PD-97803A FRED Features Reduced RFI and EMI Reduced RFI and EMI Extensive Characterization of Recovery Parameters Hermetic Surface Mount ESD Rating: Class 3B per MIL-STD-750, Method 20 Ultrafast, Soft Recovery Diode V R = 200V I F(AV) = 60A t rr = 50ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behaviorfor different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter Max. Units V R Cathode to Anode Voltage 200 V I F(AV) Continuous Forward Current, T C = 55 C 60 I FSM Single Pulse Forward Current, T C 500 A P D @ T C Maximum Power Dissipation 25 W, T STG Operating Junction and Storage Temperature Range -55 to +50 C Notes: D.C. = 50% rect. wave /2 sine wave, 60 Hz, P.W. = 8.33 ms CASE STYLE CATHODE ANODE SupIR SMD TM -2 www.irf.com 0/5/3
Electrical Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V BR Cathode Anode Breakdown Voltage 200 V I R = µa V F Forward Voltage.5, =-55 C See Fig. 0.97,.08 V,.30 I F =20A, See Fig. 2 0.8, =25 C I R Reverse Leakage Current 50 µa V R = V R Rated See Fig. 2.0 ma V R = V R Rated, = 25 C C unction Capacitance, See Fig. 3 90 pf V R = 200V L S Series Inductance 5.9 nh Measured from center of cathode pad to center of anode pad Dynamic Recovery Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions t rr Reverse Recovery Time 45 50 See Fig. ns t rr2 7 = 25 C 5 I RRM Peak Recovery Current 5.3 See Fig. A I RRM2.3 = 25 C 6 V R = 60V Q rr Reverse Recovery Charge 20 See Fig. nc Q rr2 366 = 25 C 7 di f /dt = 200A/µs di (rec)m /dt Peak Rate of Fall of Recovery Current 590 See Fig. A/µs di (rec)m /dt2 During t b 290 = 25 C 8 Thermal-Mechanical Characteristics Parameter Typ. Max. Units R thjc Junction-to-Case.0 C/W Wt Weight 3.0 g 2 www.irf.com
Instantaneous Forward Current - I F (A) Junction Capacitance - C T (pf) Reverse Current - I R ( ua ) 0 25 C C 75 C 0. 25 C 0.0 Tj = 25 C 0.00 0 40 80 20 60 200 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 00 Tj 0 Tj = -55 C 0.0 0.2 0.4 0.6 0.8.0.2.4.6 Forward Voltage Drop - V F (V) 0 40 80 20 60 200 Reverse Voltage - V R (V) Fig. - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage D = 0.50 0. 0.02 0.20 0. 0.05 SINGLE PULSE 0.0 ( THERMAL RESPONSE ) P DM t t 2 Thermal Response ( Z thjc ) 0.0 0.00 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc www.irf.com 3
Q rr - ( nc ) / dt - ( A / µs ) t rr - ( ns ) I RRM - ( A ) V R = 60V 80 = 25 C 60 40 20 0 Fig. 5 - Typical Reverse Recovery Vs. di f /dt, 0 V R = 60V = 25 C Fig. 6 - Typical Recovery Current Vs. di f /dt, 00 00 0 0 V R = 60V = 25 C di ( rec )M V R = 60V = 25 C 0 0 Fig. 7 - Typical Stored Charge Vs. di f /dt Fig. 8 - Typical di (rec)m /dt Vs. di f /dt 4 www.irf.com
3 REVERSE RECOVERY CIRCUIT 0 I F t a trr t b V R = 200V 0.0 Ω 2 I RRM Q rr 4 0.5 I RRM di(rec)m/dt 5 L = 70µH 0.75 I RRM D.U.T. di /dt f dif/dt ADJUST G D S IRFP250. di f/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr = 2 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. - Reverse Recovery Waveform and Definitions Case Outline and Dimensions SupIR SMD TM -2 PAD ASSIGNMENTS = CATHODE 2 = N / C 3 = ANODE IR WORLD HEADQUARTERS: N. Sepulveda Blvd., California 90245, USA Tel: (3) 252-75 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 0453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 0/203 www.irf.com 5