STP80NF55-08 STB80NF55-08 STB80NF N-CHANNEL 55V Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

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1 STP80NF55-08 STB80NF55-08 STB80NF N-CHANNEL 55V Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL R DS (on) = Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK TO TO I2PAK TO APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 55 V V DGR Drain-gate Voltage (R GS = 20 kω) 55 V V GS Gate- source Voltage ± 20 V I D ( ) Drain Current (continuos) at T C = 25 C 80 A I D Drain Current (continuos) at T C = 100 C 57 A I DM ( ) Drain Current (pulsed) 320 A P tot Total Dissipation at T C = 25 C 300 W Derating Factor 2 W/ C E AS (1) Single Pulse Avalanche Energy 870 mj T stg Storage Temperature T j Max. Operating Junction Temperature -55 to 175 C ( ) Current limited by package ( ) Pulse width limited by safe operating area. (1) Starting T j = 25 oc, I D = 40A, V DD = 30V March /11

2 THERMAL DATA Rthj-case Rthj-amb T l Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ C/W C/W C ELECTRICAL CHARACTERISTICS (T case = 25 C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D = 250 µa V GS = 0 55 V I DSS Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating V DS = Max Rating T C = 125 C 1 10 µa µa I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 20V ±100 na ON (*) V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µa V R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 40 A Ω DYNAMIC g fs (*) Forward Transconductance V DS = 15 V I D = 18 A 40 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, V GS = pf pf pf 2/11

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Delay Time Rise Time V DD = 30 V I D = 40 A R G = 4.7 Ω V GS = 10 V (Resistive Load, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 44V I D = 80 A V GS = 10V nc nc nc SWITCHING OFF t d(off) t f Turn-off Delay Time Fall Time V DD = 30 V I D = 40 A R G = 4.7Ω, V GS = 10 V (Resistive Load, Figure 3) ns ns SOURCE DRAIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) A A V SD (*) Forward On Voltage I SD = 80 A V GS = V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A di/dt = 100A/µs V DD = 25 V T j = 150 C (see test circuit, Figure 5) ns nc A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( )Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/11

4 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/11

5 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature... 5/11

6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11

7 D2PAK MECHANICAL DATA DIM. mm. inch. MIN. TYP. MAX. MIN. TYP. TYP. A A A B B C C D D E E G L L L M R V /11

8 TO-262 (I 2 PAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A B B C C D e E L L L E A C2 B2 B e A1 C L1 L2 D L P011P5/E 8/11

9 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA A E C D D1 L2 F1 G1 G H2 Dia. F L5 L7 L9 F2 L6 L4 P011C 9/11

10 D 2 PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix T4 )* REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W BASE QTY BULK QTY * on sales type 10/11

11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 11/11