Lecture 060 Push-Pull Output Stages (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

Size: px
Start display at page:

Download "Lecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002"

Transcription

1 Lecture 060 PushPull Output Stages (1/11/04) Page 0601 LECTURE 060 PUSHPULL OUTPUT STAGES (READING: GHLM , AH ) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output power in the form of voltage or current. 2.) Avoid signal distortion. 3.) Be efficient 4.) Provide protection from abnormal conditions (short circuit, over temperature, etc.) Outline PushPull MOS (Class B) PushPull BJT (Class B) Summary Lecture 060 PushPull Output Stages (1/11/04) Page 0602 PUSHPULL MOS OUTPUT STAGES (Class AB and B) PushPull Source Follower V Can both sink and source DD M6 current and provide a slightly V GG M5 lower output resistance. V Bias V Bias Efficiency: M3 Depends on how the transistors are biased. Class B one transistor has current flow for only 180 of the sinusoid (half period) (peak) 2 Efficiency = P RL 2 π P VDD = 1 2v ( ) OUT = (peak) (peak) 2 V DD 2 π Maximum efficiency occurs when (peak) = and is 78.5% Class AB each transistor has current flow for more than 180 of the sinusoid. Maximum efficiency is between 25% and 78.5% M4 Fig

2 Lecture 060 PushPull Output Stages (1/11/04) Page 0603 Illustration of Class B and Class AB PushPull, Source Follower Output current and voltage characteristics of the pushpull, source follower ( = 1kΩ): 2V 1V v G1 i D1 1mA 2V 1V v G1 id1 1mA 0V 0mA 0V 0mA 1V 2V v G V in (V) Class B, pushpull, source follower 1mA Comments: Note that cannot reach the extreme values of and 1V 2V v G2 1mA V in (V) Class AB, pushpull, source follower Fig I OUT (max) and I OUT (max) is always less than / or / For = 0V, there is quiescent current flowing in and for Class AB Note that there is significant distortion at =0V for the Class B pushpull follower Lecture 060 PushPull Output Stages (1/11/04) Page 0604 SmallSignal Performance of the PushPull Follower Model: v gs1 C 1 v in rds1 r ds2 g m1 v gs1 g mbs1 v bs1 g m2 v gs2 g mbs2 v bs2 C 2 vout v gs1 C 1 v in 1 g g m1 v in r g m1 v g mbs1 v m2 out out ds1 g m2 v in g m2 g mbs2 rds2 Fig g m1 g m2 v = in g ds1 g ds2 g m1 g mbs1 g m2 g mbs2 G L 1 R out = g ds1 g ds2 g m1 g mbs1 g m2 g mbs2 (does not include ) If = = 2.5V, V out = 0V, I D1 = I D2 = 500µA, and W/L = 20µm/2µm, A v = ( = ) and R out = 448Ω. A zero and pole are located at z = (g m1g m2 ) C 1 p = (g ds1g ds2 g m1 g mbs1 g m2 g mbs2 G L ) C 1 C 2. These roots will be highfrequency because the associated resistances are small. C 2 vout

3 Lecture 060 PushPull Output Stages (1/11/04) Page 0605 PushPull, Common Source Amplifiers Similar to the class A but can operate as class B providing higher efficiency. V TR2 V TR1 Fig Comments: The batteries V TR1 and V TR2 are necessary to control the bias current in and. The efficiency is the same as the pushpull, source follower. Lecture 060 PushPull Output Stages (1/11/04) Page 0606 Practical Implementation of the PushPull, Common Source Amplifier Method 1 M5 M6 M3 V GG3 M4 V GG4 M7 M8 Fig V GG3 and V GG4 can be used to bias this amplifier in class AB or class B operation. Note, that the bias current in M6 and M8 is not dependent upon or (assuming V GG3 and V GG4 are not dependent on and ).

4 Lecture 060 PushPull Output Stages (1/11/04) Page 0607 Practical Implementation of the PushPull, Common Source Amplifier Method 2 M7 M5 I=2I b I b v in v in M8 I b M3 M4 M6 I=2I b M9 0 Fig In steadystate, the current through M5 and M6 is 2I b. If W 4 /L 4 = W 9 /L 9 and W 3 /L 3 = W 8 /L 8, then the currents in and can be determined by the following relationship: W 1 /L 1 W 2 /L 2 I 1 = I 2 = I b W 7 /L 7 = I b W 10 /L 10 If v in goes low, M5 pulls the gates of and high. M4 shuts off causing all of the current flowing through M5 (2I b ) to flow through M3 shutting off. The gate of is high allowing the buffer to strongly sink current. If v in goes high, M6 pulls the gates of and low. As before, this shuts off and turns on allowing strong sourcing. Lecture 060 PushPull Output Stages (1/11/04) Page 0608 Illustration of Class B and Class AB PushPull, Inverting Amplifier Output current and voltage characteristics of the pushpull, inverting amplifier ( = 1kΩ): 2V 1V 0V i D1 v G2 i D1 v G1 2mA 1mA 0mA 2V 1V 0V i D1 v G2 i D1 v G1 2mA 1mA 0mA 1V 1mA 1V 1mA 2V 2mA 2V 2mA 2V 1V 0V 1V 2V Class B, pushpull, inverting amplifier. 2V 1V 0V 1V 2V Class AB, pushpull, inverting amplifier. Fig Comments: Note that there is significant distortion at =0V for the Class B inverter Note that cannot reach the extreme values of and I OUT (max) and I OUT (max) is always less than / or / For = 0V, there is quiescent current flowing in and for Class AB

5 Lecture 060 PushPull Output Stages (1/11/04) Page 0609 Use of Negative, Shunt Feedback to Reduce the Output Resistance Concept: Error Amplifier Error Amplifier Fig r ds1 r ds2 R out = 1Loop Gain Comments: Can achieve output resistances as low as 10Ω. If the error amplifiers are not balanced, it is difficult to control the quiescent current in and Great linearity because of the strong feedback Can be efficient if operated in class B or class AB Lecture 060 PushPull Output Stages (1/11/04) Page Simple Implementation of Neg., Shunt Feedback to Reduce the Output Resistance R 1 R 2 R 1 Loop gain R 1 R 2 g m1 g m2 g ds1 g ds2 G L Fig r ds1 r ds2 R out = 1 R 1 R 1 R g m1 g m2 2 g ds1 g ds2 G L Let R 1 = R 2, =, I Bias = 500µA, W 1 /L 1 = 100µm/1µm and W 2 /L 2 = 200µm/1µm. Thus, g m1 = 3.316mS, g m2 = 3.162mS, r ds1 = 50kΩ and r ds2 = 40kΩ. 50kΩ 40kΩ 22.22kΩ R out = = 10.5(143.9) = 304Ω (R out = 5.42kΩ if = 1kΩ) 2520

6 Lecture 060 PushPull Output Stages (1/11/04) Page What about the use of BJTs in CMOS Technology? M3 i B pwell CMOS M3 i B VSS nwell CMOS Fig Comments: Can use either substrate or lateral BJTs. Smallsignal output resistance is 1/g m which can easily be less than 100Ω. Unfortunately, only PNP or NPN BJTs are available but not both on a standard CMOS technology. In order for the BJT to sink (or source) large currents, the base current, i B, must be large. Providing large currents as the voltage gets to extreme values is difficult for MOSFET circuits to accomplish. If one considers the MOSFET driver, the emitter can only pull to within v BE V ON of the power supply rails. This value can be 1V or more. Lecture 060 PushPull Output Stages (1/11/04) Page PUSHPULL BJT OUTPUT STAGES (Class AB and B) Simple Class B Output Stage vout V BE1 V BE (on) V BE (on) V EE V BE2 V CE1 (sat) Slope 1 on off Saturates V BE1 V CE1 (sat) V EE Saturates Slope 1 off on V EE V BE2 Fig Class B operation: Two active devices are used to deliver the power instead of one. Each device conducts for alternate half cycles. Efficiency can approach 78.5% Can suffer from crossover distortion the transition from one device to the other.

7 Lecture 060 PushPull Output Stages (1/11/04) Page Class AB Output Stage V BE1 Saturates I Q Q3 Q4 Slope 1 V BE (on) V EE Saturates V EE V EB2 Fig I Q sets up the bias current in and when there is no input signal. Each transistor is biased so that there is a region in the middle where both are on (Class AB) Lecture 060 PushPull Output Stages (1/11/04) Page Power Considerations in the Class B Output Stage Voltage and current waveforms for a Class B amplifier: v in I Q Q3 Q4 v in i c1 R i L c2 V EE i c1 T T 2T V out (peak) 2T I c1 (peak) t t i c2 T T 2T 2T t t I c2 (peak) Fig

8 Lecture 060 PushPull Output Stages (1/11/04) Page Efficiency Considerations of the ClassB PushPull Output Stage Load line for one device in a classb stage: Efficiency: i C1 Load Line Peak device dissipation Constant Power Curve V CE1 (sat) Load Line Quiescent Point VCC 2 V CE1 (sat) v CE1 Fig P L = 1 [V out(peak)]2 2 1T and P supply = 2 I supply = 2 T i C (t)dt = 2V I c (peak) CC π = 2 π R 0 L V out (peak) P L η = P = π V out(peak) supply 4 V η CC max = π 4 = 78.6% Max. efficiency for the above classb pushpull output stage is η max = π V CE (sat) 4 Lecture 060 PushPull Output Stages (1/11/04) Page Output Stage 4 10 = 10kΩ 1 I Q 3 Q3 2 vout = 1kΩ Fig V EE Output Stage Voltage Transfer Function.MODEL BJTN NPN IS=1E14 BF=100 VAF=50.MODEL BJTP PNP IS=1E14 BF=50 VAF= BJTN BJTP Q BJTN VCC 4 0 DC 10V VEE 5 0 DC 10V VIN 1 5 RL 2 0 1KILOHM R KILOHM.DC VIN PRINT DC V(2).PROBE.END This stage assumes that feedback will be used around the amplifier which will linearize the nonlinearity of the output stage.

9 Lecture 060 PushPull Output Stages (1/11/04) Page Output Stage 3C 3B 6 7 3A mA 9 Fig R 10 = 40kΩ V EE Output Stage Voltage Transfer Function RL = 1Kilohm.MODEL BJTN NPN IS=1E14 BF=100 VAF=50.MODEL BJTP PNP IS=1E14 BF=50 VAF= BJTP BJTP BJTN BJTN BJTN BJTN 3A BJTP 3B BJTP vout C BJTP VCC 7 0 DC 15V VEE 8 0 DC 15V IBIAS UA VIN 9 8 DC R KILOHM RL 2 0 1KILOHM.DC VIN PRINT DC V(2).PROBE.END Lecture 060 PushPull Output Stages (1/11/04) Page QuasiComplementary Output Stages Quasicomplementary connections are used to improve the performance of the PNP or PMOS transistor. Composite connections: B V EB I C1 E C I E I C B E V EB PNP Equivalent: I C = (1β 2 ) I C1 = (1β 2 ) I s exp V EB V t The composite has the beta of an NPN C I E I C G V SG I D1 S D I D G S V SG D Fig PMOS Equivalent: I D = (1β 2 ) I D1 = (1β 2 ) K P W 1 2L (V 1 GS V T ) 2 The composite has an enhanced K I D

10 Lecture 060 PushPull Output Stages (1/11/04) Page Overload Protection For circuits that can provide large amounts of output current, it is necessary to provide shortcircuit current protection. Example: i i i C2 i B1 i C1 I Lim im = 0 im 0 im Fig ShortCircuit 0 0 i i = i C1 i C2 i C1 = β 1 i B1 = β 1 (i i i C2 ) v BE2 i C1 im But i C2 I s2 exp V t I s2 exp V t i C1 im = β 1 i i I s2 exp V t As increases, turns on and pulls base current away from limiting the output current. Lecture 060 PushPull Output Stages (1/11/04) Page SUMMARY Requirements of Output Stages The objectives are to provide output power in form of voltage and/or current. In addition, the output amplifier should be linear and be efficient. Low output resistance is required to provide power efficiently to a small load resistance. High source/sink currents are required to provide sufficient output voltage rate due to large load capacitances. Types of output stages considered: Class B or AB stage with pushpull (maximum efficiency was 78.6%) Quasicomplementary devices help improve the performance of the ptype devices Protection circuits prevent large currents from flowing in the output devices For large load capacitors all that is required from an output stage is large current, the output resistance does not have to be small

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base

More information

CHAPTER 10 OPERATIONAL-AMPLIFIER CIRCUITS

CHAPTER 10 OPERATIONAL-AMPLIFIER CIRCUITS CHAPTER 10 OPERATIONAL-AMPLIFIER CIRCUITS Chapter Outline 10.1 The Two-Stage CMOS Op Amp 10.2 The Folded-Cascode CMOS Op Amp 10.3 The 741 Op-Amp Circuit 10.4 DC Analysis of the 741 10.5 Small-Signal Analysis

More information

CHAPTER 2 POWER AMPLIFIER

CHAPTER 2 POWER AMPLIFIER CHATER 2 OWER AMLFER 2.0 ntroduction The main characteristics of an amplifier are Linearity, efficiency, output power, and signal gain. n general, there is a trade off between these characteristics. For

More information

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. Whites, EE 320 Lecture 30 Page 1 of 8 Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. There are two different environments in which MOSFET amplifiers are found, (1) discrete circuits and

More information

Bipolar Junction Transistor Basics

Bipolar Junction Transistor Basics by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical

More information

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits Notes about Small Signal Model for EE 40 Intro to Microelectronic Circuits 1. Model the MOSFET Transistor For a MOSFET transistor, there are NMOS and PMOS. The examples shown here would be for NMOS. Figure

More information

COMMON-SOURCE JFET AMPLIFIER

COMMON-SOURCE JFET AMPLIFIER EXPERIMENT 04 Objectives: Theory: 1. To evaluate the common-source amplifier using the small signal equivalent model. 2. To learn what effects the voltage gain. A self-biased n-channel JFET with an AC

More information

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors. LM 358 Op Amp S k i l l L e v e l : I n t e r m e d i a t e OVERVIEW The LM 358 is a duel single supply operational amplifier. As it is a single supply it eliminates the need for a duel power supply, thus

More information

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics 192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing

More information

Chapter 10 Advanced CMOS Circuits

Chapter 10 Advanced CMOS Circuits Transmission Gates Chapter 10 Advanced CMOS Circuits NMOS Transmission Gate The active pull-up inverter circuit leads one to thinking about alternate uses of NMOS devices. Consider the circuit shown in

More information

Transconductance. (Saturated) MOSFET Small-Signal Model. The small-signal drain current due to v gs is therefore given by

Transconductance. (Saturated) MOSFET Small-Signal Model. The small-signal drain current due to v gs is therefore given by 11 (Saturated) MOSFET Small-Signal Model Transconductance Concept: find an equivalent circuit which interrelates the incremental changes in i D v GS v DS etc. for the MOSFET in saturation The small-signal

More information

Lecture 12: DC Analysis of BJT Circuits.

Lecture 12: DC Analysis of BJT Circuits. Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode

More information

BJT Characteristics and Amplifiers

BJT Characteristics and Amplifiers BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor

More information

Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: Biasing and Small Signal Model Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

More information

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the

More information

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW You need to first identify the physical

More information

Transistors. NPN Bipolar Junction Transistor

Transistors. NPN Bipolar Junction Transistor Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction

More information

The 2N3393 Bipolar Junction Transistor

The 2N3393 Bipolar Junction Transistor The 2N3393 Bipolar Junction Transistor Common-Emitter Amplifier Aaron Prust Abstract The bipolar junction transistor (BJT) is a non-linear electronic device which can be used for amplification and switching.

More information

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER LABORATORY 2 THE DIFFERENTIAL AMPLIFIER OBJECTIVES 1. To understand how to amplify weak (small) signals in the presence of noise. 1. To understand how a differential amplifier rejects noise and common

More information

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.

More information

Transistor Amplifiers

Transistor Amplifiers Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input

More information

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören W04 Transistors and Applications W04 Transistors and Applications ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits (self and condenser) W04 Transistors

More information

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination

More information

AP331A XX G - 7. Lead Free G : Green. Packaging (Note 2)

AP331A XX G - 7. Lead Free G : Green. Packaging (Note 2) Features General Description Wide supply Voltage range: 2.0V to 36V Single or dual supplies: ±1.0V to ±18V Very low supply current drain (0.4mA) independent of supply voltage Low input biasing current:

More information

3.4 - BJT DIFFERENTIAL AMPLIFIERS

3.4 - BJT DIFFERENTIAL AMPLIFIERS BJT Differential Amplifiers (6/4/00) Page 1 3.4 BJT DIFFERENTIAL AMPLIFIERS INTRODUCTION Objective The objective of this presentation is: 1.) Define and characterize the differential amplifier.) Show the

More information

Field Effect Transistors

Field Effect Transistors 506 19 Principles of Electronics Field Effect Transistors 191 Types of Field Effect Transistors 193 Principle and Working of JFET 195 Importance of JFET 197 JFET as an Amplifier 199 Salient Features of

More information

Power Amplifiers. Introduction to Power Amplifiers. Amplifiers. Module 5

Power Amplifiers. Introduction to Power Amplifiers. Amplifiers. Module 5 Module 5 Amplifiers Introduction to What you ll learn in Module 5. Section 5.0 Introduction to. Understand the Operation of. Section 5.1 Power Transistors & Heat Sinks. Power Transistor Construction. Power

More information

Biasing in MOSFET Amplifiers

Biasing in MOSFET Amplifiers Biasing in MOSFET Amplifiers Biasing: Creating the circuit to establish the desired DC oltages and currents for the operation of the amplifier Four common ways:. Biasing by fixing GS. Biasing by fixing

More information

BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back

More information

Figure 1: Common-base amplifier.

Figure 1: Common-base amplifier. The Common-Base Amplifier Basic Circuit Fig. 1 shows the circuit diagram of a single stage common-base amplifier. The object is to solve for the small-signal voltage gain, input resistance, and output

More information

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57] Common-Base Configuration (CB) The CB configuration having a low input and high output impedance and a current gain less than 1, the voltage gain can be quite large, r o in MΩ so that ignored in parallel

More information

Bipolar Transistor Amplifiers

Bipolar Transistor Amplifiers Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must

More information

OBJECTIVE QUESTIONS IN ANALOG ELECTRONICS

OBJECTIVE QUESTIONS IN ANALOG ELECTRONICS 1. The early effect in a bipolar junction transistor is caused by (a) fast turn-on (c) large collector-base reverse bias (b)fast turn-off (d) large emitter-base forward bias 2. MOSFET can be used as a

More information

Zero voltage drop synthetic rectifier

Zero voltage drop synthetic rectifier Zero voltage drop synthetic rectifier Vratislav Michal Brno University of Technology, Dpt of Theoretical and Experimental Electrical Engineering Kolejní 4/2904, 612 00 Brno Czech Republic vratislav.michal@gmail.com,

More information

VI. Transistor amplifiers: Biasing and Small Signal Model

VI. Transistor amplifiers: Biasing and Small Signal Model VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.

More information

LM139/LM239/LM339 A Quad of Independently Functioning Comparators

LM139/LM239/LM339 A Quad of Independently Functioning Comparators LM139/LM239/LM339 A Quad of Independently Functioning Comparators INTRODUCTION The LM139/LM239/LM339 family of devices is a monolithic quad of independently functioning comparators designed to meet the

More information

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs

More information

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level AMPLFERS Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd devices that increase the voltage, current, or power level have at least three terminals with one controlling the flow between

More information

Lecture 250 Measurement and Simulation of Op amps (3/28/10) Page 250-1

Lecture 250 Measurement and Simulation of Op amps (3/28/10) Page 250-1 Lecture 5 Measurement and Simulation of Op amps (/8/) Page 5 LECTURE 5 SIMULATION AND MEASUREMENT OF OP AMPS LECTURE ORGANIZATION Outline Introduction Open Loop Gain CMRR and PSRR A general method of measuring

More information

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II 1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.

More information

Lecture 22: Class C Power Amplifiers

Lecture 22: Class C Power Amplifiers Whites, EE 322 Lecture 22 Page 1 of 13 Lecture 22: lass Power Amplifiers We discovered in Lecture 18 (Section 9.2) that the maximum efficiency of lass A amplifiers is 25% with a resistive load and 50%

More information

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2 Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 I SD = µ pcox( VSG Vtp)^2(1 + VSDλ) 2 From this equation it is evident that I SD is a function

More information

An Introduction to the EKV Model and a Comparison of EKV to BSIM

An Introduction to the EKV Model and a Comparison of EKV to BSIM An Introduction to the EKV Model and a Comparison of EKV to BSIM Stephen C. Terry 2. 3.2005 Integrated Circuits & Systems Laboratory 1 Overview Characterizing MOSFET operating regions EKV model fundamentals

More information

Module 7 : I/O PADs Lecture 33 : I/O PADs

Module 7 : I/O PADs Lecture 33 : I/O PADs Module 7 : I/O PADs Lecture 33 : I/O PADs Objectives In this lecture you will learn the following Introduction Electrostatic Discharge Output Buffer Tri-state Output Circuit Latch-Up Prevention of Latch-Up

More information

Fundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder

Fundamentals of Power Electronics. Robert W. Erickson University of Colorado, Boulder Robert W. Erickson University of Colorado, Boulder 1 1.1. Introduction to power processing 1.2. Some applications of power electronics 1.3. Elements of power electronics Summary of the course 2 1.1 Introduction

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

TS321 Low Power Single Operational Amplifier

TS321 Low Power Single Operational Amplifier SOT-25 Pin Definition: 1. Input + 2. Ground 3. Input - 4. Output 5. Vcc General Description The TS321 brings performance and economy to low power systems. With high unity gain frequency and a guaranteed

More information

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices.

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Outline Here we introduced () basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Circuit Logic Gate A logic gate is an elemantary building block

More information

Application of Rail-to-Rail Operational Amplifiers

Application of Rail-to-Rail Operational Amplifiers Application Report SLOA039A - December 1999 Application of Rail-to-Rail Operational Amplifiers Andreas Hahn Mixed Signal Products ABSTRACT This application report assists design engineers to understand

More information

Common Base BJT Amplifier Common Collector BJT Amplifier

Common Base BJT Amplifier Common Collector BJT Amplifier Common Base BJT Amplifier Common Collector BJT Amplifier Common Collector (Emitter Follower) Configuration Common Base Configuration Small Signal Analysis Design Example Amplifier Input and Output Impedances

More information

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the

More information

*For stability of the feedback loop, the differential gain must vary as

*For stability of the feedback loop, the differential gain must vary as ECE137a Lab project 3 You will first be designing and building an op-amp. The op-amp will then be configured as a narrow-band amplifier for amplification of voice signals in a public address system. Part

More information

LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators

LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mv max for

More information

Amplifier Teaching Aid

Amplifier Teaching Aid Amplifier Teaching Aid Table of Contents Amplifier Teaching Aid...1 Preface...1 Introduction...1 Lesson 1 Semiconductor Review...2 Lesson Plan...2 Worksheet No. 1...7 Experiment No. 1...7 Lesson 2 Bipolar

More information

Fundamentals of Microelectronics

Fundamentals of Microelectronics Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors

More information

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2 Features Functional Schematic High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost 4x4 mm, 20-lead PQFN Package 100% Matte

More information

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment.

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment. Op-Amp Simulation EE/CS 5720/6720 Read Chapter 5 in Johns & Martin before you begin this assignment. This assignment will take you through the simulation and basic characterization of a simple operational

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

LM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION

LM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION LM2576 FEATURES 3.3, 5.0, 12, 15, and Adjustable Output ersions Adjustable ersion Output oltage Range, 1.23 to 37 +/- 4% AG10Maximum Over Line and Load Conditions Guaranteed 3.0A Output Current Wide Input

More information

Field Effect Transistors and Noise

Field Effect Transistors and Noise Physics 3330 Experiment #8 Fall 2005 Field Effect Transistors and Noise Purpose In this experiment we introduce field effect transistors. We will measure the output characteristics of a FET, and then construct

More information

Basic FET Ampli ers 6.0 PREVIEW 6.1 THE MOSFET AMPLIFIER

Basic FET Ampli ers 6.0 PREVIEW 6.1 THE MOSFET AMPLIFIER C H A P T E R 6 Basic FET Ampli ers 6.0 PREVIEW In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits containing these

More information

Lecture-7 Bipolar Junction Transistors (BJT) Part-I Continued

Lecture-7 Bipolar Junction Transistors (BJT) Part-I Continued 1 Lecture-7 ipolar Junction Transistors (JT) Part-I ontinued 1. ommon-emitter (E) onfiguration: Most JT circuits employ the common-emitter configuration shown in Fig.1. This is due mainly to the fact that

More information

3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL

3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL 3 The TTL NAND Gate 3. TTL NAND Gate Circuit Structure The circuit structure is identical to the previous TTL inverter circuit except for the multiple emitter input transistor. This is used to implement

More information

6.101 Final Project Report Class G Audio Amplifier

6.101 Final Project Report Class G Audio Amplifier 6.101 Final Project Report Class G Audio Amplifier Mark Spatz 4/3/2014 1 1 Introduction For my final project, I designed and built a 150 Watt audio amplifier to replace the underpowered and unreliable

More information

An FET Audio Peak Limiter

An FET Audio Peak Limiter 1 An FET Audio Peak Limiter W. Marshall Leach, Jr., Professor Georgia Institute of Technology School of Electrical and Computer Engineering Atlanta, Georgia 30332-0250 USA email: mleach@ee.gatech.edu Copyright

More information

Use and Application of Output Limiting Amplifiers (HFA1115, HFA1130, HFA1135)

Use and Application of Output Limiting Amplifiers (HFA1115, HFA1130, HFA1135) Use and Application of Output Limiting Amplifiers (HFA111, HFA110, HFA11) Application Note November 1996 AN96 Introduction Amplifiers with internal voltage clamps, also known as limiting amplifiers, have

More information

ENEE 307 Electronic Circuit Design Laboratory Spring 2012. A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742

ENEE 307 Electronic Circuit Design Laboratory Spring 2012. A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742 1.1. Differential Amplifiers ENEE 307 Electronic Circuit Design Laboratory Spring 2012 A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742 Differential Amplifiers

More information

Chapter 19 Operational Amplifiers

Chapter 19 Operational Amplifiers Chapter 19 Operational Amplifiers The operational amplifier, or op-amp, is a basic building block of modern electronics. Op-amps date back to the early days of vacuum tubes, but they only became common

More information

BJT Ebers-Moll Model and SPICE MOSFET model

BJT Ebers-Moll Model and SPICE MOSFET model Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll

More information

High Speed, Low Power Monolithic Op Amp AD847

High Speed, Low Power Monolithic Op Amp AD847 a FEATURES Superior Performance High Unity Gain BW: MHz Low Supply Current:.3 ma High Slew Rate: 3 V/ s Excellent Video Specifications.% Differential Gain (NTSC and PAL).9 Differential Phase (NTSC and

More information

Digital to Analog Converter. Raghu Tumati

Digital to Analog Converter. Raghu Tumati Digital to Analog Converter Raghu Tumati May 11, 2006 Contents 1) Introduction............................... 3 2) DAC types................................... 4 3) DAC Presented.............................

More information

PowerAmp Design. PowerAmp Design PAD135 COMPACT HIGH VOLATGE OP AMP

PowerAmp Design. PowerAmp Design PAD135 COMPACT HIGH VOLATGE OP AMP PowerAmp Design COMPACT HIGH VOLTAGE OP AMP Rev G KEY FEATURES LOW COST SMALL SIZE 40mm SQUARE HIGH VOLTAGE 200 VOLTS HIGH OUTPUT CURRENT 10A PEAK 40 WATT DISSIPATION CAPABILITY 200V/µS SLEW RATE APPLICATIONS

More information

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load

More information

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1 CO2005: Electronics I The Field-Effect Transistor (FET) Electronics I, Neamen 3th Ed. 1 MOSFET The metal-oxide-semiconductor field-effect transistor (MOSFET) becomes a practical reality in the 1970s. The

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low

More information

Basic Op Amp Circuits

Basic Op Amp Circuits Basic Op Amp ircuits Manuel Toledo INEL 5205 Instrumentation August 3, 2008 Introduction The operational amplifier (op amp or OA for short) is perhaps the most important building block for the design of

More information

Design of a TL431-Based Controller for a Flyback Converter

Design of a TL431-Based Controller for a Flyback Converter Design of a TL431-Based Controller for a Flyback Converter Dr. John Schönberger Plexim GmbH Technoparkstrasse 1 8005 Zürich 1 Introduction The TL431 is a reference voltage source that is commonly used

More information

Application Note AN-940

Application Note AN-940 Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs...1 2. Grounded Loads...1 3. Totem Pole Switching

More information

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. You will use the MOSFET as a variable resistor and as a switch. BACKGROUND

More information

Bipolar transistor biasing circuits

Bipolar transistor biasing circuits Bipolar transistor biasing circuits This worksheet and all related files are licensed under the Creative Commons Attribution License, version 1.0. To view a copy of this license, visit http://creativecommons.org/licenses/by/1.0/,

More information

Content Map For Career & Technology

Content Map For Career & Technology Content Strand: Applied Academics CT-ET1-1 analysis of electronic A. Fractions and decimals B. Powers of 10 and engineering notation C. Formula based problem solutions D. Powers and roots E. Linear equations

More information

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors).

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors). 1 Lab 03: Differential Amplifiers (BJT) (20 points) NOTE: 1) Please use the basic current mirror from Lab01 for the second part of the lab (Fig. 3). 2) You can use the same chip as the basic current mirror;

More information

Precision Diode Rectifiers

Precision Diode Rectifiers by Kenneth A. Kuhn March 21, 2013 Precision half-wave rectifiers An operational amplifier can be used to linearize a non-linear function such as the transfer function of a semiconductor diode. The classic

More information

The BJT Differential Amplifier. Basic Circuit. DC Solution

The BJT Differential Amplifier. Basic Circuit. DC Solution c Copyright 010. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The BJT Differential Amplifier Basic Circuit Figure 1 shows the circuit

More information

Field-Effect (FET) transistors

Field-Effect (FET) transistors Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,

More information

Operational Amplifier - IC 741

Operational Amplifier - IC 741 Operational Amplifier - IC 741 Tabish December 2005 Aim: To study the working of an 741 operational amplifier by conducting the following experiments: (a) Input bias current measurement (b) Input offset

More information

Laboratory 4: Feedback and Compensation

Laboratory 4: Feedback and Compensation Laboratory 4: Feedback and Compensation To be performed during Week 9 (Oct. 20-24) and Week 10 (Oct. 27-31) Due Week 11 (Nov. 3-7) 1 Pre-Lab This Pre-Lab should be completed before attending your regular

More information

UC3842/UC3843/UC3844/UC3845

UC3842/UC3843/UC3844/UC3845 SMPS Controller www.fairchildsemi.com Features Low Start up Current Maximum Duty Clamp UVLO With Hysteresis Operating Frequency up to 500KHz Description The UC3842/UC3843/UC3844/UC3845 are fixed frequencycurrent-mode

More information

Single Supply Op Amp Circuits Dr. Lynn Fuller

Single Supply Op Amp Circuits Dr. Lynn Fuller ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Single Supply Op Amp Circuits Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 146235604 Tel (585)

More information

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Whites, EE 322 Lecture 24 Page 1 of 10 Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Oscillators are circuits that produce periodic output voltages, such as sinusoids. They accomplish this feat

More information

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential

More information

Regulated D.C. Power Supply

Regulated D.C. Power Supply 442 17 Principles of Electronics Regulated D.C. Power Supply 17.1 Ordinary D.C. Power Supply 17.2 Important Terms 17.3 Regulated Power Supply 17.4 Types of Voltage Regulators 17.5 Zener Diode Voltage Regulator

More information

Inrush Current. Although the concepts stated are universal, this application note was written specifically for Interpoint products.

Inrush Current. Although the concepts stated are universal, this application note was written specifically for Interpoint products. INTERPOINT Although the concepts stated are universal, this application note was written specifically for Interpoint products. In today s applications, high surge currents coming from the dc bus are a

More information

Datasheet. 2A 380KHZ 20V PWM Buck DC/DC Converter. Features

Datasheet. 2A 380KHZ 20V PWM Buck DC/DC Converter. Features General Description Features The is a 380 KHz fixed frequency monolithic step down switch mode regulator with a built in internal Power MOSFET. It achieves 2A continuous output current over a wide input

More information

Design of op amp sine wave oscillators

Design of op amp sine wave oscillators Design of op amp sine wave oscillators By on Mancini Senior Application Specialist, Operational Amplifiers riteria for oscillation The canonical form of a feedback system is shown in Figure, and Equation

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

LM741. Single Operational Amplifier. Features. Description. Internal Block Diagram. www.fairchildsemi.com

LM741. Single Operational Amplifier. Features. Description. Internal Block Diagram. www.fairchildsemi.com Single Operational Amplifier www.fairchildsemi.com Features Short circuit protection Excellent temperature stability Internal frequency compensation High Input voltage range Null of offset Description

More information