fig.3 and derated above T A =25 C per Fig.2 2. Mounted on 0.2ʺ 0.2ʺ (5mm 5mm) copper pads to each terminal 3. Mounted on minimum recommended pad layout Page <1> 24/09/14 V1.1
2 Electrical Characteristics: T a F I F =50A (uni-directional only) Part Number Add C for Bi-directional Device Marking Code UNI BI Min V (BR) V WM I WM I PPM V I PPM Max ma (@ I T ) V A A V SMBJ5.0 (C) KD AD SMBJ5.0 (C)A KE AE SMBJ6.0 (C) KF AF SMBJ6.0 (C)A KG AG SMBJ6.5 (C) KH AH SMBJ6.5 (C)A KK AK SMBJ7.0 (C) KL AL SMBJ7.0 (C)A KM AM SMBJ7.5 (C) KN AN SMBJ7.5 (C)A KP AP SMBJ8.0 (C) KQ AQ SMBJ8.0 (C)A KR AR SMBJ8.5 (C) KS AS SMBJ8.5 (C)A KT AT SMBJ9.0 (C) KU AU SMBJ9.0 (C)A KV AV SMBJ10 (C) KW AW SMBJ10 (C)A KX AX SMBJ11 (C) KY AY SMBJ11 (C)A KZ AZ SMBJ12 (C) LD BD SMBJ12 (C)A LE BE SMBJ13 (C) LF BF SMBJ13 (C)A LG BG SMBJ14 (C) LH BH SMBJ14 (C)A LK BK SMBJ15 (C) LL BL SMBJ15 (C)A LM BM SMBJ16 (C) LN BN SMBJ16 (C)A LP BP SMBJ17 (C) LQ BQ Parts may be marked with full part number OR Device marking code depending on production criteria. Page <2> 24/09/14 V1.1
3 Electrical Characteristics: T a F I F =50A (uni-directional only) Part Number Add C for Bi-directional Device Marking Code UNI BI Min V (BR) V WM I WM I PPM V I PPM Max ma (@ I T ) V A A V SMBJ17 (C)A LR BR SMBJ18 (C) LS BS SMBJ18 (C)A LT BT SMBJ20 (C) LU BU SMBJ20 (C)A LV BV SMBJ22 (C) LW BW SMBJ22 (C)A LX BX SMBJ24 (C) LY BY SMBJ24 (C)A LZ BZ SMBJ26 (C) MD CD SMBJ26 (C)A ME CE SMBJ28 (C) MF CF SMBJ28 (C)A MG CG SMBJ30 (C) MH CH SMBJ30 (C)A MK CK SMBJ33 (C) ML CL SMBJ33 (C)A MM CM SMBJ36 (C) MN CN SMBJ36 (C)A MP CP SMBJ40 (C) MQ CQ SMBJ40 (C)A MR CR SMBJ43 (C) MS CS SMBJ43 (C)A MT CT SMBJ45 (C) MU CU SMBJ45 (C)A MV CV SMBJ48 (C) MW CW SMBJ48 (C)A MX CX SMBJ51 (C) MY CY SMBJ51 (C)A MZ CZ SMBJ54 (C) ND DD SMBJ54 (C)A NE DE Parts may be marked with full part number OR Device marking code depending on production criteria. Page <3> 24/09/14 V1.1
4 Electrical Characteristics: T a F I F =50A (uni-directional only) Part Number Add C for Bi-directional Device Marking Code UNI BI Min V (BR) V WM I WM I PPM V I PPM Max ma (@ I T ) V A A V SMBJ58 (C) NF DF SMBJ58 (C)A NG DG SMBJ60 (C) NH DH SMBJ60 (C)A NK DK SMBJ64 (C) NL DL SMBJ64 (C)A NM DM SMBJ70 (C) NN DN SMBJ70 (C)A NP DP SMBJ75 (C) NQ DQ SMBJ75 (C)A NR DR SMBJ78 (C) NS DS SMBJ78 (C)A NT DT SMBJ85 (C) NU DU SMBJ85 (C)A NV DV SMBJ90 (C) NW DW SMBJ90 (C)A NX DX SMBJ100 (C) NY DY SMBJ100 (C)A NZ DZ SMBJ110 (C) PD ED SMBJ110 (C)A PE EE SMBJ120 (C) PF EF SMBJ120 (C)A PG EG SMBJ130 (C) PH EH SMBJ130 (C)A PK EK SMBJ150 (C) PL EL SMBJ150 (C)A PM EM SMBJ160 (C) PN EN SMBJ160 (C)A PP EP SMBJ170 (C) PQ EQ SMBJ170 (C)A PR ER Parts may be marked with full part number OR Device marking code depending on production criteria. Page <4> 24/09/14 V1.1
5 Dimensions: DO-214AA(SMB) Dimensions : Millimetres Ratings & Characteristic Curves: Page <5> 24/09/14 V1.1
6 Important Notice : This data sheet and its contents (the Information ) belong to the members of the Premier Farnell group of companies (the Group ) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group s liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc2014. Page <6> 24/09/14 V1.1
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MUR1520 MURB1520 MURB1520-1
MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
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TIP31, TIP32 High Power Bipolar Transistor
Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.
BAS70 series; 1PS7xSB70 series
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Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
Samknows Broadband Report
Samknows Broadband Report London Borough of Enfield This report describes the current broadband landscape for the London Borough of Enfield both in terms of general availability and choice, and in terms
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
Barrie Region Hamilton Region
Barrie Region Sutton L0E ON LORETTO L0G 1L0 ON TOTTENHAM L0G 1W0 ON Beaverton L0K ON Brechin L0K ON Washago L0K ON Elmvale L0L ON Stayner L0M ON SHELBURNE L0N ON HONEY WOOD L0N 1H0 ON Orillia L3V ON Newmarket
STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A
Manpower Codes Lookup
00 NO PREFERENCE RECORDED 01 NO RELIGIOUS PREFERENCE 02 SEVENTH-DAY ADVENTIST 04 ASSEMBLIES OF GOD 05 GRACE GOSPEL FELLOWSHIP 06 AMERICAN BAPTIST CHURCHES 07 INDEPENDENT BAPTIST BIBLE MISSION 08 SOUTHERN
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
PSTN. Gateway. Switch. Supervisor PC. Ethernet LAN. IPCC Express SERVER. CallManager. IP Phone. IP Phone. Cust- DB
M IPCC EXPRESS Product Solution (IPCC - IP Co n t a c t Ce n t e r ) E i n f ü h r u n g Ü b e r h u nd e r t M il l io ne n N u t ze r - P r o g no s e n zu f o l g e w e r d e n e s in d ie s e m J ah
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified