Chapter 1 Introduction to The Semiconductor Industry 2005 VLSI TECH. 1

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Transcription:

Chapter 1 Introduction to The Semiconductor Industry 1

The Semiconductor Industry INFRASTRUCTURE Industry Standards (SIA, SEMI, NIST, etc.) Production Tools Utilities Materials & Chemicals Metrology Tools Analytical Laboratories Technical Work Force Colleges & Universities Chip Manufacturer PRODUCT APPLICATIONS Consumers: Computers Automotive Aerospace Medical other industries Customer Service Original Equipment Manufacturers Printed Circuit Board Industry Worldwide sales of microchips : > $250 billion in 2005 SIA: semiconductor industry association 2

From Devices to Integrated Circuits (1947) The First Solid-state Transistor (1958) The First Integrated Circuit (IC) Device - Oscillator IC ( 5 components ) 1950s: Transistor Technology 1960s: Process Technology 1970s: Competition 1980s: Automation 1990s: Volume Production (1961) The First Planar IC (Transistor+R+C) Lucent Technologies, Bell Labs Innovations, William Shockley, John Bardeen, Walter Brattain (1956 Nobel Prize in physics) Texas Instruments, Inc., Jack Kilby Fairchild Semiconductor, California (Silicon Valley), Robert Noyce 3

Top View of Wafer with Chips A single integrated circuit, also known as a die, chip, and microchip 4

Snapshot- Profile of IC 8 metal layers over the past 25 years M6 Cu Via 5 M5 Via 2 Via 1 Contact(W) Via 4 M4 Via 3 M3 M2 M1 Silicon 5

IC Fabrication Silicon Wafer Wafer Sizes Devices and Layers Wafer Fab Stages of IC Fabrication Wafer preparation Wafer fabrication Wafer test/sort Assembly and packaging Final test 6

Evolution of Wafer Size 2000 1992 1975 1981 1987 1965 7

Devices and Layers from a Silicon Chip Top protective layer Conductive layer Metal layer Insulation layers drain Recessed conductive layer Silicon substrate Silicon substrate 8

Stages of IC Fabrication 1. Wafer Preparation includes crystal growing, rounding, slicing and polishing. Single crystal silicon Wafers sliced from ingot 4. Assembly and Packaging: The wafer is cut Scribe line along scribe lines to separate each die. A single die 2. Wafer Fabrication includes cleaning, layering, patterning, etching and doping. Metal connections are made and the chip is encapsulated. Assembly Packaging 3. Test/Sort includes probing, testing and sorting of each die on the wafer. Defective die 5. Final Test ensures IC passes electrical and environmental testing. 9

Preparation of Silicon Wafers 1. Crystal Growth Polysilicon Crucible Seed crystal 6. Edge Rounding Heater 7. Lapping 2. Single Crystal Ingot 8. Wafer Etching 3. Crystal Trimming and Diameter Grind 4. Flat Grinding 9. Polishong Slurry Polishing head Polishing table 5. Wafer Slicing 10. Wafer Inspection 10 (Note: Terms in Figure 1.7 are explained in Chapter 4.)

Wafer Fab Photo courtesy of Advanced Micro Devices-Dresden, S. Doering 11

Career Paths in the Semiconductor Industry Fab Manager Maintenance Manager Production Manager Engineering Manager MS Maintenance Supervisor Production Supervisor Process Engineer BS Equipment Engineer Associate Engineer BSET* Equipment Technician Yield & Failure Analysis Technician AS+ Maintenance Technician Manufacturing Technician Process Technician Lab Technician AS Wafer Fab Technician Production Operator * Bachelor of Science in Electronics Technology HS + HS Education 12

Circuit Integration of Semiconductors - Integration Eras Circuit Integration Semiconductor Industry Time Period Number of Components per Chip No integration (discrete components) Prior to 1960 1 Small scale integration (SSI) Early 1960s 2 to 50 Medium scale integration (MSI) 1960s to Early 1970s 50 to 5,000 Large scale integration (LSI) Early 1970s to Late 1970s 5,000 to 100,000 Very large scale integration (VLSI) Late 1970s to Late 1980s 100,000 to 1,000,000 Ultra large scale integration (ULSI) 1990s to present > 1,000,000 Semiconductor Trends : Increase in Chip Performance Components per Chip Power Consumption Increase in Chip Reliability Reduction in Chip Price 13

Size Comparison of Early and Modern Semiconductors 1990s Microchip (5~25 million transistors) 1960s Transistor U.S. coin, 10 cents 14

15

Past and Future Technology Nodes for Device Critical Dimension (CD) 1988 1992 1995 1997 1999 2001 2002 2005 CD (µm) 1.0 0.5 0.35 0.25 0.18 0.15 0.13 0.10 Common IC Features Line Width Space Contact Hole 16

Feature Technology and Size 12-Inch 8-Inch 0.35 µm technology Wafer 6-Inch When compared to the 0.18-micron process, the new 0.13-micron process results in less than 60 percent the die size and nearly 70 percent improvement in performance The 90-nm process will be manufactured on 300mm wafers NEC devises low-k film for second-generation 65-nm process 0.25 µm technology 0.18 µm technology 0.13 µm technology 0.09 µm technology 0.065 µm technology 17

Die Size Wafer photo Single die Wafer From http://www.amd.com 18

Price Decrease of Semiconductor Chips 10 4 10 2 Electron tubes Standard tube Miniature tube Semiconductor devices Device size = Price = Relative value 1 10-2 10-4 Bipolar transistor Integrated circuits MSI LSI VLSI 1995 : CD=0.35 m increase 150~275 chips per wafer 1997 : CD=0.25 m 2002 : CD=0.13 m 10-6 10-8 1958 : $10 / 1 Transistor 2001 : $10 / 20 million Transistor 10-10 1930 1940 1950 1960 1970 1980 1990 2000 Year 19 ULSI Redrawn from C. Chang & S. Sze, McGraw-Hill, ULSI Technology, (New York: McGraw-Hill, 1996), xxiii.

Reliability Improvement of Chips & Reduction in Chip Power Consumption per IC Long-Term Failure Rate Goals in parts per million (PPM) 700 600 500 400 300 200 100 0 1972 1976 1980 1984 1988 1992 1996 2000 Year Average Power in micro Watts (10-6 W) 10 8 6 4 2 0 1997 1999 2001 2003 2006 2009 2012 Year Redrawn from Semiconductor Industry Association (SIA) National Technology Roadmap, 1997 20

ULSI Chip Intel Corporation, Pentium III Gross world product (GWP) and sales volumes of the electronics, automobile, semiconductor, and steel industries from 1980 to 2000 and projected to 2010. 21

IC Product #1: Semiconductor Memory Devices (a) A schematic diagram of the first nonvolatile semiconductor memory (NVSM) with a floating gate. (b) A limiting case of the floating-gate NVSM the single-electron memory cell. Exponential increase of dynamic random access memory (DRAM) density versus year based on the Semiconductor Industry Association (SIA) roadmap. NVSM : non-volatility; high device density; lowpower consumption; electrical rewritability. 22

100M IC Product #2 : Microprocessor Chips Moore s Law for Microprocessors The number of transistors on a chip double every (12) 18 months. 10M Pentium Pentium Pro 500 Transistors 1M Advanced Micro Devices 80486 25 100K 80286 80386 1.0 10K 4004 8086 8080 Intel Corporation.01 1975 1980 1985 1990 1995 2000 Year Proceedings of the IEEE, January, 1998, 1998 IEEE 23.1

Moore s Law Intel co-founder Gordon Moore notices in 1964 Number of transistors doubled every 12 months Slowed down in the 1980s to every 18 months Amazingly still correct likely to keep until 2010 Gordon Moore Intel Co-Founder and Chairmain Emeritus With Moore s Law, IC products can reach low costs, improve performance, and increase the functions. 24

Start-Up Cost of Wafer Fabs $100,000,000,000 Actual Costs Projected Costs $10,000,000,000 Cost $1,000,000,000 $100,000,000 $10,000,000 1970 1980 1990 2000 2010 2020 Year Used with permission from Proceedings of IEEE, January, 1998 1998 IEEE 25

Productivity Measurements in a Wafer Fab Misprocessing 9 12 6 3 Cycle Time per Operation Photo Production Bay Rework Production Equipment Inspection Scrap Production Equipment Ion Implant Production Bay Inspection Production Equipment Diffusion Production Bay Inspection Time In Time Out Wafer Starts 1 2 3 4 5 6 7 8 9 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 19 19 20 20 21 21 22 22 23 23 24 24 25 25 26 26 27 27 28 28 29 29 30 30 31 31 Production Equipment Inspection Production Equipment Wafer Moves Inspection Production Equipment Inspection Wafer Outs 1 2 3 4 5 6 7 8 9 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 19 19 20 20 21 21 22 22 23 23 24 24 25 25 26 26 27 27 28 28 29 29 30 30 31 31 Etch Production Bay Thin Films Production Bay Metallization Production Bay Production Cycle Time = (Date and Time of Wafer Start) - (Date and Time of Wafer Out) Wafer Outs = Wafer Starts - Wafers Scrapped Operator Efficiency = Theoretical Cycle Time / Actual Cycle Time 26

Equipment Technician in a Wafer Fab 27 Photograph courtesy of Advanced Micro Devices

Technician in Wafer Fab Photo courtesy of Advanced Micro Devices 28