C650 and C850 Series TBU High-Speed Protectors

*RoHS COMPLIANT Features Formerly brand Extremely high speed performance Blocks high voltages and currents Very high bandwidth; GHz compatible Small package, minimal PCB area Simple, superior circuit protection RoHS compliant*, UL Recognized The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. C650 and C850 Series TBU High-Speed Protectors Transient Blocking Units - TBU evices Bourns C650 and C850 series products are high-speed bidirectional protection components, constructed using MOSFET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. The TBU high-speed protector, triggering as a function of the MOSFET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU device is provided in a surface mount FN package and meets industry standard requirements such as RoHS and Pb Free solder refl ow profi les. Agency Approval UL recognized component File # E5805. Industry Standards escription Model C650 GR-089 Port Type,, 5 C850 Telcordia C650 GR-974 C850 ITU-T K.0, K.0E, K., K.E, K.45 C850 Absolute Maximum Ratings (T amb = 5 C) Symbol Parameter Value Unit V imp V rms Electrical Characteristics (T amb = 5 C) Symbol Parameter Min. Typ. Max. Unit I op I trigger I out R device t block I quiescent V reset Maximum protection voltage for impulse faults with rise time µsec Maximum protection voltage for continuous V rms faults Maximum current through the device that will not cause current blocking Typical current for the device to go from normal operating state to protected state Maximum current through the device Series resistance of the TBU device Maximum time for the device to go from normal operating state to protected state Current through the triggered TBU device with 50 Vdc circuit voltage Voltage below which the triggered TBU device will transition to normal operating state Cx50-00-WH Cx50-80-WH Cx50-60-WH Cx50-00-WH Cx50-80-WH Cx50-60-WH Cx50-00-WH Cx50-80-WH Cx50-60-WH C650-00-WH C650-80-WH C650-60-WH C850-00-WH C850-80-WH C850-60-WH C650-xxx-WH C850-xxx-WH C650-xxx-WH C850-xxx-WH T op Operating temperature range -40 to +85 C T stg Storage temperature range -65 to +50 C C650 and C850 TBU High-Speed Protectors are bidirectional; specifi cations are valid in both directions. 650 850 00 45 *RoHS irective 00/95/EC Jan. 7, 00 including annex and RoHS Recast 0/65/EU June 8, 0. 50 0 0 8 8 7 00 80 60 00 60 50 4.5 0 0 9 4 4 V V ma ma ma Ω µs ma 4 V

Applications Combo voice / xsl linecards Voice linecards MF, primary protection modules Process control equipment Test and measurement equipment General electronics C650 and C850 Series TBU High-Speed Protectors Typical Performance Characteristics V-I Characteristics +I Time to Block vs. Fault Current 0. -V reset Itrigger +V Time to Block (sec) 0.0 0.00 0.000 0.0000 0.00000 -I trigger V reset 0.000000 0. 0 00 000 Fault Current (A ) Current vs. Temperature 40 0 % of Current 00 80 60 40 0-40 -0 0 0 40 60 80 Temperature ( C)

Operational Characteristics The graphs below demonstrate the operational characteristics of the TBU protector. For each graph the fault voltage, protected side voltage, and current is presented. TEST CONFIGURATION IAGRAM V V Load C650 Lightning, 650 V C850 Lightning, 850 V 00 V/div. 400 ma/div. 00 V/div. 400 ma/div. µs/div. Ch V Ch V Ch Current µs/div. Ch V Ch V Ch Current C650 Power Fault, 00 Vrms, 00 A C850 Power Fault, 45 Vrms, 00 A 00 V/div. 00 ma/div. 00 V/div. 00 ma/div. 4 ms/div. Ch V Ch V Ch Current 4 ms/div. Ch V Ch V Ch Current

Product imensions C PIN B XXXXX YWWLL Recommended Pad Layout.55 (.40) 0.70 (.08).65 (.0) A A SEATING PLANE TOP VIEW SIE VIEW BOTTOM VIEW.5 (.045) H J Pad # J E H Pad esignation F Apply In/Out NC In/Out NC = Solder to PCB; do not make electrical connection, do not connect to ground. K K im. Min. Typ. Max. A A B C E F H J K 0.80 (.0) 0.00 (.000) 8.5 (.).90 (.54).55 (.00).0 (.04).45 (.6) 0.0 (.008) 0.65 (.06) 0.0 (.008) IMENSIONS: 0.90 (.05) 0.05 (.00) 8.5 (.5) 4.00 (.57).60 (.0).5 (.045).50 (.8) 0.5 (.00) 0.70 (.08) 0.5 (.00) MM (INCHES).00 (.09) 0.050 (.00) 8.5 (.9) 4.0 (.6).65 (.04).0 (.047).55 (.40) 0.0 (.0) 0.75 (.00) 0.0 (.0) TBU protectors have matte-tin termination fi nish. Suggested layout should use non-solder mask defi ne (NSM). Recommended stencil thickness is 0.0-0. mm (.004-.005 in.) with stencil opening size 0.05 mm (.000 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. Thermal Resistances Symbol Parameter Value Unit R th(j-a) Junction to leads (package) 6 C/W Reflow Profile Profile Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 50 C 00 C 60-80 sec. Time maintained above: - Temperature (TL) - Time (tl) 7 C 60-50 sec. Peak/Classifi cation Temperature (Tp) 60 C Time within 5 C of Actual Peak Temp. (tp) 0-40 sec. Ramp-own Rate 6 C/sec. max. Time 5 C to Peak Temperature 8 min. max.

How to Order Form Factor C = One TBU protector in the device Impulse Voltage Rating 650 = 650 V 850 = 850 V Iop Indicator 00 = 00 ma 80 = 80 ma 60 = 60 ma C 650-80 - WH Typical Part Marking MANUFACTURER S TRAEMARK XXXXX YWWLL PIN MANUFACTURING ATE COE: ST IGIT INICATES THE YEAR. N & R IGITS INICATE THE WEEK NUMBER. 4TH & 5TH IGITS INICATE LOT COE. 5 IGIT PROUCT COE: ST ALPHA CHARACTER INICATES PROUCT FAMILY. C = C650/C850 SERIES N & R IGITS INICATE IMPULSE VOLTAGE. 4TH & 5TH IGITS INICATE TRIGGER CURRENT. Packaging Specifications (per EIA468-B) B t TOP COVER TAPE P 0 P E A N F W C K 0 B 0 G (MEASURE AT HUB) A 0 P CENTER LINES OF CAVITY EMBOSSMENT evice C650, C850 evice C650, C850 evice C650, C850 USER IRECTION OF FEE QUANTITY: 000 PIECES PER REEL A B C G N Min. Max. Min. Max. Min. Max. Min. Max. Ref. Ref. 6 0.5.5.5.8.5 0. 6.5 0 - (.85) (.00) (.059) (.098) (.504) (.5) (.795) (.650) (4.06) A0 B0 E F Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. max. 4. 4.4 8.45 8.65.5.6.5.65.85 7.4 7.6 - (.65) (.7) (.) (.4) (.059) (.06) (.059) (.065) (.07) (.9) (.99) K0 P P0 P t W Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max... 7.9 8..9 4..9. 0.5 0.5 5.7 6. (.04) (.05) (.) (.9) (.59) (.6) (.075) (.08) (.00) (.04) (.68) (.64) IMENSIONS: MM (INCHES)

Reference Application The C-series devices are general protectors that can be used in a variety of applications. The basic operation of the device will be demonstrated using the single line application shown in the fi gure below. The test circuit was subjected to a 000 V, 0/700 µs surge waveform. The devices used were the TBU-C850-00-WH and a 0-4T-SM-RPLF GT (OVP) with a 0 ohm resistor for the load impedance. Line OVP TBU evice ZLOA General Application Circuit The graph below shows the waveforms for the voltage across the overvoltage protector (GT) and the current through the TBU device. As the input line voltage increases, the current through the TBU device increases rapidly until the trip current is reached. ue to fi nite reaction time for fast transients, the peak level may exceed the low frequency data sheet maximum for a very short period, typically ~00 ns. After this initial overshoot, the TBU device will transition to the protected state, setting the current to the nominal current limiting level (~50 ma for this example). The TBU device will then reduce the current down it to its very low quiescent level of ma, typically. As the input line voltage increases to about 500 V, the GT is triggered, reducing the input line voltage to a very low level which prevents the TBU device from being subjected to a voltage level which exceeds its maximum rating (850 V in this example). The TBU High-Speed Orotector and the GT will remain in these states until the surge ends, which is about 700 µs later in this example. Only the fi rst 4 µs of the surge are shown in the graph. For surges or AC voltages below the GT breakover voltage, the GT will not activate, and the TBU device will stay in the protecting mode, blocking high voltages from the protected equipment. Voltage Across GT (V) 900 800 700 600 500 400 00 00 00 0 00 TBU evice Current GT Voltage 000 800 600 400 00 0-00 -400-600 -800-000 0 0.5.5.5.5 4 TBU evice Current (ma) Time (µs) TBU-C850-00-WH Response to a 000 V, 0/700 µs Surge REV. 09/5 TBU is a registered trademark of Bourns, Inc. in the United States and other countries.