Introduction to VLSI design (EECS 467)

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Introduction to VLSI design (EECS 467) Proect Short-Channel Effects in MOSFETs December 11 th, Fabio D gostino Daniele Quercia - 1 -

Short-Channel Devices MOSFET device is considered to be short when the channel length is the same order of magnitude as the depletion-layer widths (, ds ) of the source and drain unction. s the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise. Short-Channel Effects The short-channel effects are attributed to two physical phenomena: 1. the limitation imposed on electron drift characteristics in the channel,. the modification of the threshold voltage due to the shortening channel length. In particular five different short-channel effects can be distinguished: 1. drain-induced barrier lowering and punchthrough. surface scattering 3. velocity saturation 4. impact ionization 5. hot electrons Drain-induced barrier lowering and punchthrough The epressions for the drain and source unction widths are: and = ε φ ( V V ) DS qn ε SB ( V ) ds = qn φ where V SB and V DB are source-to-body and drain-to-body voltages. When the depletion regions surrounding the drain etends to the source, so that the two depletion layer merge (i.e., when ds = L), punchtrough occurs. Punchthrough can be minimized with thinner oides, larger substrate doping, shallower unctions, and obviously with longer channels. The current flow in the channel depends on creating and sustaining an inversion layer on the surface. If the gate bias voltage is not sufficient to invert the surface (V GS <V T ), the carriers (electrons) in the channel face a potential barrier that blocks the flow. Increasing the gate voltage reduces this potential barrier and, eventually, allows the flow of carriers under the influence of the channel electric field. In small-geometry MOSFETs, the potential barrier is controlled by both the gate-to-source voltage V GS and the drain-to-source voltage V DS. If the drain voltage is increased, the potential barrier in the channel decreases, leading to drain-induced barrier lowering (DIBL). The reduction of the potential barrier eventually allows electron flow between the source and the drain, even if the gate-to-source voltage is lower than the threshold voltage. The channel current that flows under this conditions (V GS <V T ) is called the sub-threshold current. Surface scattering s the channel length becomes smaller due to the lateral etension of the depletion layer into the channel region, the longitudinal electric field component ε y increases, and the surface mobility becomes field-dependent. nce the carrier transport in a MOSFET is confined within the narrow DB - -

inversion layer, and the surface scattering (that is the collisions suffered by the electrons that are accelerated toward the interface by ε ) causes reduction of the mobility, the electrons move with great difficulty parallel to the interface, so that the average surface mobility, even for small values of ε y, is about half as much as that of the bulk mobility. Velocity saturation The performance short-channel devices is also affected by velocity saturation, which reduces the transconductance in the saturation mode. t low ε y, the electron drift velocity v de in the channel varies linearly with the electric field intensity. However, as ε y increases above 1 4 V/cm, the drift velocity tends to increase more slowly, and approaches a saturation value of v de(sat) =1 7 cm/s around ε y =1 5 V/cm at 3 K. Note that the drain current is limited by velocity saturation instead of pinchoff. This occurs in shortchannel devices when the dimensions are scaled without lowering the bias voltages. Using v de(sat), the maimum gain possible for a MOSFET can be defined as g = WC m - 3 - v o de(sat ) Impact ionization nother undesirable short-channel effect, especially in NMOS, occurs due to the high velocity of electrons in presence of high longitudinal fields that can generate electron-hole (e-h) pairs by impact ionization, that is, by impacting on silicon atoms and ionizing them. It happens as follow: normally, most of the electrons are attracted by the drain, while the holes enter the substrate to form part of the parasitic substrate current. Moreover, the region between the source and the drain can act like the base of an npn transistor, with the source playing the role of the emitter and the drain that of the collector. If the aforementioned holes are collected by the source, and the corresponding hole current creates a voltage drop in the substrate material of the order of.6v, the normally reversed-biased substrate-source pn unction will conduct appreciably. Then electrons can be inected from the source to the substrate, similar to the inection of electrons from the emitter to the base. They can gain enough energy as they travel toward the drain to create new e- h pairs. The situation can worsen if some electrons generated due to high fields escape the drain field to travel into the substrate, thereby affecting other devices on a chip. Hot electrons nother problem, related to high electric fields, is caused by so-called hot electrons. This highenergy electrons can enter the oide, where they can be trapped, giving rise to oide charging that

can accumulate with time and degrade the device performance by increasing V T and affect adversely the gate s control on the drain current. The modification of the threshold voltage due to Short-Channel Effects (SCE) The equation giving the threshold voltage at zero-bias 1 qdi V T VFB F q N ( F ) C = φ ε φ o Co is accurate in describing large MOS transistors, but it collapses when applied to small-geometry MOSFETs. In fact that equation assumes that the bulk depletion charge is only due to the electric field created by the gate voltage, while the depletion charge near n source and drain region is actually induced by pn unction band bending. Therefore, the amount of bulk charge the gate voltage supports is overestimated, leading to a larger V T than the actual value. The electric flu lines generated by the charge on the MOS capacitor gate electrode terminate on the induced mobile carriers in the depletion region ust under the gate. For short-channel MOSFETs, on the other hand, some of the field lines originating from the source and the drain electrodes terminate on charges in the channel region. Thus, less gate voltage is required to cause inversion. This implies that the fraction of the bulk deplition charge originating from the pn unction depletion and hence requiring no gate voltage, must be subtracted from the V T epression. The figure shows the simplified geometry of the gate-induced bulk depletion region and the p-n unction depletion regions in a short channel MOS transistor. Note that the bulk deplition region is assumed to have and asymetric trapezoidal shape, instead of a rectangural shape, to represent - 4 -

accurately the gate-induced charge. The drain deplition region is epected to be larger than the source depletion region because the positive drain-to-source voltage reversed-biases the drainsubstrate unction. We recognize that a significant portion of the total deplition region charge under the gate is actually due to the source and drain unction depletion, rather than the bulk depletion induced by the gate voltage. nce the bulk deplition charge in the short channel device is smaller than epected, the threshold voltage epression must be modified to account for this reduction: V T ( short channel) = VT VT, where V T is the zero-bias threshold voltage calculated using the conventional long-channel formula and V T is the threshold voltage shift (reduction) due to the short-channel effect. The reduction term actually represents the amount of charge differential between a rectangular depletion region and a trapezoidal deplition region. Let L S and L D represent the lateral etent of the depletion regions associated with the source unction and the drain unction, respectively. Then, the bulk depletion region charge contained within the trapezoidal region is Q L L L S D B = 1 qε N φ F To calculate L S and L D, we will use the simplified geometry shown in the figure. Here, ds and represent the depth of the pn-unction depletion regions associated with the source and the drain, respectively. The edges of the source and drain diffusion regions are represented by quarter-circular arcs, each with a radius equal to the unction depth,. The vertical etent of the bulk depletion region into the substrate is represented by dm. The unction depletion region depths can be approimated by and ε qn = DS ds = ε qn ( V φ ) ( φ ) with the unction built-in voltage kt N DN φ = ln q ni - 5 -

- 6 - From figure, we find the following relationship between L D and the depletion region depths. ( ) ( ) D dm L = = dm D D L L Solving for L D we obtain: ( ) = 1 1 dm D L milarly, the length L S can also be found as follows: 1 1 ds S L Now, the amount of the threshold voltage reduction V T due to short-channel effects can be found as: = 1 1 1 1 1 ds F o T L N q C V φ ε The threshold voltage shift term is proportional to /L. s a result, this term becomes more prominent for MOS transistors with shorter channel lengths, and it approaches zero for longchannel MOSFETs where L >>.

Numerical eample We consider an n-channel MOS process with the following parameters: substrate doping density N =1 16 cm -3, polysilicon gate doping density N D (gate) = 1 cm -3, gate oide tickness t o = 5 nm, oide-interface fied charge density N o =4*1 1 cm -, and source and drain diffusion doping density N D = 1 17 cm -3. In addition, we assume that the channel region is implanted with p-type impurities (impurity concentration N I = 1 11 cm - ) to adust the threshold voltage. Moreover, the unction depth of the source and drain diffusion regions is =1. µm. Obective: Plotting the variation of the threshold voltage V T as a function of the channel length. Now, we can calculate the work function difference between the gate and the channel: Φ GC = Φ GC(substrate) -Φ F(gate) = -.35V.55V= -.9 V. The depletion region charge density at V SB = is found as follows: Q B =- q N ε -Φ F(substrate) = -4.8 1-8 C/cm ; The oide-interface charge is: Q o = q N o = 6.4 1-9 C/cm ; The gate oide capacitance per unit area is calculated using the dielectric constant of the silicon dioide and the oide thickness to: C o = ε o / t o = 7.3 1-8 F/cm ; Now, we can combine all components and calculate the threshold voltage without the channel implant. V T = Φ GC Φ F (substrate) (Q B /C o ) (Q o /C o ) =.4 V Thus, we find the long-channel zero-bias threshold voltage for the process described above as V T = V T (q N I )/C o =.855 V. Net, the amount of the threshold voltage reduction due to short-channel effects must be calculated. The source and drain unction built-in voltage is Φ = (kt/q) ln((n D N )/ n i )=.76 V The depths of source and drain unction depletion regions is found as ds = ( ( ε si )/(q N ) Φ ) =.314 µm ε qn = DS ( V φ ) - 7 -

Now, the threshold voltage shift V T can be calculated as a function of the gate length L and of the drain-to-source voltage V DS (see the previous paragraph). V T = (.343/ L[µm] ) * (-.74 ( 1 ) where =.13 (.76 V DS ) The threshold voltage of this short-channel MOS transistor is calculated as V T =.855V - V T ; The Matlab source simulating the previous epression of the threshold voltage is supplied. - 8 -

close all, clear all; pack; % arrays for the different values of Vth @ Vds=1V,Vds=3V, Vds=5V. vector_vt1=[]; vector_vt3=[]; vector_vt5=[]; % arrays for the different values of L @ Vds=1V,Vds=3V, Vds=5V. vector_l1=[]; vector_l3=[]; vector_l5=[]; % for Vds=1 V vds=1; for l=.5:.1:6 rad=sqrt(.13*(.76vds)); rad1=sqrt(1(*rad)); deltavt=(.343/l)*(rad1-.74); vt=.855-deltavt; vector_l1=[vector_l1,l]; vector_vt1=[vector_vt1,vt]; end %for Vds=3 V vds=3; for l=.5:.1:6 rad=sqrt(.13*(.76vds)); rad1=sqrt(1(*rad)); deltavt=(.343/l)*(rad1-.74); vt=.855-deltavt; vector_l3=[vector_l3,l]; vector_vt3=[vector_vt3,vt]; end %for Vds=5 V vds=5; for l=.5:.1:6 rad=sqrt(.13*(.76vds)); rad1=sqrt(1(*rad)); deltavt=(.343/l)*(rad1-.74); vt=.855-deltavt; vector_l5=[vector_l5,l]; vector_vt5=[vector_vt5,vt]; end % graps of Vth vs. L @ Vds=1V,Vds=3V, Vds=5V. plot(vector_l1,vector_vt1,':',vector_l3,vector_vt3,'-.',vector_l5,vector_vt5,'.'), %comments on the plot label('l: Channel length [um]'), ylabel('vth: Threshold voltage [V]'), title('(vth vs. L) @ Vds=1V [-----] Vds=3V [_._._] Vds=5V [...]'); - 9 -

In the net graph, the output of the previous Matlab file is shown. That plot shows the variation of the threshold voltage with the channel length. The threshold voltage decreases by as much as 5% for channel lengths in the submicron range, while it approaches the value of.8v for larger channel lengths. If the drain voltage is increased, the potential barrier in the channel decreases, leading to draininduced barrier lowering (DIBL). The reduction of the potential barrier eventually allows electron flow between the source and the drain, even if the gate-to-source voltage is lower than the threshold voltage. The channel current that flows under this conditions (V GS <V T ) is called the sub-threshold current..9 (Vth vs. L) @ Vds=1V [-----] Vds=3V [_._._] Vds=5V [_].8 Vth: Threshold voltage [V].7.6.5.4.3. 1 3 4 5 6 L: Channel length [um] - 1 -

mulations nalysis of the short-channel effects on the threshold voltage To illustrate the impact of short-channel effects on the threshold voltage, we use SPICE to simualate a circuit with four n-mosfet connected in parallel. We use LEVEL spice model to generate I D V GS characteristics for V DS =.1V. The transistors have the same parameters ecept for the channel length and width that have been set to 1, 5, 1 and.5µm. -------Short channel effects on the Threshold Voltage (3.) VDS 1.1V VGS M1 1 N1 M 1 N M3 1 N3 M4 1 N4.MODEL N1 NMOS LEVEL= TOX=5n NSUB=1E16 L=1u W=1u.MODEL N NMOS LEVEL= TOX=5n NSUB=1E16 L=5u W=5u.MODEL N3 NMOS LEVEL= TOX=5n NSUB=1E16 L=1u W=1u.MODEL N4 NMOS LEVEL= TOX=5n NSUB=1E16 L=.5u W=.5u.DC VGS 1.1V.PROBE.END The resulting plot is reported below. It shows that, those devices with smaller geometry have higher drain currents at the same gate-to-source voltage; hense devices with smaller geometry have lower threshold voltages. - 11 -

- 1 -

The limiting effect of the drift velocity In order to investigates the limiting effect of velocity saturation on the drain current of a shortchannel nmos, we use LEVEL spice model to generate I D - V DS characteristics of two transistors connected in parallel. The two transistors have the same parameters ecept for VMX, representing the maimum drift velocity, limited in the first transistor to the value 1 6 m/s. In the following lines the Pspice netlist is presented: -------Limiting effect of velocity saturation on the drain current of SC n-mos VDS 1 VGS 5V M1 1 N1 M 1 N.MODEL N1 NMOS LEVEL= TOX=5n NSUB=1E16 L=1u W=1u VMX=E6.MODEL N NMOS LEVEL= TOX=5n NSUB=1E16 L=1u W=1u.DC VDS 5.5.PROBE.END The parameters NSUB and TOX represent respectively the substrate doping and the oide thickness of the n-mos device. The plot shows the reduction of the transconductance in the saturation mode. - 13 -

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Conclusions The design of Ics was in the past simplified also due to over-designing. But as technology moves deeper into UDSM this is not a viable approach. Too much performance is sacrificed or the area penalty of over-designing leads to decreased yields. However, pushing the edge of the envelope may lead to under-design. Chips that have been under-designed often fail on the test bench or later in the field. Therefore, situations of over-design and under-design must both be identified when evaluating the integrity of a power distribution system. In the end, the design tradeoffs that satisfy all the necessary constraints are too comple to handle without tools that provide visibility into specific problems and their location on a chip. Designers are often required to tape out a design, and are left hoping that nothing will go wrong when the chip comes back from the fab. Murphi s Law is apropos for this situation: if something can go wrong, it probably will. REFERENCES Xing Zhou, Khee Yong Lim - general approach to compact threshold Voltage formulation based on -D numerical simulation and eperimental correlation for deep.submicron ULSI technology development Kai Chen and Chenming Hu - Performance and Vdd scaling in deep submicrometer CMOS Haldun H. Digital microelectronics Resve Saleh, Michael Benoit and Pete McCrorie - Power distribution planning Sani R. Nassif Design for Variability in DSM Technologies Sung-Mo, Yusuf CMOS digital integrated circuits Lim, Zhou, Zu, Ho, Loiko, Lau, Tse, Choo predictive semi-analytical threshold voltage model for deep-submicron MOSFET s Weste, Eshraghian Principles of CMOS VLSI Design - 15 -

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