TSM020N03PQ56 30V N-Channel MOSFET
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1 PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q g 82 nc Features Low On-Resistance Low Input Capacitance Low Gate Charge Ordering Information Part No. Package Packing TSM020N03PQ56 RLG PDFN56 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (T C =25 o C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (Note 3) T C =25 C I D 130 T A =25 C 38 Drain Current-Pulsed (Note 1) I DM 500 A Single Pulse Avalanche Energy, L=0.1mH E AS 151 mj Maximum Power Dissipation (Note 2) T C =25 C 83 P D T A =25 C 3.6 Storage Temperature Range T STG -55 to +150 C Operating Junction Temperature Range T J -55 to +150 C Thermal Performance Parameter Symbol Limit Unit A W Thermal Resistance - Junction to Case R ӨJC 1.5 Thermal Resistance - Junction to Ambient R ӨJA 35 o C/W o C/W 1/6 Version: A14
2 Electrical Specifications (T J =25 o C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA BV DSS V Drain-Source On-State Resistance V GS = 10V, I D = 30A R DS(ON) V GS = 4.5V, I D = 15A Gate Threshold Voltage V DS = V GS, I D = 250µA V GS(TH) V Zero Gate Voltage Drain Current V DS = 24V, V GS = 0V I DSS µa Gate Body Leakage V GS = ±20V, V DS = 0V I GSS ±100 na Dynamic Total Gate Charge Q g V DD = 15V, I D = 30A, Gate-Source Charge Q gs V GS = 10V Gate-Drain Charge Q gd Input Capacitance C iss V DS = 15V, V GS = 0V, Output Capacitance C oss f = 1.0MHz Reverse Transfer Capacitance C rss Switching Turn-On Delay Time t d(on) Turn-On Rise Time V GS = 10V, V DS = 15V, t r Turn-Off Delay Time R G = 3Ω, I D = 30A t d(off) Turn-Off Fall Time t f Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage V GS =0V, I S =30A V SD V Reverse Recovery Time t fr ns I S = 30A, di/dt = 100A/µs Reverse Recovery Charge Q rr nc Notes: 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%. 2. R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air. 3. The maximum current rating is limited by package. mω nc pf ns 2/6 Version: A14
3 Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage I DS=250µA Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: A14
4 Electrical Characteristics Curves Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: A14
5 PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A14
6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A14
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PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500
Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT
BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel
LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable
Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
A M A A December 995 SEMICONDUCTOR RFG7N6, RFP7N6, RFS7N6, RFS7N6SM 7A, 6V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 7A, 6V r DS(on) =.4Ω Temperature Compensated PSPICE Model
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
QFET TM FQP50N06. Features. TO-220 FQP Series
60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
SMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits
Features. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -4V/-25, R DS(ON) = 4mΩ (typ.) @ V GS = -V R DS(ON) = 55mΩ (typ.) @ V GS = -5V Super High Dense Cell Design G D S Reliable and Rugged Lead Free
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V
Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
IRF640, RF1S640, RF1S640SM
IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,
Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30
Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive
IRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF5 Data Sheet January 22 5.6A, V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
