SiGe:C BiCMOS Technologies for RF Automotive Application
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1 SiGe:C BiCMOS Technologies for RF Automotive Application Gerhard Fischer, Srdjan Glisic, Bernd Heinemann, Dieter Knoll, Wolfgang Winkler IHP Im Technologiepark Frankfurt (Oder) Germany
2 Outline IHP Frankfurt (Oder) Application: automotive radar sensors IHP technologies: Low-cost SiGe:C BiCMOS for 24 GHz front-end receiver High-performance SiGe:C BiCMOS for 77/79 GHz transmitter High temperature stability and reliability
3 IHP Frankfurt (Oder) Founded 1972 Institut für Halbleiterphysik of the East German Academy of Science 1991 Member of the Blaue Liste (later Leibniz Society) 1999: Innovations for High Performance Microelectronics 900 m² class 1 clean room, staff: ~ 200 co-workers 4 core competencies: Materials research, Si process technology, rf circuit design, wireless communication systems
4 IHP Technology Portfolio Platform 0.25 µm CMOS with 4 or 5 Al metal layers, 1 ff/µm² MIM capacitors (> 1 ff/µm² high-k MIM in development), different resistors SiGe:C hetero bipolar transistors (HBT) Technologies Technology SGB25VD SG25H1 SG25H2 SG25H3 Object Low-Cost BiCMOS w/ LV/MV/HV HBTs High Performance BiCMOS Complementary BiCMOS w/ npn + pnp HBTs Multi Purpose BiCMOS w/ LV/MV/HV HBTs 0.13 µm BiCMOS technology with f T /f max > 200 GHz is in development technologies are offered in multi-wafer project (MPW) shuttle service
5 Application: Automotive Radar Sensors Short range radar (SRR) Frequency: 24 GHz or 79 GHz Bandwidth: up to 4 GHz Distance: 0 30 m Parking aid Blind spot detection Long range radar (LRR) for Autonomous Cruise Control (ACC) Precrash Backup parking aid ACC for Stop & Go Rear crash collision warning Frequency: 76.5 GHz Bandwidth: 200 MHz Distance: > 5m Collision warning Collision mitigation Blind spot detection Lane change assistent Radar technology allows control of car surroundings enables new applications for passive and active safety total system needs up to 8 SRR and 1 ACC sensors
6 Application: Radar Front-end Transceiver Example: 77/79 GHz with high-performance BiCMOS Example: 24 GHz with low-cost BiCMOS No technology modification for automotive application!
7 Example 24 GHz LNA Low-Cost SiGe:C BiCMOS
8 Low-Cost Technology SGB25VD Platform 0.25 µm CMOS with 4 metal layers (3 µm thick 5 th Al layer optional) 3 SiGe:C hetero bipolar transistors (HBT) Devices (selection) Device ft/fmax/bvceo [GHz/GHz/V] Low-voltage HBT f T /f max = 75/90 GHz, BV CEO = 2.4V, BV CBO = 7.7V Medium-voltage HBT High-voltage HBT NMOS Varactor MIM Capacity Resistors Predefined Inductors f T /f max = 45/90 GHz, BV CEO = 4V, BV CBO = 17V f T /f max = 25/70 GHz, BV CEO = 7V, BV CBO > 20V C = ff/µm², Q = 25 5GHz C = 1 ff/µm², BV > 30 V R S = 310 Ohm (p + -poly) R S = 2000 Ohm (low doped poly) L = nh
![[GHz/GHz/V] Low-voltage HBT f T /f max = 75/90 GHz, BV CEO = 2.4V, BV CBO = 7.](/docs-images/44/21018426/images/page_8.jpg "7V Medium-voltage HBT High-voltage HBT NMOS Varactor MIM Capacity Resistors Predefined Inductors f T /f max = 45/90 GHz, BV CEO = 4V, BV CBO = 17V f")
9 Medium-Voltage HBT: X-section Features of SGB25VD bipolar module Only shallow trench isolation (STI) SiO 2 L-Spacer Si/SiGe:C/Si Epi Layer Poly-Si Gate Layer CoSi 3 HBT types by collector implant variation HBT integration after gate stack deposition 1-mask HBT module Poly-Si CMP for emitter external base isolation Emitter area: 0.42x0.84 µm² SIC Coll. Well Deep P Implant (SC) n-well S/D SIC: Selectively implanted collector S/D: Source/drain implant
10 Medium-Voltage HBT: RF Characteristics f T, f max [ GHz ] V CE = 2.5V 4x(0.42x0.84) µm² 16x(0.42x0.84) µm² IC [ ma ] HBT emitter area variants in design kit: A E = N xy x 0.42 µm x L Emitter N xy = 1 16 L Emitter = µm
![1 1 10 IC [ ma ] HBT emitter area variants in design kit: A E = N xy](/docs-images/44/21018426/images/page_10.jpg "x 0.42 µm x L Emitter N xy = 1 16 L Emitter = 0.84 3.36 µm")
11 Medium-Voltage HBT: RF Noise Fmin (db) Associated Gain [ db ] V CE = 3V Emitter area = 16x0.42x0.84 µm² Minimum noise 2 GHz ~ GHz ~ 2.1 db Collector Current (ma) 0
12 24GHz Receiver Front End: LNA Noise Figure [ db ] F min F 50Ω Frequency [ GHz ] Associated Gain [ db ] V CC = 5V I CC = GHz: F min ~ F 50Ω ~ 4.5 db G a = 16 db
![22 20 18 16 14 12 10 8 6 4 Associated Gain [ db ] V CC =](/docs-images/44/21018426/images/page_12.jpg "5V I CC = 6.3 ma @ 24 GHz: F min ~ F 50Ω ~ 4.")
13 Example 77/79 GHz VCO High-Performance SiGe:C BiCMOS
14 High-Performance Technology SG25H1 Platform 0.25 µm CMOS with 4 metal layers (3 µm thick 5 th Al layer optional) 2 SiGe:C hetero bipolar transistors (HBT) Devices (selection) Device HBT npn200 HBT npn201 ft/fmax/bvceo [GHz/GHz/V] f T /f max = 190/190 GHz, BV CEO = 1.9V, BV CBO = 4.5V f T /f max = 180/220 GHz, BV CEO = 1.9V, BV CBO = 4.5V
15 High-Performance HBT: X-section Features of SG25H1 bipolar module CoSi emitter contact Only shallow trench isolation (STI) HBT integration after gate module Uniform active area 30nm boron doped Si 0.8 Ge 0.2 C n doped poly crystalline Si emitter CoSi base contact poly crystalline SiGe:C extrinsic base CoSi collector contact Combination of selective and differential Si/SiGe:C/Si epitaxy Drawn emitter area: 0.21x0.84 µm² (npn200) 0.18x0.84 µm² (npn201) SiO 2 Trench STI S/D n + SiO 2 SIC n + n doped Si collector 2 µm bipolar window p - Si substrate SiO 2 SIC: Selectively implanted collector S/D: Source/drain implant
16 High-Performance HBT: DC Gummel Characteristic I B, I C [A] V CB = 0V HBT npn npn V BE [V] Beta
17 High Performance HBT: DC Output Characteristic npn200 I C / Emitter [ ma ] maximum f T 0.0 I E = 0 (-0.5mA) -4mA V CB [ V ] Breakdown voltage with soft breakdown criterion: IC = 100 na BVCBo = 4.5V IC = 10 ua BVCBo = 5.5V
18 High Performance HBT: Transit Frequency f T f T [ GHz ] GHz V CE = 1.5V 1 10 I C [ ma ] HBT npn200 npn201 f max [ GHz ] GHz V CE = 1.5V HBT npn200 npn I C [ ma ]
![5V 1 10 I C [ ma ] HBT npn200 npn201 f max [ GHz ] 220 200 180 160 140 120 100 220 80 200 180](/docs-images/44/21018426/images/page_18.jpg "60 160 40 140 20 120 0 100 80 60 40 5V HBT npn200 npn201 1 10 220 200 180 160 140 120 100 80")
19 High Performance HBT: Gate Delay Time τ RO Gate Delay Time (ps) npn201 A E = 0.18x0.84µm 2 npn200 A E = 0.21x0.84µm 2 T= 300K ΔV= 300mV V EE = -2.5V Standard Extr. Base Elevated Extr. Base Optimization τ RO Elevated extrinsic base (Rücker et al., IEDM 2003) Collector pedestal 3.2 ps (Heinemann et al., IEDM 2004) Current per Gate (ma) Gate Delay Time [ ps ] Year Hitachi IBM Infineon IHP
20 Application: Radar Project KOKON 2004 formation of BMBF funded project KOKON Goals: Investigation of systems for automotive radar sensors at GHz Definition of SiGe technology for - long range radar (LRR) system at GHz - ultra-wide band short range radar (UWB-SRR) at GHz Development of circuits for cost-efficient LRR and SRR sensors Prototyping a full electronic cocoon ( KOKON ) around the car IHP is subcontractor of Infineon and Atmel in BMBF project KOKON Homepage:
21 Application: Radar Core Circuit Core circuit for radar signal generation: Voltage controlled oscillator (VCO) + power amplifier (PA) Realization in KOKON: SiGe:C bipolar process (Infineon) with BC varactors SiGe:C BiCMOS process (IHP) with NMOS accumulation varactors Goal: Analysis of impact of technological platform on circuit performance 0.8 mm 0.5 mm IHP 77 GHz VCO + PA + metal 5 transmission line inductors differential design 1-stage output buffer 2-stage output buffer (tbd)
22 Application: Radar Specifications VCO + PA Parameter Center frequency Tuning sensitivity Tuning range Output power Phase noise Amplitude noise Target 77 GHz ~ 2 GHz/V 10 GHz +16 dbm (40 mw) 2-stage output buffer < kHz Offset < khz Offset Other boundary conditions: Environmental temperature Supply voltage - 40 C C + 5.5V, VCC
23 Application: Radar Properties VCO Oscillator Frequency [ GHz ] Standard deviation over wafer (10 chips): +/ GHZ tuning range ~ 8 GHz Standard deviation over wafer (10 chips): +/ dbm Output Power [ dbm ] Technology: SG25H1 (w/ npn200) Output power (singleended measurement): /- 0.4 dbm Control Voltage [ V ]
24 Application: Radar Properties VCO + 1-stage Buffer Oscillator Frequency [ GHz ] tuning range ~ 7 GHz with npn201 with npn Control Voltage [ V ] Output Power [ dbm ] Technology: SG25H1 (w/ npn201 and npn200) f max difference: 20 GHz Output Power difference: ~ 0.8 dbm Full output power 1-stage buffer ~ 14 dbm 2-stage buffer ~ 18 dbm (expected)
25 Application: Radar Properties VCO + 1-stage Buffer Technology: SG25H1 (w/ npn201) P out [ db ] I CC [ ma ] HBT: 8x0.18x0.84 µm 2 Maximum size in design kit P out > 16 V CC = 6.5V Supply Voltage V CC [ V ] Power V CC = 5.5 V P diss = 900 mw
26 High Temperature Stability and Reliability
27 Application: KOKON Sensitivity Analysis Oscillator Frequency f osc [ GHz ] base resistance collector base capacity forward transit time ~ 1/f T oxide thickness (inductor) BC capacity 77 (CBC) Forward transit time (TF) 76-60% -40% -20% 0% 20% 40% 60% Relative Change Changing inductivity or SPICE parameters in simulation leads to following sensitivities: Parameter Oxide thickness (Inductor) Base resistance (RB) MHz / %shift
28 Application: KOKON Sensitivity Analysis Parameter Simulation MHz / %shift Measurement %shift / 100K Shift of f osc [MHz/100K] Oxide thickness % (Inductor) Base resistance % (RB) BC capacity (CBC) % Forward transit time (TF) % Sum ~ Estimation gives a reduction of oscillator frequency of at least 1.3 GHz/100K
29 Temperature Stability VCO Oscillator Frequency [ GHz ] tuning range temperature shift Temperature [ C ] Chip A Chip B Chip C Technology: SG25H1 (npn200) Temperature shift Δf = f Osz,RT f Osz,125 C ~ 1.8 GHz
30 Oscillator Operation Transistor Reliability I C / Emitter [ ma ] npn200 maximum f T area of oscillator operations 0.0 I E = 0 (-0.5mA) -4mA V CB [ V ] Technology: SG25H1 (npn200) Stress tests in work T = 125 C, t > 100h 1) high-current : VCB = 0V, IE = max. f T 2) mixed-mode : VCB = 1.5V, IE = 2x max. f T 3) high-voltage : VCB = 3V, IE = 0.25x max. f T
31 High Current Stress I Base Current, Collector Current [ A ] t = 0 t = 67h V BE [ V ] Technology: IHP SG25H1 (npn200) Beta Stress conditions T = 125 C, I E = - 20mA, V CB = 0V 50 Stress current density: 37mA/µm² Stress time: 67h Beta degradation V BE = 0.7V: V BE = 0.8V: V BE = 0.9V: 4%
32 High Current Stress II 200 t = 0 t = 67h 200 Technology: IHP SG25H1 (npn200) f T [ GHz ] f max [ GHz ] Stress conditions T = 125 C, I 0 0 E = - 20mA, V CB = 0V Stress current density: 37 ma/µm² V BE [ V ] Stress time: 67h No RF performance degradation
33 Mixed-Mode Stress I Base Current, Collector Current [ A ] t = 0 t = 160h V BE [ V ] Beta Technology: IHP SG25H1 (npn200) Stress conditions 50 T = 125 C, I E = - 10mA, V CB = 1.5V 0 Stress time: 160h Very low Beta degradation!
34 Mixed-Mode-Stress II t = 0 t = 160h Technology: IHP SG25H1 (npn200) f T [ GHz ] f max [ GHz ] V BE [ V ] Stress conditions T = 125 C, I E = - 10mA, V CB = 1.5V Stress time: 160h No RF performance degradation!
35 High-Voltage Stress I Current [ A ] T = 125 C, t = 97h T = 27 C, t = 12h V BE [ V ] Beta / Beta (Maximum) Stress conditions J E = - 5.2mA/µm², V CB = 3V Degradation by trap creation in EB spacer region: e - e - h + V C > 3V
36 High Voltage Stress II Relative Beta V BE = 0.7V 10% 1% AE = 0.21x0.84 µm² AE = 0.21x1.26 µm² AE = 0.21x1.68 µm² AE = 0.21x3.36 µm² 25% 20% 15% 0.1% % Stress Time [ s ] Beta Degradation (t=12h) Stress conditions T = 27 C, J E = ma/µm², V CB = 3V Stress time: 12h Emitter Perimeter/Area [µm -1 ]
37 High Voltage Stress III t = 0 t = 63h t = 97h Technology: IHP SG25H1 (npn200) f T [ GHz ] f max [ GHz ] V BE [ V ] Stress conditions T = 125 C, I E = - 1.3mA, V CB = 3V Stress time: 97h No RF performance degradation
38 Resume IHP has portfolio of rf SiGe:C BiCMOS technologies Low-cost technology High-performance technology 0.13 µm technology in development Automotive radar application examples 24 GHz LNA 77/79 GHz VCO Investigation of high temperature sensitivity and reliability necessity for automotive application
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