HEXFRED Ultrafast Soft Recovery Diode, 25 A

Transcription

1 VS-HF5PB6PbF, VS-HF5PB6-N3 HEXFRED Ultrafast Soft Recovery Diode, 5 FETURES Ultrafast and ultrasoft recovery TO-47 modified athode to base PRODUT SUMMRY Package TO-47 modified ( pins) I F(V) 5 V R 6 V V F at I F.3 V t rr (yp. 3 ns T J max. 5 Diode variation Single die 4 3 athode node 3 Very low I RRM and Q rr Designed and qualified according to JEDE -JESD47 Material categorization: for definitions of compliance please see BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count vailable DESRIPTION VS-HF5PB6... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 5 continuous current, the VS-HF5PB6... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF5PB6... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS athode to anode voltage V R 6 V Maximum continuous forward current I F T = 5 Single pulse forward current I FSM 5 Maximum repetitive forward current I FRM T = 5 5 Maximum power dissipation P D T = 6 W Operating junction and storage temperature range T J, T Stg -55 to +5 Revision: 4-Jul-5 Document Number: 9464

2 VS-HF5PB6PbF, VS-HF5PB6-N3 ELETRIL SPEIFITIONS ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS athode to anode breakdown voltage V BR I R = μ I F = 5 See fig I F = V I F = 5, Maximum reverse V R = V R rated -.5 I RM See fig. μ leakage current, V R =.8 x V R rated - 6 Junction capacitance T See fig pf Series inductance L S Measured lead to lead 5 mm from package body - - nh DYNMI REOVERY HRTERISTIS ( unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5, Peak recovery current See fig. 6, Reverse recovery charge See fig. 7, Peak rate of fall of recovery current during t b See fig. 8, t rr I F =., di F /dt = /μs, V R = 3 V t rr t rr I RRM I RRM I F = Q rr di F /dt = /μs Q rr - 4 di (rec)m /dt di (rec)m /dt ns n /μs THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (.6 mm) for s Thermal resistance, junction to case R thj Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thj Typical socket mount R ths Mounting surface, flat, smooth and greased K/W g -. - oz. Marking device ase style TO-47 modified (JEDE) HF5PB6 6. (5.) - () kgf cm (lbf in) Revision: 4-Jul-5 Document Number: 9464

3 VS-HF5PB6PbF, VS-HF5PB6-N3 I F - Instantaneous Forward urrent () T J = I R - Reverse urrent (µ). T J = V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent Fig. - Typical Reverse urrent vs. Reverse Voltage T - Junction apacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Response. D =.5 D =. D =. D =.5 D =. D =. Single pulse (thermal response) t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thj + T t t Revision: 4-Jul-5 3 Document Number: 9464

4 VS-HF5PB6PbF, VS-HF5PB6-N3 4 I F = 5 I F = 5 I F = 4 t rr (ns) 8 6 Q rr (n) 8 6 I F = 5 I F = 5 I F = 4 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt 4 di F /dt (/µs) Fig. 7 - Typical Stored harge vs. di F /dt 3 5 I RR () 5 I F = 3 I F = 5 I F = 5. di (rec)m /dt (/µs) I F = 5 I F = 5 I F = 5 di F /dt (/µs) Fig. 6 - Typical Recovery urrent vs. di F /dt di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt L = 7 μh. Ω D.U.T. di F /dt adjust G D IRFP5 S Fig. 9 - Reverse Recovery Parameter Test ircuit Revision: 4-Jul-5 4 Document Number: 9464

5 VS-HF5PB6PbF, VS-HF5PB6-N3 (3) I F t a t rr tb () I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions ORDERING INFORMTION TBLE Device code VS- HF 5 PB 6 PbF product - HEXFRED family 3 - Electron irradiated 4 - urrent rating (5 = 5 ) 5 - PB = TO-47 modified Voltage rating: (6 = 6 V) - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-HF5PB6PbF 5 5 ntistatic plastic tube VS-HF5PB6-N3 5 5 ntistatic plastic tube LINKS TO RELTED DOUMENTS Dimensions Part marking information TO-47 modified PbF TO-47 modified -N Revision: 4-Jul-5 5 Document Number: 9464

6 DIMENSIONS in millimeters and inches TO-47-5 mils L/F modified Outline Dimensions B () R/ Q (3) E N S (6) Ø P (Datum B) Ø K M D B M Ø P D x R () D D (4) 3 D Thermal pad 4 (5) L L See view B (4) E x b 3 x b. M M b4 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS.5 BS b Ø K.54. b L b L b N 7.6 BS.3 b Ø P c Ø P c Q D R D S 5.5 BS.7 BS Notes () Dimensioning and tolerance per SME Y4.5M-994 () ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-47 with exception of dimension c and Q Revision: -pr-5 Document Number: 9554

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