Training Course of SOC Encounter
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1 Training Course of SOC Encounter REF: CIC Training Manual Cell-Based IC Physical Design and Verification with SOC Encounter, July, 2006 CIC Training Manual Mixed-Signal IC Design Concepts, July, 2007 Speaker: T. W. Tseng
2 Outline Basic Concept of the Placement & Routing Auto Place and Route Using SOC Encounter Hard Block Abstraction Using Abstract Generator LAB
3 Basic Concept of the Placement & Routing
4 Cell-Based Design Flow Spec. System Level MATLAB/ C/ C++/ System C/ ADS/ Covergen (MaxSim) Memory Generator RTL Level Verilog/ VHDL NC-Verilog/ ModelSim Debussy (Verdi)/ VCS Syntest Logic Synthesis Design for Test Gate Level Layout Level Post-Layout Verification Conformal/ Formality Design/ Power Compiler DFT Compiler/ TetraMAX NC-Verilog/ ModelSim Debussy (Verdi)/ VCS SOC Encounter/ Astro GDS II DRC/ LVS (Calibre) mpiler/ Fusion hysical Com gma Blast Ph Mag PVS: Calibre xrc/ NanoSim (Time/ Power Mill) Tape Out
5 SOC Encounter P&R Flow Netlist (Verilog) Timing i Constraints t (sdc) IO Constraints (ioc) IO, P/G Placement Clock Tree Synthesis Specify Floorplan Timing Analysis Timing Analysis Post-CTS Optimization Pre-CTS Optimization Power Route Power Planning SI Driven Route Power Analysis Timing/SI Analysis GDS Netlist Spef DEF
6 IO, P/G Placement Determine the positions of the PADs Corner1 I1 VDD O1 Corner2 Functional IO PAD Power/Ground PAD Corner PAD I2 O2 Just for the connection of PAD power rings IOVDD IOVSS I3 O3 Corner3 I4 VSS O4 Corner4
7 Specify Floorplan Determine the aspect ratio of the Core and the gap between the PAD and Core The Core Utilization is determined in this step The final CHIP area is almost determined in this step Hight Width
8 Floorplan Determine the related positions of Hard Corner1 I1 VDD O1 Corner2 Blocks The performance is highly affected I2 O2 M2 IOVDD IOVSS I3 M1 M3 O3 Corner3 I4 VSS O4 Corner4
9 Amoeba Placement Observe the result of cells and Hard Blocks placement
10 Power Planning Plan the power ring & power stripe IR-drop consideration
11 Clock Tree Synthesis CLK CLK
12 Power Analysis IR-drop & electron migration
13 Power Route Connect the power pins of standard cells to the global power lines
14 Add IO Filler Fill the gap between PADs Connect the PAD power rings
15 Routing Construct the final interconnections
16 Prepare Data Library Physical Library (LEF) Information of technology, standard cells, Hard Blocks, and APR Timing Library (LIB) Timing information of the standard cells and Hard Blocks Capacitance Table For more accurate RC analysis Celtic Library Not Necessary! For crosstalk analysis FireIce/Voltage Storm Library For RC extraction and power analysis User Data Gate-Level Netlist (Verilog) SDC Constraint (*.sdc) IO Constraint (*.ioc)
17 LEF Format Process Technology Layers Design Rule Parasitic POLY Contact Metal 1 Via1 Metal l2 Net Width Net Spacing Area Enclosure Wide Metal Slot Antenna Current Density Resistance Capacitance
18 LEF Format Process Technology: Layer Define Layer Metal1 TYPE ROUTING; WIDTH 0.28; MAXWIDTH 8; AREA 0.202; SPACING 0.28; SPACING 0.6 RANGE ; PITCH 0.66; DIRECTION VERTICAL; THICKNESS 0.26; ANTENNACUMDIFFAREARATIO 5496; RESISTANCE RPERSQ 1.0e-01; CAPACITANCE CPERSQDIST 1.11e-04; EDGECAPACITANCE 9.1e 1e-05; END Metal1 Wide Metal Spacing Width Spacing Wide Metal
19 LEF Format APR Technology Unit Site Routing Pitch Default Direction Via Rule
20 LEF Format APR Technology: Site The placement site gives the placement grid of a family of macros a row a site a standard cell
21 Row Based PR VDD VSS VDD VSS
22 LEF Format APR Technology: Routing Pitch, Default Direction Via Metal1 Routing Pitch Metal2 Routing Pitch Horizontal Routing Metal1 Metal3 Metal5 Vertical Routing Metal2 Metal4 Metal6
23 LEF Format APR Technology: Via Generation To connect the wide metal, a via array is generated to reduce the via resistance Formulas for generating via arrays are defined Layer Metal1 Direction HORIZONTAL OVERHANG 0.2 Layer Metal2 Direction VERTICAL OVERHANG 0.2 Layer Via1 RECT SPACING 0.56 BY 0.56 Default Via Generated Via
24 LEF Format APR Technology: Same Net Spacing SPACING SAMENET Metal1 Metal1 0.23; SAMENET Metal2 Metal STACK; SAMENET Metal3 Metal3 0.28; SAMENET VIA12 VIA ; SAMENET VIA23 VIA ; SAMENET VIA12 VIA STACK; END SPACING Metal1 VIA12 and VIA23 Metal3 VIA12 and VIA23 allow stack Metal Same Net Spacing Rule
25 LEF Format APR Technology: Physical Macros Define physical data for Standard cells I/O pads Memories Other hard macros Describe abstract shape Size Class Pins Obstructions
26 LEF Format APR Technology: Physical Macros (Cont ) Y VDD B VSS A Metal Barrier MACRO ADD1 CLASS CORE; FOREIGN ADD ; ORIGEN ; LEQ ADD; SIZE 19.8 BY 6.4; SYMMETRY x y; SITE coresite; PIN A DIRECTION INPUT; PORT LAYER Metal1; RECT ;. END END A. END ADD1
27 LIB Format Operating condition Slow, fast, typical Pin type Input/output/inout Function Data/clock Capacitance Path delay Timing constraint Setup, hold, mpwh, mpwl, recovery
28 Gate-Level Netlist If designing a chip, IO PADs, power PADs, and Corner PADs should be added before the netlist is imported Make sure that there is no assign statement and no *cell* cell name in the netlist
29 SDC Constraint Clock constraints Input delay/ Input drive Output delay/ Output load False path Multi-cycle path
30 IO Constraint Version: 1 Pad: CORNER0 NW PCORNERDGZ Pad: PAD_CLK N Pad: PAD_HALT N Pad: CORNER1 NE PCORNERDGZ CORNER0 PAD_CLK N PAD_HALT CORNER1 Pad: PAD_X1 W Pad: PAD_ X2 W PAD_X2 W E PAD_VSS1 Pad: CORNER2 SW PCORNERDGZ Pad: PAD_IOVDD1 S PVDD2DGZ Pad: PAD_IOVSS1 S PVSS2DGZ PAD_X1 S PAD_VDD1 Pad: CORNER3 SE PCORNERDGZ Pad: PAD_VDD1 E PVDD1DGZ Pad: PAD_VSS1 E PVSS1DGZ CORNER2 CORNER3 (*.ioc File) PAD_IO OVDD1 PAD_IO OVSS1
31 How To Decide the NO. of Power/Ground PADs The following factors are considered: SSO: Simultaneously Switch Outputs SSN: The noise produced by SSO buffers DI: Maximum NO. of copies for one specific kind of IO PAD switching from high to low simultaneously without making ground voltage level higher than 0.8 volt for one ground PAD DF: Driving Factor, DF = 1/DI SDF: Sum of Driving Factor Suggestion in SSO case: Required NO. of ground PADs = SDF Required NO. of power PADs = SDF/1.1
32 SDF Example IO Type 2mA 4mA 8mA 12mA 16mA 24mA DF Value If a design has 20 PDB02DGZ (2mA) and 10 PDD16DGZ (16mA). Then, SDF = 20 x x 0.3 = 3.4 In SSO case, NO. of VSS PAD = NO. of VDD PAD = 3.4/1.1 =
33 Tips to Reduce the Power/Ground Bounce Don t use stronger output buffers than what is necessary Use slew-rate controlled outputs Place power pad near the middle of the output buffer Place noise sensitive I/O pads away from SSO I/Os Place VDD and VSS pads next to clock input buffer
34 Auto Place and Route Using SOC Encounter
35 CHIP-Level Netlist If your gate-level netlist is generated by CORE-level synthesis, you should all the CHIP-level module in it Ex:
36 CHIP-Level Netlist (Cont ) If your design has a Hard Block, you should add an empty module for it the module name should be the same as the cell name of the Hard Block Ex: (Module Declaration) (Module Reference) Connected Wire Name in Verilog Pin Name in SPICE
37 CHIP-Level Timing Constraint Ex: CHIP-Level Clock Declaration Set False Path to Your Test Pins Set Parameters to the PAD IO
38 Getting Started linux %> ssh -l user name cae18.ee.ncu.edu.tw unix %> source /APP/cad/cadence/SOC/CIC/soc.csh unix %> encounter (Do not run in the background mode!!) Connect to Unix
39 Import Design <Design> Design/Design Import Verilog Files: your gate-level netlist Tot Cell LEF Files (*.lef): including all the LEF files of cell libraries i & hard blocks LIB Files (*.lib): Max Timing Libraries Min Timing Libraries Common Model Libraries IO Assignment File: *.ioc
40 Import Design <Timing> Capacitance Table File Timing Constraint File: *.sdc
41 Import Design <Power> <IPO/CTS> Power Nets Ground Nets Footprints for In-Place Layout Optimization (IPO) and Clock Tree Synthesis (CTS)
42 Import Design <Misc.> QX Tech File QX Library Directory (Floorplan View)
43 Global Net Connection Floorplan/Global Net Connections
44 Specify Floorplan Floorplan/Specify Floorplan CORE Area
45 Specify Scan Chain encounter %> specifyscanchain ScanChainName - start {ftname instpinname} - start {ftname instpinname} encounter %> scantrace Ex: (result)
46 Hard Block Placement Move/Resize/Reshape floorplan object
47 Edit Block Halo Floorplan/Edit Block Halo Reserve space without standard cell placement
48 Standard Cell Placement Place/Place
49 Power Planning Add Rings Floorplan/Custom Power Planning/Add Rings
50 Power Planning Add Block Rings Floorplan/Custom Power Planning/Add Rings
51 Example for Power Rings
52 PAD Pins Route/SRoute
53 Power Planning Add Stripes Floorplan/Custom Power Planning/Add Stripes
54 Power Planning Add Stripes (Cont ) Ex:
55 Fix Un-Connected Stripes Route/SRoute
56 Flow Clock Tree Synthesize Create Clock Tree Spec clock spec Specify Clock Tree Modify Synthesis Clock Tree Display Clock Tree Netlist Synthesis report Clock nets Routing guide
57 Create/Specify/Synthesis Clock Tree Spec. Clock/Create Clock Tree Spec Clock/Specify Clock Tree Clock/Synthesis Clock Tree (Clock Spec.)
58 Example for CTS Report
59 Display Clock Tree Clock/Display/Display Clock Tree Ex:
60 Power Analysis Power/Edit Pad Location Power/Power Analysis/Statistical Ex: Power/Edit Net Toggle Probability (Power Analysis Report)
61 Example for Rail Analysis of IR-Drop & EM (IR-Drop) (EM)
62 Power Route Route/SRoute
63 IO Filler encounter %> source addiofiller.cmd
64 Nano Route Route/NanoRoute
65 Example for Nano Route
66 Cell Filler Place/Filler/Add Filler Ex:
67 Save Design Design/Save/Netlist *.v Timing/Calculate Delay *.sdf Design/Save/DEF *.def SELECT Save Scan
68 Bounding PAD unix %> chmod 755 addbonding.pl unix %> /usr/bin/perl addbonding.pl CHIP.def encounter %> source bondpads.cmd Ex:
69 Save GDSII Design/Save/GDS *.gds
70 LAB
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