Lecture 15. Advanced Technology Platforms. Background and Trends State-of-the-Art CMOS Platforms
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1 Lecture 15 Advanced Technology Platforms Background and Trends State-of-the-Art CMOS Platforms Reading: multiple research articles (reference list at the end of this lecture)
2 Technology and Applications 11/24/2013 Nuo Xu EE 290D, Fall
3 Evolution of the Mainstream Computing Media top 10 mobile trends feb
4 PC/Server: Microarchitecture Trends Source: Intel 65nm 45nm 32nm 22nm 14nm 10nm? Mobile: nm? 11/24/2013 Nuo Xu EE 290D, Fall
5 State-of-the-Art MPUs Server: PC: Processor Architecture Technology Foundry Frequency Xeon E5 Core i7 Ivy Bridge 22nm TriGate Opteron 4200 Piledriver 32nm FX-8350 PDSOI Intel Globalfoundries GHz GHz GHz GHz Mobile: A6 ARMv7 32nm Samsung 1.3 GHz A7 ARMv8a 28nm Samsung 1.8 GHz Tegra 4 Cortex A15 28nm HPL TSMC Tegra 4i Cortex A9 32nm LP Samsung 1.7 GHz Snapdragon 800 Snapdragon 600 Exynos 5 Octa (5410) Exynos 4 Quad (4412) Krait nm LP TSMC 1.9 GHz Krait nm HPM TSMC 2.3 GHz Cortex A15 28nm LP Samsung 1.8 GHz Cortex A7 32nm LP Samsung 1.6 GHz 11/24/2013 Nuo Xu EE 290D, Fall
6 Mobile MPU/SoC Technology Trends Source: TSMC (2012) Technology (more than V TH ) varies for different applications, because of performance specifications and cost purposes. Due to the process complexity and transistor structural change, future technology nodes will likely introduce small variations for different applications. 11/24/2013 Nuo Xu EE 290D, Fall
7 90nm Platforms NMOS XTEM PMOS XTEM Process Flow Short Channel Effect I OFF vs. I ON plots PMOS NMOS NMOS PMOS Structure: planar bulk Strained-Si technology: esige for PMOS; scesl for NMOS V DD = 1.2V; L g,nmos = 45nm; L g,pmos = 50nm 11/24/2013 Nuo Xu EE 290D, Fall 2013 T. Ghani, IEDM (2003) 7
8 65nm Platforms NMOS XTEM PMOS XTEM Mobility Enhancement NMOS PMOS 65 nm 65 nm 90 nm 90 nm Layout Dependent Stress Delay vs. Tech. Gen. Architecture Innovation ~ 0.73x L g = 35nm Dual-Poly/SiON process 11/24/2013 Nuo Xu EE 290D, Fall 2013 S. Tyagi, IEDM (2005) 8
9 45nm Platforms NMOS XTEM PMOS XTEM TCAD Simulation of PMOS S xx SiGe SiGe I OFF vs. I ON plots Perf. Improvement over 65nm Tensile Contact & Compressive Gate Stress on NMOS Strained-Si technology: esige for PMOS; SMT for NMOS High-κ First + Metal Gate Last V DD = 1.0V; L g,hp = 35nm; L g,lp = 45nm C. Auth, VLSI-T (2008) 11/24/2013 Nuo Xu EE 290D, Fall 2013 C.-H. Jan, IEDM (2008) 9
10 XTEMs 32nm Platforms Gate pitch scaling can continue for some generations I OFF vs. I dlin plots Raised Source/Drain High- κ + Metal Gate Last L g,hp = 36nm, the performance benefit by reducing L g stops from this node. 11/24/2013 Nuo Xu EE 290D, Fall 2013 P. Packan, IEDM (2009) 10
11 28nm Foundry Platforms Process Flow PMOS XTEM I OFF vs. I ON plots SiGe SiGe 6T SRAM SEM SNM & V DDmin Poly Si/SiON gate stack EOT elec = 1.93nm tcesl+smt for NMOS; esige for PMOS V DD = 1.0/0.7V Cu/Ultra Low-κ (2.5)/11 MLs for BEOL w/o HKMG Low Cost + High Yield 11/24/2013 Nuo Xu EE 290D, Fall 2013 C.W. Liang, VLSI-T (2011) 11
12 28nm Foundry Platforms (Cont d) I OFF vs. I ON plots Delay vs. Power plots LOP LSTP SRAM SNM LOP LSTP LOP and LSTP can be achieved by V TH tuning V DD,LSTP = 1.1 V; V DD,LOP = 0.8V almost comparable performance to 32nm HKMG Improved BEOL process: Cu/ULK, MIM, Inductors 11/24/2013 Nuo Xu EE 290D, Fall 2013 S.-Y. Wu, VLSI-T (2009) 12
13 20nm Bulk Platform NMOS XTEM PMOS XTEM Double-Patterning enabled Pitch Scaling SiGe SiGe I OFF vs. I EFF plots Technology Flavors SRAM SNM High-κ + Metal Gate Last Strain: esige for PMOS, no stressors for NMOS Speed Improvement: 30% faster for LP, 15% faster for HP than 28nm node 11/24/2013 Nuo Xu EE 290D, Fall 2013 H. Shang, VLSI-T (2012) 13
14 28nm UTBB FDSOI Platform XTEM I OFF vs. I ON plots Pelgrom plots L g =40nm for SRAM Back Biasing 12nm-Si/25nm-BOX SOI wafer; Final t SOI =7nm HKMG First, T inv =1.5(1.65)nm Doped GP, causing a splitting of 2 V TH (RVT, LVT); Dynamic V TH by FBB/RBB? No HALO doping N(P)MOS: I ON =1070(610)uA/um; I OFF =16(30)nA/um DIBL=90-95mV; V DD 11/24/2013 Nuo Xu EE 290D, Fall 2013 N. Planes, VLSI-T (2012) 14
15 28nm UTBB FDSOI Platform (Cont d) 6T SRAM cell Static Noise Margin & V DD,min 0.120um 2 I leak vs. I read for SRAM cells SRAM V DDmin improves by 0.1V SRAM read speed largely improved: same leakage, 2x faster! Source: Wikipedia N. Planes, VLSI-T (2012) 11/24/
16 20nm UTBB FDSOI? 20nm FD process wrt 20nm bulk process Chemical analysis of 20nm FD-PFET NFET and PFET Current Enhancement 20nm FDSOI development goal: 30% performance boost over bulk reference This comes from: 8-12% parasite capacitance; 4-6% SS and 8-10% I EFF improvement. Biggest difference compared to ST s 28nm FD: Low V TH FDSOI-PFET uses 27%Ge-SiGe channel, (epi SiGe on top of SOI, then oxidize) a V TH lowering of 200mV can be achieved. BOX thickness reduces from 25nm to 20nm. NFET: in-situ P-doped S&D; No LDD, pocket, HALO, HDD implants used M. Haond, Int SOI Conf. (2012) 11/24/2013 Nuo Xu EE 290D, Fall
17 22nm FinFET Platforms Intel 22nm Tri-Gate IBM 22nm FinFET TSMC 22nm FinFET 8nm SiGe L g =30nm CPP 90nm Bulk Si substrate Fin aspect ratio: 2:1 HKMG Last L g =25nm CPP 100nm Gate Pit nm SOI substrate Fin aspect ratio: 2.3:1 HKMG First L g =25nm Bulk Si substrate Fin aspect ratio: <2:1 HKMG Last? C. Auth, VLSI (2012) V.S. Basker, VLSI (2010) C.C. Wu, IEDM (2010) 11/24/2013 Nuo Xu EE 290D, Fall
18 22nm FinFET Performance Intel 22nm Tri-Gate IBM 22nm FinFET TSMC 22nm FinFET VLSI 2012 VLSI 2010 IEDM 2009 OFF of 100nA/um PMOS VLSI 2011 IEDM 2010 N: 1.26mA/um P: 0.8V V DD N: 1.2mA/um P: 1V V N: 1.2mA/um 1V V P: 1.1mA/um DD 18
19 22nm Bulk FinFET: to Probe Further Technology Flavors NMOS PBTI Improvement Short-Channel Effect I/O Devices Misaligned-Contacts to avoid Gate/SD Shorting Almost idea electrostatics: N(P) FET DIBL=46(50) mv/v; SS=69(72) V DD Threshold voltage engineering by tuning L g + doping 193nm Immersion litho. to achieve 8nm Fin width, corner rounding (3.5nm radius) 5 th -gen strained-si tech: Si 0.5 Ge 0.5 S/D + Gate-Last for PFET; some technique for NFET Misalignment at CESL to form contacts; contact wrap around the fin 9-layer Cu interconnect; MIM introduced between M8 & M9 C. Auth, VLSI-T (2012) 11/24/2013 Nuo Xu EE 290D, Fall 2013 C.-H. Jan, IEDM (2012) 19
20 Improvement over 32nm Planar Platforms PMOS I EFF Improvement Delay vs. Power plots SRAM Power & Intrinsic Gain Improvement As compared to precedent planar platforms, most of the performance enhancement comes from electrostatics improvement! C.-H. Jan, IEDM (2012) 11/24/2013 Nuo Xu EE 290D, Fall 2013 K. Kuhn, IEDM (2012) 20
21 References 1. (Intel 90nm) K. Mistry et al., Delaying Forever: Uniaxial Strained Silicon Transistors in a 90nm CMOS Technology, Symposium on VLSI Technology Dig., pp.50-51, (Intel 65nm) S. Tyagi et al., An Advanced Low Power, High Performance, Strained Channel 65nm Technology, IEEE International Electron Devices Meeting Tech. Dig., pp , (Intel 45nm) C. Auth et al., 45nm High-k+Metal Gate Strain-Enhanced Transistors, Symposium on VLSI Technology Dig., pp , (Intel 32nm) P. Packan et al., High Performance 32nm Logic Technology Featuring 2 nd Generation High-k + Metal Gate Transistors, IEEE International Electron Devices Meeting Tech. Dig., pp , (UMC 28nm) C.W. Liang et al., A 28nm Poly/SiON CMOS Technology for Low Power SoC Applications, Symposium on VLSI Technology Dig., pp.38-39, (TSMC 28nm) S.-Y. Wu et al., A Highly Manufacturable 28nm CMOS Low Power Platform Technology with Fully Functional 64Mb SRAM Using Dual/Triple Gate Oxide Process, Symposium on VLSI Technology Digest, pp , (IBM 20nm Bulk) H. Shang et al., High Performance Bulk Planar 20nm CMOS Technology for Low Power Mobile Applications, Symposium on VLSI Technology Digest, pp , (ST 28nm FDSOI) N. Planes et al., 28nm FDSOI Technology Platform for High-Speed Low- Voltage Digital Applications, Symp. VLSI Tech. Dig., pp , (ST 20nm FDSOI) M. Haond et al., 20 nm FDSOI Process and Design Platforms for High Performance/Low Power Systems on Chip, IEEE International SOI Conference, (Intel 22nm Fin) C. Auth et al., A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors, Symposium on VLSI Technology Dig., pp , 2012.
22 References 11. C.-H. Jan et al., A 22nm SoC Platform Technology Featuring 3-D Tri-Gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications, IEEE International Electron Device Meeting Tech. Dig., pp.44-47, K. Kuhn et al., The Ultimate CMOS Device and Beyond, IEEE International Electron Device Meeting Tech. Dig., pp , (IBM 22nm Fin) V.S. Basker et al., A 0.063um 2 FinFET SRAM Cell Demonstration with Conventional Lithography using a Novel Integration Scheme with Aggressively Scaled Fin and Gate Pitch, Symposium on VLSI Technology Dig., pp.19-20, (TSMC 22nm Fin) C.C. Wu et al., High Performance 22/20nm FinFET CMOS Devices with Advanced High- /Metal Gate Scheme, IEEE International Electron Device Meeting Tech. Dig., pp , 2010.
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